Display device and manufacturing method thereof
    1.
    发明授权
    Display device and manufacturing method thereof 有权
    显示装置及其制造方法

    公开(公告)号:US07880701B2

    公开(公告)日:2011-02-01

    申请号:US11734630

    申请日:2007-04-12

    IPC分类号: G09G3/36

    摘要: A display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines, a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

    摘要翻译: 显示装置包括基板,形成在基板上的第一和第二信号线,连接到第一和第二信号线的第一薄膜晶体管,连接到第一信号线和第二信号线的栅极驱动器和数据驱动器, 并且分别形成在栅极驱动器和数据驱动器中的至少一个中的第二薄膜晶体管。第一薄膜晶体管和第二薄膜晶体管分别包括第一半导体和第二半导体,第一半导体和第二半导体 半导体形成在彼此不同的层。

    Display Device and Manufacturing Method Thereof
    2.
    发明申请
    Display Device and Manufacturing Method Thereof 有权
    显示装置及其制造方法

    公开(公告)号:US20070242176A1

    公开(公告)日:2007-10-18

    申请号:US11734630

    申请日:2007-04-12

    IPC分类号: G02F1/136

    摘要: A display device and a manufacturing method thereof are provided. The display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines., a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

    摘要翻译: 提供了显示装置及其制造方法。 显示装置包括基板,形成在基板上的第一和第二信号线,连接到第一和第二信号线的第一薄膜晶体管,连接到第一信号线和第二信号线的栅极驱动器和数据驱动器 以及形成在栅极驱动器和数据驱动器中的至少一个中的第二薄膜晶体管。第一薄膜晶体管和第二薄膜晶体管分别包括第一半导体和第二半导体,第一半导体和第二半导体 第二半导体形成在彼此不同的层。

    Display apparatus and method of manufacturing thereof
    3.
    发明授权
    Display apparatus and method of manufacturing thereof 有权
    显示装置及其制造方法

    公开(公告)号:US07824952B2

    公开(公告)日:2010-11-02

    申请号:US11689619

    申请日:2007-03-22

    IPC分类号: H01L51/40

    摘要: A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.

    摘要翻译: 诸如有机发光二极管(“OLED”)显示器的显示装置由包括驱动TFT和开关TFT的薄膜晶体管(“TFT”)以及像素电极驱动。 显示装置包括用于开关TFT的非晶硅层和用于驱动TFT的微晶硅或多晶硅层。 非晶硅层和微晶硅层被绝缘层分开。 该设备提供产品可靠性和高图像质量。 制造该装置的方法的特征在于减少处理步骤,并且使用作为适于形成开关TFT或驱动TFT的源电极和漏电极的半色调掩模或狭缝掩模的特殊掩模和半导体层 在光刻过程中。

    Making thin film transistors on display panels
    4.
    发明申请
    Making thin film transistors on display panels 审中-公开
    在显示面板上制作薄膜晶体管

    公开(公告)号:US20080006827A1

    公开(公告)日:2008-01-10

    申请号:US11788501

    申请日:2007-04-20

    IPC分类号: H01L31/036 H01L21/84

    摘要: A thin film transistor for a display device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a polycrystalline semiconductor formed on the gate insulating layer and overlapping the gate electrode, a source electrode partially overlapping the polycrystalline semiconductor, and a drain electrode partially overlapping the polycrystalline semiconductor. The polycrystalline semiconductor includes a plurality of first polycrystalline semiconductors that are doped with conductive impurities and a plurality of second polycrystalline semiconductors that are not doped with conductive impurities, and the first polycrystalline semiconductors are disposed between and connected in series with adjacent ones of the second polycrystalline semiconductors.

    摘要翻译: 一种用于显示装置的薄膜晶体管,包括基板,形成在基板上的栅电极,形成在栅电极上的栅极绝缘层,形成在栅极绝缘层上并与栅电极重叠的多晶半导体,源电极部分重叠 多晶半导体和与多晶半导体部分重叠的漏电极。 多晶半导体包括掺杂有导电杂质的多个第一多晶半导体和不掺杂有导电杂质的多个第二多晶半导体,并且第一多晶半导体布置在相邻的第二多晶半导体之间并与其连接 半导体。

    Organic light-emitting display apparatus and method of manufacturing the same
    7.
    发明授权
    Organic light-emitting display apparatus and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US08669548B2

    公开(公告)日:2014-03-11

    申请号:US13426733

    申请日:2012-03-22

    IPC分类号: H01L29/08 H01L35/24 H01L51/00

    摘要: An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.

    摘要翻译: 一种有机发光显示装置,包括第一绝缘层,第一绝缘层上的第二绝缘层,包括凹凸部,第二绝缘层上的第三绝缘层,第三绝缘层上的像素电极,对置电极 面对像素电极,以及像素电极和对置电极之间的有机发光层; 薄膜晶体管,包括有源层,栅电极和连接到有源层的源极/漏极,所述第一绝缘层位于所述有源层和所述栅电极之间,所述第二绝缘层位于所述栅电极与所述栅电极之间, 源极/漏极; 以及电容器,其包括与栅电极相同的层上的下电极,与第三绝缘层相同的材料的电介质层,以及与像素电极同层的上电极。

    Array test device and array test method for organic light emitting display device and method for manufacturing the organic light emitting display device
    8.
    发明授权
    Array test device and array test method for organic light emitting display device and method for manufacturing the organic light emitting display device 有权
    用于有机发光显示装置的阵列测试装置和阵列测试方法以及用于制造有机发光显示装置的方法

    公开(公告)号:US09236010B2

    公开(公告)日:2016-01-12

    申请号:US13449181

    申请日:2012-04-17

    IPC分类号: G01R31/06 G09G3/32 G09G3/00

    摘要: An array test method of an organic light emitting diode (OLED) display substrate is provided. The OLED display substrate includes a plurality of pixel circuits. Each pixel circuit includes an anode, a first transistor for transmitting a data signal that controls an amount of light emission of an OLED according to a scan signal, a driving transistor for receiving the data signal, generating a driving current corresponding to the data signal, and transmitting the driving current to the OLED, and a second transistor for diode-connecting a gate electrode and a drain electrode of the driving transistor. The array test method includes: injecting electrons or holes that generate an initialization voltage into the anode by turning on the second transistor; radiating electron beams at the anode; and determining whether or not the driving transistor performs normal operation from an amount of secondary electrons emitted from the anode.

    摘要翻译: 提供了一种有机发光二极管(OLED)显示基板的阵列测试方法。 OLED显示基板包括多个像素电路。 每个像素电路包括阳极,用于发送根据扫描信号控制OLED的发光量的数据信号的第一晶体管,用于接收数据信号的驱动晶体管,产生与数据信号相对应的驱动电流, 并向OLED发送驱动电流,以及用于二极管连接驱动晶体管的栅电极和漏电极的第二晶体管。 阵列测试方法包括:通过接通第二晶体管来注入向阳极产生初始化电压的电子或空穴; 在阳极处辐射电子束; 以及从所述阳极发出的二次电子的量确定所述驱动晶体管是否进行正常工作。

    Photo sensor, method of manufacturing photo sensor, and display apparatus
    9.
    发明申请
    Photo sensor, method of manufacturing photo sensor, and display apparatus 审中-公开
    光传感器,光传感器的制造方法以及显示装置

    公开(公告)号:US20120056179A1

    公开(公告)日:2012-03-08

    申请号:US13137442

    申请日:2011-08-16

    IPC分类号: H01L31/036 H01L31/20

    摘要: A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.

    摘要翻译: 光传感器,光传感器的制造方法以及显示装置,所述光传感器包括基板; 在所述基板上的受光单元,所述受光单元包括非晶半导体材料; 第一相邻单元和第二相邻单元,其与所述光接收单元形成为一体,所述第一相邻单元和所述第二相邻单元由所述光接收单元彼此分离; 电连接到第一相邻单元的第一光电传感器电极; 和与第二相邻单元电连接的第二光电传感器电极,其中第一相邻单元和第二相邻单元中的至少一个包括晶体半导体材料。