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    Monlithically coupled waveguide and phototransistor
    2.
    发明授权
    Monlithically coupled waveguide and phototransistor 有权
    单片耦合波导和光电晶体管

    公开(公告)号：US07471855B2

    公开(公告)日：2008-12-30

    申请号：US11180122

    申请日：2005-07-13

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Andreas Bertold Leven ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Andreas Bertold Leven ,  Nils Guenter Weimann

    IPC分类号： G02B6/12

    CPC分类号： G02B6/4204 ,  G02B6/30

    摘要： An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.

    摘要翻译： 光学集成电路包括半导体本体，位于本体上的半导体光波导和位于光学耦合到波导的双极光电晶体管。 在优选实施例中，晶体管的基极区被配置为吸收在波导中传播的辐射，但是发射极和集电极区域均被配置为不吸收传播辐射。 在另一优选实施例中，波导被配置为沿其中的传播轴引导辐射，并且晶体管沿着波导形成细长的占地面积，所述覆盖区沿着传播轴线的方向延伸。 在另一个优选实施例中，沿着传播轴线的距离比垂直于其的方向至少长三倍。

    Wireless transmitters
    4.
    发明申请
    Wireless transmitters 审中-公开
    无线发射机

    公开(公告)号：US20090324250A1

    公开(公告)日：2009-12-31

    申请号：US12317090

    申请日：2008-12-19

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Ting-Chen Hu ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Ting-Chen Hu ,  Nils Guenter Weimann

    IPC分类号： H04B10/04

    CPC分类号： H04B10/00 ,  H04B2210/006

    摘要： A wireless transmitter includes an optical modulator, an optical power splitter, a plurality of electrical drivers, and a plurality of antennas. The optical power splitter has a plurality of optical outputs and has an optical input connected to receive a modulated optical carrier from the optical modulator. Each driver is configured to detect a portion of the modulated optical carrier output by one of the optical outputs of the optical power splitter. Each antenna is connected to be driven by one of the electrical drivers.

    摘要翻译： 无线发射机包括光调制器，光功率分配器，多个电驱动器和多个天线。 光功率分配器具有多个光输出，并具有连接以从光调制器接收调制光载波的光输入。 每个驱动器被配置为检测由光功率分配器的光输出之一输出的调制光载波的一部分。 每个天线被连接以由其中一个电驱动器驱动。

    Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames
    5.
    发明授权
    Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames 有权
    用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法

    公开(公告)号：US07170147B2

    公开(公告)日：2007-01-30

    申请号：US10628748

    申请日：2003-07-28

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    IPC分类号： H00L23/552 ,  G00R21/26 ,  H00B11/02

    CPC分类号： H01L23/544 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/54473 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  Y10S438/953 ,  H01L2924/00

    摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.

    摘要翻译： 具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。 装置还包括覆盖并邻近掺杂半导体的耗散导体。 装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。 该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。 制造装置的方法。

    Transistors and methods for making the same
    6.
    发明授权
    Transistors and methods for making the same 有权
    晶体管及其制作方法

    公开(公告)号：US07190047B2

    公开(公告)日：2007-03-13

    申请号：US10859894

    申请日：2004-06-03

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    IPC分类号： H01L27/082

    CPC分类号： H01L29/66242 ,  H01L29/66318 ,  H01L29/7371

    摘要： Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.

    摘要翻译： 装置包括：掺杂以具有第一电荷载流子极性的第一化合物半导体组合物层; 第二化合物半导体组合物层，被掺杂以具有第二电荷载流子极性并位于第一层上; 第三化合物半导体组合物层，被掺杂以具有第一电荷载流子极性并位于第二层上; 第二层上的基极; 以及插入在基极和第三层之间并且限定基极和第三层之间的电荷载体存取路径距离的间隔环，路径距离在约和之间的范围内。 制造设备的技术。 器件可用作异双极晶体管，特别适用于高频应用。

    Conductive isolation frames for active microelectronic devices, and methods of making such conductive isolation frames
    7.
    发明申请
    Conductive isolation frames for active microelectronic devices, and methods of making such conductive isolation frames 有权
    用于有源微电子器件的导电隔离框架及制造这种导电隔离框架的方法

    公开(公告)号：US20050023708A1

    公开(公告)日：2005-02-03

    申请号：US10628748

    申请日：2003-07-28

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    IPC分类号： H01L23/544 ,  H01L23/552 ,  H01L23/66

    CPC分类号： H01L23/544 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/54473 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  Y10S438/953 ,  H01L2924/00

    摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.

    摘要翻译： 具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。 装置还包括覆盖并邻近掺杂半导体的耗散导体。 装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。 该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。 制造装置的方法。