ELECTRO-OPTICAL DEVICE
    1.
    发明申请

    公开(公告)号:US20250157434A1

    公开(公告)日:2025-05-15

    申请号:US19028333

    申请日:2025-01-17

    Abstract: An electro-optical device is provided and includes a plurality of first signal lines extending in a first direction on a substrate; a plurality of second signal lines extending in a second direction on the substrate, the second direction intersecting the first direction; a pixel area in which a plurality of pixel electrodes are disposed; an outer peripheral edge of the pixel area having a curved portion or a bent portion; and a first circuit block, a second circuit block, and a third circuit block arranged along the outer peripheral edge, wherein the second circuit block is arranged between the first circuit block and the first circuit block, and a first gap between the first circuit bock and the second circuit block is different from a second gap between the second circuit block and the third circuit block.

    Detection device
    2.
    发明授权

    公开(公告)号:US12302683B2

    公开(公告)日:2025-05-13

    申请号:US17890642

    申请日:2022-08-18

    Abstract: A detection device includes a substrate, a plurality of photodiodes provided on the substrate, a plurality of transistors provided correspondingly to the respective photodiodes, a plurality of gate lines that extend in a first direction, a plurality of signal lines that extend in a second direction intersecting the first direction, a plurality of lower electrodes that are provided between the transistors and the photodiodes in a direction orthogonal to the substrate, and are provided correspondingly to the respective photodiodes, an upper electrode provided so as to extend across the photodiodes, and a reflective layer provided between the substrate and each of the photodiodes in the direction orthogonal to the substrate. Each of the lower electrodes has a smaller area than an area defined by the gate lines and the signal lines, and the reflective layer is provided between the lower electrodes adjacent to each other in a plan view.

    Display apparatus
    3.
    发明授权

    公开(公告)号:US12300686B2

    公开(公告)日:2025-05-13

    申请号:US18583418

    申请日:2024-02-21

    Abstract: According to an aspect, a display apparatus includes: a substrate; a plurality of pixels arrayed on the substrate; a plurality of inorganic light-emitting elements that are provided in the pixels, respectively; a transistor provided to a first surface of the substrate and coupled to one of the inorganic light-emitting elements; wiring provided to the first surface of the substrate and coupled to the transistor; and a circular polarization plate provided on a first side of the substrate.

    Display device
    4.
    发明授权

    公开(公告)号:US12298636B2

    公开(公告)日:2025-05-13

    申请号:US18637685

    申请日:2024-04-17

    Abstract: A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.

    DISPLAY DEVICE
    5.
    发明申请

    公开(公告)号:US20250147369A1

    公开(公告)日:2025-05-08

    申请号:US18910103

    申请日:2024-10-09

    Abstract: A display device includes a first pixel including a transistor having an oxide semiconductor layer, a first gate wiring, and a first source wiring. The first gate wiring includes a first part of a first conductive, and extends in a first direction. The first source wiring includes a first part of a second conductive layer and a first part of a third conductive layer connected to the first part of the second conductive layer, and extends in a second direction intersecting the first direction. A thickness of the second conductive layer is thinner than a thickness of the first conductive layer and thinner than a thickness of the third conductive layer.

    DETECTION DEVICE
    6.
    发明申请

    公开(公告)号:US20250146928A1

    公开(公告)日:2025-05-08

    申请号:US19018010

    申请日:2025-01-13

    Abstract: According to an aspect, a detection device includes: a plurality of photodiodes provided on a substrate; a plurality of light emitters arranged so as to face the photodiodes; and a collimating lens that is located between the photodiodes and the light emitters and is configured to emit parallel light toward the photodiodes. At least one of the light emitters is configured to be brought into a lit state and other of the light emitters are configured to be brought into an unlit state. The collimating lens is configured to emit the parallel light at a different emission angle depending on a position of the light emitter in the lit state.

    LIGHTING DEVICE
    7.
    发明申请

    公开(公告)号:US20250146648A1

    公开(公告)日:2025-05-08

    申请号:US18888242

    申请日:2024-09-18

    Abstract: The incident surface is the inner surface of a recess including a bottom surface and an inwardly convex inner side. A tangent line on the free-form curve forms a smaller angle with the optical axis at a point closer to the bottom surface and a larger angle with the optical axis at a point farther from the bottom surface. The free-form curve has a curvature that is not constant. The curvature is maximized at a depth of one-third or less of a depth of the recess. The light enters the bottom surface only at a light distribution angle of three degrees. The light enters the inner side at a light distribution angle of more than three degrees. Light incident on the bottom surface exits through the emitting surface. Light incident on the inner side reflects off the outer side and exits through the emitting surface.

    FILM FORMATION APPARATUS AND FILM FORMATION METHOD OF GALLIUM NITRIDE FILM

    公开(公告)号:US20250146127A1

    公开(公告)日:2025-05-08

    申请号:US19017901

    申请日:2025-01-13

    Inventor: Masanobu IKEDA

    Abstract: A film formation apparatus includes a vacuum chamber, a substrate support portion for supporting a substrate, a target support portion for supporting a target containing nitrogen and gallium, a sputtering gas supply unit for supplying a sputtering gas, a sputtering power source for applying a voltage to the target, a first radical supply source for supplying nitrogen radicals and hydrogen radicals, and a control unit. The control unit controls the sputtering gas supply unit, the sputtering power source, and the first radical supply source so that a first period in which the sputtering gas, the nitrogen radicals, and the hydrogen radicals are supplied to the vacuum chamber and a voltage is applied to the target and a second period in which the nitrogen radicals and the hydrogen radicals are not supplied to the vacuum chamber and a voltage is applied to the target are repeated.

    Method of manufacturing semiconductor device

    公开(公告)号:US12294024B2

    公开(公告)日:2025-05-06

    申请号:US17660729

    申请日:2022-04-26

    Abstract: According to one embodiment, a method of manufacturing a semiconductor device, includes forming a first insulating layer, an oxide semiconductor layer, a second insulating layer, a buffer layer and a metal layer sequentially on a base, forming a patterned resist on the metal layer, etching the buffer layer and the metal layer using the resist as a mask to expose an upper surface of the second insulating layer, reducing a volume of the resist to expose an upper surface along a side surface of the metal layer, etching the metal layer using the resist as a mask, to form a gate electrode and to expose an upper surface of the buffer layer, and carrying out ion implantation on the oxide semiconductor layer using the gate electrode as a mask.

    Liquid crystal display panel
    10.
    发明授权

    公开(公告)号:US12292663B2

    公开(公告)日:2025-05-06

    申请号:US18242660

    申请日:2023-09-06

    Inventor: Gen Koide

    Abstract: According to an aspect, a liquid crystal display panel includes an extending portion. The extending portion is metal wiring provided on the same plane as a plane parallel to a surface of a TFT substrate on which a scan line extends in the X-direction, and is electrically conductive metal extending from the scan line. The extending portion partially overlaps a space, but does not overlap an opening area, in the Z-direction.

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