公开(公告)号：US4571446A

公开(公告)日：1986-02-18

申请号：US614211

申请日：1984-05-25

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L31/042 ,  H01L31/048 ,  H01L31/075 ,  H01L31/04

CPC分类号： H01L31/075 ,  B32B17/10018 ,  B32B17/10137 ,  H01L31/03926 ,  H01L31/0445 ,  H01L31/048 ,  H02S30/10 ,  Y02E10/548

摘要： A photoelectric conversion panel which includes a PIN type non-single-crystal semiconductor laminated photoelectric conversion member formed on a substrate, the substrate is formed by a thin, flexible, chemically reinforced glass sheet.A plurality of such photoelectric conversion panels are arranged side by side by means of a flexible plastic frame reinforced with carbon fibers.

公开(公告)号：US08604481B2

公开(公告)日：2013-12-10

申请号：US13633900

申请日：2012-10-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hidekazu Miyairi ,  Takeyoshi Watabe ,  Takashi Shimazu

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78669 ,  H01L27/1288 ,  H01L29/78678 ,  H01L29/78696 ,  H01L51/52

摘要： A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.

摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，与栅极绝缘层接触的半导体层和与半导体层的一部分接触并形成源极区和漏极区的杂质半导体层。 半导体层包括形成在栅极绝缘层上的微晶半导体层和含有与微晶半导体层接触的氮的微晶半导体区域。 可以以高生产率制造截止电流小且导通电流大的薄膜晶体管。

公开(公告)号：US08518760B2

公开(公告)日：2013-08-27

申请号：US13050117

申请日：2011-03-17

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

IPC分类号： H01L21/84

CPC分类号： H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

摘要： The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

摘要翻译： 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

公开(公告)号：US07355202B2

公开(公告)日：2008-04-08

申请号：US10642305

申请日：2003-08-18

申请人： Hongyong Zhang ,  Shunpei Yamazaki

发明人： Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： H01L31/112

CPC分类号： H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  Y10S148/118

摘要： A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor.

摘要翻译： 公开了一种栅极绝缘薄膜晶体管。 一个改进是薄膜晶体管通过其间的阻挡层形成在衬底上，使得可以防止晶体管被存在于衬底中的诸如碱离子的杂质污染。 此外，将卤素添加到晶体管的阻挡层和栅极绝缘体中的任一个或两者。

公开(公告)号：US09252459B2

公开(公告)日：2016-02-02

申请号：US13719542

申请日：2012-12-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Toru Itakura ,  Kyosuke Ito ,  Rie Yokoi ,  Jun Ishikawa

IPC分类号： H01M10/0569 ,  H01M10/052 ,  H01M10/0568

CPC分类号： H01M10/0569 ,  H01M10/052 ,  H01M10/0568 ,  H01M2300/0045 ,  Y02E60/122

摘要： A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte.

摘要翻译： 本发明的非水电解质包括具有一个以上取代基的第一脂环季铵阳离子的离子液体，具有与第一脂环族季铵阳离子的脂环族骨架相同的脂环族骨架的第二脂环族季铵阳离子， 和第一脂环季铵阳离子和第二脂环族季铵阳离子的抗衡阴离子和碱金属盐。 在第二脂环季铵阳离子中，与脂环族骨架中的氮原子结合的取代基之一是包含卤素元素的取代基。 在离子液体中，包含第二脂环族季铵阳离子的盐的量为每单位离子液体重量的1重量％以下，或小于等于0.8重量％，每单位重量的非水性 电解液