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公开(公告)号:US20240362392A1
公开(公告)日:2024-10-31
申请号:US18769843
申请日:2024-07-11
发明人: Shu-Wei Chung , Tung-Heng Hsieh , Chung-Hui Chen , Chung-Yi Lin
IPC分类号: G06F30/392 , G06F30/323 , G06F30/398 , G06F111/20
CPC分类号: G06F30/392 , G06F30/323 , G06F30/398 , G06F2111/20
摘要: An analog standard cell is provided. An analog standard cell according to the present disclosure includes a first active region and a second active region extending along a first direction, and a plurality of conductive lines in a first metal layer over the first active region and the second active region. The plurality of conductive lines includes a first conductive line and a second conductive line disposed directly over the first active region, a third conductive line and a fourth conductive line disposed directly over the second active region, a middle conductive line disposed between the second conductive line and the third conductive line, a first power line spaced apart from the middle conductive line by the first conductive line and the second conductive line, and a second power line spaced apart from the middle conductive line by the third conductive line and the fourth conductive line.
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公开(公告)号:US20240362387A1
公开(公告)日:2024-10-31
申请号:US18771710
申请日:2024-07-12
发明人: Cheok-Kei LEI , Jerry Chang Jui KAO , Chi-Lin LIU , Hui-Zhong ZHUANG , Zhe-Wei JIANG , Chien-Hsing LI
IPC分类号: G06F30/367 , G06F30/20 , G06F30/392 , G06F30/394 , G06F30/398 , H01L23/522 , H01L27/02
CPC分类号: G06F30/367 , G06F30/20 , G06F30/392 , G06F30/394 , G06F30/398 , H01L23/5223 , H01L27/0207
摘要: A device includes a first conductive line as an input line. The device further includes a second conductive line as an output line, wherein the first conductive line and the second conductive line are in a same level of the integrated circuit. The device further includes a first passive isolation structure between the first conductive line and the second conductive line, wherein the first passive isolation structure and the second conductive line are each positioned at an integer multiple of an interval between the first conductive line and the first passive isolation structure.
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公开(公告)号:US12131108B2
公开(公告)日:2024-10-29
申请号:US18518167
申请日:2023-11-22
发明人: Kenan Yu , Qingwen Deng
IPC分类号: G06F30/3312 , G06F30/327 , G06F30/392 , G06F30/394 , G06F111/20
CPC分类号: G06F30/3312 , G06F30/327 , G06F30/392 , G06F30/394 , G06F2111/20
摘要: A method for providing an IC design is disclosed. The method includes receiving and synthesizing a behavioral description of an IC design; generating, based on the synthesized behavioral description, a layout for the IC design; performing at least a timing analysis on the layout; accessing, based on the timing analysis, a first cell library including a plurality of transistor-based cells, each having one or more transistors and associated with a respective first delay value; accessing, based on the timing analysis, a second cell library including a plurality of non-transistor-based cells, each having no transistor and associated with a respective second delay value; and updating the layout by at least one of inserting one or more of the plurality of transistor-based cells or inserting one or more of the plurality of non-transistor-based cells.
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公开(公告)号:US20240354482A1
公开(公告)日:2024-10-24
申请号:US18751817
申请日:2024-06-24
发明人: Wuhua LI , Yu ZHOU , Haoze LUO , Sheng ZHENG , Sizhan ZHOU , Huibin CHEN
IPC分类号: G06F30/392 , G06F30/323 , G06F111/02
CPC分类号: G06F30/392 , G06F30/323 , G06F2111/02
摘要: In the field of power module technologies, a method and an apparatus for designing a substrate of a power module and a terminal device may be provided. The method includes: obtaining input parameters for designing the substrate of the power module; determining types of basic layout units and a quantity of basic layout units of each type in a circuit topology based on information about the circuit topology and a prestored diagram of a structure of each type of basic layout unit; and connecting, by using a pathfinding model, a connection path of graph elements of each basic layout unit in the circuit topology, to obtain a connection diagram of the substrate of the power module.
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公开(公告)号:US12124785B2
公开(公告)日:2024-10-22
申请号:US18448115
申请日:2023-08-10
发明人: Jia-Hong Gao , Hui-Zhong Zhuang
IPC分类号: G06F30/30 , G06F30/392 , H01L21/04 , H01L27/02
CPC分类号: G06F30/392 , H01L21/041 , H01L27/0207
摘要: A method of manufacturing an integrated circuit (IC) includes forming a first active region in a first cell. The method includes forming a plurality of second active regions in a second cell, wherein the second cell abuts the first cell. The method includes forming a third active region in a third cell, wherein the second cell is between the first cell and the third cell, and a height of the second cell is different from a height of the first cell or the third cell. The method includes forming a plurality of gate structures extending across each of the first active region, the plurality of second active regions, and the third active region. The method includes removing a first portion of a first gate structure at an interface between the first cell and the second cell between the first active region and the plurality of second active regions.
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公开(公告)号:US20240346223A1
公开(公告)日:2024-10-17
申请号:US18756350
申请日:2024-06-27
发明人: Chun-Yen Lin , Bao-Ru Young , Tung-Heng Hsieh
IPC分类号: G06F30/392 , H01L27/088 , H01L29/78
CPC分类号: G06F30/392 , H01L27/0886 , H01L29/7831
摘要: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a fin of semiconductor material protruding outward from an upper surface of a substrate. A doped region is arranged within the fin of semiconductor material and laterally between a first region and a second region of the fin of semiconductor material. A first gate structure is over the first region of the fin of semiconductor material, a second gate structure is over the second region of the fin of semiconductor material, and a third gate structure is over the doped region. Source/drain regions are between the first gate structure, the second gate structure, and the third gate structure.
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7.
公开(公告)号:US20240346222A1
公开(公告)日:2024-10-17
申请号:US18510969
申请日:2023-11-16
发明人: Jiho Han , Jong-Seong Kim , Sungju Jang , Hyuckjoon Kwon , Sunghoon Kim , Raehyun Song
IPC分类号: G06F30/392
CPC分类号: G06F30/392
摘要: Disclosed is an operating method of an electronic device that includes a processor and supports manufacture of a semiconductor device. The operating method includes receiving, at the processor, circuit schematics for the manufacture of the semiconductor device, partitioning, at the processor, circuit components of the circuit schematics into at least two mats, calculating, at the processor, availability of placement and routing of the circuit components, based on limited connecting elements electrically connected to the circuit components, for each of the at least two mats, and performing, at the processor, the placement and routing to generate a layout image for the manufacture of the semiconductor device when the availability indicates that the placement and routing is available. The limited connecting elements include vertical lines, which electrically connect an upper portion and a lower portion of the semiconductor device, at limited locations of the semiconductor device.
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公开(公告)号:US20240339454A1
公开(公告)日:2024-10-10
申请号:US18583125
申请日:2024-02-21
发明人: Hyunchul HWANG , Dae Seong LEE
IPC分类号: H01L27/092 , G06F30/392 , H01L29/06 , H01L29/423 , H01L29/775 , H01L29/786
CPC分类号: H01L27/0922 , G06F30/392 , H01L29/0673 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要: A standard cell includes a plurality of regions, which includes a first region including a first active region extending in a first direction and having a first width, a second region including a second active region extending in the first direction and having a second width greater than the first width, and a first gate electrode extending in a second direction perpendicular to the first direction, and a first transistor corresponding to at least a portion of the first active region and the first gate electrode includes a first channel having the first width, a second transistor corresponding to at least a portion of the second active region and the first gate electrode includes a second channel having the second width, and the first region and the second region contact in the second direction and have the same width with respect to the second direction.
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9.
公开(公告)号:US20240332056A1
公开(公告)日:2024-10-03
申请号:US18739152
申请日:2024-06-10
发明人: Sidlgata V. Sreenivasan , Paras Ajay , Aseem Sayal , Mark McDermott , Shrawan Singhal , Ovadia Abed , Lawrence Dunn , Vipul Goyal , Michael Cullinan
IPC分类号: H01L21/683 , B81C99/00 , G06F30/392 , G06F30/396 , G06F30/398 , G06F117/10 , H01L23/544
CPC分类号: H01L21/6835 , B81C99/002 , G06F30/392 , G06F30/396 , G06F30/398 , H01L21/6838 , H01L23/544 , G06F2117/10 , H01L2221/68309 , H01L2221/68322 , H01L2221/68354 , H01L2221/68368 , H01L2221/68381 , H01L2223/54426 , H01L2223/54473
摘要: A method for assembling heterogeneous components. The assembly process includes using a vacuum based pickup mechanism in conjunction with sub-nm precise moiré alignment techniques resulting in highly accurate, parallel assembly of feedstocks.
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公开(公告)号:US12106032B1
公开(公告)日:2024-10-01
申请号:US17493557
申请日:2021-10-04
IPC分类号: G06F30/398 , G06F30/394 , G06F30/392
CPC分类号: G06F30/398 , G06F30/394 , G06F30/392
摘要: Various embodiments provide for port generation for a circuit design based on layout connectivity information, which can be used as part of an automatic or a semi-automatic process of an electronic design automation (EDA) system. For instance, various embodiments access connectivity information for one or more networks of a circuit design, and use the connectivity information to identify pins of signal networks as positive connections for ports, and geometric shapes on references networks as candidates for negative connections for ports.
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