ACTIVE-MATRIX FIELD EMISSION PIXEL
    2.
    发明申请
    ACTIVE-MATRIX FIELD EMISSION PIXEL 有权
    有源矩阵场发射像素

    公开(公告)号:US20120097958A1

    公开(公告)日:2012-04-26

    申请号:US13244078

    申请日:2011-09-23

    CPC classification number: H01J1/304 G09G3/22 H01J29/04 H01J31/127 H01J2201/319

    Abstract: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

    Abstract translation: 场发射像素包括其上形成有发射电子的场致发射体的阴极,形成从场致发射体吸收电子的荧光体的阳极以及响应于电流源的源极的薄膜晶体管(TFT) 扫描信号,接收数据信号的栅极和连接到场发射器的漏极。 场发射体由诸如金刚石,类金刚石碳,碳纳米管或碳​​纳米纤维的碳材料制成。 阴极可以包括多个场发射器,并且TFT可以包括多个晶体管,其具有施加相同信号的栅极,施加相同信号的源极以及分别连接到场发射极的漏极。 TFT的有源层由诸如非晶硅,微晶硅,多晶硅,宽带隙材料如ZnO的半导体膜或有机半导体制成。

    Active-Matrix Field Emission Display
    3.
    发明申请
    Active-Matrix Field Emission Display 审中-公开
    有源矩阵场发射显示

    公开(公告)号:US20080252196A1

    公开(公告)日:2008-10-16

    申请号:US12093293

    申请日:2006-06-28

    Abstract: Provided is a field emission display (FED) in which field emission devices are applied to a flat panel display. The FED includes: a cathode plate including a substrate, first and second thin film transistors (TFTs) that are serially connected on the substrate, a field emitter disposed on a drain electrode of the second TFT, a gate insulating layer having a gate hole surrounding the field emitter, and field emission gate electrodes disposed on the gate insulating layer; and an anode plate including a substrate, and red, green, and blue phosphors disposed on the substrate, wherein the cathode plate and the anode plate are vacuum-packaged parallel and opposite to each other. According to the present invention, uniformity of the FED panel can be significantly improved, and an inherent source-drain leakage current of the TFT can be significantly reduced, so that a contrast ratio of the FED can be significantly enhanced.

    Abstract translation: 提供了一种场致发射显示器(FED),其中场发射装置被应用于平板显示器。 FED包括:阴极板,包括基板,串联连接在基板上的第一和第二薄膜晶体管(TFT),设置在第二TFT的漏电极上的场致发射体,栅极绝缘层,具有围绕 所述场致发射体和设置在所述栅极绝缘层上的场致发射栅电极; 以及包括基板的阳极板和设置在基板上的红色,绿色和蓝色荧光体,其中阴极板和阳极板被彼此平行并相对地真空包装。 根据本发明,可以显着提高FED面板的均匀性,并且能够显着地降低TFT的固有源漏漏电流,从而可以显着提高FED的对比度。

    Method For Making an Emissive Cathode
    4.
    发明申请
    Method For Making an Emissive Cathode 失效
    制造发射阴极的方法

    公开(公告)号:US20080194168A1

    公开(公告)日:2008-08-14

    申请号:US11915222

    申请日:2006-05-29

    Abstract: A method for manufacturing a triode type cathode structure including depositing and etching: a cathode layer as cathode conductors; a grid layer as grid conductors; an electrical insulation layer and the grid conductors until reaching a resistive layer to provide cavities; and the cathode conductors to have a perforated structure at the intersection of the cathode conductors and grid conductors. Etching the grid conductors and the electrical insulation layer includes: a) depositing a resin layer on the grid layer, b) lithography and development of the resin layer according to a pattern that will form emissive pads, c) etching the grid layer according to the pattern, d) etching the insulation layer subjacent to the grid layer by extending the etching beyond emissive pad patterns, e) etching the grid layer at zones exposed by etching the insulation layer until reaching the resin layer, f) depositing a catalyst layer in openings of the resin layer to form emissive pads at the bottom of the cavities, and g) eliminating the resin layer.

    Abstract translation: 一种制造三极管型阴极结构的方法,包括沉积和蚀刻:阴极层作为阴极导体; 栅格层作为栅格导体; 电绝缘层和栅格导体,直到到达电阻层以提供空腔; 并且阴极导体在阴极导体和栅格导体的交叉处具有穿孔结构。 栅格导体和电绝缘层的蚀刻包括:a)在栅格层上沉积树脂层,b)根据将形成发射焊盘的图案对树脂层进行光刻和显影,c)根据 图案,d)通过将蚀刻延伸超过发光垫图案来蚀刻栅格层以下的绝缘层,e)在通过蚀刻绝缘层暴露的区域蚀刻栅格层直到到达树脂层,f)在开口中沉积催化剂层 的树脂层,以在空腔的底部形成发光垫,并且g)消除树脂层。

    Method and apparatuses for providing uniform electron beams from field emission displays
    5.
    发明授权
    Method and apparatuses for providing uniform electron beams from field emission displays 失效
    用于从场发射显示器提供均匀电子束的方法和装置

    公开(公告)号:US07049753B2

    公开(公告)日:2006-05-23

    申请号:US10219201

    申请日:2002-08-14

    IPC: G09G

    Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

    Abstract translation: 本发明包括场发射器,场致发射显示器(FED),监视器,计算机系统以及采用该系统的方法来从FED装置的阴极提供均匀的电子束。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以诱导来自阴极的场发射的DC偏移电压的电网电压V T和栅极电压,以及叠加在DC偏移电压上的周期性信号,用于在 频率足够快,不能被人眼察觉。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线,其中峰 - 峰电压介于约5伏至约50伏之间。

    Field emission display device
    9.
    发明授权
    Field emission display device 失效
    场致发射显示装置

    公开(公告)号:US06838814B2

    公开(公告)日:2005-01-04

    申请号:US10194682

    申请日:2002-07-12

    Applicant: Ga-Lane Chen

    Inventor: Ga-Lane Chen

    CPC classification number: H01J1/3044 H01J31/127 H01J2201/319 Y10S977/952

    Abstract: A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer, and an anode plate (50) spaced from the electron emitters. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon nitride. The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from niobium. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

    Abstract translation: 场发射显示装置(1)包括阴极板(20),与阴极板接触的电阻缓冲器(30),形成在缓冲器上的多个电子发射器(40)和间隔开的阳极板 从电子发射器。 每个电子发射器包括棒状的第一部分(401)和圆锥形的第二部分(402)。 缓冲器和第一部分由氮化硅制成。 组合缓冲器和第一部件具有电阻率的梯度分布,使得最高电阻率最接近阴极板,最低电阻率最接近阳极板。 第二部分由铌制成。 当在阴极和阳极板之间施加发射电压时,从电子发射器发射的电子穿过空间区域并被阳极板接收。 由于电阻率的梯度分布,只需要非常低的发射电压。

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