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    Method for etching aluminum metal films
    4.
    发明授权
    Method for etching aluminum metal films 失效
    蚀刻铝金属膜的方法

    公开(公告)号：US5827436A

    公开(公告)日：1998-10-27

    申请号：US616964

    申请日：1996-03-15

    申请人： Yukihiro Kamide ,  Yuji Takaoka ,  Yasuaki Yamamichi

    发明人： Yukihiro Kamide ,  Yuji Takaoka ,  Yasuaki Yamamichi

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  C23F1/20 ,  H01L21/00

    CPC分类号： H01L21/32136 ,  C23F4/00

    摘要： A mixed etching gas consisting of boron trichloride, a rare gas, and chlorine is used for etching of an aluminum metal film by dry-etching. In the first step, high frequency power is used to etch and remove alloy grains which tend to form residues and to etch an aluminum metal film in an anisotropic mode. Just before the under-layered silicon film is exposed, the frequency power is lowered but is kept higher than the minimum power required for anisotropic etching to enable etching selectivity with respect to the silicon dioxide film to be achieved.

    摘要翻译： 由三氯化硼，稀有气体和氯组成的混合蚀刻气体用于通过干蚀刻蚀刻铝金属膜。 在第一步中，使用高频功率来蚀刻和去除倾向于形成残余物的合金晶粒，并以各向异性模式蚀刻铝金属膜。 在曝光下层硅膜之前，频率功率降低，但是保持高于各向异性蚀刻所需的最小功率以实现相对于二氧化硅膜的蚀刻选择性。

    Process for etching copper containing metallic film and for forming copper containing metallic wiring
    5.
    发明授权
    Process for etching copper containing metallic film and for forming copper containing metallic wiring 失效
    用于蚀刻含铜金属膜和用于形成含铜金属布线的方法

    公开(公告)号：US5569627A

    公开(公告)日：1996-10-29

    申请号：US506868

    申请日：1995-07-25

    申请人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

    发明人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306

    CPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/32135 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/76885

    摘要： A method for forming a copper wiring in a semiconductor device utilizes a copper film with a pattern mask thereon. Exposed portions of the copper film are etched to form a copper wiring. An insulation film is deposited over the copper wiring, including on side walls thereof. A portion of the insulation film is removed to leave an insulation film substantially only on side walls of the copper which is thinner than before the removing. A first dielectric film is formed between the copper wiring up to a top of the pattern mask but not on top of the pattern mask in order to embed and flatten regions between the copper wiring and pattern mask so that the regions are substantially level with the top of the pattern mask. A second dielectric layer is formed on the first dielectric layer to provide a flat surface over the copper wiring and pattern mask.

    摘要翻译： 在半导体器件中形成铜布线的方法利用其上具有图案掩模的铜膜。 蚀刻铜膜的露出部分以形成铜布线。 绝缘膜沉积在铜布线上，包括在其侧壁上。 绝缘膜的一部分被除去，仅在铜的侧壁上基本上留下绝缘膜，该侧壁比去除之前薄。 第一电介质膜形成在铜线之间，直到图案掩模的顶部，但不在图案掩模的顶部，以便在铜布线和图案掩模之间嵌入和平坦化区域，使得区域与顶部基本平齐 的图案面具。 在第一电介质层上形成第二电介质层，以在铜布线和图案掩模上提供平坦的表面。

    Dry etching method
    6.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5221430A

    公开(公告)日：1993-06-22

    申请号：US860074

    申请日：1992-03-30

    申请人： Shingo Kadomura ,  Yukihiro Kamide

    发明人： Shingo Kadomura ,  Yukihiro Kamide

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/32136

    摘要： Proposed is a method for improving resist selectivity in dry etching of an aluminum-based material layer. A mixed gas containing a chlorine-based gas and hydrogen iodide (HI) is used as an etching gas. The chlorine-based gas furnishes Cl* as a main etchant for the Al-based material layer, while HI furnishes H*. For anisotropic etching of the Al-based material layer, decomposition products of a resist mask are used as a sidewall protection film. It has been known that deposition of the sidewall protection film is promoted when hydrogen atoms are contained in the sidewall protection film. HI is used in the present invention as a supply source for H* because the interatomic bond energy of its H--I bond is low as compared to that of H.sub.2, HCl or HBr so that HI is superior to the H* yielding efficiency under discharge dissociation conditions. In this manner, the bias power necessary for anisotropic etching may be reduced to inhibit sputtering out of the resist mask. Among practically useful etching gases are BCl.sub.3 /Cl.sub.2 /HI and Cl.sub.2 /HI.

    摘要翻译： 提出了一种改善铝基材料层的干法蚀刻中的抗蚀剂选择性的方法。 使用含有氯系气体和碘化氢（HI）的混合气体作为蚀刻气体。 氯基气体提供Cl *作为Al基材料层的主要蚀刻剂，而HI提供H *。 对于Al基材料层的各向异性蚀刻，使用抗蚀剂掩模的分解产物作为侧壁保护膜。 已知当侧壁保护膜中含有氢原子时，促进侧壁保护膜的沉积。 本发明中使用HI作为H *的供给源，因为与H2，HCl或HBr相比，其HI键的原子间键能低，使得HI在放电解离条件下优于H *产生效率 。 以这种方式，可以减少各向异性蚀刻所需的偏置功率，以防止从抗蚀剂掩模中溅射。 实际有用的蚀刻气体是BCl3 / Cl2 / HI和Cl2 / HI。

    Dry etching apparatus and its manufacturing method
    7.
    发明授权
    Dry etching apparatus and its manufacturing method 失效
    干式蚀刻装置及其制造方法

    公开(公告)号：US06350698B1

    公开(公告)日：2002-02-26

    申请号：US09343176

    申请日：1999-06-30

    申请人： Yukihiro Kamide

    发明人： Yukihiro Kamide

    IPC分类号： H01L2100

    CPC分类号： H01L21/67069

    摘要： In a dry etching apparatus, a susceptor cover is attached to a substrate susceptor to shape it into a tapered contour, and no other element is positioned around a wafer support plane to ensure a flatness. A wafer positioning mechanism is provided near the perimeter of the wafer support plane, and it is raised to extend to a level higher than the wafer support plane and used in this status only upon setting or removing the wafer.

    摘要翻译： 在干式蚀刻装置中，将基座盖安装在基板基座上，将其成形为锥形轮廓，并且没有其他元件位于晶片支撑平面周围以确保平坦度。 晶片定位机构设置在晶片支撑平面的周边附近，并且其被升高以延伸到高于晶片支撑平面的水平，并且仅在设置或移除晶片时在该状态下使用。

    Dry etching apparatus for rectangular substrate comprising plasma bar generation means
    8.
    发明授权
    Dry etching apparatus for rectangular substrate comprising plasma bar generation means 失效
    包括等离子体棒产生装置的矩形基板的干蚀刻装置

    公开(公告)号：US5306379A

    公开(公告)日：1994-04-26

    申请号：US937673

    申请日：1992-09-01

    申请人： Yukihiro Kamide

    发明人： Yukihiro Kamide

    IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/3344

    摘要： A rectangular substrate dry etching apparatus which etches a rectangular substrate of a large size with a high degree of accuracy. The dry etching apparatus comprises an etching chamber in which a rectangular substrate to be etched is held in position in the etching chamber, and a plasma generator disposed in the etching chamber for generating a pair of high density plasma bars on the outer sides of and substantially in parallel to a pair of opposing sides of the rectangular substrate in the etching chamber so as to etch the rectangular substrate with diffusion components of the high density plasma bars.

    摘要翻译： 矩形基板干蚀刻装置，以高精度蚀刻大尺寸矩形基板。 干蚀刻装置包括蚀刻室，其中待刻蚀的矩形基板保持在蚀刻室中的适当位置;以及等离子体发生器，其设置在蚀刻室中，用于在外部产生一对高密度等离子体棒，并且基本上 平行于蚀刻室中的矩形基板的一对相对侧，以便用高密度等离子体棒的扩散部分蚀刻矩形基板。

    Formation of aluminum-alloy pattern
    9.
    发明授权
    Formation of aluminum-alloy pattern 失效
    形成铝合金图案

    公开(公告)号：US5741742A

    公开(公告)日：1998-04-21

    申请号：US695526

    申请日：1996-08-12

    申请人： Yukihiro Kamide

    发明人： Yukihiro Kamide

    IPC分类号： H01L21/28 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L21/283 ,  H01L21/31

    CPC分类号： H01L21/32136 ,  H01L21/76888

    摘要： A method of forming an aluminum-alloy pattern at room temperature, which is capable of eliminating the generation of after-corrosion and enhancing the anisotropic processing. In a first step, an etching mask made of a silicon nitride based film is formed on an aluminum-alloy film formed on a barrier metal layer which is formed on a substrate. In a second step, the aluminum-alloy film is dry-etched at room temperature, to form a pattern of the aluminum-alloy film. The etching selection ratio of the aluminum-alloy film to the etching mask is thus improved, and further a sidewall protective film made of aluminum nitride is formed on the etching sidewall, thereby sufficiently performing the anisotropic processing for the aluminum-alloy pattern. In subsequent steps, the barrier metal layer may also be etched and removed at room temperature, and a further sidewall protective film made of aluminum oxide is formed on the etching sidewall as a result of oxygen plasma processing. Any remaining barrier metal layer may be perfectly removed as a final step as a result of over-etching.

    摘要翻译： 一种在室温下形成铝合金图案的方法，其能够消除后腐蚀的产生并增强各向异性处理。 在第一步骤中，在形成在形成在基板上的阻挡金属层上的铝合金膜上形成由氮化硅膜形成的蚀刻掩模。 在第二步骤中，在室温下对铝合金膜进行干式蚀刻，以形成铝合金膜的图案。 因此，铝合金膜与蚀刻掩模的蚀刻选择率得到改善，并且在蚀刻侧壁上形成由氮化铝制成的侧壁保护膜，从而充分地进行铝合金图案的各向异性处理。 在随后的步骤中，也可以在室温下蚀刻去除阻挡金属层，并且由于氧等离子体处理，在蚀刻侧壁上形成另外的氧化铝侧壁保护膜。 作为过度蚀刻的结果，任何剩余的阻挡金属层可以作为最后的步骤被完全去除。