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    Method of manufacturing an electric discharge tube having an electron emitting electrode comprising a cesium-containing layer on a support
    1.
    发明授权
    Method of manufacturing an electric discharge tube having an electron emitting electrode comprising a cesium-containing layer on a support 失效
    制造包含支撑在内的包含层的电子发射电极的放电管的方法

    公开(公告)号：US3811002A

    公开(公告)日：1974-05-14

    申请号：US28008272

    申请日：1972-08-14

    Applicant: PHILIPS CORP

    Inventor： GARBE S ,  ZALM P ,  PASTOOR W

    IPC: H01J40/06 ,  H01J9/02 ,  H01J9/12 ,  H01J9/22

    CPC classification number: H01J9/12 ,  H01J2201/32 ,  H01J2201/34

    Abstract: A method of manufacturing an electric discharge tube having an electron-emitting electrode comprising a support with a cesiumcontaining layer thereon which is activated by reaction of a gaseous compound of an inactive or inert gas and fluorine until a cesium fluoride layer having a composition (CsF, Cs) is formed. The gaseous compound, at the temperatures prevailing in the tube does not react with the surfaces of other parts.

    Abstract translation: 一种制造具有电子发射电极的放电管的方法，该电子发射电极包括其上含有铯的层的载体，其通过惰性或惰性气体和氟的气态化合物的反应而活化，直到具有组成的氟化铯（ CsF，Cs）。 气体化合物在管中的温度下不与其它部分的表面反应。

    Microchannel plate and a method for manufacturing the same
    2.
    发明授权
    Microchannel plate and a method for manufacturing the same 失效
    微通道板及其制造方法

    公开(公告)号：US4780395A

    公开(公告)日：1988-10-25

    申请号：US7087

    申请日：1987-01-27

    Applicant: Tamio Saito ,  Tadashi Sekiguchi

    Inventor： Tamio Saito ,  Tadashi Sekiguchi

    IPC: B44F1/12 ,  C03C17/10 ,  C03C17/40 ,  H01J9/12 ,  H01J43/24 ,  G03C5/00 ,  H01J43/00

    CPC classification number: H01J43/246 ,  C03C17/10 ,  C03C17/40 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/34

    Abstract: A microchannel plate has a platelike photosensitive glass substrate and a plurality of microchannels formed separately from each other and extending across the thickness of the substrate. A secondary electron-emission surface is formed on an inner surface of each of the microchannels. Accelerating electrodes formed on two opposite sides of the photosensitive glass substrate, so as to be partially in electrical contact with the secondary-emission surface. The microchannels are formed by applying ultraviolet rays to the substrate through a mask and removing irradiated portions of the substrate by etching.

    Abstract translation: 微通道板具有平板状光敏玻璃基板和彼此分开形成并延伸穿过基板的厚度的多个微通道。 在每个微通道的内表面上形成二次电子发射表面。 形成在感光性玻璃基板的两侧的加速电极，以与二次发射面部分地电接触。 通过通过掩模将紫外线施加到衬底并通过蚀刻去除衬底的照射部分来形成微通道。

    Method of making a iii-v compound electron-emissive cathode
    3.
    发明授权
    Method of making a iii-v compound electron-emissive cathode 失效
    制备III-V化合物电子发射阴极的方法

    公开(公告)号：US3858955A

    公开(公告)日：1975-01-07

    申请号：US32374673

    申请日：1973-01-15

    Applicant: RCA CORP

    Inventor： SOMMER ALFRED HERMANN

    IPC: H01J9/02 ,  H01J9/12 ,  H01J43/20 ,  H01J9/18

    CPC classification number: H01J9/12 ,  H01J43/20 ,  H01J2201/32 ,  H01J2201/34

    Abstract: A III-V compound cathode is produced by exposing the cathode to cesium or cesium and oxygen, then exposing it to an increasing concentration of cesium while heating to about 150*C. The cathode is maintained at about 150*C, then exposed to a decreasing concentration of cesium while cooling. Also disclosed is an electron-emissive tube containing a cesium buffer source of a material incompletely reacted with cesium. The buffer source provides the increasing and decreasing concentrations of cesium for the above heating step.

    Abstract translation: 通过将阴极暴露于铯或铯和氧，然后在加热至约150℃的同时将其暴露于浓度增加的铯来制备III-V复合阴极。将阴极保持在约150℃，然后暴露于 降低铯浓度降低。

    Method of making an electron emitter device
    5.
    发明授权
    Method of making an electron emitter device 失效
    制造电子发射器件的方法

    公开(公告)号：US3712700A

    公开(公告)日：1973-01-23

    申请号：US3712700D

    申请日：1971-01-18

    Applicant: RCA CORP

    Inventor： SOMMER A

    IPC: H01J9/12 ,  H01J9/18

    CPC classification number: H01J9/12 ,  H01J2201/32 ,  H01J2201/34

    Abstract: A method comprising coating an uncontaminated emitter surface of an emitter body with a non-contaminating protective layer and then mounting the body so that the coated surface is in the interior of an envelope. The envelope and body are then heated to a first temperature to drive contaminant gases from surfaces of the envelope interior while these gases are simultaneously pumped out. The first temperature is low enough that the protective layer remains. Then the body is heated to a second temperature, higher than the first, and the protective layer evaporated off the surface while the envelope is maintained at a temperature below the first temperature. Thereafter the emitter surface is activated by the application thereto of a material which lowers the work function.

    Abstract translation: 一种方法，包括用未污染的保护层涂覆发射体的未受污染的发射器表面，然后安装所述主体，使得涂覆的表面在信封的内部。 然后将外壳和主体加热到第一温度以驱动来自外壳内表面的污染气体，同时将这些气体抽出。 第一个温度足够低以致保护层残留。 然后将身体加热到高于第一温度的第二温度，并且保护层从表面蒸发掉，同时将外壳保持在低于第一温度的温度。 此后，发射体表面通过施加到其上降低功函数的材料而被激活。

    Method of sensitizing electron emissive surfaces of antimony base layers with alkali metal vapors
    7.
    发明授权
    Method of sensitizing electron emissive surfaces of antimony base layers with alkali metal vapors 失效
    用碱金属蒸气对锑基层的电子发射表面进行敏化的方法

    公开(公告)号：US4002735A

    公开(公告)日：1977-01-11

    申请号：US583746

    申请日：1975-06-04

    Applicant: Arthur Frederick McDonie ,  Charles Michael Tomasetti

    Inventor： Arthur Frederick McDonie ,  Charles Michael Tomasetti

    IPC: H01J9/12 ,  H01J40/16 ,  H01J43/18 ,  H01J9/22 ,  B05D5/12

    CPC classification number: H01J40/16 ,  H01J43/18 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/34

    Abstract: In a photomultiplier tube, antimony layers of a photocathode and a plurality of dynodes are simultaneously sensitized by exposure to the vapors of sodium and potassium at an initial temperature of less than about 120.degree. C. The temperature of exposure is gradually increased at a rate of less than about 10.degree. C. per minute until a final temperature of about 200.degree. C. is reached. Then, the photocathode and dynodes are baked at the final temperature until substantially maximum photosensitivity is achieved. The photocathode and dynodes are thereafter exposed to cesium and may be superficially oxidized until substantially maximum photosensitivity is achieved.

    Abstract translation: 在光电倍增管中，通过在小于约120℃的初始温度下暴露于钠和钾的蒸气同时使光电阴极和多个倍增极的锑层敏化。暴露温度以 小于约10℃/分钟直至达到约200℃的最终温度。 然后，将光电阴极和倍增极在最终温度下烘烤，直到实现最大的光敏性。 光电阴极和倍增极随后暴露于铯中，并可能被表面氧化，直至实现最大的光敏性。

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