公开(公告)号：US20210380842A1

公开(公告)日：2021-12-09

申请号：US17293236

申请日：2019-05-29

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Soo Wan CHOI ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4≤log(milling energy)

公开(公告)号：US20210269675A1

公开(公告)日：2021-09-02

申请号：US17184620

申请日：2021-02-25

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  In Seol HWANG

IPC: C09G1/02 ,  C09K13/00 ,  C09K13/04

Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition for CMP includes abrasive particles, an oxidizer, and a carbon polishing inhibitor.

公开(公告)号：US20210189178A1

公开(公告)日：2021-06-24

申请号：US17123115

申请日：2020-12-16

Applicant: KCTECH CO., LTD.

Inventor： Gi Joo SHIN ,  Jung Yoon KIM ,  Kwang Soo PARK ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.

公开(公告)号：US20180330956A1

公开(公告)日：2018-11-15

申请号：US15773904

申请日：2016-08-08

Applicant: KCTECH CO., LTD.

Inventor： Kyunam PARK

IPC: H01L21/304 ,  H01L21/306 ,  H01L21/67 ,  H01L21/02

Abstract: Provided are a chemical mechanical polishing apparatus and a control method thereof. The chemical mechanical polishing apparatus includes a plurality of polishing platens provided with a polishing pad on an upper surface thereof, and a polishing platen transferring unit for transferring the plurality of polishing platens to different process positions according to a predetermined process sequence. Here, different processes are performed at different process positions.

公开(公告)号：US10002777B2

公开(公告)日：2018-06-19

申请号：US15363334

申请日：2016-11-29

Applicant: K.C.Tech Co., Ltd.

Inventor： Young Kyu Kweon ,  Joon Ho An ,  Byoung Chaul Son ,  Jin Sung Rho

IPC: H01L21/67 ,  H01L21/673

CPC classification number: H01L21/67023 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67288 ,  H01L21/67326 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

Abstract: Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.