公开(公告)号：US11854987B2

公开(公告)日：2023-12-26

申请号：US17383338

申请日：2021-07-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ming-Han Lee ,  Shin-Yi Yang ,  Shau-Lin Shue

IPC分类号： H01L23/538 ,  H01L23/498 ,  H01L25/10 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00

CPC分类号： H01L23/5386 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5385 ,  H01L24/16 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1431 ,  H01L2924/1434

摘要： Embodiments of the present disclosure provide an integrated circuit die with vertical interconnect features to enable direct connection between vertically stacked integrated circuit dies. The vertical interconnect features may be formed in a sealing ring, which allows higher routing density than interposers or redistribution layer. The direct connection between vertically stacked integrated circuit dies reduces interposer layers, redistribution process, and bumping processes in multi-die integration, thus, reducing cost of manufacturing.

公开(公告)号：US11800938B2

公开(公告)日：2023-10-31

申请号：US17987765

申请日：2022-11-15

申请人： Wonderland Switzerland AG

发明人： Zhiren Zhong

IPC分类号： A47D1/00 ,  A47D15/00 ,  A47D1/02 ,  B62B9/12 ,  B62B9/10 ,  B62B9/24

CPC分类号： A47D1/006 ,  A47D1/02 ,  A47D15/006 ,  B62B9/102 ,  B62B9/12 ,  B62B9/24 ,  B62B2202/42 ,  B62B2205/30

摘要： A child seat includes a seat portion fixedly connected with a first coupling part, a backrest frame fixedly connected with a second coupling part, the second coupling part being pivotally connected with the first coupling part so that the backrest frame is rotatable relative to the seat portion, a rotary element pivotally connected with the first coupling part, the rotary element being rotatable relative to the seat portion and the backrest frame, and a locking mechanism operatively connected with the backrest frame and operable to rotationally lock and unlock the rotary element with respect to the seat portion. The locking mechanism is configured to switch between a locking state and an unlocking state in response to a rotation of the backrest frame relative to the seat portion and the rotary element.

公开(公告)号：US11789007B2

公开(公告)日：2023-10-17

申请号：US16869417

申请日：2020-05-07

申请人： Zhejiang Orient Gene Biotech Co., Ltd.

发明人： Siyu Lei

IPC分类号： B01L3/00 ,  G01N33/487

CPC分类号： G01N33/48778 ,  B01L3/502 ,  B01L3/523 ,  B01L2200/16 ,  B01L2300/042 ,  B01L2300/0663 ,  B01L2300/0809 ,  B01L2300/0832 ,  B01L2300/0848 ,  B01L2300/123

摘要： The present invention provides a test barrel for placing a test paper card. The test barrel comprises a barrel body and a barrel lid; wherein the barrel body comprises a place reminding board arranged on the barrel body; and the barrel lid comprises an elastic piece arranged on the barrel lid and mating with the place reminding board. The test barrel for placing a test paper card according to the present invention is simple in structure and convenient in operation, and greatly reduces time for test. In addition, a place reminding structure is arranged on the test barrel, which facilitates use of the test barrel for the user and achieves sealing reminding. Further, the test result is accurate, the reusage rate is high, and cleaning is convenient.

公开(公告)号：US11779130B2

公开(公告)日：2023-10-10

申请号：US17386393

申请日：2021-07-27

申请人： Wonderland Switzerland AG

发明人： Zhiren Zhong

IPC分类号： A47D9/00

CPC分类号： A47D9/005

摘要： A child bassinet includes a standing frame, and a top rail portion and a support frame portion respectively connected with the standing frame. The standing frame includes a first leg having two first side segments, and a second leg having two second side segments. The top rail portion includes a first rail respectively connected pivotally with the two first side segments and a second rail respectively connected pivotally with the two second side segments. The support frame portion includes two first bar segments that are respectively connected pivotally with the two first side segments and are fixedly connected with a first coupling part, and two second bar segments that are respectively connected pivotally with the two second side segments and are fixedly connected with a second coupling part, the first and second coupling parts being pivotally connected with each other for forming a central hinge of the support frame portion.

公开(公告)号：US11776895B2

公开(公告)日：2023-10-03

申请号：US17313508

申请日：2021-05-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tung-Jiun Wu

IPC分类号： H01L21/00 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/5222 ,  H01L23/528 ,  H01L23/5226

摘要： A semiconductor structure includes a first dielectric layer, a first metal feature in the first dielectric layer, at least one etch stop layer on the first dielectric layer, a second dielectric layer on the at least one etch stop layer. The semiconductor structure further includes a first barrier sublayer on a sidewall of the second dielectric layer and the at least one etch stop layer, a second barrier sublayer on the first barrier sublayer and the first metal feature, and a second metal feature on the second barrier sublayer.

公开(公告)号：US11754560B2

公开(公告)日：2023-09-12

申请号：US17408844

申请日：2021-08-23

申请人： HEALGEN SCIENTIFIC LIMITED ,  ZHEJIANG ORIENT GENE BIOTECH CO., LTD

发明人： Siyu Lei ,  Jianqiu Fang ,  Lili Shen

IPC分类号： G01N1/00 ,  G01N33/543 ,  G01N33/94

CPC分类号： G01N33/54366 ,  G01N33/946

摘要： The present invention provides an apparatus for detecting an analyte in a fluid sample, comprising a fluid sample collection element, comprising a fluid sample collection element that comprises an absorbing element; a carrier for accommodating a testing element; and a chamber for accommodating a testing element carrier, wherein the testing element carrier is located in the chamber, and the carrier further comprises an extrusion structure that is in contact with the absorbing element and extrudes the absorbing element.

公开(公告)号：US11749643B2

公开(公告)日：2023-09-05

申请号：US17382916

申请日：2021-07-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shin-Yi Yang ,  Ming-Han Lee ,  Shau-Lin Shue

IPC分类号： H01L21/56 ,  H01L25/065 ,  H01L23/00 ,  H01L23/544 ,  H01L23/538 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L25/0655 ,  H01L21/56 ,  H01L23/14 ,  H01L23/31 ,  H01L23/49811 ,  H01L23/5386 ,  H01L23/544 ,  H01L24/14

摘要： Embodiments of the present disclosure provide an integrated circuit die having edge interconnect features. The edge interconnect features may be conductive lines extending through sealing rings and exposed on edge surfaces of the integrated circuit die. The edge interconnect features are configured to connect with other integrated circuit dies without going through an interposer. The semiconductor device may include two or more integrated circuit dies with edge interconnect features and connected through one or more inter-chip connectors formed between the two or more integrated circuit dies. In some embodiments, the inter-chip connectors may be formed by a selective bumping process during packaging.

公开(公告)号：USD997381S1

公开(公告)日：2023-08-29

申请号：US29794345

申请日：2021-06-11

申请人： Zhejiang Orient Gene Biotech Co., Ltd

设计人： Shaohua Fang ,  Gang Li ,  Jianqiu Fang ,  Hongjiang Yu ,  Xuguang Zeng ,  Rong Ma

摘要： FIG. 1 is a top view of a diagnostic testing instrument of our design;
FIG. 2 is a bottom view thereof;
FIG. 3 is a left side view thereof;
FIG. 4 is a right side view thereof;
FIG. 5 is a front view thereof;
FIG. 6 is a rear view thereof;
FIG. 7 is a top front perspective view thereof;
FIG. 8 is a top rear perspective view thereof; and,
FIG. 9 is a bottom rear perspective view thereof.
All broken lines represent portions of the diagnostic testing instrument that form no part of the claimed subject matter.

公开(公告)号：US11735483B2

公开(公告)日：2023-08-22

申请号：US17187283

申请日：2021-02-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yao-Sheng Huang ,  I-Ming Chang ,  Huang-Lin Chao

IPC分类号： H01L21/8238 ,  H01L29/423 ,  H01L21/02 ,  H01L29/161 ,  H01L29/66 ,  H01L29/06 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L27/092

CPC分类号： H01L21/823814 ,  H01L21/0259 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/823807 ,  H01L21/823864 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/161 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

摘要： Embodiments of the present disclosure provide a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. In some embodiments, after forming a first type of source/drain features, a self-aligned mask layer is formed over the first type of source/drain features without using photolithography process, thus, avoid damaging the first type of source/drain features in the patterning process.

公开(公告)号：US11735482B2

公开(公告)日：2023-08-22

申请号：US17833005

申请日：2022-06-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuan-Ting Pan ,  Kuo-Cheng Chiang ,  Shang-Wen Chang ,  Ching-Wei Tsai ,  Kuan-Lun Cheng ,  Chih-Hao Wang

IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L21/768

CPC分类号： H01L21/823468 ,  H01L21/76802 ,  H01L21/823475 ,  H01L27/0886 ,  H01L21/76843 ,  H01L21/76871

摘要： A semiconductor device structure, along with methods of forming such, are described. The structure includes a first and second gate electrode layers, and a dielectric feature disposed between the first and second gate electrode layers. The dielectric feature has a first surface. The structure further includes a first conductive layer disposed on the first gate electrode layer. The first conductive layer has a second surface. The structure further includes a second conductive layer disposed on the second gate electrode layer. The second conductive layer has a third surface, and the first, second, and third surfaces are coplanar. The structure further includes a third conductive layer disposed over the first conductive layer, a fourth conductive layer disposed over the second conductive layer, and a dielectric layer disposed on the first surface of the dielectric feature. The dielectric layer is disposed between the third conductive layer and the fourth conductive layer.