公开(公告)号：US20130068196A1

公开(公告)日：2013-03-21

申请号：US13591650

申请日：2012-08-22

Applicant: Akira FURUYA

Inventor： Akira FURUYA

IPC: F01L1/04 ,  F02D9/00

CPC classification number: F02D9/1065 ,  F02D11/04

Abstract: There is the operation device for an engine. An operation device for an engine performs a throttle operation of the engine which is disposed apart from an operation unit operated by an operator. The operation device includes: a link member rotatable with respect to a base in response to an operation of the operation unit; a cam member fixed to the base, and disposed at a distance from the center of rotation of the link member, the distance changing continuously according to the angular position of the cam member around the center of rotation; a cam follower connected to the link member and configured to along the cam member; and a throttle drive member for connecting the cam follower to a throttle operation unit of the engine.

Abstract translation: 有一个发动机的操作装置。 用于发动机的操作装置执行与操作者操作的操作单元分离的发动机的节气门操作。 操作装置包括：响应于操作单元的操作相对于基座旋转的连杆构件; 固定在所述基座上的凸轮构件，并且设置在所述连杆构件的旋转中心的一定距离处，所述距离根据所述凸轮构件围绕所述旋转中心的角度位置而连续变化; 连接到所述连杆构件并沿着所述凸轮构件配置的凸轮从动件; 以及用于将凸轮从动件连接到发动机的节气门操作单元的节气门驱动构件。

公开(公告)号：US08013257B2

公开(公告)日：2011-09-06

申请号：US12344011

申请日：2008-12-24

Applicant: Akira Furuya ,  Masahiro Miyazaki ,  Hiroshi Take ,  Keisuke Takasugi

Inventor： Akira Furuya ,  Masahiro Miyazaki ,  Hiroshi Take ,  Keisuke Takasugi

IPC: H05K1/16

CPC classification number: H01G4/33 ,  H01G4/224 ,  H01G4/228 ,  H01G4/236

Abstract: The present invention provides an electronic component which is capable of effectively suppressing the characteristic deterioration of the passive element portion. An electronic component comprises a ceramic substrate, a passive element portion on the substrate, an insulator layer which is provided over the passive element portion and comprises a through-hole, a lead terminal which is fitted in the through-hole of the insulator layer and electrically connected to the passive element portion, and an external connection terminal which is electrically connected to the lead terminal. The insulator layer comprises a first face on the side of the passive element portion, a second face on the side opposite the passive element portion, and a third face which connects the first face and the second face and constitutes the peripheral face of the insulator layer, the external connection terminal is in contact with the lead terminal and the second face and the third face of the insulator layer. In a cross-section of the through-hole in a thickness direction of the substrate, a boundary line between the internal surface of the through-hole and the lead terminal is inclined in a direction moving away from a region of the third face with which the external connection terminal is in contact with an end of the boundary line on the side of the first face being taken as a fixed point.

Abstract translation: 本发明提供能够有效地抑制无源元件部的特性劣化的电子部件。 电子部件包括陶瓷基板，基板上的无源元件部分，设置在无源元件部分上方并包括通孔的绝缘体层，安装在绝缘体层的通孔中的引线端子和 电连接到无源元件部分，以及电连接到引线端子的外部连接端子。 绝缘体层包括无源元件部分侧的第一面，与无源元件部分相对的一侧上的第二面以及连接第一面和第二面的第三面，并构成绝缘体层的外周面 外部连接端子与引线端子和绝缘体层的第二面和第三面接触。 在贯通孔的基板的厚度方向的截面中，贯通孔的内表面与引线端子之间的边界线沿着从第三面的区域移开的方向倾斜， 外部连接端子与第一面侧的边界线的端部接触，作为固定点。

公开(公告)号：US07859080B2

公开(公告)日：2010-12-28

申请号：US11606931

申请日：2006-12-01

Applicant: Hajime Kuwajima ,  Akira Furuya ,  Masahiro Miyazaki ,  Makoto Shibata

Inventor： Hajime Kuwajima ,  Akira Furuya ,  Masahiro Miyazaki ,  Makoto Shibata

IPC: H01L27/08

CPC classification number: H03H7/0115 ,  H01G4/33 ,  H01L27/016

Abstract: The invention provides an electronic component which has an improved breakdown limit value of withstand voltage and improved insulation properties and which can be made compact and provided with a multiplicity of layers and a great capacity. The electronic component includes a first conductor having a bottom conductor formed on a substrate and a raised conductor formed to protrude from the bottom conductor, a dielectric film formed on the raised conductor, and a second conductor formed on the dielectric film to constitute a capacitor element in combination with the raised conductor and the dielectric film.

Abstract translation: 本发明提供一种具有改进的耐电压击穿极限值和改善的绝缘性能的电子部件，其可以制成紧凑的并具有多层和大容量。 电子部件包括：第一导体，其具有形成在基板上的底部导体和形成为从底部导体突出的凸起导体，形成在凸起导体上的电介质膜和形成在电介质膜上的第二导体，以构成电容器元件 与凸起的导体和电介质膜组合。

公开(公告)号：US07854824B2

公开(公告)日：2010-12-21

申请号：US12068816

申请日：2008-02-12

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: C25D21/12 ,  C25D17/00

CPC classification number: H01L22/14 ,  C23C4/12 ,  C23C26/00 ,  C25D5/02 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12

Abstract: A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

Abstract translation: 一种制造半导体器件的方法包括测量设​​置有凹部的半导体衬底的表面的反射率，并确定表示对应于所测量的反射率的沉积条件的沉积参数。 然后，在对应于沉积参数的条件下，在半导体衬底上形成金属膜。

公开(公告)号：US07755191B2

公开(公告)日：2010-07-13

申请号：US11723498

申请日：2007-03-20

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L23/522 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A semiconductor device includes a first copper-containing conductive film formed on a substrate, insulating films formed on the first copper-containing conductive film with a concave portion reaching the first copper-containing conductive film, a second barrier insulating film formed to cover the side wall of the concave portion of these insulating films, a second adhesive alloy film made of copper and a dissimilar element other than copper, and coming in contact with the first copper-containing conductive film at the bottom surface of the concave portion and in contact with the second barrier insulating film at the side wall of the concave portion to cover the inside wall of the concave portion, and a second copper-containing conductive film containing copper as a main component, and formed on the second adhesive alloy film in contact with the second adhesive alloy film to fill the concave portion.

Abstract translation: 半导体器件包括：形成在基板上的第一含铜导电膜，形成在第一含铜导电膜上的绝缘膜，具有到达第一含铜导电膜的凹部;第二阻挡绝缘膜，形成为覆盖侧 这些绝缘膜的凹部的壁，由铜构成的第二粘合剂合金膜和铜以外的异种元素，并且与凹部的底面的第一含铜导电膜接触并与 在凹部的侧壁上的第二阻挡绝缘膜覆盖凹部的内壁，以及含有铜作为主要成分的第二含铜导电膜，并形成在与第二粘合合金膜接触的第二粘合合金膜上 第二粘合剂合金膜填充凹部。

公开(公告)号：US07683740B2

公开(公告)日：2010-03-23

申请号：US11878452

申请日：2007-07-24

Applicant: Toshiyuki Yoshizawa ,  Masahiro Miyazaki ,  Akira Furuya ,  Masaomi Ishikura ,  Hajime Kuwajima

Inventor： Toshiyuki Yoshizawa ,  Masahiro Miyazaki ,  Akira Furuya ,  Masaomi Ishikura ,  Hajime Kuwajima

IPC: H03H7/01

CPC classification number: H05K1/162 ,  H01L27/016 ,  H01L28/10 ,  H01L28/40 ,  H05K1/165 ,  H05K3/0023 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0195 ,  H05K2201/09509 ,  H05K2201/1006

Abstract: An electronic component having: a substrate, a lower conductor layer provided on the substrate; an inorganic dielectric film that covers the lower conductor layer; and an upper conductor layer having an upper electrode portion provided on the inorganic dielectric film. The lower conductor layer has a lower electrode portion that together with the upper electrode portion and the inorganic dielectric film constitutes a capacitor, and a coil portion that constitutes an inductor. The entire inorganic dielectric film is formed integrally, and the lower conductor layer is in contact only with the substrate, inorganic dielectric film, and upper conductor layer.

Abstract translation: 一种电子部件，具有：基板，设置在基板上的下导体层; 覆盖下导体层的无机介电膜; 以及具有设置在无机介电膜上的上电极部的上导体层。 下导体层具有与上部电极部分和无机电介质膜一起构成电容器的下部电极部分和构成电感器的线圈部分。 整个无机介电膜一体形成，下导体层仅与基板，无机介电膜和上导体层接触。

公开(公告)号：US07678687B2

公开(公告)日：2010-03-16

申请号：US11496399

申请日：2006-08-01

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: H01L21/4763

CPC classification number: H01L21/31116 ,  H01L21/76831

Abstract: In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45≦MR≦100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound).

Abstract translation: 在制造半导体器件的方法中，多孔膜的绝缘电阻稳定，相邻互连线之间的漏电流提高了信号传播的可靠性。 该方法包括：在半导体衬底上顺序形成多孔膜和图案化抗蚀剂膜; 形成衬底的凹入的暴露表面; 形成覆盖所述凹部的内壁和所述多孔膜的无孔膜; 通过各向异性蚀刻从凹部的底部和非多孔膜选择性地去除无孔膜; 形成覆盖多孔膜和内壁的阻挡金属膜; 并在阻挡金属膜上形成金属膜以填充凹部。 各向异性蚀刻工艺使用混合比为MR，45＆nlE; MR＆nlE; 100的蚀刻气体，其中MR =（（气态“含氮”化合物）+（惰性气体））/（气态“含氟化合物”）。

公开(公告)号：US07667951B2

公开(公告)日：2010-02-23

申请号：US11598073

申请日：2006-11-13

Applicant: Hajime Kuwajima ,  Akira Furuya ,  Masahiro Miyazaki ,  Makoto Shibata

Inventor： Hajime Kuwajima ,  Akira Furuya ,  Masahiro Miyazaki ,  Makoto Shibata

IPC: H01G4/06 ,  H01G4/005

CPC classification number: H01G4/33 ,  H01G4/228 ,  H01G4/40 ,  H01L23/5223 ,  H01L27/016 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an electronic component including a capacitor and provides an electronic component in which electromigration can be prevented and whose capacitor element has an accurate capacity value. The electronic component includes a bottom conductor formed on a substrate, a dielectric film formed to cover the bottom conductor, an organic insulation film formed on the dielectric film, and a top conductor formed in an opening provided in the organic insulation film over the bottom conductor, the top conductor forming a capacitor element in combination with the bottom conductor and the dielectric film.

Abstract translation: 本发明涉及包括电容器的电子部件，并且提供可以防止电迁移并且其电容器元件具有精确的容量值的电子部件。 电子部件包括形成在基板上的底部导体，形成为覆盖底部导体的电介质膜，形成在电介质膜上的有机绝缘膜，以及在底部导体上设置在有机绝缘膜中的开口中形成的顶部导体 ，顶部导体与底部导体和电介质膜组合形成电容器元件。

公开(公告)号：US07652349B2

公开(公告)日：2010-01-26

申请号：US11583074

申请日：2006-10-19

Applicant: Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

Inventor： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC: H01L29/41

CPC classification number: H01L28/40 ,  H01L27/13

Abstract: A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.

Abstract translation: 薄膜器件包括衬底和设置在衬底上的电容器。 电容器包括：下导体层; 电介质膜，其一部分设置在下导体层上; 以及设置在电介质膜上的上导体层。 下导体层具有顶表面，侧表面和由顶表面和侧表面形成的角部。 上导体层包括具有与下导体层的顶表面相对的底表面的上电极部分，介电膜设置在其间。 当从上部导体层的上方观察时，上部​​电极部的底面的周围位于下部导体层的上表面的周围的内侧，而不会接触下部导体层的上表面的周围。

公开(公告)号：US07608881B2

公开(公告)日：2009-10-27

申请号：US11588321

申请日：2006-10-27

Applicant: Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

Inventor： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC: H01L27/108 ,  H01L29/94

CPC classification number: H01L28/40

Abstract: A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 μm inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the flattening film is smaller than that of the top surface of the substrate and equal to or smaller than the thickness of the dielectric film. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.

Abstract translation: 薄膜器件包括：衬底; 由绝缘材料制成并设置在基板上的扁平薄膜; 以及设置在平坦化膜上的电容器。 电容器包括：设置在平坦化膜上的下导体层; 设置在下导体层上的电介质膜; 和设置在电介质膜上的上导体层。 电介质膜的厚度在0.02〜1μm的范围内，小于下导体层的厚度。 平坦化膜的上表面的最大高度的表面粗糙度小于衬底顶表面的表面粗糙度，等于或小于电介质膜的厚度。 下导体层的上表面的最大高度的表面粗糙度等于或小于电介质膜的厚度。