公开(公告)号：US20110212582A1

公开(公告)日：2011-09-01

申请号：US13017361

申请日：2011-01-31

申请人： Ki-ha Hong ,  U-in Chung ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang

发明人： Ki-ha Hong ,  U-in Chung ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang

IPC分类号： H01L21/335

CPC分类号： H01L29/402 ,  H01L29/0891 ,  H01L29/66462 ,  H01L29/7786

摘要： A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.

摘要翻译： 制造高电子迁移率晶体管（HEMT）的方法可以包括在衬底上形成具有不同晶格常数的第一和第二材料层，在第二材料层上形成源极，漏极和栅极，以及改变第二材料层 在栅极和漏极之间形成不同的材料层，或改变第二材料层的厚度，或在第二材料层上形成p型半导体层。 第二材料层的变化可以在栅极和漏极之间的第二材料层的整个区域中发生，或者仅在与栅极相邻的第二材料层的部分区域中发生。 p型半导体层可以形成在栅极和漏极之间的第二材料层的整个顶表面上，或者仅形成在与栅极相邻的顶表面的部分区域上。

公开(公告)号：US07672154B2

公开(公告)日：2010-03-02

申请号：US12073678

申请日：2008-03-07

申请人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

发明人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

IPC分类号： G11C11/00

CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

公开(公告)号：US07548449B2

公开(公告)日：2009-06-16

申请号：US11655192

申请日：2007-01-19

申请人： Tae-Wan Kim ,  In-Jun Hwang ,  Young-Jin Cho ,  Kee-Won Kim

发明人： Tae-Wan Kim ,  In-Jun Hwang ,  Young-Jin Cho ,  Kee-Won Kim

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region. A first example method may include writing data into a MTJ element by polarizing a selected memory region connected to a word line, a first magnetic field at a first end of the MTJ element controlled by a first transistor corresponding to the selected memory region and a second magnetic field at a second end of the MTJ element controlled by a second transistor associated with an adjacent MJT element, the adjacent MJT element connected to the same word line as the MJT element. A second example method may include applying a first current to a first portion of a MTJ element on a first path from a word line to the MTJ element and applying a second current to a second portion of the MTJ element on a second path from the word line to the MTJ element, each of the first and second currents lower than a current threshold, the current threshold being a minimum current for initiating a polarization of the MTJ element, and a sum of the first and second currents at least equal to the current threshold.

摘要翻译： 提供了磁存储器件及其方法。 示例磁存储器件可以包括设置在给定单元单元区域内的晶体管和连接到晶体管的磁隧道结（MTJ）元件，MTJ元件包括MTJ单元，第一和第二焊盘层首先形成磁场， MTJ单元的第二端，晶体管包括连接到给定单元单元区域中的第一焊盘层的漏极和位线，连接到相邻单元区域中的第二焊盘层的源极和连接到 对应于给定单元格区域的字线。 第一示例性方法可以包括通过使连接到字线的所选择的存储器区域偏振来将数据写入MTJ元件中，在由对应于所选择的存储器区域的第一晶体管控制的MTJ元件的第一端处的第一磁场，以及第二 由与相邻MJT元件相关联的第二晶体管控制的MTJ元件的第二端处的磁场，相邻的MJT元件连接到与MJT元件相同的字线。 第二示例性方法可以包括将第一电流施加到从字线到MTJ元件的第一路径上的MTJ元件的第一部分，并且将第二电流施加到来自该字的第二路径上的MTJ元件的第二部分 线路到MTJ元件，第一和第二电流中的每一个低于电流阈值，电流阈值是用于启动MTJ元件的极化的最小电流，以及至少等于电流的第一和第二电流的和 阈。

公开(公告)号：US07477539B2

公开(公告)日：2009-01-13

申请号：US11657646

申请日：2007-01-25

申请人： Kae-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-Jun Hwang

发明人： Kae-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-Jun Hwang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C19/0808

摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.

摘要翻译： 示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。 一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位 阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

公开(公告)号：US07439770B2

公开(公告)日：2008-10-21

申请号：US11654002

申请日：2007-01-17

申请人： Tae-wan Kim ,  Kee-won Kim ,  Hyung-soon Shin ,  Seung-jun Lee ,  In-jun Hwang ,  Young-jin Cho

发明人： Tae-wan Kim ,  Kee-won Kim ,  Hyung-soon Shin ,  Seung-jun Lee ,  In-jun Hwang ,  Young-jin Cho

IPC分类号： H03K19/21

CPC分类号： G11C11/16 ,  H03K19/18 ,  H03K19/21

摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode

摘要翻译： 描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

公开(公告)号：US20080219045A1

公开(公告)日：2008-09-11

申请号：US11976007

申请日：2007-10-19

申请人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

发明人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

IPC分类号： G11C11/00 ,  G11C8/00

CPC分类号： G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  Y10S977/935

摘要： Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.

摘要翻译： 提供了根据多个输入值的逻辑状态的逻辑组合来改变磁感应电流的方向的半导体存储器件和磁电逻辑电路。 半导体存储器件包括电流驱动电路，磁感应层和电阻可变元件。 电流驱动电路根据输入值的逻辑状态的逻辑组合接收多个输入值并改变磁感应电流的方向。 磁感应层引起具有根据磁感应电流的方向变化的方向的磁性。 电阻可变元件具有根据由磁感应层感应的磁性方向而变化的电阻。

公开(公告)号：US07378716B2

公开(公告)日：2008-05-27

申请号：US10987185

申请日：2004-11-15

申请人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

发明人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/135 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.

摘要翻译： 磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。 上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

公开(公告)号：US20070195586A1

公开(公告)日：2007-08-23

申请号：US11655192

申请日：2007-01-19

申请人： Tae-Wan Kim ,  In-Jun Hwang ,  Young-Jin Cho ,  Kee-Won Kim

发明人： Tae-Wan Kim ,  In-Jun Hwang ,  Young-Jin Cho ,  Kee-Won Kim

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region. A first example method may include writing data into a MTJ element by polarizing a selected memory region connected to a word line, a first magnetic field at a first end of the MTJ element controlled by a first transistor corresponding to the selected memory region and a second magnetic field at a second end of the MTJ element controlled by a second transistor associated with an adjacent MJT element, the adjacent MJT element connected to the same word line as the MJT element. A second example method may include applying a first current to a first portion of a MTJ element on a first path from a word line to the MTJ element and applying a second current to a second portion of the MTJ element on a second path from the word line to the MTJ element, each of the first and second currents lower than a current threshold, the current threshold being a minimum current for initiating a polarization of the MTJ element, and a sum of the first and second currents at least equal to the current threshold.

摘要翻译： 提供了磁存储器件及其方法。 示例磁存储器件可以包括设置在给定单元单元区域内的晶体管和连接到晶体管的磁隧道结（MTJ）元件，MTJ元件包括MTJ单元，第一和第二焊盘层首先形成磁场， MTJ单元的第二端，晶体管包括连接到给定单元单元区域中的第一焊盘层的漏极和位线，连接到相邻单元区域中的第二焊盘层的源极和连接到 对应于给定单元格区域的字线。 第一示例性方法可以包括通过使连接到字线的所选择的存储器区域偏振来将数据写入MTJ元件中，在由对应于所选择的存储器区域的第一晶体管控制的MTJ元件的第一端处的第一磁场，以及第二 由与相邻MJT元件相关联的第二晶体管控制的MTJ元件的第二端处的磁场，相邻的MJT元件连接到与MJT元件相同的字线。 第二示例性方法可以包括将第一电流施加到从字线到MTJ元件的第一路径上的MTJ元件的第一部分，并且将第二电流施加到来自该字的第二路径上的MTJ元件的第二部分 线路到MTJ元件，第一和第二电流中的每一个低于电流阈值，电流阈值是用于启动MTJ元件的极化的最小电流，以及至少等于电流的第一和第二电流的和 阈。

公开(公告)号：US20060139992A1

公开(公告)日：2006-06-29

申请号：US11164579

申请日：2005-11-29

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US20060050445A1

公开(公告)日：2006-03-09

申请号：US11193625

申请日：2005-08-01

申请人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

发明人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

摘要翻译： 提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。 多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜 当上下磁性膜具有相反的磁化方向时。