Surface acoustic wave device and fabrication method therefor
    92.
    发明申请
    Surface acoustic wave device and fabrication method therefor 有权
    表面声波装置及其制造方法

    公开(公告)号:US20070075606A1

    公开(公告)日:2007-04-05

    申请号:US11541787

    申请日:2006-10-03

    CPC classification number: H03H3/08 H01L2224/11 H03H9/059

    Abstract: A surface acoustic wave device includes a piezoelectric substrate, a surface acoustic wave element composed of electrodes provided on the piezoelectric substrate and the piezoelectric substrate, a first seal resin portion provided on the piezoelectric substrate and having a cavity on the surface acoustic wave element, and an inorganic insulation film provided in contact with a surface of the piezoelectric substrate to surround the surface acoustic wave element.

    Abstract translation: 表面声波装置包括压电基片,由压电基片上设置的电极和压电基片构成的表面声波元件,设置在压电基片上并在表面声波元件上具有空腔的第一密封树脂部分,以及 设置为与所述压电基板的表面接触以包围所述表面声波元件的无机绝缘膜。

    Display apparatus and manufacturing method thereof
    93.
    发明申请
    Display apparatus and manufacturing method thereof 有权
    显示装置及其制造方法

    公开(公告)号:US20070069211A1

    公开(公告)日:2007-03-29

    申请号:US11526768

    申请日:2006-09-26

    Abstract: According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

    Abstract translation: 根据本发明的一个方面,提供一种显示装置,包括:阵列中形成有TFT的TFT阵列基板;与TFT阵列基板相对配置的对置基板;以及用于将TFT 阵列基板和对置基板彼此相对,其中所述对向基板包括对电极,并且所述TFT阵列基板包括第一导电层,形成在所述第一导电层上的第一绝缘膜,设置成相交的第二导电层 通过第一绝缘膜的第一导电层,形成在第二导电层上并具有至少两层的第二绝缘膜,以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线,以及 密封图案经由第二绝缘膜与第二导电层重叠。

    Organic electroluminescence type display apparatus
    94.
    发明申请
    Organic electroluminescence type display apparatus 审中-公开
    有机电致发光型显示装置

    公开(公告)号:US20060192481A1

    公开(公告)日:2006-08-31

    申请号:US11299906

    申请日:2005-12-13

    CPC classification number: H01L51/5218 H01L27/3244 H01L51/5271 H01L2251/5315

    Abstract: An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.

    Abstract translation: 一种顶发光型有机电致发光型显示装置,其中薄膜晶体管(TFT),由有机树脂制成的平坦化膜和有机EL元件,其中至少阳极,电致发光层和阴极层压在 平坦化膜依次形成在基板上的显示区域中的每个像素中。 阳极由至少两层膜组成,该层包括铝(Al)合金膜,其含有第八组3d的过渡金属作为杂质作为杂质,并且包含层叠在Al合金膜上的透光性导电氧化膜 。

    Material transfer method and manufacturing method for substrate for plasma display
    95.
    发明授权
    Material transfer method and manufacturing method for substrate for plasma display 失效
    用于等离子体显示的衬底的材料转移方法和制造方法

    公开(公告)号:US07018771B2

    公开(公告)日:2006-03-28

    申请号:US11110784

    申请日:2005-04-21

    CPC classification number: H01J9/20 H01J2211/36

    Abstract: The present invention provides a highly reliable technology for manufacturing a substrate with protrusions. After filling an UV-curable transfer material into the grooves of an intaglio plate for transfer, the UV-curable transfer material is cured by irradiating UV rays under the conditions where it is exposed to an atmosphere that contains at least one of oxygen and ozone while a curing-inhibited portion is formed in an area of the UV-curable transfer material exposed to this atmosphere, and the UV-curable transfer material is transferred to the substrate to form the protrusions, while the curing-inhibited portion is made to adhere to the substrate.

    Abstract translation: 本发明提供了用于制造具有突起的基板的高可靠性技术。 在将可UV固化的转印材料填充到用于转印的凹版印刷板的凹槽中之后,通过在暴露于含有氧和臭氧中的至少一种的气氛的条件下照射紫外线来固化可UV固化的转印材料,同时 在暴露于该气氛的紫外线固化型转印材料的区域形成固化抑制部,将紫外线固化性转印材料转印到基板上,形成突起,同时使固化抑制部粘附于 底物。

    Method for manufacturing thin film transistor array
    96.
    发明申请
    Method for manufacturing thin film transistor array 有权
    制造薄膜晶体管阵列的方法

    公开(公告)号:US20050024549A1

    公开(公告)日:2005-02-03

    申请号:US10900607

    申请日:2004-07-28

    Abstract: A manufacturing method of TFT array substrate of an LCD includes step A of forming gate wiring and a gate electrode by subjecting a first metal thin film to a photolithography process; step B of forming semiconductor active film by subjecting a gate insulating film to photolithograhy; step C of forming a source wiring, and source and drain electrodes by subjecting a second metal thin film to a photolithography; step D of forming an interlayer insulating film, thereafter forming a contact hole by subjecting the interlayer insulating film to photolithography; and step E of forming a pixel electrode by subjecting a transparent conductive film to photolithography where the second metal thin film is composed of an alloy containing Mo as a main component. The step B and C are replaced by a step of forming a gate insulating film and a second metal thin film, thereafter forming a TFT by a photolithography.

    Abstract translation: LCD的TFT阵列基板的制造方法包括通过对第一金属薄膜进行光刻工艺来形成栅极布线和栅电极的步骤A; 通过对栅极绝缘膜进行光蚀刻来形成半导体活性膜的步骤B; 通过使第二金属薄膜进行光刻,形成源极布线的步骤C和源极和漏极电极; 步骤D形成层间绝缘膜,然后通过使层间绝缘膜进行光刻而形成接触孔; 以及通过使透明导电膜进行光刻而形成像素电极的步骤E,其中第二金属薄膜由以Mo为主要成分的合金构成。 步骤B和C由形成栅绝缘膜和第二金属薄膜的步骤代替,然后通过光刻形成TFT。

    Method for manufacturing electro-optic element
    97.
    发明授权
    Method for manufacturing electro-optic element 有权
    电光元件制造方法

    公开(公告)号:US06468822B2

    公开(公告)日:2002-10-22

    申请号:US09820939

    申请日:2001-03-30

    CPC classification number: G02F1/13458 G02F1/136286

    Abstract: By using a metal thin film comprising a layer of metal and a layer obtained by adding nitrogen atoms to metal for a metal thin film which becomes a gate electrode and the like, and for a metal thin film which becomes a source electrode and a drain electrode, there is prepared electro-optic elements free from display defects caused by high contact resistance at connected portion of the pixel electrode with the above electrodes even when a low resistance line material is used.

    Abstract translation: 通过使用包含金属层的金属薄膜和通过向成为栅电极等的金属薄膜而向金属添加氮原子而获得的层以及成为源电极和漏电极的金属薄膜 即使在使用低电阻线材的情况下,也制备了没有由像素电极与上述电极的连接部分的高接触电阻引起的显示缺陷的电光元件。

    Production method of electronic component
    100.
    发明授权
    Production method of electronic component 有权
    电子元件的生产方法

    公开(公告)号:US08839502B2

    公开(公告)日:2014-09-23

    申请号:US13565150

    申请日:2012-08-02

    Abstract: A production method of an electronic component includes: forming a sheet having a resin layer and a metal layer formed under the resin layer; bonding the sheet to a substrate so that the metal layer is arranged on a functional portion of an acoustic wave element formed on the substrate, a frame portion surrounding the functional portion is formed between the metal layer and the substrate, a cavity is formed on the functional portion by the metal layer and the frame portion, and the resin layer covers the metal layer and the frame portion.

    Abstract translation: 电子部件的制造方法包括:在树脂层的下面形成具有树脂层和金属层的片材; 将所述片材接合到基板上,使得所述金属层布置在形成在所述基板上的声波元件的功能部分上,在所述金属层和所述基板之间形成围绕所述功能部分的框架部分, 功能部分由金属层和框架部分,树脂层覆盖金属层和框架部分。

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