公开(公告)号：US07978241B2

公开(公告)日：2011-07-12

申请号：US12259359

申请日：2008-10-28

Applicant: Toru Koizumi ,  Akira Okita ,  Masanori Ogura ,  Shin Kikuchi ,  Tetsuya Itano

Inventor： Toru Koizumi ,  Akira Okita ,  Masanori Ogura ,  Shin Kikuchi ,  Tetsuya Itano

IPC: H04N5/335 ,  H04N5/222

CPC classification number: H01L27/14603 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14806 ,  H04N5/3559 ,  H04N9/045

Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Abstract translation: 提供一种可以通过使用与浮动扩散区域分开设置的电容器区域的布局来防止混色的固态图像拾取装置和使用这种装置的相机。 光电二极管区域是包括光电二极管的矩形区域。 电容器区域包括载体保持单元，并且布置在作为具有比一侧更长的一侧的区域的光电二极管区域的矩形的一侧。 在MOS单元区域中，在另一侧设置包括具有比另一侧长的方向的输出单元的输出单元区域，该另一侧与光电二极管区域的矩形的一侧相交。 栅极区域和FD区域布置在光电二极管区域和电容器区域之间。

公开(公告)号：US07948540B2

公开(公告)日：2011-05-24

申请号：US11850266

申请日：2007-09-05

Applicant: Masanori Ogura ,  Toru Koizumi ,  Masaru Fujimura

Inventor： Masanori Ogura ,  Toru Koizumi ,  Masaru Fujimura

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H04N5/378 ,  H04N5/3575 ,  H04N5/374

Abstract: A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.

Abstract translation: 光电转换装置防止由转移开关的寄生电容引起的伪信号被输入到放大器。 光电转换装置（50）包括向信号线（107）输出信号的像素（10），放大经由信号线（107）供给的信号的放大器，以及插入在信号线 信号线（108）和放大器的输入节点。 像素（10）包括光电二极管，浮动扩散（FD），将光电二极管的电荷传送到FD的转移开关，以及根据电位将信号输出到信号线（109）的放大晶体管 的FD。 至少在用于控制像素（10）的转印开关的转印脉冲转移的期间，隔离开关（121）截止。

公开(公告)号：US07943975B2

公开(公告)日：2011-05-17

申请号：US12555854

申请日：2009-09-09

Applicant: Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

Inventor： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC: H01L31/062

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

Abstract: A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

Abstract translation: 固态成像装置包括多个像素，每个像素包括光电转换单元，放大晶体管和复位晶体管。 光电转换单元布置在半导体衬底上的第一导电类型的阱中。 放大晶体管或复位晶体管的源极或漏极区域布置在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间。 在第一像素中，在源极或漏极区域与光电转换单元之间布置有比第一导电类型的阱高的杂质浓度的第一半导体区域，并且布置第一导电类型的第二半导体区域 在第一个半导体区域。

公开(公告)号：US20110069210A1

公开(公告)日：2011-03-24

申请号：US12874119

申请日：2010-09-01

Applicant: Masanori Ogura ,  Toru Koizumi ,  Satoshi Koizumi

Inventor： Masanori Ogura ,  Toru Koizumi ,  Satoshi Koizumi

IPC: H04N9/64

CPC classification number: H04N5/359 ,  H04N9/045 ,  H04N9/646

Abstract: An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction.

Abstract translation: 一种用于校正相邻像素之间的串扰的图像处理装置，包括：存储单元，用于存储用于减少从相邻像素泄漏到对象像素的串扰信号的校正参数，对应于对象位置的校正参数 像素 以及校正单元，用于根据存储在存储单元中的校正参数，相对于像素的位置从固态成像设备的像素信号中减去串扰信号，其中对象像素的数量在 至少两个，并且所述至少两个对象像素在水平方向上具有不同的地址，并且在垂直方向上具有不同的地址。

公开(公告)号：US07838957B2

公开(公告)日：2010-11-23

申请号：US11132242

申请日：2005-05-19

Applicant: Tetsuya Itano ,  Fumihiro Inui ,  Masanori Ogura

Inventor： Tetsuya Itano ,  Fumihiro Inui ,  Masanori Ogura

IPC: H01L31/05

CPC classification number: G03F7/70425 ,  G03F7/70466 ,  H01L27/146

Abstract: A semiconductor device includes a plurality of photoelectric conversion elements arranged in a region. A transfer transistor transfers an electrical charge of the photoelectric conversion elements. An amplifying transistor reads out the electrical charge. A reset transistor resets a gate electrical voltage of the amplifying transistor to a predetermined voltage. A plurality of wiring layers include at least a first wiring layer and a second wiring layer stacked on the first wiring layer. Each wiring layer includes at least one wiring, and is arranged over the region. The wirings of the first and second layers define an aperture of the photoelectric conversion elements.

Abstract translation: 半导体器件包括布置在一个区域中的多个光电转换元件。 传输晶体管传输光电转换元件的电荷。 放大晶体管读出电荷。 复位晶体管将放大晶体管的栅极电压重置为预定电压。 多个布线层至少包括堆叠在第一布线层上的第一布线层和第二布线层。 每个布线层包括至少一个布线，并布置在该区域上。 第一和第二层的布线限定光电转换元件的孔径。

公开(公告)号：US07808537B2

公开(公告)日：2010-10-05

申请号：US11850276

申请日：2007-09-05

Applicant: Masaru Fujimura ,  Masanori Ogura ,  Toru Koizumi

Inventor： Masaru Fujimura ,  Masanori Ogura ,  Toru Koizumi

IPC: H04N3/15 ,  H04N5/335

CPC classification number: H03F3/08 ,  H03F3/45183 ,  H03F3/45475 ,  H03F2200/78 ,  H03F2203/45134 ,  H03F2203/45356 ,  H03F2203/45392 ,  H03F2203/45641 ,  H03F2203/45732 ,  H04N5/3575 ,  H04N5/37213 ,  H04N5/378

Abstract: To provide a configuration including a fully differential amplifier in which decrease in a reading speed can be suppressed. A photoelectric conversion apparatus according to the present invention includes a pixel area where a plurality of pixels are arranged; an amplifier configured to amplify a signal from the pixel area; a plurality of signal paths for transmitting the signals from the pixel area to the amplifier. The amplifier is a fully differential amplifier which includes a plurality of input terminals including a first input terminal and a second input terminal to which the signals from the plurality of signal paths are supplied and a plurality of output terminals including a first output terminal and a second output terminal and the input terminals and the output terminals have no feedback path provided therebetween.

Abstract translation: 提供包括可以抑制读取速度降低的全差分放大器的配置。 根据本发明的光电转换装置包括其中布置多个像素的像素区域; 放大器，被配置为放大来自像素区域的信号; 用于将信号从像素区域发送到放大器的多个信号路径。 该放大器是一个全差分放大器，它包括多个输入端，它们包括一个第一输入端和一个第二输入端，多个信号通路的信号被提供给第一输入端和第二输入端，以及多个输出端，包括第一输出端和第二输出端 输出端子和输入端子和输出端子之间没有设置反馈路径。

公开(公告)号：US20100060762A1

公开(公告)日：2010-03-11

申请号：US12547876

申请日：2009-08-26

Applicant: Hideaki Takada ,  Masanori Ogura ,  Hiroki Hiyama

Inventor： Hideaki Takada ,  Masanori Ogura ,  Hiroki Hiyama

IPC: H04N3/14 ,  H01L27/148

CPC classification number: H04N5/238 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H04N2101/00

Abstract: In a photoelectric conversion apparatus having a plurality of unit cells, wherein each of the unit cells has a photoelectric conversion element, a transfer transistor and a floating diffusion region, a light shielding portion arranged on an upper portion of the floating diffusion region is included. The respective light shielding portions are separated from one another, and are in a floating state without being electrically connected to the floating diffusion region.

Abstract translation: 在具有多个单电池的光电转换装置中，其中每个单电池具有光电转换元件，转移晶体管和浮动扩散区域，包括布置在浮动扩散区域的上部的遮光部分。 各个遮光部分彼此分离，并且处于浮动状态而不与浮动扩散区电连接。

公开(公告)号：US20100020212A1

公开(公告)日：2010-01-28

申请号：US12555854

申请日：2009-09-09

Applicant: Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

Inventor： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC: H04N5/335

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

Abstract: A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

Abstract translation: 固态成像装置包括多个像素，每个像素包括光电转换单元，放大晶体管和复位晶体管。 光电转换单元布置在半导体衬底上的第一导电类型的阱中。 放大晶体管或复位晶体管的源极或漏极区域布置在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间。 在第一像素中，在源极或漏极区域与光电转换单元之间布置有比第一导电类型的阱高的杂质浓度的第一半导体区域，并且布置第一导电类型的第二半导体区域 在第一个半导体区域。

公开(公告)号：US20100002114A1

公开(公告)日：2010-01-07

申请号：US12484310

申请日：2009-06-15

Applicant: Masanori Ogura ,  Toru Koizumi ,  Shin Kikuchi ,  Tatsuya Ryoki

Inventor： Masanori Ogura ,  Toru Koizumi ,  Shin Kikuchi ,  Tatsuya Ryoki

IPC: H04N5/335

CPC classification number: H04N5/378 ,  H04N5/365

Abstract: An image sensing apparatus comprises a transfer block including a first transfer unit and a second transfer unit, wherein the first transfer unit includes a first impedance converter which transfers a first signal to the output unit, and the first transfer unit transfers, as a third signal, a difference signal between a first offset of the first impedance converter and a signal obtained by superimposing the first offset on the first signal, the second transfer unit includes a second impedance converter which transfers a second signal to the output unit, and the second transfer unit transfers, as a fourth signal, a difference signal between a second offset of the second impedance converter and a signal obtained by superimposing the second offset on the second signal, and the output unit calculates a difference between the third signal and the fourth signal, generating and outputting an image signal.

Abstract translation: 一种图像感测装置包括：传输块，包括第一传送单元和第二传送单元，其中第一传送单元包括将第一信号传送到输出单元的第一阻抗转换器，并且第一传送单元作为第三传送单元传送 ，所述第一阻抗变换器的第一偏移与通过将所述第一偏移叠加在所述第一信号上而获得的信号之间的差信号，所述第二传送单元包括将第二信号传送到所述输出单元的第二阻抗变换器， 单元将作为第四信号的第二阻抗变换器的第二偏移与通过将第二偏移叠加在第二信号上而获得的信号之间的差信号进行传输，并且输出单元计算第三信号和第四信号之间的差， 生成和输出图像信号。

公开(公告)号：US07639297B2

公开(公告)日：2009-12-29

申请号：US11198232

申请日：2005-08-08

Applicant: Tomoya Yoneda ,  Shunsuke Inoue ,  Tetsunobu Kochi ,  Hidekazu Takahashi ,  Masanori Ogura

Inventor： Tomoya Yoneda ,  Shunsuke Inoue ,  Tetsunobu Kochi ,  Hidekazu Takahashi ,  Masanori Ogura

IPC: H04N3/14 ,  H04N5/225

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14645 ,  H04N5/3415 ,  H04N9/045 ,  H04N2209/048

Abstract: An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.