公开(公告)号：US5968239A

公开(公告)日：1999-10-19

申请号：US183799

申请日：1998-11-02

Applicant: Naoto Miyashita ,  Masahiro Abe ,  Mariko Shimomura

Inventor： Naoto Miyashita ,  Masahiro Abe ,  Mariko Shimomura

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321 ,  B24B1/00 ,  H01L21/304

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

Abstract: A polishing slurry for use in chemical mechanical polishing is disclosed. The polishing slurry contains a solvent and polishing particles dispersed in this solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The primary particle size of the polishing particles dispersed in the solvent is appropriately 0.01 to 1000 nm. When the polishing particles are colloidally dispersed in the solvent, the secondary particle size of the polishing particles is appropriately 60 to 300 nm.

Abstract translation: 公开了一种用于化学机械抛光的抛光浆料。 抛光浆料含有溶剂和分散在该溶剂中的抛光颗粒。 抛光颗粒选自氮化硅，碳化硅和石墨。 分散在溶剂中的研磨粒子的一次粒径适当为0.01〜1000nm。 当研磨颗粒胶体地分散在溶剂中时，研磨颗粒的二次粒径适当为60〜300nm。

公开(公告)号：US5953693A

公开(公告)日：1999-09-14

申请号：US854093

申请日：1997-05-09

Applicant: Tomoko Sakiyama ,  Eiji Oohira ,  Hirohiko Sagawa ,  Masaru Ohki ,  Kazuhiko Sagara ,  Kiyoshi Inoue ,  Yasunari Obuchi ,  Yuji Toda ,  Masahiro Abe

Inventor： Tomoko Sakiyama ,  Eiji Oohira ,  Hirohiko Sagawa ,  Masaru Ohki ,  Kazuhiko Sagara ,  Kiyoshi Inoue ,  Yasunari Obuchi ,  Yuji Toda ,  Masahiro Abe

IPC: G06F3/00 ,  G06F3/01 ,  G09B21/00 ,  G06F17/28

CPC classification number: G06F3/017 ,  G09B21/009

Abstract: A sign language interpretation apparatus for performing sign language recognition and sign language generation generates easily read sign language computer graphics (CG) animation by preparing sign language word CG patterns on the basis of actual motion of the hand through the use of a glove type sensor to generate natural sign language CG animation, and by applying correction to the sign language word CG patterns. Further, in the sign language interpretation apparatus, results of translation of inputted sign language or voice language are confirmed and modified easily by the individual input persons, whereby results of translation of the inputted sign language or voice language are displayed in a combined form desired by the user to realize smooth communication. Also, candidates obtained as a result of translation are all displayed and can be selected easily by the input person with a device such as a mouse. Further, when a polysemous word is available, the word is displayed while being changed in its display form, and other expressions are confirmed and modified with the mouse.

Abstract translation: 用于执行手语识别和手语生成的手语解释装置通过使用手套型传感器基于手的实际运动来准备手语语言CG图案，从而产生容易读取的手语语言计算机图形（CG）动画 生成自然语言CG动画，并通过对手语CG语法进行修正。 此外，在手语解释装置中，输入的手语或语言语言的翻译结果由个体输入者容易地确认和修改，由此输入的手语或语言语言的翻译结果以所希望的组合形式显示 用户实现平滑沟通。 此外，作为翻译结果获得的候选者都被显示，并且可以由具有诸如鼠标的设备的输入人容易地选择。 此外，当多义词可用时，该单词在其显示形式被改变的同时显示，并且用鼠标确认和修改其他表达。

公开(公告)号：US5861054A

公开(公告)日：1999-01-19

申请号：US747382

申请日：1996-11-12

Applicant: Naoto Miyashita ,  Masahiro Abe ,  Mariko Shimomura

Inventor： Naoto Miyashita ,  Masahiro Abe ,  Mariko Shimomura

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/32 ,  B24B1/00

CPC classification number: C09G1/02 ,  B24B37/04 ,  H01L21/31053 ,  H01L21/32

Abstract: A polishing slurry for use in chemical mechanical polishing is disclosed. The polishing slurry contains a solvent and polishing particles dispersed in this solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The primary particle size of the polishing particles dispersed in the solvent is appropriately 0.01 to 1000 nm. When the polishing particles are colloidally dispersed in the solvent, the secondary particle size of the polishing particles is appropriately 60 to 300 nm.

公开(公告)号：US5786267A

公开(公告)日：1998-07-28

申请号：US456695

申请日：1995-06-01

Applicant: Hiroshi Haraguchi ,  Masahiro Abe ,  Wataru Nomura

Inventor： Hiroshi Haraguchi ,  Masahiro Abe ,  Wataru Nomura

IPC: G03F1/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/44 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975

Abstract: Disclosed is an alignment mark for the X directional alignment of a chip area on a semiconductor wafer, for example. The alignment mark comprises recesses and projections formed on a semiconductor substrate. The recesses or projections are repeatedly arranged in the X direction. The X directional width of the recesses or projections is set smaller than the X directional width of a grain on a metal film formed on the recesses and projections or the average particle size, as viewed from above the semiconductor substrate. The projections may be formed by an insulating layer formed on the semiconductor substrate.

Abstract translation: 例如，公开了用于半导体晶片上的芯片区域的X定向对准的对准标记。 对准标记包括形成在半导体衬底上的凹凸。 凹部或突起沿X方向重复排列。 凹部或突起的X方向宽度设定为小于形成在凹凸上的金属膜上的晶粒的X方向宽度或平均粒径，从半导体衬底的上方观察。 突起可以由形成在半导体衬底上的绝缘层形成。

公开(公告)号：US5659764A

公开(公告)日：1997-08-19

申请号：US200702

申请日：1994-02-23

Applicant: Tomoko Sakiyama ,  Eiji Oohira ,  Hirohiko Sagawa ,  Masaru Ohki ,  Kazuhiko Sagara ,  Kiyoshi Inoue ,  Yasunari Obuchi ,  Yuji Toda ,  Masahiro Abe

Inventor： Tomoko Sakiyama ,  Eiji Oohira ,  Hirohiko Sagawa ,  Masaru Ohki ,  Kazuhiko Sagara ,  Kiyoshi Inoue ,  Yasunari Obuchi ,  Yuji Toda ,  Masahiro Abe

IPC: G06F3/00 ,  G06F3/01 ,  G09B21/00 ,  G06F17/28

CPC classification number: G06F3/017 ,  G09B21/009

Abstract: A sign language interpretation apparatus for performing sign language recognition and sign language generation generates easily read sign language computer graphics (CG) animation by preparing sign language word CG patterns on the basis of actual motion of the hand through the use of a glove type sensor to generate natural sign language CG animation, and by applying correction to the sign language word CG patterns. Further, in the sign language interpretation apparatus, results of translation of inputted sign language or voice language are confirmed and modified easily by the individual input persons, whereby results of translation of the inputted sign language or voice language are displayed in a combined form desired by the user to realize smooth communication. Also, candidates obtained as a result of translation are all displayed and can be selected easily by the input person with a device such as a mouse. Further, when a polysemous word is available, the word is displayed while being changed in its display form, and other expressions are confirmed and modified with the mouse.

Abstract translation: 用于执行手语识别和手语生成的手语解释装置通过使用手套型传感器基于手的实际运动来准备手语语言CG图案，从而产生容易读取的手语语言计算机图形（CG）动画 生成自然语言CG动画，并通过对手语CG语法进行修正。 此外，在手语解释装置中，输入的手语或语言语言的翻译结果由个体输入者容易地确认和修改，由此输入的手语或语言语言的翻译结果以所希望的组合形式显示 用户实现平滑沟通。 此外，作为翻译结果获得的候选者都被显示，并且可以由具有诸如鼠标的设备的输入人容易地选择。 此外，当多义词可用时，该单词在其显示形式被改变的同时显示，并且用鼠标确认和修改其他表达。

公开(公告)号：US5532520A

公开(公告)日：1996-07-02

申请号：US263333

申请日：1994-06-21

Applicant: Hiroshi Haraguchi ,  Masahiro Abe ,  Wataru Nomura

Inventor： Hiroshi Haraguchi ,  Masahiro Abe ,  Wataru Nomura

IPC: G03F1/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/44 ,  H01L23/544 ,  H01L23/58

CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975

Abstract: Disclosed is an alignment mark for the X directional alignment of a chip area on a semiconductor wafer, for example. The alignment mark comprises recesses and projections formed on a semiconductor substrate. The recesses or projections are repeatedly arranged in the X direction. The X directional width of the recesses or projections is set smaller than the X directional width of a grain on a metal film formed on the recesses and projections or the average particle size, as viewed from above the semiconductor substrate. The projections may be formed by a insulating layer formed on the semiconductor substrate.

Abstract translation: 例如，公开了用于半导体晶片上的芯片区域的X定向对准的对准标记。 对准标记包括形成在半导体衬底上的凹凸。 凹部或突起沿X方向重复排列。 凹部或突起的X方向宽度设定为小于形成在凹凸上的金属膜上的晶粒的X方向宽度或平均粒径，从半导体衬底的上方观察。 突起可以由形成在半导体衬底上的绝缘层形成。

公开(公告)号：US5479140A

公开(公告)日：1995-12-26

申请号：US441926

申请日：1995-05-16

Applicant: Masahiro Abe ,  Tsutomu Nanataki ,  Shinsuke Yano

Inventor： Masahiro Abe ,  Tsutomu Nanataki ,  Shinsuke Yano

IPC: C03C14/00 ,  C04B35/462 ,  C04B35/465 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  H01P7/10 ,  H05K1/03 ,  H01P1/20 ,  C04B35/40 ,  H01P7/00

CPC classification number: H01P7/10 ,  C03C14/004 ,  C04B35/462 ,  C04B35/465 ,  C04B35/4682 ,  H01B3/12 ,  H01G4/1272 ,  H05K1/0306

Abstract: A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.multidot.yTiO.sub.2 .multidot.z[(1-a)RE.sub.2 O.sub.3 .multidot.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10 .ltoreq.z.ltoreq.0.25, x+y+z=1 and 0

Abstract translation: 公开了一种介电陶瓷组合物，其基本上由以下组成：包含氧化钡，氧化钛，稀土氧化物和氧化铋作为主要成分的主要陶瓷组合物，该组成由xBaOxyTiO 2 x z [（1-a）RE 2 O 3 xBi 2 O 3]表示，其中RE表示 至少一种稀土金属，0.10≤x≤0.20，0.60，y = 0.75,0.10，z = 0.25，x + y + z = 1，0

公开(公告)号：US5352490A

公开(公告)日：1994-10-04

申请号：US910827

申请日：1992-07-06

Applicant: Masahiro Abe ,  Kazuhisa Okada ,  Shuzo Fukuda

Inventor： Masahiro Abe ,  Kazuhisa Okada ,  Shuzo Fukuda

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C23C16/00

CPC classification number: C23C16/45502 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/545

Abstract: A reaction gas or a gas containing a reaction gas is blown through blowing nozzles onto a steel material in a chemical vapor deposition treating chamber at a velocity sufficient to forcibly remove reacted products from reacted surfaces of a steel material while suppressing irregular thickness of a deposited film.

Abstract translation: 将反应气体或含有反应气体的气体通过喷嘴吹送到化学气相沉积处理室中的钢材上，其速度足以强制地从钢材的反应表面除去反应产物，同时抑制沉积膜的不规则厚度 。

公开(公告)号：US5266526A

公开(公告)日：1993-11-30

申请号：US854812

申请日：1992-03-19

Applicant: Masaharu Aoyama ,  Masahiro Abe

Inventor： Masaharu Aoyama ,  Masahiro Abe

IPC: H01L21/3205 ,  H01L21/288 ,  H01L21/74 ,  H01L21/768 ,  H01L23/52 ,  H01L21/441 ,  H01L21/469

CPC classification number: H01L21/7688 ,  H01L21/743 ,  Y10S148/10

Abstract: A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as a mask a photoresist layer, the trench having substantially an upright step; depositing a first electrode material on the surface of the photoresist layer and on the bottom of the trench, while leaving the photoresist layer; removing the photoresist layer and the first electrode material on the photoresist layer while leaving the first electrode material only on the bottom of the trench; and filling a second electrode material in the trench to form a composite electrode with the second electrode material being superposed on the first electrode material.

Abstract translation: 一种在半导体器件上形成沟槽埋入布线的方法。 该方法包括以下步骤：在形成在半导体衬底上的第一绝缘膜中形成沟槽，通过使用光刻胶层作为掩模，该沟槽具有基本上直立的步骤; 在光致抗蚀剂层的表面上和沟槽的底部上沉积第一电极材料，同时留下光致抗蚀剂层; 在光致抗蚀剂层上除去光致抗蚀剂层和第一电极材料，同时仅在沟槽的底部留下第一电极材料; 以及在沟槽中填充第二电极材料以形成复合电极，其中第二电极材料叠置在第一电极材料上。

公开(公告)号：US5016663A

公开(公告)日：1991-05-21

申请号：US320643

申请日：1988-11-30

Applicant: Yasukazu Mase ,  Masahiro Abe ,  Osamu Hirata

Inventor： Yasukazu Mase ,  Masahiro Abe ,  Osamu Hirata

IPC: H01L21/66 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01L21/67011

Abstract: In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.

Abstract translation: PCT No.PCT / JP88 / 00327 Sec。 371日期：1988年11月30日 102（e）1988年11月30日日期PCT提交1988年3月31日PCT公布。 公开号WO88 / 07757 日本10月6日，1988年。在根据本发明的用于确定半导体制造装置的清洁结束的方法中，当通过使用等离子体放电的干蚀刻来清洁半导体制造装置的半导体衬底处理室的内部时， 在等离子体放电期间从高频电源提供恒定电流或电压以放电电极，监测电极之间的阻抗或处理室中的温度，检测阻抗或温度突然变化的时间点， 并且该检测时间点被确定为清洁的结束。