公开(公告)号：US20130280646A1

公开(公告)日：2013-10-24

申请号：US13920128

申请日：2013-06-18

申请人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Osamu NOZAWA

发明人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Osamu NOZAWA

IPC分类号： G03F1/50 ,  G03F7/20 ,  G03F1/00

CPC分类号： G03F1/50 ,  G03F1/00 ,  G03F1/26 ,  G03F1/58 ,  G03F7/20 ,  G03F7/2041 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31138

摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

公开(公告)号：US08535855B2

公开(公告)日：2013-09-17

申请号：US13109132

申请日：2011-05-17

申请人： Kazuya Sakai ,  Masahiro Hashimoto

发明人： Kazuya Sakai ,  Masahiro Hashimoto

IPC分类号： G03F1/68 ,  B08B7/02

CPC分类号： G03F1/54 ,  C03C17/225 ,  C03C17/23 ,  C03C23/007 ,  C03C2217/281 ,  C03C2217/29 ,  G03F1/50 ,  G03F1/68

摘要： Provided is a method of manufacturing a mask blank having a thin film on a transparent substrate. The method includes forming the thin film made of a material containing a transition metal on the transparent substrate and applying a superheated steam treatment to the thin film.

摘要翻译： 提供了在透明基板上制造具有薄膜的掩模坯料的方法。 该方法包括在透明基板上形成由含有过渡金属的材料制成的薄膜，并对薄膜进行过热蒸汽处理。

公开(公告)号：US20130230795A1

公开(公告)日：2013-09-05

申请号：US13854439

申请日：2013-04-01

申请人： Hiroyuki IWASHITA ,  Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroaki SHISHIDO

发明人： Hiroyuki IWASHITA ,  Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroaki SHISHIDO

IPC分类号： G03F1/50

CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/54

摘要： A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.

摘要翻译： 光掩模坯料用于制造要施加具有200nm或更小的波长的曝光光的光掩模。 光掩模坯料具有形成在其上的透光性基板和遮光膜。 遮光膜具有含有过渡金属和硅的遮光层和在遮光层上连续形成并由含有氧和氮中的至少一种的材料制成的前表面抗反射层。 遮光膜对于曝光光具有预定值以下的正面反射率，并且具有能够将曝光波长处的前表面反射率的变化宽度控制在2％以内的特性，当厚度为 前表面抗反射层在2nm的范围内变化。 选择具有能够实现这种特性的折射率n和消光系数k的前表面抗反射层的材料。

公开(公告)号：US20130122407A1

公开(公告)日：2013-05-16

申请号：US13812627

申请日：2011-07-29

申请人： Masahiro Hashimoto ,  Kazunori Ono ,  Kenta Tsukagoshi ,  Tooru Fukui

发明人： Masahiro Hashimoto ,  Kazunori Ono ,  Kenta Tsukagoshi ,  Tooru Fukui

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  Y10S430/143

摘要： To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.

摘要翻译： 为了解决由于反向散射引起的累积能量的降低的问题，导致当在通常使用的高对比度抗蚀剂用于制造反射掩模时引起的CD线性的降低。 用于制造反射掩模的反射掩模坯料包括基板，形成在基板上并适于反射曝光光的多层反射膜，以及形成在多层反射膜上并适于吸收曝光光的吸收膜。 在吸收膜上形成用于电子束写入的抗蚀剂膜，并且用于电子束写入的抗蚀剂膜的对比度值γ为30以下。

公开(公告)号：US20130105441A1

公开(公告)日：2013-05-02

申请号：US13641220

申请日：2011-04-04

申请人： Osamu Nozawa ,  Masahiro Hashimoto

发明人： Osamu Nozawa ,  Masahiro Hashimoto

IPC分类号： B44C1/22

CPC分类号： G11B5/855 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0015

摘要： Provided is a mask blank which is used for manufacturing an imprinting mold and which may form a fine mold pattern with high pattern accuracy. A mask blank (10) includes a transparent substrate (1) and a thin film (2) contacted with a surface of the substrate. The thin film (2) includes a laminated film including an upper layer (4) which is composed of a material containing silicon (Si) or a material containing tantalum (Ta), and a lower layer (3) which is composed of a material containing at least one of hafnium (Hf) and zirconium (Zr) and containing substantially no oxygen.

摘要翻译： 提供了用于制造压印模具的掩模坯料，并且可以形成具有高图案精度的精细模具图案。 掩模坯料（10）包括透明基板（1）和与基板表面接触的薄膜（2）。 薄膜（2）包括层叠膜，该层叠膜包括由含有硅（Si）的材料或含有钽（Ta）的材料构成的上层（4）和由材料构成的下层（3） 含有铪（Hf）和锆（Zr）中的至少一种并且基本上不含氧。

公开(公告)号：US08404406B2

公开(公告)日：2013-03-26

申请号：US12935519

申请日：2009-03-31

申请人： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto

发明人： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto

IPC分类号： G03F1/22

CPC分类号： G03F1/32 ,  G03F1/50

摘要： The present invention provides a photomask blank in which a light-shielding film consisting of a plurality of layers is provided on a light transmissive substrate, wherein a layer that is provided to be closest to the front surface is made of CrO, CrON, CrN, CrOC or CrOCN, and wherein the atom number density of the front-surface portion of the light-shielding film is 9×1022 to 14×1022 atms/cm3.

摘要翻译： 本发明提供了一种光掩模坯料，其中由多层构成的遮光膜设置在透光基板上，其中设置成最靠近前表面的层由CrO，CrON，CrN， CrOC或CrOCN，其中遮光膜的前表面部分的原子数密度为9×1022〜14×1022atms / cm3。

公开(公告)号：US08329364B2

公开(公告)日：2012-12-11

申请号：US13001365

申请日：2009-06-25

申请人： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto

发明人： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto

IPC分类号： G06F1/22

CPC分类号： G03F1/58 ,  G03F1/32

摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.

摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中从靠近透光基底的一侧依次层叠下层，中间层和上层; 整个遮光膜的厚度为60nm以下; 下层由含有金属的膜制成，具有第一蚀刻速率; 上层由含有金属的膜制成，具有第三蚀刻速率; 中间层由含有与下层或上层相同的金属的膜制成，具有比第一蚀刻速度和第三蚀刻速度低的第二蚀刻速率; 并且中间层的厚度为整个遮光膜的厚度的30％以下。

公开(公告)号：US20120251931A1

公开(公告)日：2012-10-04

申请号：US13501348

申请日：2010-10-08

申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

IPC分类号： G03F1/00 ,  G03F7/20 ,  G03F1/76 ,  G03F1/46 ,  G03F1/26

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.

摘要翻译： 提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。 图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

公开(公告)号：US20120251929A1

公开(公告)日：2012-10-04

申请号：US13491957

申请日：2012-06-08

申请人： Osamu NOZAWA ,  Masahiro HASHIMOTO

发明人： Osamu NOZAWA ,  Masahiro HASHIMOTO

IPC分类号： G03F1/26 ,  G03F7/20 ,  B82Y30/00

CPC分类号： G03F1/32 ,  G03F1/54

摘要： A phase shift mask blank having, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nrn, a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28.

摘要翻译： 一种相移掩模坯料，其在透明基板上具有包括具有等于或大于9％的透光率的光学特性的金属，硅（Si）和氮（N）作为主要成分的相移膜，以及 相对于ArF准分子激光束的波长和相位差等于或大于150度且小于180度的等于或小于30％，以及形成在相移膜上的遮光膜。 相移膜的厚度等于或小于80nrn，相对于ArF准分子激光束的波长的折射率（n）等于或大于2.3，消光系数（k）相等 大于或等于0.28。

公开(公告)号：US20120156596A1

公开(公告)日：2012-06-21

申请号：US13327008

申请日：2011-12-15

申请人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroyuki IWASHITA

发明人： Atsushi KOMINATO ,  Masahiro HASHIMOTO ,  Hiroyuki IWASHITA

IPC分类号： G03F7/00 ,  G03F1/72 ,  B32B7/02 ,  G03F1/00

CPC分类号： G03F1/50 ,  G03F1/00 ,  G03F1/58 ,  G03F1/74 ,  G03F7/2006 ,  Y10T428/24942

摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.

摘要翻译： 公开了一种用于制造适于施加ArF准分子激光曝光光的转印掩模的掩模坯料。 掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 所述遮光膜具有从所述透明基板侧起包括下层和上层的至少两层结构。 下层由过渡金属，硅和氮组成的材料制成，氮含量为21原子％以上，折射率n为1.9以下。 上层由过渡金属，硅和氮组成的材料制成，折射率n为2.1以下。 上层的表面层含有氧，氮含量为14原子％以上。