公开(公告)号：US07957579B2

公开(公告)日：2011-06-07

申请号：US11931856

申请日：2007-10-31

申请人： Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Aritoshi Sugimoto ,  Maki Tanaka ,  Hiroshi Miyai ,  Asahiro Kuni ,  Yasuhiko Nara

发明人： Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Aritoshi Sugimoto ,  Maki Tanaka ,  Hiroshi Miyai ,  Asahiro Kuni ,  Yasuhiko Nara

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/956 ,  G01N2021/8854 ,  G01N2021/8861 ,  G01N2021/8864 ,  G01R31/311 ,  G03F1/86 ,  G06T1/0007 ,  G06T7/0002 ,  G06T7/001 ,  G06T2200/24 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/28

摘要： An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.

摘要翻译： 一种用于处理缺陷候选图像的装置，包括：扫描电子显微镜，用于通过照射和扫描聚集的电子束到样品上并通过照射检测从样品发出的带电粒子，从而获取样本的放大图像; 用于处理由扫描电子显微镜拍摄的图像以检测样本上的缺陷候选的图像处理器，并将检测到的缺陷候选分类为多个等级之一; 用于存储来自图像处理器的输出的存储器，包括检测到的缺陷候选的图像; 以及显示单元，其显示存储在存储器中的信息和指示器，其中，所述显示单元通过由所述分类的类区分来以地图格式显示所检测和分类的缺陷候选的分布，并且所述显示单元还显示图像 存储在存储器中的缺陷候选者以及由指示符在地图上指示的地图。

公开(公告)号：US20100246933A9

公开(公告)日：2010-09-30

申请号：US11931856

申请日：2007-10-31

申请人： Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Aritoshi Sugimoto ,  Maki Tanaka ,  Hiroshi Miyai ,  Asahiro Kuni ,  Yasuhiko Nara

发明人： Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Aritoshi Sugimoto ,  Maki Tanaka ,  Hiroshi Miyai ,  Asahiro Kuni ,  Yasuhiko Nara

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/956 ,  G01N2021/8854 ,  G01N2021/8861 ,  G01N2021/8864 ,  G01R31/311 ,  G03F1/86 ,  G06T1/0007 ,  G06T7/0002 ,  G06T7/001 ,  G06T2200/24 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/28

摘要： An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.

摘要翻译： 一种用于处理缺陷候选图像的装置，包括：扫描电子显微镜，用于通过照射和扫描聚集的电子束到样品上并通过照射检测从样品发出的带电粒子，从而获取样本的放大图像; 用于处理由扫描电子显微镜拍摄的图像以检测样本上的缺陷候选的图像处理器，并将检测到的缺陷候选分类为多个等级之一; 用于存储来自图像处理器的输出的存储器，包括检测到的缺陷候选的图像; 以及显示单元，其显示存储在存储器中的信息和指示器，其中，所述显示单元通过由所述分类的类区分来以地图格式显示所检测和分类的缺陷候选的分布，并且所述显示单元还显示图像 存储在存储器中的缺陷候选者以及由指示符在地图上指示的地图。

公开(公告)号：US20080197280A1

公开(公告)日：2008-08-21

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： G01B15/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US20070187595A1

公开(公告)日：2007-08-16

申请号：US11673057

申请日：2007-02-09

申请人： Maki Tanaka ,  Chie Shishido

发明人： Maki Tanaka ,  Chie Shishido

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  G01N2223/6116 ,  H01J2237/24578

摘要： To provide a consistent, high-speed, high-precision measurement method based on an electron beam simulation by reflecting the apparatus characteristics of a CD-SEM in an electron beam simulation, the present invention discloses a method for measuring a measurement target pattern with a CD-SEM, the method comprising the steps of performing an electron beam simulation on various target pattern shapes, which is reflected apparatus characteristic and image acquisition conditions; creating SEM simulated waveforms; storing a combination of the created SEM simulated waveforms and pattern shape information corresponding to the created SEM simulated waveforms as a library; comparing an acquired actual electron microscope image with the SEM simulated waveforms; selecting the SEM simulated waveform that is most similar to the actual electron microscope image; and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform.

摘要翻译： 为了通过在电子束模拟中反映CD-SEM的装置特性，基于电子束模拟提供一致的，高速，高精度的测量方法，本发明公开了一种用于测量目标图案的方法， CD-SEM，该方法包括以下步骤：对各种目标图案形状进行电子束模拟，反射装置特性和图像采集条件; 创建SEM模拟波形; 存储所创建的SEM模拟波形的组合和对应于所创建的SEM模拟波形的图案形状信息作为库; 将获得的实际电子显微镜图像与SEM模拟波形进行比较; 选择与实际电子显微镜图像最相似的SEM模拟波形; 以及根据与选择的SEM模拟波形对应的图案形状信息来估计测量对象图案的形状。

公开(公告)号：US20070120078A1

公开(公告)日：2007-05-31

申请号：US11657689

申请日：2007-01-25

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86 ,  G01V8/00

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.

摘要翻译： 测量图案尺寸的方法包括评估图案的横截面形状与特定图像处理技术中的图案的测量误差之间的关系，并且进行实际测量，其中评估对象图案的尺寸测量从图像信号 基于图案的截面形状与先前评估的图案的测量误差之间的关系，进行显微镜的修正，并修正评价对象图案的尺寸测量的误差。

公开(公告)号：US07166839B2

公开(公告)日：2007-01-23

申请号：US11320752

申请日：2005-12-30

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US07116816B2

公开(公告)日：2006-10-03

申请号：US09793922

申请日：2001-02-28

申请人： Maki Tanaka ,  Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroshi Morioka ,  Kenji Watanabe ,  Hiroshi Miyai ,  Mari Nozoe

发明人： Maki Tanaka ,  Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroshi Morioka ,  Kenji Watanabe ,  Hiroshi Miyai ,  Mari Nozoe

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06T2207/10056 ,  G06T2207/30121 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2811 ,  H01J2237/2817

摘要： In order to enable the most suitable image processing condition to be set as one in which a dispersion in brightness between comparing images caused by object to be inspected and an image detecting system is not applied as a false information, in the present invention, there is obtained a noise characteristic of a secondary electron image caused by the image detecting system is calculated, the most suitable image processing parameters are determined depending on the object to be inspected on the basis of the characteristic, and its comparing processing is performed by using the noise characteristic and the image of the object to be inspected, thereby a dispersion in process for the object to be inspected is evaluated.

摘要翻译： 为了使最合适的图像处理条件被设置为将未被应用的被检查对象所引起的比较图像与图像检测系统之间的亮度的色散作为虚假信息，在本发明中，存在 计算出由图像检测系统引起的二次电子图像的噪声特性，根据特性根据被检查对象确定最合适的图像处理参数，并且通过使用噪声来执行其比较处理 特性和待检查对象的图像，从而评估待检查对象的分散处理。

公开(公告)号：US06984589B2

公开(公告)日：2006-01-10

申请号：US10460217

申请日：2003-06-13

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/306

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process.According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained.The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US20050285034A1

公开(公告)日：2005-12-29

申请号：US11156478

申请日：2005-06-21

申请人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

发明人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/2814

摘要： The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

摘要翻译： 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置，其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说，倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像（倾斜二次电子图像）I（2） 2）。 然后，轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率（或表面倾斜角），并且连续地积分每个假设的斜率值（或表面倾斜角值），以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。

公开(公告)号：US06940069B2

公开(公告)日：2005-09-06

申请号：US10637496

申请日：2003-08-11

申请人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

发明人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

IPC分类号： G01N23/04 ,  G01N23/20 ,  G01N23/225 ,  G01Q30/04 ,  G02F1/13 ,  G06T1/00 ,  G21K7/00 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  G01N23/00

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/24465 ,  H01J2237/2817

摘要： A pattern inspection method which irradiates a charged particle beam onto a surface of a specimen on which a pattern is formed, simultaneously detecting with plural sensors secondary particles emanated from the surface of the specimen by the irradiation, adding signals outputted from each sensor of the plural sensors which simultaneously detected the secondary particles, obtaining an image of the surface of the specimen on which the pattern is formed from the added signals and processing the image to detect a defect of the pattern.

摘要翻译： 将带电粒子束照射在其上形成有图案的样本的表面上的图案检查方法，同时利用多个传感器检测从照射后从样品表面发出的二次粒子，从多个传感器的每个传感器输出的相加信号 同时检测次级粒子的传感器，从附加的信号获得形成有图案的样本的表面的图像，并处理图像以检测图案的缺陷。