公开(公告)号：US20110296766A1

公开(公告)日：2011-12-08

申请号：US13153176

申请日：2011-06-03

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： B24D3/06 ,  C09K3/14

CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B24B53/017 ,  B24D3/24 ,  B24D11/001

摘要： Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

摘要翻译： 公开和描述了超研磨工具及其制造方法。 在一个方面，超磨料颗粒通过钎焊合金根据预定图案化学键合到基质载体材料上。 钎焊合金可以提供为粉末，薄片或非晶合金片。 可以使用具有以预定图案布置的多个孔的模板来将超研磨颗粒放置在给定的基底或基质支撑材料上。

公开(公告)号：US20110286943A1

公开(公告)日：2011-11-24

申请号：US13071050

申请日：2011-03-24

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： A61K8/02 ,  A61Q17/04

CPC分类号： B82Y5/00 ,  A61K8/0241 ,  A61K8/11 ,  A61K8/19 ,  A61K2800/413 ,  A61K2800/612 ,  A61K2800/651 ,  A61Q17/04 ,  B82Y30/00

摘要： The present invention provides sunscreen compositions and associated methods. In one aspect, for example, a sunscreen composition can include a cosmetically acceptable carrier and a plurality of nanoparticles dispersed in the carrier with a dispersant. The nanoparticles include at least one sun-block functional group operable to provide UV radiation protection. In one aspect the nanoparticles can be nanodiamond particles.

摘要翻译： 本发明提供防晒组合物和相关方法。 在一个方面，例如，防晒组合物可以包括化妆品可接受的载体和分散在载体中的多种纳米颗粒与分散剂。 纳米颗粒包括可操作以提供紫外线辐射防护的至少一个太阳能功能组。 在一个方面，纳米颗粒可以是纳米金刚石颗粒。

公开(公告)号：US20110204409A1

公开(公告)日：2011-08-25

申请号：US13014105

申请日：2011-01-26

申请人： Chien-Min Sung ,  Shao Chung Hu ,  Chien-Chung Teng ,  Shang-Ray Yang ,  Michael Sung

发明人： Chien-Min Sung ,  Shao Chung Hu ,  Chien-Chung Teng ,  Shang-Ray Yang ,  Michael Sung

IPC分类号： H01L33/64 ,  C09K5/08 ,  H05K1/00 ,  H05K1/03 ,  H05K7/20 ,  F28F7/00

CPC分类号： H05K1/0373 ,  H05K1/0203 ,  H05K1/0366 ,  H05K1/056 ,  H05K2201/0209 ,  H05K2201/10106 ,  Y10T428/2481 ,  Y10T428/24893

摘要： Electrically insulating layers having increased thermal conductivity, as well as associated devices and methods are disclosed. In one aspect, for example, a printed circuit board is provided including a substrate and an electrically insulating layer coated on at least one surface of the substrate, the electrically insulating layer including a plurality of hBN particles bound in a binder material.

摘要翻译： 公开了具有增加的导热性的电绝缘层以及相关的装置和方法。 一方面，例如，提供印刷电路板，其包括基板和涂覆在基板的至少一个表面上的电绝缘层，电绝缘层包括以粘合剂材料结合的多个hBN颗粒。

公开(公告)号：US20110068350A1

公开(公告)日：2011-03-24

申请号：US11809719

申请日：2007-05-31

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： H01L31/0312 ,  H01L21/223

CPC分类号： H01L21/02527 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0262 ,  H01L33/0079 ,  H01L33/641

摘要： Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer, and coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond support is oriented parallel to the transparent diamond layer. In one aspect such a method may further include electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers.

摘要翻译： 提供了用于制造这种器件的半导体器件和方法。 一种这样的方法可以包括形成具有与其结合的SiC层的透明金刚石层，其中SiC层具有与透明金刚石层基本上外延匹配的晶体结构，在SiC层上外延地形成多个半导体层，并且耦合 将金刚石基底施加到所述多个半导体层中的至少一个，使得所述金刚石支撑体平行于所述透明金刚石层定向。 在一个方面，这种方法还可以包括将p型电极或n型电极中的至少一个电耦合到多个半导体层中的至少一个。

公开(公告)号：US07867802B2

公开(公告)日：2011-01-11

申请号：US12686288

申请日：2010-01-12

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： H01L21/00

CPC分类号： H01L33/34

摘要： LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

摘要翻译： 提供了包含金刚石材料的LED装置和用于制造这种装置的方法。 一种这样的方法可以包括在基本上单晶Si晶片上外延地形成基本上单晶SiC层，在SiC层上外延地形成基本单晶金刚石层，掺杂金刚石层以形成导电金刚石层，将Si晶片除去 暴露与导电金刚石层相对的SiC层，在SiC层上外延形成多个半导体层，使得至少一个半导体层接触SiC层，并将n型电极耦合到半导体中的至少一个 使得多个半导体层功能地位于导电金刚石层和n型电极之间。

公开(公告)号：US07846767B1

公开(公告)日：2010-12-07

申请号：US11899953

申请日：2007-09-06

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： H01L21/00

CPC分类号： H01L21/76256 ,  Y10S438/977

摘要： Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD device is provided that includes etching depressions into an etch surface of a semiconductor substrate to a uniform depth, depositing a diamond layer onto the etch surface to form diamond-filled depressions, and thinning the semiconductor substrate at a thinning surface opposite the etch surface until the diamond filled depressions are exposed, thus forming a semiconductor device having a thickness substantially equal to the uniform depth.

摘要翻译： 提供了金刚石半导体（SOD）基板和制造这种基板的方法。 在一个方面，提供了一种制造SOD器件的方法，其包括将凹陷蚀刻到半导体衬底的蚀刻表面至均匀的深度，将金刚石层沉积到蚀刻表面上以形成金刚石填充的凹陷，以及使半导体衬底变薄 在与蚀刻表面相对的薄化表面处，直到金刚石填充的凹陷被暴露，从而形成具有基本上等于均匀深度的厚度的半导体器件。

公开(公告)号：US20100261419A1

公开(公告)日：2010-10-14

申请号：US12710818

申请日：2010-02-23

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： B24B53/00 ,  C09K3/14 ,  B24D3/00

CPC分类号： B24D18/0054 ,  B24B53/017

摘要： Superabrasive tools and associated methods of making and using are provided. In one aspect, for example, a superabrasive tool having improved superabrasive particle retention is provided. Such a tool can include a matrix layer and a plurality of superabrasive particles held in and protruding from the matrix layer, whereby surfaces of the plurality of superabrasive particles contacting the matrix layer have been roughened to have an RA of greater than about 1 micron, and wherein the roughened surfaces improve the retention of the plurality of superabrasive particles in the matrix layer.

摘要翻译： 提供超级磨料工具及相关的制造和使用方法。 一方面，例如，提供了具有改进的超研磨颗粒保持性的超研磨工具。 这种工具可以包括基质层和保持在基质层中并从基质层突出的多个超研磨颗粒，由此与基质层接触的多个超级磨料颗粒的表面已被粗糙化以具有大于约1微米的RA，并且 其中所述粗糙表面改善所述多个超研磨颗粒在所述基质层中的保留。

公开(公告)号：US07799600B2

公开(公告)日：2010-09-21

申请号：US12127453

申请日：2008-05-27

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/34 ,  H01L33/641 ,  Y10S438/931

摘要： LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

摘要翻译： 提供了用于制造这种装置的LED装置和方法。 一种这样的方法可以包括在基本上单晶Si晶片上外延地形成基本上单晶SiC层，在SiC层上外延地形成基本单晶金刚石层，掺杂金刚石层以形成导电金刚石层，将Si晶片除去 暴露与导电金刚石层相对的SiC层，在SiC层上外延形成多个半导体层，使得至少一个半导体层接触SiC层，并将n型电极耦合到半导体中的至少一个 使得多个半导体层功能地位于导电金刚石层和n型电极之间。

公开(公告)号：US20100221988A1

公开(公告)日：2010-09-02

申请号：US12716734

申请日：2010-03-03

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： B24B53/12

CPC分类号： B24B53/12 ,  B24B7/228 ,  B24D7/06

摘要： A cutting device comprises a base having a solidified organic material layer disposed thereon. A plurality of individual polycrystalline cutting elements are secured in the solidified organic material layer. Each of the plurality of individual polycrystalline cutting elements has a substantially matching geometric configuration.

摘要翻译： 切割装置包括其上设置有凝固的有机材料层的基部。 多个单独的多晶切割元件被固定在固化的有机材料层中。 多个单独的多晶切割元件中的每一个具有基本匹配的几何构型。

公开(公告)号：US20100219418A1

公开(公告)日：2010-09-02

申请号：US12755034

申请日：2010-04-06

申请人： Chien-Min Sung

发明人： Chien-Min Sung

IPC分类号： H01L33/02 ,  H01L29/24 ,  H01L29/20 ,  H01L33/00 ,  H01L33/10

CPC分类号： H01L33/025 ,  H01L33/0079 ,  H01L33/34 ,  H01L33/641

摘要： LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

摘要翻译： 提供了包含金刚石材料的LED装置和用于制造这种装置的方法。 一种这样的方法可以包括在基本上单晶Si晶片上外延地形成基本上单晶SiC层，在SiC层上外延地形成基本单晶金刚石层，掺杂金刚石层以形成导电金刚石层，将Si晶片除去 暴露与导电金刚石层相对的SiC层，在SiC层上外延形成多个半导体层，使得至少一个半导体层接触SiC层，并将n型电极耦合到半导体中的至少一个 使得多个半导体层功能地位于导电金刚石层和n型电极之间。