公开(公告)号：US5620925A

公开(公告)日：1997-04-15

申请号：US327450

申请日：1994-10-21

申请人： Rempei Nakata ,  Hitoshi Itoh ,  Takashi Endo ,  Tohru Watanabe

发明人： Rempei Nakata ,  Hitoshi Itoh ,  Takashi Endo ,  Tohru Watanabe

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/255

CPC分类号： H01L21/28525 ,  H01L21/76879

摘要： A method of manufacturing a semiconductor device comprising the steps of forming an insulating layer on a first conductive layer deposited on a semiconductor substrate, treating the surface of the insulating layer and the exposed surface of the first conductive layer with a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber housing the sample, and applying high frequency power. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber to adsorb the halogen atoms on the inner wall of the chamber, and applying high frequency power. Alternatively, the gas plasma can be formed by applying high frequency power after placing the sample and a halogen containing material inside the chamber. By treatment with the gas plasma containing halogen atoms, a second conductive layer can be deposited with good selectivity.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在沉积在半导体衬底上的第一导电层上形成绝缘层，用包含卤素原子的气体等离子体处理绝缘层的表面和第一导电层的暴露表面， 以及通过气相生长选择性地沉积在第一导电层的暴露表面上以形成第二导电层的导电材料。 含有卤素原子的气体等离子体可以通过将含有卤素原子的气体引入到容纳样品的处理室中并施加高频功率来形成。 含有卤原子的气体等离子体可以通过将含有卤素原子的气体引入处理室来吸附室内壁上的卤素原子并施加高频功率来形成。 或者，可以在将样品和含卤素材料放置在室内之后施加高频功率来形成气体等离子体。 通过用含有卤原子的气体等离子体处理，可以以良好的选择性沉积第二导电层。

公开(公告)号：US5552628A

公开(公告)日：1996-09-03

申请号：US389563

申请日：1995-02-16

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58 ,  H01L23/48

CPC分类号： H01L23/53271 ,  H01L21/316 ,  H01L21/76819 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device of the present invention comprises a silicon substrate, a silicon oxide layer formed on the silicon substrate, first aluminum wires formed on the silicon oxide layer, a CVD SiO.sub.2 layer covering at least the first aluminum wires, and an inorganic oxide precipitated from a liquid-phase material, the inorganic oxide filling at least a gap between the first aluminum wires.

摘要翻译： 本发明的半导体器件包括硅衬底，形成在硅衬底上的氧化硅层，形成在氧化硅层上的第一铝线，至少覆盖第一铝线的CVD SiO 2层和从 液相材料，无机氧化物至少填充第一铝线之间的间隙。

公开(公告)号：US5437961A

公开(公告)日：1995-08-01

申请号：US263415

申请日：1994-06-21

申请人： Hiroyuki Yano ,  Haruo Okano ,  Tohru Watanabe ,  Keiji Horioka

发明人： Hiroyuki Yano ,  Haruo Okano ,  Tohru Watanabe ,  Keiji Horioka

IPC分类号： G03F7/00 ,  H01L21/027 ,  H01L21/768

CPC分类号： G03F7/0005 ,  H01L21/0276 ,  H01L21/76885 ,  Y10S430/151 ,  Y10S438/95

摘要： A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.

摘要翻译： 公开了制造半导体器件的方法。 该方法包括以下步骤：在形成在光反射层上的光反射层或透明层上形成碳层，在碳层上形成感光性树脂层，在感光性树脂层上选择性地照射光，形成感光性树脂 通过显影选择性地照射光的感光性树脂层，通过使用感光图案作为掩模蚀刻碳层形成碳图案，并且通过使用以下方式蚀刻光反射层来形成光反射图案或透明层图案： 感光性树脂层或碳图案作为掩模。 当形成光反射层图案时，碳层的厚度设定为小于100nm。 当形成透明层图案时，碳层的厚度设定为80nm以上。

公开(公告)号：US5302548A

公开(公告)日：1994-04-12

申请号：US819051

申请日：1992-01-10

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/441 ,  H01L21/324

CPC分类号： H01L23/5328 ,  H01L21/312 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/12044

摘要： A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film. An inorganic layer is deposited as a protective layer.

摘要翻译： 半导体器件包括至少一个布线层，该布线层含有铝作为主要成分，并且通过在其上形成有元件或元件的半导体衬底上的绝缘膜提供，并且提供具有小吸水性基团的耐热高分子有机膜 在布线层的侧表面上。 耐热性高分子有机膜优选由聚苯硫醚形成。 半导体器件的方法包括以下步骤：在半导体衬底上形成元件，在元件上形成绝缘膜，通过沉积和图案化形成铝布线层，沉积具有吸水率小的自由基的耐热高分子有机膜 性质，并在耐热高分子有机膜的温度下加热以使流化并平坦化耐热性高分子有机膜。 沉积无机层作为保护层。

公开(公告)号：US5104162A

公开(公告)日：1992-04-14

申请号：US445759

申请日：1989-12-04

申请人： Tohru Watanabe

发明人： Tohru Watanabe

IPC分类号： B23P19/00 ,  B23P19/04 ,  F16D13/68

CPC分类号： F16D13/683 ,  B23P19/002 ,  B23P19/04 ,  Y10T29/53926

摘要： There is disclosed a method and apparatus for aligning and assembling disk-shaped works having projections on outer peripheries thereof.A vessel-shaped work is positioned and a plurality of disk-shaped works in a stacked condition are guided to a position on the opening edge of the vessel-shaped work by the work guide means, and then the pin provided for up and down movement on the rotary head is either inserted between adjacent ones of the projections of the disk-shaped works or contacted with and stopped by an upper face of one of the projections of the disk-shaped works. Also when the pin is stopped by the upper face of the one projection, as the rotary head is rotated, the pin is moved in the circumferential direction of the disk-shaped works so that it is disengaged from the upper face of the one projection and then engaged with an adjacent one of the projections of the disk-shaped work. Thus, the disk-shaped works are finally rotated in an integral relationship by the pin. Accordingly, the projections of the disk-shaped works are successively aligned with and fitted into the recessed grooves of the vessel-shaped work beginning with the lowermost one of the disk-shaped works. In this manner, the plurality of disk-shaped works are finally assembled in an aligned condition to the inside of the vessel-shaped work.

摘要翻译： 公开了一种用于对准和组装具有在其外周上具有突起的盘形工件的方法和装置。 将容器状的工件定位，并且将堆叠状态的多个圆盘状工件通过工作引导装置引导到容器状工件的开口边缘上的位置，然后设置用于上下运动的销 在旋转头上插入盘形工件的相邻的突起之间，或者与盘形工件的一个突起的上表面接触并停止。 此外，当销被一个突起的上表面停止时，当旋转头旋转时，销沿圆盘状工件的圆周方向移动，使其从一个突起的上表面脱离，并且 然后与盘形工件的相邻的一个突起接合。 因此，盘形工件最终以销的整体关系旋转。 因此，圆盘状工件的凸起与盘形工件的最下面的一起形成连续对齐并嵌合在容器状工件的凹槽中。 以这种方式，多个盘状工件最终以对准的状态组装到容器状作业的内部。

公开(公告)号：US5032491A

公开(公告)日：1991-07-16

申请号：US234725

申请日：1988-08-22

申请人： Katsuya Okumura ,  Tohru Watanabe

发明人： Katsuya Okumura ,  Tohru Watanabe

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/0271 ,  H01L21/31138

摘要： A photoresist is coated on a substrate to form a planar surface, thus to form a recessed portions corresponding to a mask of a pattern to be formed in the photoresist layer having planar surface. SiO.sub.2 etc. are deposited into the recessed portions to prepare a mask, thus to form a fine pattern by anisotropic etching. As a result, by films remaining below the recessed portions formed in the photoresist layer having planar surface, a fine pattern is formed.

公开(公告)号：US4478678A

公开(公告)日：1984-10-23

申请号：US584530

申请日：1984-02-28

申请人： Tohru Watanabe

发明人： Tohru Watanabe

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： C23F4/00 ,  H01L21/32136 ,  H01L21/32137

摘要： The method of reactive ion etching molybdenum or molybdenum silicide includes the steps of placing a sample to be etched on one of two opposed electrodes in a vacuum chamber, charging an etching gas into the chamber, applying high frequency electrical power to the electrodes to generate a discharge between them, and etching the exposed portion of the sample. The gas is a mixture of chlorine and oxygen, with the oxygen flow rate being less than about 30% of the total flow rate of the mixture.

摘要翻译： 反应离子蚀刻钼或硅化钼的方法包括以下步骤：将要蚀刻的样品放置在真空室中的两个相对的电极中的一个上，将蚀刻气体充入室中，向电极施加高频电力以产生 在它们之间放电，并蚀刻样品的暴露部分。 气体是氯和氧的混合物，其氧气流速小于混合物总流速的约30％。