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    Device with MEMS Structure and Ventilation Path in Support Structure
    92.
    发明申请
    Device with MEMS Structure and Ventilation Path in Support Structure 有权
    具有MEMS结构的装置和支撑结构中的通风路径

    公开(公告)号：US20150014796A1

    公开(公告)日：2015-01-15

    申请号：US13941318

    申请日：2013-07-12

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe

    IPC: B81B3/00

    CPC classification number: B81B3/0021 ,  B81B3/0094 ,  B81B7/0016 ,  B81B2201/0257 ,  B81B2203/0127 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/15151 ,  H01L2924/16152

    Abstract: A device includes a support structure, a sound port disposed in the support structure, and a MEMS structure including a membrane acoustically coupled to the sound port. The membrane separates a first space contacting a first side of the membrane from a second space contacting an opposite second side of the membrane. The device further includes an adjustable ventilation path disposed in the support structure and extending from the sound port to the second space.

    Abstract translation: 一种装置包括支撑结构，设置在支撑结构中的声音端口，以及包括声耦合到声音端口的膜的MEMS结构。 膜将与膜的第一侧接触的第一空间与接触膜的相对的第二侧的第二空间分离。 该装置还包括设置在支撑结构中并从声音端口延伸到第二空间的可调整的通风路径。

    Comb MEMS Device and Method of Making a Comb MEMS Device
    93.
    发明申请
    Comb MEMS Device and Method of Making a Comb MEMS Device 有权
    梳状MEMS器件和制造梳状MEMS器件的方法

    公开(公告)号：US20140197502A1

    公开(公告)日：2014-07-17

    申请号：US13743306

    申请日：2013-01-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： Alfons Dehe

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00968 ,  B81C2201/112

    Abstract: A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.

    Abstract translation: 公开了MEMS器件和制造MEMS器件的方法。 一个实施例包括在衬底的第一主表面中形成沟槽，通过在沟槽中形成导电材料形成导电指状物并从衬底的第二主表面形成开口，从而暴露导电指状物，第二主表面与第一主表面相反 主表面。

    Test Structures and Methods
    95.
    发明申请
    Test Structures and Methods 有权

    公开(公告)号：US20130258301A1

    公开(公告)日：2013-10-03

    申请号：US13902412

    申请日：2013-05-24

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe

    IPC: G01N21/956 ,  H01J37/26

    CPC classification number: H02N99/00 ,  G01N21/956 ,  G03F1/26 ,  G03F1/32 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  H01J37/26 ,  H01L22/12 ,  H04R7/10 ,  H04R31/003 ,  Y10S438/942

    Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.

    Plate, Transducer and Methods for Making and Operating a Transducer
    96.
    发明申请
    Plate, Transducer and Methods for Making and Operating a Transducer 审中-公开
    板，传感器和制造和操作传感器的方法

    公开(公告)号：US20130257218A1

    公开(公告)日：2013-10-03

    申请号：US13902462

    申请日：2013-05-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： Alfons Dehe

    IPC: H02N99/00

    CPC classification number: H02N99/00 ,  G01N21/956 ,  H01J37/26 ,  H02N1/08 ,  H04R7/10 ,  H04R19/04 ,  H04R31/003 ,  Y10T428/24281

    Abstract: A plate, a transducer, a method for making a transducer, and a method for operating a transducer are disclosed. An embodiment comprises a plate comprising a first material layer comprising a first stress, a second material layer arranged beneath the first material layer, the second material layer comprising a second stress, an opening arranged in the first material layer and the second material layer, and an extension extending into opening, wherein the extension comprises a portion of the first material layer and a portion of the second material layer, and wherein the extension is curved away from a top surface of the plate based on a difference in the first stress and the second stress.

    Abstract translation: 公开了一种板，换能器，制造换能器的方法以及用于操作换能器的方法。 一个实施例包括一个板，该板包括第一应力的第一材料层，布置在第一材料层下方的第二材料层，第二材料层包括第二应力，布置在第一材料层和第二材料层中的开口，以及 延伸到开口中的延伸部，其中所述延伸部包括所述第一材料层的一部分和所述第二材料层的一部分，并且其中所述延伸部基于所述第一应力和所述第二应力的差异而从所述板的顶部表面弯曲 第二个压力。

    Low profile transducer module
    99.
    发明授权
    Low profile transducer module 有权

    公开(公告)号：US11267698B2

    公开(公告)日：2022-03-08

    申请号：US16157142

    申请日：2018-10-11

    Applicant: Infineon Technologies AG

    Inventor： Horst Theuss ,  Alfons Dehe

    IPC: B81B7/00

    Abstract: A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.

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