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    Tertiary amine compounds having an ester structure and processes for preparing same
    91.
    发明授权
    Tertiary amine compounds having an ester structure and processes for preparing same 有权
    具有酯结构的叔胺化合物及其制备方法

    公开(公告)号：US07084303B2

    公开(公告)日：2006-08-01

    申请号：US10127120

    申请日：2002-04-22

    申请人： Takeru Watanabe ,  Koji Hasegawa ,  Takeshi Kinsho ,  Jun Hatakeyama

    发明人： Takeru Watanabe ,  Koji Hasegawa ,  Takeshi Kinsho ,  Jun Hatakeyama

    IPC分类号： C07C211/00

    CPC分类号： C07D307/33 ,  C07C229/12 ,  C07C229/16 ,  C07C2601/14 ,  C07D307/12 ,  C07D309/12 ,  C07D317/24 ,  G03F7/0045 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397

    摘要： The present invention provides ester group-containing tertiary amine compounds of the formula (R1OCH2CH2)nN(CH2CH2CO2R2)3-n which, when used as additives in chemical amplification photolithography, can yield photoresists having a high resolution and an excellent focus margin. The present invention also provides a process comprising the step of subjecting a primary or secondary amine compound to Michael addition to an acrylic ester compound; a process comprising the steps of subjecting monoethanolamine or diethanolamine to Michael addition to an acrylic ester compound so as to form an ester group-containing amine compound and introducing a R1 group to the resultant ester group-containing amine compound; and a process comprising the step of effecting the ester exchange reaction of an ester group-containing tertiary amine with R2OH.

    摘要翻译： 本发明提供了式（R 1）2 OCH 2 CH 2 N酯的含酯基的叔胺化合物 > N（CH 2 CH 2）2 CO 2 N 2 - （CH 2）3 - n - 当用作化学放大光刻中的添加剂时，可以产生具有高分辨率和优异聚焦余量的光致抗蚀剂。 本发明还提供了一种方法，其包括使伯胺或仲胺化合物与丙烯酸酯化合物进行迈克尔加成步骤; 一种方法包括以下步骤：将一乙醇胺或二乙醇胺加入到丙烯酸酯化合物中以形成含酯基的胺化合物并将R 1 O 2基团引入所得的含酯基胺 复合; 以及包括使含酯基的叔胺与R 2 OH进行酯交换反应的步骤的方法。

    Polymer, resist composition and patterning process
    92.
    发明授权
    Polymer, resist composition and patterning process 失效
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US06509135B2

    公开(公告)日：2003-01-21

    申请号：US09797880

    申请日：2001-03-05

    申请人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Jun Hatakeyama

    IPC分类号： G03F7004

    CPC分类号： C08F32/08 ,  G03F7/0045 ,  G03F7/039

    摘要： A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the remainders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the remainders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, X is —CH2— or —O—, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.

    摘要翻译： 提供了包含式（1）的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H，甲基或CH2CO2R3，R2是H，甲基或CO2R3，R3是烷基，R4是H，烷基，烷氧基烷基或酰基 ，R 5和R 15是酸不稳定基团，R6至R9中的至少一个是含羧基或含羟基的一价烃基，剩余物为H或烷基，R 10至R 13中的至少一个为含有 -CO 2部分结构，其余为H或烷基，R 14为多环烃基或含多环烃基的烷基，Z为三价烃基，X为-CH 2 - 或-O-，k = 0或1 ，x为> 0，a，b，c和d为> = 0，满足x + a + b + c + d = 1。 包含聚合物的抗蚀剂组合物具有显着提高的灵敏度，分辨率和耐蚀刻性，并且在微细加工中非常有用。

    Double patterning process
    96.
    发明授权
    Double patterning process 有权
    双重图案化工艺

    公开(公告)号：US08129100B2

    公开(公告)日：2012-03-06

    申请号：US12418090

    申请日：2009-04-03

    申请人： Katsuya Takemura ,  Jun Hatakeyama ,  Kazumi Noda ,  Mutsuo Nakashima ,  Masaki Ohashi ,  Toshinobu Ishihara

    发明人： Katsuya Takemura ,  Jun Hatakeyama ,  Kazumi Noda ,  Mutsuo Nakashima ,  Masaki Ohashi ,  Toshinobu Ishihara

    IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/40 ,  G03F7/039

    CPC分类号： G03F7/0035 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/40

    摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.

    摘要翻译： 通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影 用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB， 并用碱性显影剂显影以形成负的抗蚀剂图案。 最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

    Patterning process and resist composition
    97.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08999630B2

    公开(公告)日：2015-04-07

    申请号：US13546489

    申请日：2012-07-11

    申请人： Jun Hatakeyama ,  Koji Hasegawa ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Koji Hasegawa ,  Kazuhiro Katayama

    IPC分类号： G03F7/32 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

    摘要： An image is formed via positive/negative reversal on organic solvent development using a photoresist film comprising a polymer comprising recurring units of isosorbide (meth)acrylate in which one hydroxyl group of isosorbide is bonded to form (meth)acrylate and the other hydroxyl group is substituted with an acid labile group and an acid generator. The resist film is characterized by a high dissolution contrast between the unexposed and exposed regions. The photoresist film is exposed to radiation and developed in an organic solvent to form a fine hole pattern with good size control and high sensitivity.

    摘要翻译： 通过使用含有包含异山梨醇（甲基）丙烯酸酯的重复单元的聚合物的光致抗蚀剂膜，通过正/负反转在有机溶剂显影上形成图像，其中异山梨醇的一个羟基键合形成（甲基）丙烯酸酯，另一个羟基为 被酸不稳定基团和酸发生剂取代。 抗蚀剂膜的特征在于未曝光区域和曝光区域之间的高溶解度对比度。 将光致抗蚀剂膜暴露于辐射并在有机溶剂中显影以形成具有良好尺寸控制和高灵敏度的细孔图案。

    Basic compound, chemically amplified resist composition, and patterning process
    98.
    发明授权
    Basic compound, chemically amplified resist composition, and patterning process 有权
    碱性化合物，化学放大抗蚀剂组合物和图案化工艺

    公开(公告)号：US08921026B2

    公开(公告)日：2014-12-30

    申请号：US13311192

    申请日：2011-12-05

    申请人： Jun Hatakeyama ,  Masayoshi Sagehashi ,  Takeru Watanabe

    发明人： Jun Hatakeyama ,  Masayoshi Sagehashi ,  Takeru Watanabe

    IPC分类号： G03F7/00 ,  C07D239/28 ,  G03F7/004

    CPC分类号： C07D239/28 ,  G03F7/0045

    摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.

    摘要翻译： 包含基础聚合物，酸产生剂和具有酸不稳定基团取代的羧基的β-丙氨酸，γ-氨基丁酸或5-氨基戊酸衍生物形式的胺猝灭剂的化学放大抗蚀剂组合物具有高 暴露前后的碱溶解速度对比度，形成高分辨率，最小粗糙度和宽焦距的良好轮廓图案。

    Patterning process and resist composition
    99.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08865390B2

    公开(公告)日：2014-10-21

    申请号：US13614494

    申请日：2012-09-13

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Koji Hasegawa

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Koji Hasegawa

    IPC分类号： G03F7/004 ,  G03F7/30 ,  G03F7/039 ,  G03F7/20 ,  G03F1/00 ,  G03F7/32 ,  G03F7/11

    CPC分类号： G03F7/325 ,  G03F1/00 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/70466

    摘要： A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.

    摘要翻译： 通过将包含酸不稳定基取代的乙烯醇和马来酸酐和/或马来酰亚胺的重复单元和/或马来酰亚胺，酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，预烘烤， 能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。