公开(公告)号：US20080128822A1

公开(公告)日：2008-06-05

申请号：US11753186

申请日：2007-05-24

申请人： Masato Koyama ,  Yoshinori Tsuchiya ,  Yuuichi Kamimuta ,  Reika Ichihara ,  Katsuyuki Sekine

发明人： Masato Koyama ,  Yoshinori Tsuchiya ,  Yuuichi Kamimuta ,  Reika Ichihara ,  Katsuyuki Sekine

IPC分类号： H01L27/092

CPC分类号： H01L27/092 ,  H01L21/28097 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

摘要： A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first insulating layer, and containing hafnium, silicon, oxygen, and nitrogen, and a first gate electrode formed on the second insulating layer. The first and second insulating layers have a first and second region respectively. The first and second regions are in a 0.3 nm range in the film thickness direction from an interface between the first insulating layer and the second insulating layer. Each of the first and second regions include aluminum atoms with a concentration of 1×1020 cm−3 or more to 1×1022 cm−3 or less.

摘要翻译： 半导体器件包括：p沟道MIS晶体管，包括：第一绝缘层，形成在源极区域和漏极区域之间的半导体区域上，并且至少包含硅和氧; 形成在所述第一绝缘层上并且包含铪，硅，氧和氮的第二绝缘层，以及形成在所述第二绝缘层上的第一栅电极。 第一和第二绝缘层分别具有第一和第二区域。 第一和第二区域在从第一绝缘层和第二绝缘层之间的界面的膜​​厚度方向上为0.3nm的范围内。 第一和第二区域中的每一个包括浓度为1×10 20 cm -3或更多至1×10 22 cm -3的铝原子， 3 以下。

公开(公告)号：US07265427B2

公开(公告)日：2007-09-04

申请号：US10927115

申请日：2004-08-27

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种的膜，含有SiO 2的膜作为 主要成分为N，以SiO 2为主要成分的膜，Hf和N，以SiO 2为主要成分的膜，Zr和N，或膜 含有SiO 2作为主要成分的Hf，Zr和N.

公开(公告)号：US07220681B2

公开(公告)日：2007-05-22

申请号：US11049671

申请日：2005-02-04

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： A semiconductor device including a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode; wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 一种半导体器件，包括选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅电极下方的沟道区的两侧上的源极区和漏极区; 其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度不大于5×10 22原子/ cm 3。

公开(公告)号：US20070062802A1

公开(公告)日：2007-03-22

申请号：US11516773

申请日：2006-09-07

申请人： Katsuyuki Sekine ,  Shinji Mori ,  Takashi Shimizu

发明人： Katsuyuki Sekine ,  Shinji Mori ,  Takashi Shimizu

IPC分类号： H05F3/00 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C25B9/00

CPC分类号： H01J37/32183 ,  H01J37/32935

摘要： A system for managing a plasma processing apparatus includes an impedance matching tool for matching impedance in a transmission line feeding a high frequency wave generating a plasma into a processing chamber; a collection unit collecting time series data of an adjustment parameter of the impedance matching tool; a reference creation module creating management reference data by reference time series data of the adjustment parameter, the reference time series data collected from a reference plasma process against a reference substrate; an initialization module initializing the adjustment parameter for a target plasma process against a target substrate; a recording module recording target time series data of the adjustment parameter adjusted so as to minimize a reflection wave of the high frequency wave in the target plasma process; and a determination module determining an abnormality of the target plasma process by comparing the target time series data with the management reference data.

摘要翻译： 用于管理等离子体处理装置的系统包括阻抗匹配工具，用于将产生等离子体的高频波馈送到处理室的传输线中的阻抗匹配; 收集单元，收集阻抗匹配工具的调整参数的时间序列数据; 参考创建模块，通过调整参数的参考时间序列数据创建管理参考数据，从参考等离子体处理相对于参考基板收集的参考时间序列数据; 初始化模块将目标等离子体处理的调整参数初始化为目标衬底; 记录模块记录调整参数的目标时间序列数据，以便在目标等离子体处理中使高频波的反射波最小化; 以及确定模块，通过将目标时间序列数据与管理参考数据进行比较来确定目标等离子体处理的异常。

公开(公告)号：US20070034974A1

公开(公告)日：2007-02-15

申请号：US11585915

申请日：2006-10-25

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device comprises a semiconductor region including silicon, and an insulating film including silicon, oxygen, nitrogen, and helium, the dielectric film provided on the semiconductor region, and the dielectric film having a concentration distribution with respect to a film thickness direction, the concentration distribution having a maximal value of concentration of the helium in a surface portion on the semiconductor region side and a maximal value of concentration of the nitrogen in a surface portion on a side opposite to the semiconductor region.

摘要翻译： 半导体器件包括包括硅的半导体区域和包括硅，氧，氮和氦的绝缘膜，设置在半导体区域上的电介质膜和具有相对于膜厚度方向的浓度分布的电介质膜， 在半导体区域侧的表面部分具有氦浓度的最大值的浓度分布和与半导体区域相反的一侧的表面部分中的氮浓度的最大值。

公开(公告)号：US07129125B2

公开(公告)日：2006-10-31

申请号：US10785074

申请日：2004-02-25

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device comprises a semiconductor region including silicon, and an insulating film including silicon, oxygen, nitrogen, and helium, the dielectric film provided on the semiconductor region, and the dielectric film having a concentration distribution with respect to a film thickness direction, the concentration distribution having a maximal value of concentration of the helium in a surface portion on the semiconductor region side and a maximal value of concentration of the nitrogen in a surface portion on a side opposite to the semiconductor region.

摘要翻译： 半导体器件包括包括硅的半导体区域和包括硅，氧，氮和氦的绝缘膜，设置在半导体区域上的电介质膜和具有相对于膜厚度方向的浓度分布的电介质膜， 在半导体区域侧的表面部分具有氦浓度的最大值的浓度分布和与半导体区域相反的一侧的表面部分中的氮浓度的最大值。

公开(公告)号：US20060105582A1

公开(公告)日：2006-05-18

申请号：US11250439

申请日：2005-10-17

申请人： Nobutoshi Aoki ,  Koichi Kato ,  Katsuyuki Sekine ,  Ichiro Mizushima

发明人： Nobutoshi Aoki ,  Koichi Kato ,  Katsuyuki Sekine ,  Ichiro Mizushima

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  H01L29/513 ,  H01L29/518

摘要： A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; and forming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.

摘要翻译： 提供了一种方法：在硅衬底的表面上排列氮原子; 在氢气氛中进行热处理，使得存在于硅衬底表面上的氮原子和硅原子处于三配位键状态; 并且在硅衬底上形成具有氮原子的三配位键状态并保持硅原子的氧化硅膜。

公开(公告)号：US20060094255A1

公开(公告)日：2006-05-04

申请号：US11049671

申请日：2005-02-04

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×10 22个原子/ cm 3。

公开(公告)号：US20060057746A1

公开(公告)日：2006-03-16

申请号：US10986408

申请日：2004-11-12

申请人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

发明人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

IPC分类号： H01L21/66

CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31645

摘要： According to the present invention, there is provided a semiconductor device fabrication method, comprising: depositing a film made of an insulating material on a surface of a semiconductor substrate; measuring a film thickness and/or composition of the film; setting nitriding conditions or oxidation conditions on the basis of the measurement result; and nitriding or oxidizing the film on the basis of the set nitriding conditions or oxidation conditions.

摘要翻译： 根据本发明，提供一种半导体器件制造方法，包括：在半导体衬底的表面上沉积由绝缘材料制成的膜; 测量膜的膜厚度和/或组成; 根据测量结果设定氮化条件或氧化条件; 并根据设定的氮化条件或氧化条件对膜进行氮化或氧化。

公开(公告)号：US20050170666A1

公开(公告)日：2005-08-04

申请号：US10999937

申请日：2004-12-01

申请人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L29/78 ,  H01L21/31 ,  H01L21/469 ,  H01L21/425 ,  H01L21/22

CPC分类号： H01L21/02321 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3143 ,  H01L21/31645 ,  H01L29/518

摘要： A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.

摘要翻译： 本文公开的半导体器件的制造方法包括：在基板上形成含有金属的硅酸盐膜; 并通过使用ND 3 N 3气体将氮和氘引入到硅酸盐膜中。