公开(公告)号：US07741739B2

公开(公告)日：2010-06-22

申请号：US11604687

申请日：2006-11-28

申请人： Shinichi Ito

发明人： Shinichi Ito

IPC分类号： H02K9/00

CPC分类号： H02K5/225 ,  H02K5/141 ,  H02K9/06 ,  H02K9/28

摘要： A cooling airflow introducing guide portion is disposed on a portion of a connector that faces fins of a voltage regulator heatsink so as to extend in a direction of array of the fins so as to ensure a predetermined clearance relative to the fins. An air intake aperture is disposed through a portion of the rear bracket that faces the voltage regulator heatsink.

摘要翻译： 冷却风导入引导部设置在连接器的面对电压调节器散热片的翅片的部分上，以便沿散热片排列方向延伸，以确保相对于翅片的预定间隙。 进气口通过后支架的面向调压器散热器的部分设置。

公开(公告)号：US07604832B2

公开(公告)日：2009-10-20

申请号：US10927155

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： B05D1/02 ,  B05D3/12

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口和基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qgamma（mm）的范围内 相对于溶液的表面张力γ（N / m），通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10 -5（m·sec / N）。

公开(公告)号：US07527918B2

公开(公告)日：2009-05-05

申请号：US10992349

申请日：2004-11-19

申请人： Takehiro Kondoh ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kenji Chiba ,  Shinichi Ito

发明人： Takehiro Kondoh ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kenji Chiba ,  Shinichi Ito

IPC分类号： G03F7/00

CPC分类号： G03F7/40 ,  G03F7/405

摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

摘要翻译： 图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案， 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸 模式。

公开(公告)号：US20090039275A1

公开(公告)日：2009-02-12

申请号：US12216228

申请日：2008-07-01

申请人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

发明人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

IPC分类号： G01T1/24

CPC分类号： H01L23/544 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  G03F7/2026 ,  G03F7/70341 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G21K5/10 ,  H01J2237/30438 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/949 ,  H01L2924/00

摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

摘要翻译： 一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯 区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

公开(公告)号：US07371434B2

公开(公告)日：2008-05-13

申请号：US10202657

申请日：2002-07-25

申请人： Shinichi Ito

发明人： Shinichi Ito

IPC分类号： B05D1/02

CPC分类号： G03F7/162

摘要： A method of forming a liquid film characterized by dropping a liquid on a substrate from a dropping unit while rotating the substrate, moving the dropping unit in the radial direction from the inner periphery of the substrate to the outer periphery of the substrate so that the move pitch of the dropping unit in the radial direction occurring in every revolution of the substrate may change slightly, and forming a liquid film on the substrate by adjusting the feed speed of the liquid to the substrate from the dropping unit, while lowering the rotational frequency of the substrate gradually, so that the liquid on the substrate may not move due to centrifugal force by rotation of the substrate, along with the move of the dropping unit in the radial direction of the substrate.

摘要翻译： 一种形成液膜的方法，其特征在于在旋转基板的同时从滴液单元将液体滴落到基板上，使滴下单元从基板的内周沿径向移动到基板的外周，使得移动 在基板的每一转中发生的放射单元的间距可能稍微变化，并且通过从下降单元调节液体对基板的进给速度而在基板上形成液膜，同时降低 使基板的液体随着基板的旋转的离心力而不会随着基板的径向移动而不能移动。

公开(公告)号：US07364839B2

公开(公告)日：2008-04-29

申请号：US10624593

申请日：2003-07-23

申请人： Kei Hayasaki ,  Shinichi Ito ,  Tomoyuki Takeishi ,  Kenji Kawano ,  Tatsuhiko Ema

发明人： Kei Hayasaki ,  Shinichi Ito ,  Tomoyuki Takeishi ,  Kenji Kawano ,  Tatsuhiko Ema

IPC分类号： G03F7/26

CPC分类号： G03F7/40

摘要： A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

摘要翻译： 图案形成方法包括在基板上形成感光性树脂膜，使感光性树脂膜曝光，通过向感光性树脂膜供给显影液而形成感光性树脂膜的图案，通过使感光性树脂膜变薄，从而除去图案的表面层 导致图案与活性水接触。

公开(公告)号：US20080063987A1

公开(公告)日：2008-03-13

申请号：US11898322

申请日：2007-09-11

申请人： Shinichi Ito

发明人： Shinichi Ito

IPC分类号： G03C5/00 ,  B08B3/02

CPC分类号： B08B3/04 ,  G03F7/70341 ,  G03F7/70925

摘要： An immersion supporting plate cleaning method of cleaning an immersion supporting plate provided around a substrate to be processed in immersion exposure. An immersion boundary between an immersion area contact part and an immersion area noncontact part on the immersion supporting plate formed when an immersion area is moved according to a predetermined exposure area and an exposure map is determined in advance. Then, the immersion supporting plate is cleaned while a cleaning jig is being moved along the determined immersion boundary.

摘要翻译： 一种浸没式支撑板清洁方法，其用于清洗浸没式支撑板，其设置在浸没曝光中待处理基板周围。 预先确定当浸入区域根据预定曝光区域和曝光图而移动时形成的浸没支撑板上的浸没区域接触部分和浸没区域非接触部分之间的浸没边界。 然后，在沿着确定的浸入边界移动清洁夹具的同时清洁浸没支撑板。

公开(公告)号：US07288466B2

公开(公告)日：2007-10-30

申请号：US10436972

申请日：2003-05-14

申请人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

发明人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

IPC分类号： H01L21/46

CPC分类号： H01L23/544 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  G03F7/2026 ,  G03F7/70341 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G21K5/10 ,  H01J2237/30438 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/949 ,  H01L2924/00

摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

摘要翻译： 一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯 区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

公开(公告)号：US20070190462A1

公开(公告)日：2007-08-16

申请号：US11654565

申请日：2007-01-18

申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

IPC分类号： G03F7/20

CPC分类号： G03F7/70341 ,  Y10S430/162

摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

公开(公告)号：US20060194155A1

公开(公告)日：2006-08-31

申请号：US11360502

申请日：2006-02-24

申请人： Daisuke Kawamura ,  Tsuyoshi Shibata ,  Shinichi Ito

发明人： Daisuke Kawamura ,  Tsuyoshi Shibata ,  Shinichi Ito

IPC分类号： G03F7/00

CPC分类号： G03F7/2022 ,  G03F7/2028 ,  G03F7/70341 ,  G03F7/7045

摘要： A resist pattern forming method includes forming a resist film above a substrate. A first exposure is performed in which a specific region of an edge of the resist film is irradiated with light much enough to allow subsequent development to dissolve the resist film, thereby forming a latent image in the resist film at the edge. The resist film whose edge has been irradiated is rinsed. A second exposure is performed in which a desired pattern of light is projected onto an exposure region of the rinsed resist film via a projection optical system of an immersion exposure tool with liquid whose refractive index is larger than that of air existing between the exposure region and the substrate-side face of a component element closest to the substrate in the projection optical system. Development on the exposure region of the resist film is performed.

摘要翻译： 抗蚀剂图案形成方法包括在基板上形成抗蚀剂膜。 进行第一曝光，其中抗蚀剂膜的边缘的特定区域被足够多的光照射以允许随后的显影以溶解抗蚀剂膜，从而在边缘处在抗蚀剂膜中形成潜像。 冲洗其边缘的抗蚀剂膜。 进行第二次曝光，其中期望的图案通过浸没曝光工具的投影光学系统投射到冲洗的抗蚀剂膜的曝光区域上，其中折射率大于曝光区域和 在投影光学系统中最靠近基板的元件元件的基板侧面。 进行抗蚀剂膜的曝光区域的显影。