公开(公告)号：US20090147520A1

公开(公告)日：2009-06-11

申请号：US12024963

申请日：2008-02-01

申请人： Jun Liu ,  Yong-Dong Chen ,  Shih-Hsun Wung

发明人： Jun Liu ,  Yong-Dong Chen ,  Shih-Hsun Wung

IPC分类号： F21V29/00 ,  H05K7/00

CPC分类号： F21V29/004 ,  F21K9/00 ,  F21V29/74 ,  F21V29/75 ,  F21V29/773 ,  F21V29/89 ,  F21Y2115/10 ,  H01L2924/0002 ,  Y10S362/80 ,  H01L2924/00

摘要： An LED lamp includes a post (10), a heat sink (20) enclosing the post, an LED module (30) mounted on the post, a holder (40) secured on the LED module, and a lens (50) covering the holder. The heat sink is formed by a plurality of separated fins assembled together. Each fin comprises an outer portion (22) and an inner portion (24). An inner edge of the outer portion abuts interferingly against a periphery of the post, and a bottom of the inner portion contacts a top surface of the post. Heat generated by the LED module is conducted through the post to the plurality of fins, which dissipate the heat to the ambient air.

摘要翻译： LED灯包括柱（10），封闭柱的散热器（20），安装在柱上的LED模块（30），固定在LED模块上的保持架（40）和覆盖 持有人 散热器由组装在一起的多个分开的翅片形成。 每个翅片包括外部部分（22）和内部部分（24）。 外部部分的内边缘干涉地抵靠柱的周边，并且内部的底部接触柱的顶表面。 由LED模块产生的热量通过柱体传导到多个翅片，其将热量散发到环境空气中。

公开(公告)号：US20090073741A1

公开(公告)日：2009-03-19

申请号：US11857647

申请日：2007-09-19

申请人： Jun Liu

发明人： Jun Liu

IPC分类号： G11C11/00 ,  H01L21/82 ,  H01L47/00

CPC分类号： H01L21/8239 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/24

摘要： A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells is in parallel with a corresponding series of control gates. A select gate is also in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell includes turning off the corresponding control gate, while turning on all other control gates. Devices include the variable-resistance material memory array.

摘要翻译： 可变电阻材料存储器阵列包括一系列可变电阻材料存储单元。 一系列可变电阻材料存储单元与对应的一系列控制栅极并联。 选择栅极也与可变电阻材料存储单元串联。 对给定的可变电阻材料存储单元的写入/读取/擦除包括在打开所有其他控制栅极的同时关闭相应的控制栅极。 器件包括可变电阻材料存储器阵列。

公开(公告)号：US20090034897A1

公开(公告)日：2009-02-05

申请号：US11817725

申请日：2006-03-02

申请人： Jun Liu ,  Ryosuke Yamada ,  Kouji Kobayashi ,  Azusa Otani

发明人： Jun Liu ,  Ryosuke Yamada ,  Kouji Kobayashi ,  Azusa Otani

IPC分类号： F16C33/54

CPC分类号： F16C33/546 ,  F16C19/30 ,  F16C33/541 ,  F16C2240/40

摘要： A diameter dimension of a chamfer 11 which is formed on axial end faces of a cylindrical roller 8 which is retained in each pocket 7 of a cage 2 whose axial positioning is realized by a roller guide at a portion which lies closer to an outside diameter side thereof is made such that a central flat surface 9 which lies on an inside diameter side of the chamfer 11 is not exposed from an external surface of an outside diameter side flat plate portion 14. Then, a difference between a minimum value ΔB of an amount by which the cylindrical roller 8 projects from the external surface of the outside diameter side flat plate portion 14 and a dimension W11 of the chamfer 11 with respect to a diameter direction thereof is made smaller than a thickness T2 of the cage 2.

摘要翻译： 形成在圆柱滚子8的轴向端面上的倒角11的直径尺寸，圆柱滚子8保持在保持架2的每个凹部7中，轴承定位通过滚子引导件在靠近外径侧的部分 使得位于倒角11的内径侧的中央平面9不从外径侧平板部14的外表面露出。然后，将最小值DeltaB与量 圆柱滚子8从外径侧平板部14的外表面伸出，倒角11相对于其直径方向的尺寸W11小于保持架2的厚度T2。

公开(公告)号：US07439055B1

公开(公告)日：2008-10-21

申请号：US11120935

申请日：2005-05-03

申请人： Qisheng Huo ,  Jun Liu

发明人： Qisheng Huo ,  Jun Liu

IPC分类号： C12M3/00 ,  G01N33/53 ,  G01N27/00 ,  C12Q1/68

CPC分类号： G01N33/5438

摘要： A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

摘要翻译： 一种用于检测和测量溶液中生物分子浓度的装置，利用与包含目标生物分子的溶液接触的导电电极，并将具有可控的孔径分布特性的膜应用于导电电极的至少一个表面。 该膜通过与膜表面上的目标生物分子化学相互作用的探针分子进行功能化，阻止溶液中存在的指示剂分子从溶液扩散到电极，从而改变电极的电化学响应。

公开(公告)号：US20080186795A1

公开(公告)日：2008-08-07

申请号：US11938196

申请日：2007-11-09

申请人： Yolin Lih ,  Ajay Bhatia ,  Dennis Wendell ,  Jun Liu ,  Daniel Fung ,  Shyam Balasubramanian

发明人： Yolin Lih ,  Ajay Bhatia ,  Dennis Wendell ,  Jun Liu ,  Daniel Fung ,  Shyam Balasubramanian

IPC分类号： G11C5/14

CPC分类号： G11C11/419 ,  G11C5/147 ,  G11C11/417

摘要： An elastic power header device and methods of operation are provided to improve the read margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin can be more conveniently controlled.

摘要翻译： 提供了一种弹性功率头装置和操作方法，通过增加读取稳定性，减少读取干扰和提高信噪比（SNM）品质因数，提高静态随机存取存储器（SRAM）单元的读取余量。 例如，弹性功率头装置的各种实现被用作可编程电阻以允许电源线达到最大电压。 允许电源线达到参考电压可以提高读取余量和读取稳定性的灵活性。 此外，这种额外的灵活性可以通过调节电压的手段来控制。 该调整电压可以微调可编程电阻，从而可以更方便地控制读取余量。

公开(公告)号：US20080186791A1

公开(公告)日：2008-08-07

申请号：US11932967

申请日：2007-10-31

申请人： Yolin Lih ,  Ajay Bhatia ,  Dennis Wendell ,  Jun Liu ,  Daniel Fung ,  Shyam Balasubramanian

发明人： Yolin Lih ,  Ajay Bhatia ,  Dennis Wendell ,  Jun Liu ,  Daniel Fung ,  Shyam Balasubramanian

IPC分类号： G11C5/14

CPC分类号： G11C11/419 ,  G11C5/147 ,  G11C11/417

摘要： An elastic power header device and methods of operation are provided to improve both the read and the write margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin, write margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin and the write margin can be more conveniently controlled.

摘要翻译： 提供了一种弹性功率头装置和操作方法，通过提高读取稳定性，减少读取干扰并提高信噪比（SNM）品质因数，提高静态随机存取存储器（SRAM）单元的读取和写入余量 。 例如，弹性功率头装置的各种实现被用作可编程电阻以允许电源线达到最大电压。 允许电源线达到参考电压可以提高读取余量，写入余量和读取稳定性的灵活性。 此外，这种额外的灵活性可以通过调节电压的手段来控制。 该调整电压可以微调可编程电阻，从而可以更方便地控制读取余量和写入裕度。

公开(公告)号：US20080093589A1

公开(公告)日：2008-04-24

申请号：US11643688

申请日：2006-12-22

申请人： Jun Liu ,  Terry Gilton ,  John Moore ,  Kristy Campbell

发明人： Jun Liu ,  Terry Gilton ,  John Moore ,  Kristy Campbell

IPC分类号： H01L29/04

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/16

摘要： A memory element having a first electrode is provided, wherein the first electrode comprises at least one conductive nanostructure. The memory element further includes a second electrode and a resistance variable material layer between the first and second electrodes. The first electrode electrically is coupled to the resistance variable material. Methods for forming the memory element are also provided.

摘要翻译： 提供了具有第一电极的存储元件，其中第一电极包括至少一个导电纳米结构。 存储元件还包括在第一和第二电极之间的第二电极和电阻可变材料层。 第一电极电耦合到电阻可变材料。 还提供了形成存储元件的方法。

公开(公告)号：US07361603B2

公开(公告)日：2008-04-22

申请号：US11117274

申请日：2005-04-28

申请人： Jun Liu ,  Mackenzie King ,  Michael Darsillo ,  Karl E. Boggs ,  Jeffrey F. Roeder ,  Thomas H. Baum

发明人： Jun Liu ,  Mackenzie King ,  Michael Darsillo ,  Karl E. Boggs ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  C23F11/141 ,  H01L21/3212

摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

摘要翻译： 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂的组合以及使用方法。 在CMP抛光期间可以稀释这种CMP组合物，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中以及在CMP期间的铜/ CMP组成界面处存在大量水平的铜离子 处理。

公开(公告)号：US20080037317A1

公开(公告)日：2008-02-14

申请号：US11501598

申请日：2006-08-09

申请人： Jun Liu ,  Glen Hush ,  Mike Violette ,  Mark Ingram

发明人： Jun Liu ,  Glen Hush ,  Mike Violette ,  Mark Ingram

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0004 ,  G11C13/004 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79

摘要： A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.

公开(公告)号：US07300601B2

公开(公告)日：2007-11-27

申请号：US10315641

申请日：2002-12-10

申请人： Jun Liu ,  Peter Wrschka ,  David Bernhard ,  MacKenzie King ,  Michael Darsillo ,  Karl Boggs

发明人： Jun Liu ,  Peter Wrschka ,  David Bernhard ,  MacKenzie King ,  Michael Darsillo ,  Karl Boggs

IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302

CPC分类号： C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  C23F11/141 ,  H01L21/3212

摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

摘要翻译： 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂组合。 这样的CMP组合物有利地没有BTA，并且可用于抛光半导体衬底上的铜元素的表面，即使在存在大量铜离子的情况下也不会发生抛光铜的凹陷或其它不利平面化缺陷，例如， 在CMP处理期间在铜/ CMP组合物界面处的本体CMP组合物中的Cu 2+ 2 +。