利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

151 条记录 (耗时 0.046 秒)

    Image forming apparatus
    91.
    发明申请
    Image forming apparatus 有权
    图像形成装置

    公开(公告)号：US20070165065A1

    公开(公告)日：2007-07-19

    申请号：US10587612

    申请日：2005-12-01

    申请人： Tomohiro Tamai ,  Tetsuya Kaneko

    发明人： Tomohiro Tamai ,  Tetsuya Kaneko

    IPC分类号： B41J2/165

    CPC分类号： B41J2/17509 ,  B41J2/16523 ,  B41J2/185 ,  B41J29/38

    摘要： An image forming apparatus for forming an image on a recording medium by ejecting drops of recording fluid from a recording head includes a waste tank having a space for containing waste fluid, a part for obtaining a correlation value that has a correlation to a deposited state of the waste fluid in the space within the waste tank, and a part for judging whether or not the correlation value exceeds a reference value.

    摘要翻译： 一种用于通过从记录头喷射记录液的液滴而在记录介质上形成图像的图像形成装置包括具有用于容纳废液的空间的废液箱，用于获得与沉积状态相关的相关值的部分 废液箱内的废液，以及判断相关值是否超过基准值的部分。

    Image-forming device
    92.
    发明授权
    Image-forming device 失效
    图像形成装置

    公开(公告)号：US07230589B2

    公开(公告)日：2007-06-12

    申请号：US10756452

    申请日：2004-01-14

    申请人： Ichiro Nomura ,  Hidetoshi Suzuki ,  Tetsuya Kaneko ,  Shinya Mishina ,  Naoto Nakamura

    发明人： Ichiro Nomura ,  Hidetoshi Suzuki ,  Tetsuya Kaneko ,  Shinya Mishina ,  Naoto Nakamura

    IPC分类号： G09G3/22

    CPC分类号： G09G3/22 ,  G09G2300/0426 ,  H01J1/316 ,  H01J29/028 ,  H01J29/864 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8655

    摘要： An image-forming device having, in an envelope, an electron-emitting element, an image-forming member for forming an image by irradiation of an electron beam emitted from the electron-emitting element, and an electroconductive supporting member for supporting the envelope. The potential of the supporting member is controlled to not be higher than the maximum potential applied to the electron-emitting element. The electron-emitting element and the image-forming member can be placed in juxtaposition on the same substrate, an electro-conductive substrate can be additionally provided in opposition to the face of the substrate, and the supporting member can be connected electrically to one of the electrodes and also to the electro-conductive substrate.

    摘要翻译： 一种图像形成装置，在外壳中具有电子发射元件，用于通过照射从电子发射元件发射的电子束形成图像的图像形成部件和用于支撑外壳的导电支撑部件。 支撑构件的电位被控制为不高于施加到电子发射元件的最大电位。 电子发射元件和图像形成部件可以并置在同一基板上，可以相对于基板的表面另外设置导电基板，并且支撑部件可以电连接到 电极以及导电性基板。

    METHOD AND APPARATUS FOR MANUFACTURING IMAGE DISPLAYING APPARATUS
    93.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING IMAGE DISPLAYING APPARATUS 失效
    用于制造图像显示装置的方法和装置

    公开(公告)号：US20070111629A1

    公开(公告)日：2007-05-17

    申请号：US11620819

    申请日：2007-01-08

    申请人： Toshihiko Miyazaki ,  Kohei Nakata ,  Tetsuya Kaneko

    发明人： Toshihiko Miyazaki ,  Kohei Nakata ,  Tetsuya Kaneko

    IPC分类号： H01J9/46 ,  H01J9/38

    CPC分类号： H01J9/46 ,  H01J9/18 ,  H01J9/38 ,  H01J9/48 ,  H01J2329/00

    摘要： A method and an apparatus for manufacturing an image displaying apparatus having a display panel. A first substrate of the display panel on which a phosphor exciter is disposed and a second substrate of the display panel on which phosphors emitting light by the phosphor exciter is provided, are prepared under a vacuum atmosphere. Then, the first and the second substrates are carried in a getter processing chamber or bake processing chamber, and getter processing or bake processing is applied thereto under the vacuum atmosphere. After the processing, the first and the second substrates are carried in a seal processing chamber, where the substrates are heat sealed under the vacuum atmosphere. Thus, reduction of vacuum exhaust time and a high vacuum degree in manufacturing an image displaying apparatus is attained and efficiency of manufacturing is improved.

    摘要翻译： 一种用于制造具有显示面板的图像显示装置的方法和装置。 在真空气氛下制备其上设置有荧光体激发器的显示面板的第一基板和设置有由荧光体激发器发光的荧光体的显示面板的第二基板。 然后，将第一和第二基板载带在吸气处理室或烘烤处理室中，并在真空环境下对其进行吸气处理或烘烤处理。 在处理之后，第一和第二基板被携带在密封处理室中，其中基板在真空气氛下被热密封。 因此，在制造图像显示装置中实现真空排气时间的减少和真空度的提高，并且提高了制造效率。

    Semiconductor device and manufacturing method thereof
    96.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US06498376B1

    公开(公告)日：2002-12-24

    申请号：US08459831

    申请日：1995-06-02

    申请人： Masanori Miyagi ,  Haruo Konishi ,  Kazuaki Kubo ,  Yoshikazu Kojima ,  Toru Shimizu ,  Yutaka Saitoh ,  Toru Machida ,  Tetsuya Kaneko

    发明人： Masanori Miyagi ,  Haruo Konishi ,  Kazuaki Kubo ,  Yoshikazu Kojima ,  Toru Shimizu ,  Yutaka Saitoh ,  Toru Machida ,  Tetsuya Kaneko

    IPC分类号： H01L2976

    CPC分类号： H01L29/78696 ,  H01L21/3226 ,  H01L21/823462 ,  H01L27/0705 ,  H01L29/1041 ,  H01L29/1045 ,  H01L29/66757

    摘要： A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.

    摘要翻译： MISFET设置有分段通道，该分段通道包括其中通道被第一栅极电压反相的区域和通道以第二栅极电压反相的区域。 MISFET形成在具有第一导电类型的半导体衬底中，沟道的第一反相区域具有由衬底的表面浓度确定的第一杂质浓度。 通道的第二反转区域具有通过将杂质掺杂到通过光刻工艺选择的区域而确定的第二杂质浓度。 第一反转区域和第二反转区域可以被划分成多个平面形状，并且根据第一和第二反转区域的平面面积比将MISFET的阈值电压设置为期望值。

    Semiconductor integrated circuit including a boosted potential generating circuit
    99.
    发明授权
    Semiconductor integrated circuit including a boosted potential generating circuit 失效
    包括升压电位发生电路的半导体集成电路

    公开(公告)号：US6137345A

    公开(公告)日：2000-10-24

    申请号：US652935

    申请日：1996-05-24

    申请人： Tetsuya Kaneko ,  Takashi Ohsawa

    发明人： Tetsuya Kaneko ,  Takashi Ohsawa

    IPC分类号： G11C11/413 ,  G11C5/14 ,  G11C11/406 ,  G11C11/407 ,  G11C11/408 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  G05F1/10

    CPC分类号： G11C11/4085 ,  G11C5/145

    摘要： A semiconductor integrated circuit includes a boosted potential circuit for generating a boosted potential and outputting the boosted potential at an output terminal thereof. The boosted potential generating circuit bas a variable current supply capability while the boosted potential is output. A load circuit is supplied with the boosted potential and has a load which varies based a specification signal for setting a specification of the semiconductor integrated circuit. Control circuitry, responsive to the verification signal, generates a control signal to set a current supply capability of the boosted potential generating circuit.

    摘要翻译： 半导体集成电路包括用于产生升压电位并在其输出端输出升压电位的升压电位电路。 升压电位产生电路基于可变电流供应能力，同时输出升压电位。 负载电路被提供有升压电位，并且具有根据用于设定半导体集成电路的规格的规格信号而变化的负载。 响应于验证信号的控制电路产生控制信号以设置升压电位产生电路的电流供应能力。