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    Phase change memory stack with treated sidewalls
    93.
    发明授权
    Phase change memory stack with treated sidewalls 有权
    具有处理侧壁的相变存储器堆叠

    公开(公告)号：US09306159B2

    公开(公告)日：2016-04-05

    申请号：US14266415

    申请日：2014-04-30

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC: H01L47/00 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

    Abstract translation: 已经公开了用于制造存储器件的存储器件和方法。 一种这样的方法包括从多个元件形成存储器堆叠。 在存储器堆叠的至少一个侧壁上形成粘附物质，其中粘附物质具有梯度结构，其导致粘附物质与存储器堆叠的元件混合以终止元件的不满足的原子键。 梯度结构还包括在至少一个侧壁的外表面上的粘附物质的膜。 将电介质材料注入到粘附物质的膜中以形成侧壁衬里。

    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    94.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 有权
    相位变化的存储堆栈与处理的SIDEWALLS

    公开(公告)号：US20150318467A1

    公开(公告)日：2015-11-05

    申请号：US14266365

    申请日：2014-04-30

    Applicant: Micron Technology, Inc.

    Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    Abstract translation: 已经公开了用于制造存储器件的存储器件和方法。 一种这样的存储器件包括形成在字线材料上的第一电极材料。 在第一电极材料上形成选择器装置材料。 第二电极材料形成在选择器装置材料上。 在第二电极材料上形成相变材料。 在相变材料上形成第三电极材料。 粘附物质是等离子体掺杂到存储器堆叠的侧壁中，并且衬垫材料形成在存储器堆叠的侧壁上。 粘附物质与存储器堆叠和侧壁衬套的元件混合以终止元件和侧壁衬套的不满足的原子键。

    Memory Cells and Methods of Forming Memory Cells
    96.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20150179936A1

    公开(公告)日：2015-06-25

    申请号：US14618936

    申请日：2015-02-10

    Applicant: Micron Technology, Inc.

    Inventor： Martin Schubert ,  Shu Qin ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Allen McTeer ,  Yongjun Jeff Hu

    IPC: H01L45/00

    CPC classification number: H01L45/1608 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/146 ,  H01L45/16

    Abstract: Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.

    Abstract translation: 一些实施例包括具有第一电极的存储器单元，以及在第一电极之上并直接抵靠第一电极的中间材料。 中间材料包括对应于碳和硼之一或两者的稳定物质。 存储单元还具有超过并直接抵靠中间材料的开关材料，开关材料上方的离子储存器材料以及离子储存器材料上的第二电极。 一些实施例包括形成存储器单元的方法。

    Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    99.
    发明申请
    Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20220068959A1

    公开(公告)日：2022-03-03

    申请号：US17068430

    申请日：2020-10-12

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Billingsley ,  Jordan D. Greenlee ,  John D. Hopkins ,  Yongjun Jeff Hu ,  Swapnil Lengade

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/311

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b). Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-first-tier or said lower upper-first-tier. After the stop, the sacrificial material is removed from the lower channel openings and form channel-material strings in the upper and lower channel openings. Other embodiments, including structure independent of method, are disclosed.

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