公开(公告)号：US20050231784A1

公开(公告)日：2005-10-20

申请号：US11073862

申请日：2005-03-08

申请人： Ryuji Shinohara ,  Hideki Kaneiwa ,  Atsushi Matsunaga ,  Kiyoshi Morimoto

发明人： Ryuji Shinohara ,  Hideki Kaneiwa ,  Atsushi Matsunaga ,  Kiyoshi Morimoto

IPC分类号： G02F1/15 ,  G02F1/157

CPC分类号： G02F1/1523 ,  B82Y20/00 ,  G02F1/1521 ,  G02F1/157 ,  G02F2202/10 ,  G02F2202/36

摘要： An electrochromic element wherein, in a colored state of the electrochromic element, a first average optical density in a first wavelength range of 450 to 470 nm, a second average optical density in a second wavelength range of 540 to 560 nm and a third average optical density in a third wavelength range of 630 to 650 nm have a fluctuation (difference of a maximum value and a minimum value of the first to third average optical densities) equal to or less than 0.5.

摘要翻译： 一种电致变色元件，其中在电致变色元件的着色状态下，在450至470nm的第一波长范围内具有第一平均光密度，在540至560nm的第二波长范围内的第二平均光密度和第三平均光学 在630nm至650nm的第三波长范围内的密度具有等于或小于0.5的波动（第一至第三平均光密度的最大值和最小值的差）。

公开(公告)号：US06933570B2

公开(公告)日：2005-08-23

申请号：US10696347

申请日：2003-10-28

申请人： Kiyoshi Morimoto ,  Kiyoyuki Morita

发明人： Kiyoshi Morimoto ,  Kiyoyuki Morita

IPC分类号： H01L23/58 ,  H01L27/06 ,  H01M4/86 ,  H01M4/88 ,  H01M8/10 ,  H01L27/01

CPC分类号： H01L23/58 ,  H01L27/0688 ,  H01L2924/0002 ,  H01M4/8605 ,  H01M8/02 ,  H01M8/0258 ,  H01M8/1007 ,  H01M8/241 ,  Y02P70/56 ,  H01L2924/00

摘要： A semiconductor device equipped with a fuel cell of the present invention includes a fuel cell and a semiconductor element, and the fuel cell includes an anode separator in which a flow channel for fuel is formed, a cathode separator in which a flow channel for oxidizer is formed, and a membrane electrode assembly interposed between the anode separator and the cathode separator. In the semiconductor device, the semiconductor element is formed on one of the principal surfaces of one separator selected from the anode separator and the cathode separator, and the semiconductor element and the selected separator are connected electrically. With this configuration of the semiconductor device equipped with a fuel cell, a more compact and versatile semiconductor device equipped with a fuel cell is provided.

摘要翻译： 配备有本发明的燃料电池的半导体装置包括燃料电池和半导体元件，燃料电池包括其中形成有燃料流路的阳极分离器，其中氧化剂流路为 以及插入在阳极分离器和阴极分离器之间的膜电极组件。 在半导体器件中，半导体元件形成在从阳极隔板和阴极隔板中选择的一个隔板的一个主表面上，并且半导体元件和选定的隔板被电连接。 通过配备有燃料电池的该半导体装置的结构，提供了配备有燃料电池的更紧凑且多功能的半导体装置。

公开(公告)号：US20050121659A1

公开(公告)日：2005-06-09

申请号：US11038034

申请日：2005-01-21

申请人： Hideyuki Tanaka ,  Kiyoshi Morimoto

发明人： Hideyuki Tanaka ,  Kiyoshi Morimoto

IPC分类号： G11B9/00 ,  G11B9/04 ,  G11C11/22 ,  G11C16/02 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00 ,  H01L27/108 ,  H01L29/76

CPC分类号： G11C13/0004 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1463 ,  G11B9/149 ,  G11C11/22 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16

摘要： A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.

摘要翻译： 一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。 其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。 其中记录层（12）形成在其上形成无机介电层的一侧。 使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

公开(公告)号：US06900517B2

公开(公告)日：2005-05-31

申请号：US10646816

申请日：2003-08-25

申请人： Hideyuki Tanaka ,  Kiyoshi Morimoto

发明人： Hideyuki Tanaka ,  Kiyoshi Morimoto

IPC分类号： G11B9/00 ,  G11B9/04 ,  G11C11/22 ,  G11C16/02 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00 ,  H01L29/00

CPC分类号： G11C13/0004 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1463 ,  G11B9/149 ,  G11C11/22 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16

摘要： A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.

摘要翻译： 一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。 其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。 其中记录层（12）形成在其上形成无机介电层的一侧。 使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

公开(公告)号：US20050058445A1

公开(公告)日：2005-03-17

申请号：US10941005

申请日：2004-09-15

申请人： Hideki Kaneiwa ,  Ryuji Shinohara ,  Atsushi Matsunaga ,  Kiyoshi Morimoto

发明人： Hideki Kaneiwa ,  Ryuji Shinohara ,  Atsushi Matsunaga ,  Kiyoshi Morimoto

IPC分类号： G02B5/00 ,  G02F1/15 ,  G02F1/155 ,  G03B7/095 ,  G03B9/02 ,  G03B15/05 ,  G03B17/04 ,  H01L31/04

CPC分类号： G03B7/095 ,  B82Y20/00 ,  G02F1/1508 ,  G02F1/1521 ,  G02F1/155 ,  G02F2001/13324 ,  G02F2202/36 ,  G03B9/02 ,  G03B15/05 ,  G03B17/04 ,  G03B2215/0503 ,  G03B2215/0507

摘要： To provide an optical density-changing element which has excellent properties that it can be brought into a colored state by applying only a low voltage, that it shows a rapid response speed and becomes completely colorless when restored to a bleached state from the colored state, and which can undergo a change in optical density in response to an applied voltage, the optical density-changing element includes, on each of an anode and a cathode, a material capable of at least one of donating and accepting an electron and, as a result of at least one of donating and accepting the electron, undergoing a change in absorption spectrum in a visible region and a material undergoing substantially no change in absorption spectrum in the visible region, with potentials of these materials satisfying a specific relation defined in the specification.

摘要翻译： 为了提供具有优异性能的光密度变化元件，其通过仅施加低电压可以变成着色状态，当从着色状态恢复到漂白状态时，显示出快速的响应速度并变得完全无色， 并且其可以响应于施加的电压而经历光密度的变化，所述光学密度变化元件在阳极和阴极的每一个上包括能够提供和接受电子的至少一种的材料，并且作为 至少一种供给和接受电子的结果，在可见光区域中吸收光谱发生变化，并且在可见光区域中吸收光谱基本上没有变化的材料，这些材料的电位满足规范中定义的特定关系 。

公开(公告)号：US06740928B2

公开(公告)日：2004-05-25

申请号：US10350140

申请日：2003-01-24

申请人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

发明人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

IPC分类号： H01L29788

CPC分类号： B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  G11C16/0408 ,  G11C16/0466 ,  G11C2216/06 ,  H01L29/42332 ,  H01L29/7883

摘要： The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

摘要翻译： 本发明的半导体器件包括：通过阻挡层使用于在p型硅衬底上形成的电荷的粒子或界面状态; 以及通过另一个阻挡层形成在电荷通过颗粒上方形成的电荷的颗粒。 电荷保持粒子与粒径，电容，电子亲和力，电子亲和力和禁带宽度之和等参数不同于充电粒子，以获得快速的电荷注入和释放以及稳定的电荷 保持在电荷保持颗粒中。

公开(公告)号：US06610466B2

公开(公告)日：2003-08-26

申请号：US09939843

申请日：2001-08-28

申请人： Masami Sakurada ,  Kiyoshi Morimoto ,  Fumitaka Ueda ,  Toru Yamada

发明人： Masami Sakurada ,  Kiyoshi Morimoto ,  Fumitaka Ueda ,  Toru Yamada

IPC分类号： G03C146

CPC分类号： G03C7/3041 ,  G03C1/12 ,  G03C1/16 ,  G03C1/18 ,  G03C1/22 ,  G03C1/38 ,  G03C7/3022 ,  G03C7/3029 ,  G03C7/388 ,  G03C7/3885

摘要： A silver halide photographic lightsensitive material comprising at least one silver halide photographic emulsion layer containing a silver halide photographic emulsion prepared by mixing a dispersion of silver halide grains, the silver halide grains exhibiting such spectral absorption maximum wavelength and light absorption intensity that, when the spectral absorption maximum wavelength is less than 500 nm, the light absorption intensity is 60 or more, while when the spectral absorption maximum wavelength is 500 nm or more, the light absorption intensity is 100 or more, with an emulsified dispersion, wherein the silver halide photographic emulsion, when agitated at 40° C. for 30 min, exhibits a variation of absorption spectrum integrated intensity ranging from 400 nm to 700 nm of 10% or less.

公开(公告)号：US06582895B2

公开(公告)日：2003-06-24

申请号：US09773689

申请日：2001-02-02

申请人： Naoyuki Hanaki ,  Takanori Hioki ,  Kiyoshi Morimoto

发明人： Naoyuki Hanaki ,  Takanori Hioki ,  Kiyoshi Morimoto

IPC分类号： G03C1005

CPC分类号： G03C1/005 ,  G03C1/10 ,  G03C1/14 ,  G03C1/16

摘要： A silver halide photographic emulsion which comprises at least one methine compound represented by the following formula (I): wherein X1 and X2 each represents an oxygen atom, a sulfur atom, a selenium atom, or N—R3, wherein R3 represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a heterocyclic group; V1 and V2 each represents a monovalent substituent; n1 and n2 each represents 0, 1, 2, 3 or 4; L1, L2 and L3 each represents a methine group; l represents an integer of 0 to 3; M represents a counter ion for balancing electric charge; m represents a necessary number for balancing electric charge; and R1 and R2 each represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group, but at least either R1 or R2 represents the alkyl group represented by any of the following formulae: Ra=(Qa)rCO{overscore (N)}SO2Raa Rb=(Qb)sSO2{overscore (N)}CORbb Rc=(Qc)tCO{overscore (N)}CORcc Rd=(Qd)uSO2{overscore (N)}SO2Rdd Re=(Qe)vX wherein Raa, Rbb, Rcc and Rdd each represents an alkyl group, an aryl group, a heterocyclic group, an alkoxyl group, an aryloxy group, a heterocyclyloxy group, or an amino group; Qa, Qb, Qc, Qd and Qe each represents a divalent linking group; X represents SO3−, CO2−, or PO32−; and r, s, t, u and v each represents an integer of 1 or more, but when X represents SO3−, v represents 1 or 2.

摘要翻译： 一种卤化银照相乳剂，其包含由下式（I）表示的至少一种次甲基化合物：其中X 1和X 2各自表示氧原子，硫原子，硒原子或N-R 3，其中R 3表示氢原子 取代或未取代的烷基，取代或未取代的芳基或杂环基; V1和V2各自表示一价取代基; n1和n2各自表示0,1,2,3或4; L1，L2和L3各自表示次甲基; l表示0〜3的整数， M表示用于平衡电荷的抗衡离子; m表示用于平衡电荷的必要数量; 并且R 1和R 2各自表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基，但R 1或R 2中的至少一个表示由下式表示的烷基：其中Raa，Rbb Rcc和Rdd各自表示烷基，芳基，杂环基，烷氧基，芳氧基，杂环氧基或氨基; Qa，Qb，Qc，Qd和Qe各自表示二价连接基团; X代表SO3-，CO2-或PO32-; 并且r，s，t，u和v各自表示1以上的整数，但当X表示SO 3 - 时，v表示1或2。

公开(公告)号：US06548825B1

公开(公告)日：2003-04-15

申请号：US09587268

申请日：2000-06-05

申请人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

发明人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

IPC分类号： H01L310328

CPC分类号： B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  G11C16/0408 ,  G11C16/0466 ,  G11C2216/06 ,  H01L29/42332 ,  H01L29/7883

摘要： The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

摘要翻译： 本发明的半导体器件包括：通过阻挡层使用于在p型硅衬底上形成的电荷的粒子或界面状态; 以及通过另一个阻挡层形成在电荷通过颗粒上方形成的电荷的颗粒。 电荷保持粒子与粒径，电容，电子亲和力，电子亲和力和禁带宽度之和等参数不同于充电粒子，以获得快速的电荷注入和释放以及稳定的电荷 保持在电荷保持颗粒中。

公开(公告)号：US6091077A

公开(公告)日：2000-07-18

申请号：US955267

申请日：1997-10-21

申请人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

发明人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

IPC分类号： H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/88 ,  H01L29/06

CPC分类号： H01L21/76264 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/7606 ,  H01L29/882 ,  H01L21/76267 ,  H01L21/76281

摘要： The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.

摘要翻译： 本发明提供一种半导体器件，其具有各种功能，例如双稳态存储器和逻辑电路，其中在公共衬底上形成有MOS半导体元件，谐振隧道二极管，热电子晶体管等。 在SOI衬底上形成由隔离氧化膜包围的n型Si层和p型Si层。 形成掩模氧化膜和栅极氧化膜，并且通过使用掩模氧化膜作为掩模对n型Si层进行结晶各向异性蚀刻，以将n型Si层改变为 薄Si板。 在该n型Si层的侧面上形成第一和第二隧道氧化物膜之后，共用隧道二极管的第一和第二多晶硅电极和用作MOS半导体元件的栅电极的多晶硅电极由共同的 多晶硅膜。 因此，可以容易地以低成本制造Si / SiO 2型量子器件。