公开(公告)号：US08102049B2

公开(公告)日：2012-01-24

申请号：US11842973

申请日：2007-08-22

申请人： Nobuaki Takahashi ,  Masahiro Komuro ,  Koji Soejima ,  Satoshi Matsui ,  Masaya Kawano

发明人： Nobuaki Takahashi ,  Masahiro Komuro ,  Koji Soejima ,  Satoshi Matsui ,  Masaya Kawano

IPC分类号： H01L23/52

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/06181 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.

摘要翻译： 本发明提供一种半导体器件，其包括绝缘层和各自包括形成在其中的孔的半导体层中的至少一个，以及设置在孔中的通孔。 在半导体装置中，孔的侧壁由从孔的开口到孔的开口部与孔的底面之间的规定位置的第一区域和从规定位置到第二区域 孔的底面。 通孔包括种子层和镀层。 种子层覆盖孔的第二区域和底部表面而不覆盖第一区域。 此外，电镀层覆盖种子层和第一区域的至少一部分。

公开(公告)号：US20120011841A1

公开(公告)日：2012-01-19

申请号：US13256526

申请日：2009-05-13

申请人： Yusuke Ogata ,  Koichi Tanaka ,  Nobuaki Takahashi ,  Kenji Matsuo ,  Naofumi Nishida

发明人： Yusuke Ogata ,  Koichi Tanaka ,  Nobuaki Takahashi ,  Kenji Matsuo ,  Naofumi Nishida

IPC分类号： F16D31/02

CPC分类号： F16H61/0031 ,  F16H61/0206 ,  F16H61/66259 ,  F16H2061/66286

摘要： A hydraulic device includes a switch-over valve 1140 provided at a section of a sub-passage 1105 located downstream of a location where a first bypass passage 1117 is connected and located upstream of a primary regulator 1110. The switch-over valve 1140 is switched between a blocked state, where supply of hydraulic oil to a section of the sub-passage 1105 located downstream of the switch-over valve 1140 is blocked, and a communication state, where supply of hydraulic oil to the section of the sub-passage 1105 located downstream of the switch-over valve 1140 is permitted. In the hydraulic device, when the switch-over valve 1140 is switched to the communication state, as a discharge performance of a main pump 1102 increases, a first check valve 1118 closes. Supply paths for hydraulic oil discharged from the sub-pump 1103 are automatically switched in accordance with the discharge performance of the main pump 1102. When the switch-over valve 1140 is switched to the blocked state, the first check valve 1118 opens and hydraulic oil discharged from the sub-pump 1103 is introduced into a main passage 1104.

摘要翻译： 液压装置包括设置在位于第一旁通通道1117连接并位于主调节器1110的上游的位置下游的子通道1105的部分处的切换阀1140.切换阀1140被切换 在向位于切换阀1140下游的子通道1105的一部分供应液压油的堵塞状态之间，以及连通状态，其中向子通道1105的部分供应液压油 位于切换阀1140的下游。 在液压装置中，当切换阀1140切换到通信状态时，随着主泵1102的排出性能的增加，第一止回阀1118关闭。 从副泵1103排出的液压油的供给路径根据主泵1102的排出性能自动切换。当切换阀1140切换到阻塞状态时，第一止回阀1118打开，液压油 从副泵1103排出的空气被引入主通路1104。

公开(公告)号：US20110315972A1

公开(公告)日：2011-12-29

申请号：US13254886

申请日：2010-03-03

申请人： Nobuaki Takahashi ,  Hiroaki Yamagishi

发明人： Nobuaki Takahashi ,  Hiroaki Yamagishi

IPC分类号： H01L51/00 ,  H01L51/56

CPC分类号： H01L51/5256 ,  H01L51/0059 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/0088 ,  H01L51/0097 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention provides an organic electronic element manufacturing method which provides a low manufacturing cost and excellent performance stability, and specifically an organic electronic element manufacturing method which provides a low manufacturing cost, and minimizes emission unevenness, lowering of emission efficiency and shortening of lifetime due to deterioration of as barrier property of sealing. The organic electronic element manufacturing method is featured in that it comprises the steps of forming an organic electronic structure composed of a first electrode, at least one organic layer and a second electrode on a flexible substrate, and applying a flexible sealing substrate to the organic electronic structure, followed by heating treatment, wherein a heating temperature, at which the heating treatment is carried out, is less than Tg (a glass transition temperature) of the substrate and not less than Tg of the sealing substrate.

摘要翻译： 本发明提供了一种提供低制造成本和优异的性能稳定性的有机电子元件制造方法，特别是提供低制造成本的有机电子元件制造方法，并且最小化发射不均匀性，降低发光效率和缩短寿命 作为密封阻隔性的劣化。 有机电子元件制造方法的特征在于，其包括以下步骤：在柔性基板上形成由第一电极，至少一个有机层和第二电极组成的有机电子结构，以及将柔性密封基板施加到有机电子 结构，然后进行加热处理，其中进行加热处理的加热温度小于基板的Tg（玻璃化转变温度），并且不小于密封基板的Tg。

公开(公告)号：US20110292103A1

公开(公告)日：2011-12-01

申请号：US13118832

申请日：2011-05-31

申请人： Takashi Hatakeyama ,  Atsushi Kubota ,  Nobuaki Takahashi

发明人： Takashi Hatakeyama ,  Atsushi Kubota ,  Nobuaki Takahashi

IPC分类号： B41J29/38

CPC分类号： B41J11/0015

摘要： According to one embodiment, an inkjet image forming apparatus includes an inkjet head configured to discharge water-based ink and form an image on a surface of a recording medium, a medium conveyance part configured to convey the recording medium, a solution imparting part that is disposed upstream of the inkjet head in a recording medium conveyance direction and uses another inkjet head to impart a solution to the surface of the recording medium on which the image is formed, and a controller configured to calculate an imparting amount of the solution to be imparted to the recording medium and control an imparting operation to the recording medium.

摘要翻译： 根据一个实施例，喷墨图像形成装置包括：喷墨头，被配置为排出水基油墨并在记录介质的表面上形成图像;介质输送部，构造成输送记录介质;溶液赋予部， 设置在记录介质传送方向上的喷墨头的上游，并且使用另一个喷墨头将溶液赋予其上形成有图像的记录介质的表面;以及控制器，被配置为计算要赋予的溶液的赋予量 并且控制对记录介质的赋予操作。

公开(公告)号：US07892973B2

公开(公告)日：2011-02-22

申请号：US12605586

申请日：2009-10-26

申请人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi

发明人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/14181

摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

摘要翻译： 在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。 半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在 半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

公开(公告)号：US20110038128A1

公开(公告)日：2011-02-17

申请号：US12988990

申请日：2009-03-02

申请人： Kohei Kitagawa ,  Nobuaki Takahashi ,  Masahiro Imai ,  Koichi Yoshioka

发明人： Kohei Kitagawa ,  Nobuaki Takahashi ,  Masahiro Imai ,  Koichi Yoshioka

IPC分类号： H05K1/00 ,  H05K5/00

CPC分类号： H05K1/0215 ,  G02F1/133308 ,  G02F1/13452 ,  G02F2001/133314 ,  G02F2001/133317 ,  G02F2001/13332 ,  G02F2001/133322 ,  G02F2001/133325 ,  G02F2001/133334 ,  G02F2201/465 ,  H05K1/0393 ,  H05K2201/10393

摘要： An FPC board (1) is mounted on a front bezel (BZ1) and a rear bezel (BZ2). The outer claw (CW1) of the front bezel (BZ1) and the inner claw (CW2) of the rear bezel (BZ2) are engaged with each other while holding the ground portion (12) of the FPC board (1) therebetween.

摘要翻译： FPC板（1）安装在前挡板（BZ1）和后挡板（BZ2）上。 前面板（BZ1）的外爪（CW1）和后边框（BZ2）的内爪（CW2）彼此接合，同时保持FPC基板（1）的接地部分（12）。

公开(公告)号：US20100234578A1

公开(公告)日：2010-09-16

申请号：US12729997

申请日：2010-03-23

申请人： Toshifumi Mikayama ,  Hitoshi Yoshida ,  Walker R. Force ,  Xingjie Chen ,  Nobuaki Takahashi

发明人： Toshifumi Mikayama ,  Hitoshi Yoshida ,  Walker R. Force ,  Xingjie Chen ,  Nobuaki Takahashi

IPC分类号： C07K16/18

CPC分类号： C07K16/2878 ,  A61K2039/505 ,  C07K2317/21 ,  C07K2319/00 ,  C07K2319/30

摘要： An antibody or a functional fragment thereof, acting agonistically or antagonistically on CD40.

摘要翻译： 一种抗体或其功能片段，在CD40上起激动作用或拮抗作用。

公开(公告)号：US20100171804A1

公开(公告)日：2010-07-08

申请号：US12644419

申请日：2009-12-22

申请人： Nobuaki Takahashi ,  Atsushi Kubota ,  Kazuhiko Ohtsu ,  Satoshi Kaiho ,  Takashi Kado

发明人： Nobuaki Takahashi ,  Atsushi Kubota ,  Kazuhiko Ohtsu ,  Satoshi Kaiho ,  Takashi Kado

IPC分类号： B41J2/01

CPC分类号： B41J11/0085 ,  B41J11/0025 ,  B41J11/007

摘要： An image recording apparatus includes a conveyance unit which includes a conveyance belt and an air suction unit for sucking air through the conveyance belt to adsorb a recording medium onto the conveyance belt. A recording head ejects ink to carry out recording on the recording medium conveyed by the conveyance unit. An adsorption force adjusting unit adjusts the adsorption force for the recording medium on the conveyance belt, which occurs by sucking air, according to the size of the recording medium.

摘要翻译： 图像记录装置包括输送单元，该输送单元包括输送带和吸气单元，用于通过输送带吸入空气以将记录介质吸附到输送带上。 记录头喷射墨水以在由输送单元输送的记录介质上进行记录。 吸附力调节单元根据记录介质的尺寸来调节通过吸入空气发生的输送带上的记录介质的吸附力。

公开(公告)号：US20100144091A1

公开(公告)日：2010-06-10

申请号：US12656616

申请日：2010-02-04

申请人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi ,  Yoichiro Kurita ,  Masahiro Komuro ,  Satoshi Matsui

发明人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi ,  Yoichiro Kurita ,  Masahiro Komuro ,  Satoshi Matsui

IPC分类号： H01L21/50

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/562 ,  H01L23/642 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2223/6622 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10155 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.

摘要翻译： 一种制造半导体器件的方法包括形成互连部件，将具有半导体衬底的第一半导体芯片以面向下的方式安装在互连部件上，在互连部件上形成树脂层以覆盖第一半导体的侧表面 芯片，使第一半导体芯片和树脂层变薄，在第一半导体芯片的背面上形成无机绝缘层，以与背面接触并延伸到树脂层上，并形成通孔，从而形成通孔 以穿透无机绝缘层和半导体衬底。

公开(公告)号：US20090199612A1

公开(公告)日：2009-08-13

申请号：US12318882

申请日：2009-01-12

申请人： Nobuaki Takahashi ,  Akio Yamamoto ,  Masahiko Hamada

发明人： Nobuaki Takahashi ,  Akio Yamamoto ,  Masahiko Hamada

IPC分类号： B21D9/00 ,  B21D9/05

CPC分类号： B21C37/08 ,  B23K33/006 ,  B23K2101/06 ,  B23K2103/04 ,  C21D9/08 ,  C21D9/50 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06

摘要： A high-strength hot bend pipe which has a balance between an excellent strength of at least X70 grade and toughness and which has excellent tensile properties and a weld metal with excellent low temperature toughness is manufactured. A UOE steel pipe having a base metal with a composition of C: 0.03-0.12%, Si: 0.05-0.50%, Mn: 1.4-2.2%, S: at most 0.01%, Al: at most 0.06%, N: at most 0.008%, and a remainder of Fe and impurities, with the carbon equivalent (Ceq) being at most 0.36% and the weld cracking parameter (Pcm) being at most 0.22%, and having a weld metal with a weld cracking parameter (Pcm) of at most 0.28%, a B content of at most 5 ppm, and an O content of at most 280 ppm is heated to a temperature range of 900-1100° C. and subjected to bending, and then is immediately cooled to a temperature range of 300° C. or lower at a cooling rate of at least 3° C./sec, and then is tempered in a temperature range of 300-500° C.

摘要翻译： 制造具有至少X70等级的优异强度和具有优异的拉伸性能的优异强度与具有优异的低温韧性的焊接金属之间的平衡的高强度热弯管。 具有组成为C：0.03〜0.12％，Si：0.05〜0.50％，Mn：1.4〜2.2％，S：0.01％以下，Al：0.06％以下的贱金属的UOE钢管，N： 最多0.008％，余量为Fe和杂质，碳当量（Ceq）最大为0.36％，焊接裂纹参数（Pcm）为0.22％以下，具有焊缝裂纹参数（Pcm ）为0.28％以下，B含量为5ppm以下，O含量为280ppm以下，加热到900〜1100℃的温度范围，进行弯曲，然后立即冷却至 温度范围为300℃以下，冷却速度为3℃/秒以上，然后在300-500℃的温度范围内回火。