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91.发明申请METHOD FOR MAKING A PHOTOVOLTAIC CELL COMPRISING CONTACT REGIONS DOPED THROUGH A LAMINA 有权用于制造包含通过层间结合的接触区域的光伏电池的方法公开(公告)号：US20100159630A1
公开(公告)日：2010-06-24
申请号：US12339032
申请日：2008-12-18
IPC分类号： H01L21/18
CPC分类号： H01L31/03921 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： In aspects of the present invention, a method is disclosed to form a lamina having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.
摘要翻译： 在本发明的方面，公开了一种形成具有相对的第一和第二表面的薄片的方法。 重掺杂的接触区域从第一表面延伸到第二表面。 通常，通过将半导体施主体附着到接收器元件，然后从半导体施主体分离薄层而形成薄片，其中薄片保持固定在接收器元件上。 在本发明中，重掺杂的接触区域通过在切割层之前掺杂半导体施主体形成。 然后制造包括层板的光伏电池。 通过在接合元件接合之前形成重掺杂的接触区域并且断开，可以避免后接合高温步骤，这可能是有利的。
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92.发明申请公开(公告)号：US20100154873A1
公开(公告)日：2010-06-24
申请号：US12339038
申请日：2008-12-18
IPC分类号： H01L31/00
CPC分类号： H01L31/03921 , H01L21/187 , H01L21/76254 , H01L31/022441 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： In aspects of the present invention, a lamina is formed having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.
摘要翻译： 在本发明的方面中，形成具有相对的第一和第二表面的层。 重掺杂的接触区域从第一表面延伸到第二表面。 通常，通过将半导体施主体附着到接收器元件，然后从半导体施主体分离薄层而形成薄片，其中薄片保持固定在接收器元件上。 在本发明中，重掺杂的接触区域通过在切割层之前掺杂半导体施主体形成。 然后制造包括层板的光伏电池。 通过在接合元件接合之前形成重掺杂的接触区域并且断开，可以避免后接合高温步骤，这可能是有利的。
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公开(公告)号：US07706177B2
公开(公告)日：2010-04-27
申请号：US12003571
申请日：2007-12-28
申请人： Christopher J. Petti
发明人： Christopher J. Petti
IPC分类号： G11C11/00
CPC分类号： G11C11/5692 , G11C13/00 , G11C13/0023 , G11C13/0069 , G11C17/16 , G11C17/165 , G11C2013/009 , G11C2213/33 , G11C2213/71 , G11C2213/72
摘要： A method of programming a nonvolatile memory array including a plurality of nonvolatile memory cells, a plurality of bit lines, and a plurality of word lines, wherein each memory cell comprises a diode, or a diode and a resistivity switching element is disclosed. The method includes both bias programming the memory cells of the device.
摘要翻译： 一种编程包括多个非易失性存储单元，多个位线和多个字线的非易失性存储器阵列的方法，其中每个存储单元包括二极管，或二极管和电阻率开关元件。 该方法包括对设备的存储器单元的偏置编程。
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公开(公告)号：US20090194164A1
公开(公告)日：2009-08-06
申请号：US12208396
申请日：2008-09-11
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
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95.发明申请PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA HAVING LOW BASE RESISTIVITY AND METHOD OF MAKING 有权包含具有低碱性电阻率的薄片的光电池和制造方法公开(公告)号：US20090194153A1
公开(公告)日：2009-08-06
申请号：US12189157
申请日：2008-08-10
IPC分类号： H01L31/00
CPC分类号： H01L31/03682 , H01L31/022425 , H01L31/03685 , H01L31/03762 , H01L31/061 , H01L31/1804 , H01L31/1808 , H01L31/1816 , H01L31/1836 , H01L31/1852 , H01L31/1896 , Y02E10/544 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Fabrication of a photovoltaic cell comprising a thin semiconductor lamina may require additional processing after the semiconductor lamina is bonded to a receiver. To minimize high-temperature steps after bonding, the p-n junction is formed at the back of the cell, at the bonded surface. In some embodiments, the front surface of the semiconductor lamina is not doped or is locally doped using low-temperature methods. The base resistivity of the photovoltaic cell may be reduced, allowing a front surface field to be reduced or omitted.
摘要翻译： 在半导体层结合到接收器之后，包括薄半导体层的光伏电池的制造可能需要额外的处理。 为了使结合后的高温步骤最小化，在接合表面处，在电池背面形成p-n结。 在一些实施例中，半导体薄片的前表面不是掺杂的或使用低温方法局部掺杂。 可以减小光伏电池的基极电阻率，从而可以减小或省略前表面场。
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公开(公告)号：US20080311722A1
公开(公告)日：2008-12-18
申请号：US11763876
申请日：2007-06-15
IPC分类号： H01L21/331
CPC分类号： H01L29/66265 , G11C17/16 , H01L29/7317
摘要： A method is described for forming a semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide. The emitter region and collector region also may be formed from polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium silicide.
摘要翻译： 描述了一种用于形成半导体器件的方法，该半导体器件包括具有基极区域，发射极区域和集电极区域的双极晶体管，其中，所述基极区域包括通过使硅，锗或硅锗与硅化物，锗化锗接触而形成的多晶半导体材料 或锗化锗。 发射极区域和集电极区域也可以由通过使硅，锗或硅锗与硅化物，锗化锗或锗化锗形成金属接触而形成的多晶半导体材料形成。 多晶半导体材料优选为与C49相钛硅化物接触形成的硅化多晶硅。
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公开(公告)号：US20080308903A1
公开(公告)日：2008-12-18
申请号：US11763816
申请日：2007-06-15
IPC分类号： H01L27/082 , H01L31/112
CPC分类号： H01L29/7317 , G11C5/025 , G11C11/416 , H01L27/0688 , H01L27/1022 , H01L29/456 , H01L29/735
摘要： A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide is described. The emitter region and collector region also may comprise polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium silicide.
摘要翻译： 一种半导体器件，包括具有基极区域，发射极区域和集电极区域的双极晶体管，其中所述基极区域包括通过使与硅化物，锗化物或硅化物锗化物接触的硅，锗或锗锗结晶而形成的多晶半导体材料。 发射极区域和集电极区域还可以包括通过使硅，锗或锗锗与硅化物，锗化锗或锗化锗形成金属接触而形成的多晶半导体材料。 多晶半导体材料优选为与C49相钛硅化物接触形成的硅化多晶硅。
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公开(公告)号：US20080179685A1
公开(公告)日：2008-07-31
申请号：US11669850
申请日：2007-01-31
申请人： Christopher J. Petti
发明人： Christopher J. Petti
IPC分类号： H01L29/76
CPC分类号： H01L27/105 , H01L27/0629 , H01L27/0811 , H01L27/1021 , H01L27/112 , H01L27/11206 , Y10S257/91
摘要： In some aspects, a memory circuit is provided that includes (1) a two-terminal memory element formed on a substrate; and (2) a CMOS transistor formed on the substrate and adapted to program the two-terminal memory element. The two-terminal memory element is formed between a gate layer and a first metal layer of the memory circuit. Numerous other aspects are provided.
摘要翻译： 在一些方面，提供一种存储器电路，其包括（1）形成在衬底上的两端存储元件; 和（2）形成在所述衬底上并适于编程所述两端存储元件的CMOS晶体管。 两端存储元件形成在存储电路的栅极层和第一金属层之间。 提供了许多其他方面。
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99.发明授权Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide 有权包括结二极管接触的半导体器件接触 - 反熔丝单元包括硅化物公开(公告)号：US06946719B2
公开(公告)日：2005-09-20
申请号：US10728230
申请日：2003-12-03
IPC分类号： G11C17/16 , H01L23/525 , H01L27/10 , H01L27/102 , H01L29/00
CPC分类号： H01L27/101 , G11C17/16 , H01L23/5252 , H01L27/1021 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The invention provides for a vertically oriented junction diode having a contact-antifuse unit in contact with one of its electrodes. The contact-antifuse unit is formed either above or below the junction diode, and comprises a silicide with a dielectric antifuse layer formed on and in contact with it. In preferred embodiments, the silicide is cobalt silicide, and the antifuse preferably silicon oxide, silicon nitride, or silicon oxynitride grown on the colbalt silicide. The junction diode and contact-antifuse unit can be used as a memory cell, which is advantageously used in a monolithic three dimensional memory array.
摘要翻译： 本发明提供了一种垂直取向的结二极管，其具有与其电极之一接触的接触 - 反熔丝单元。 接触 - 反熔丝单元形成在结二极管上方或下方，并且包括形成在其上并与其接触的介电反熔丝层的硅化物。 在优选的实施方案中，硅化物是硅化钴，反熔丝优选在硅化钴上生长的氧化硅，氮化硅或氮氧化硅。 结二极管和接触 - 反熔丝单元可用作存储单元，其有利地用于单片三维存储器阵列中。
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100.发明授权Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element 有权背接触光伏电池，包括具有上覆接收元件的薄层公开(公告)号：US08921686B2
公开(公告)日：2014-12-30
申请号：US13425870
申请日：2012-03-21
IPC分类号： H01L31/00 , H01L31/02 , H01L21/04 , H01L27/142 , H01L31/0392 , H01L31/042 , H01L31/18
CPC分类号： H01L27/142 , H01L31/03921 , H01L31/042 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method to fabricate a photovoltaic device includes forming first and second contact regions at the first surface of a semiconductor donor body. A cleave plane may be formed by implanting ions into the donor body, and a lamina that includes the contact regions is cleaved from the donor body at the cleave plane. The first surface of the lamina may be contacted with a temporary support and fabricated into a photovoltaic device, wherein the lamina comprises the base of the photovoltaic device.
摘要翻译： 制造光伏器件的方法包括在半导体施主体的第一表面形成第一和第二接触区域。 可以通过将离子注入给体体中形成切割平面，并且包括接触区域的层在分裂面处从施主体断裂。 薄片的第一表面可以与临时支撑件接触并制成光伏器件，其中薄片包括光伏器件的基极。
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