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公开(公告)号：US20210083600A1
公开(公告)日：2021-03-18
申请号：US17097232
申请日：2020-11-13
Applicant: Samsung Electronics Co., Ltd. , UNITS (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventor： Jae-Young KIM , Kyungeun BYUN , Minsu SEOL , Hyeonjin SHIN , Jeongmin BAIK , Jinsung CHUN , Byeonguk YE
Abstract: A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.
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公开(公告)号：US20210074543A1
公开(公告)日：2021-03-11
申请号：US17012661
申请日：2020-09-04
Inventor： Changhyun KIM , Sangwoo KIM , Kyung-Eun BYUN , Hyeonjin SHIN , Ahrum SOHN , Jaehwan JUNG
Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.
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公开(公告)号：US20210043452A1
公开(公告)日：2021-02-11
申请号：US16851675
申请日：2020-04-17
Inventor： Changhyun KIM , Sang-Woo KIM , Kyung-Eun BYUN , Hyeonjin SHIN , Ahrum SOHN , Jaehwan JUNG
IPC: H01L21/02
Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.
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94.发明申请公开(公告)号：US20200035611A1
公开(公告)日：2020-01-30
申请号：US16215899
申请日：2018-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Eun Byun , Keunwook SHIN , Yonghoon KIM , Hyeonjin SHIN , Hyunjae SONG , Changseok LEE , Changhyun KIM , Yeonchoo CHO
IPC: H01L23/532 , H01L23/522 , H01L21/768
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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95.发明申请公开(公告)号：US20190164754A1
公开(公告)日：2019-05-30
申请号：US16012938
申请日：2018-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Haeryong KIM , Hyeonjin SHIN , Jaeho LEE , Sanghyun JO
IPC: H01L21/02 , H01L29/66 , H01L29/786 , H01L29/24
Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.
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Patent Agency Ranking
公开(公告)号：US20190157491A1
公开(公告)日：2019-05-23
申请号：US15942659
申请日：2018-04-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanghyun JO , Jaeho LEE , Haeryong KIM , Hyeonjin SHIN
IPC: H01L31/107 , H01L27/146 , H01L31/02 , H01L31/0224 , H01L31/0352 , H01S5/0687 , G01S7/481 , G01S17/93
Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.
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公开(公告)号：US20190097215A1
公开(公告)日：2019-03-28
申请号：US16015835
申请日：2018-06-22
Inventor： Minhyun LEE , Seongjun PARK , Hyunjae SONG , Hyeonjin SHIN , Ki-Bum KIM , Yunhho KANG , Sanghun LEE
IPC: H01M4/36 , H01M10/0525 , H01M4/133 , H01M4/587 , H01M4/38
Abstract: Provided are lithium ion batteries including a nano-crystalline graphene electrode. The lithium ion battery includes a cathode on a cathode current collector, an electrolyte layer on the cathode, an anode on the electrolyte layer, and an anode current collector on the anode. The anode and the cathode include a plurality of grains having a size in a range from about 5 nm to about 100 nm. The cathode has a double bonded structure in which a carbon of the graphene is combined with oxygen.
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98.发明申请公开(公告)号：US20190035635A1
公开(公告)日：2019-01-31
申请号：US16036113
申请日：2018-07-16
Inventor： Sangwon KIM , Changsik SONG , Dongcheol JEONG , Minsu SEOL , Hyeonjin SHIN , Dongwook LEE , Taewoo KIM , Juhyen LEE , Hyejin CHO
IPC: H01L21/308 , G03F7/004 , H01L21/311 , G03F7/16 , H01L29/16 , G03F7/027 , C07B37/12
Abstract: Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.
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99.发明申请公开(公告)号：US20190033705A1
公开(公告)日：2019-01-31
申请号：US16004585
申请日：2018-06-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun LEE , Hyeonjin SHIN , Seongjun JEONG , Seongjun PARK
IPC: G03F1/62
Abstract: A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.
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100.发明申请公开(公告)号：US20190019675A1
公开(公告)日：2019-01-17
申请号：US15874226
申请日：2018-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongwook LEE , Sangwon KIM , Minsu SEOL , Seongjun PARK , Hyeonjin SHIN , Yunseong LEE , Seongjun JEONG , Alum JUNG
IPC: H01L21/033 , H01L21/311 , C01B32/194
Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M-O—C bond or an M-C bond, where M is a metal element, O is oxygen, and C is carbon.
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