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公开(公告)号：US20150303913A1
公开(公告)日：2015-10-22
申请号：US14716918
申请日：2015-05-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki MIYAKE , Kei TAKAHASHI
IPC: H03K17/16 , G11C19/28 , G09G3/36 , H03K17/687
CPC classification number: H03K17/162 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0819 , G09G2310/0286 , G09G2310/0289 , G09G2320/043 , G09G2320/045 , G11C19/28 , G11C19/285 , H01L27/088 , H01L27/1288 , H01L29/04 , H01L29/78696 , H03K17/687
Abstract: An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.
Abstract translation: 本发明的目的是抑制薄膜晶体管的劣化。 多个脉冲输出电路各自包括第一至第十一薄膜晶体管。 脉冲输出电路基于控制每个晶体管的多个时钟信号，从前一级的脉冲输出电路输入的前级信号，下一级的脉冲输出电路输入的下一级信号， 和复位信号。 此外，微晶半导体用作用作每个晶体管的沟道区的半导体层。 因此，可以抑制晶体管的特性的劣化。
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公开(公告)号：US20150261352A1
公开(公告)日：2015-09-17
申请号：US14643285
申请日：2015-03-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki MIYAKE
CPC classification number: G06F3/044 , G06F3/0412 , G06F3/042 , G06F2203/04106
Abstract: A novel input device that is highly convenient or reliable or a novel input/output device that is highly convenient or reliable. The following structure is contemplated. The input device includes sensor units that are arranged in a matrix and each include a window portion which transmits visible light, a light-transmitting first sensing element which includes an insulating layer and a pair of electrodes between which the insulating layer is interposed and overlaps with the window portion, a second sensing element which includes a photoelectric conversion element and does not overlap with the window portion, and a sensing circuit which supplies a sensing signal on the basis of a change in the parasitic capacitance of the first sensing element or on the basis of the current flowing through the second sensing element; and a base layer supporting the sensor units.
Abstract translation: 一种非常方便或可靠的新型输入/输出设备，或者是非常方便或可靠的新型输入/输出设备。 考虑以下结构。 输入装置包括以矩阵形式布置的传感器单元，每个传感器单元包括透射可见光的窗口部分，包括绝缘层的透光第一感测元件和绝缘层插入并与其重叠的一对电极 窗口部分，包括光电转换元件并且不与窗口部分重叠的第二感测元件，以及感测电路，其基于第一感测元件的寄生电容的变化或者基于第 流过第二感测元件的电流的基础; 以及支撑传感器单元的基层。
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公开(公告)号：US20150194445A1
公开(公告)日：2015-07-09
申请号：US14658955
申请日：2015-03-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA
IPC: H01L27/12
CPC classification number: H01L27/124 , H01L27/1225 , H01L29/45
Abstract: A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
Abstract translation: 制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。 显示装置包括在同一基板上的驱动电路部分和显示部分。 驱动器电路部分包括驱动电路晶体管和驱动电路布线。 使用金属形成驱动电路晶体管的源电极和漏电极。 使用氧化物半导体形成驱动电路晶体管的沟道层。 驱动电路布线使用金属形成。 显示部分包括像素晶体管和显示部分布线。 使用透明氧化物导体形成像素晶体管的源电极和漏电极。 使用氧化物半导体形成像素晶体管的半导体层。 显示部分布线使用透明氧化物导体形成。
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公开(公告)号：US20150154925A1
公开(公告)日：2015-06-04
申请号：US14548966
申请日：2014-11-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Jun KOYAMA , Hiroyuki MIYAKE
CPC classification number: G09G3/3618 , G02F1/1345 , G06F3/0416 , G06F3/0421 , G06F3/044 , G09G3/3648 , G09G3/3655 , G09G3/3696 , G09G2300/0809 , G09G2310/04 , G09G2310/061 , G09G2310/08 , G09G2320/0209 , G09G2320/0219 , G09G2320/10 , G09G2320/103 , G09G2330/021 , G09G2340/0435 , G09G2340/16 , G09G2354/00
Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.
Abstract translation: 液晶显示装置包括具有端子部分的第一基板，开关晶体管，驱动电路部分和包括像素晶体管和多个像素的像素电路部分，第二基板设置有电连接到 通过开关晶体管的端子部分和像素电极与公共电极之间的液晶。 在将静止图像切换为运动图像的期间中，依次执行以下步骤：将公共电位提供给公共电极的第一步骤; 向驱动电路部供给电源电压的第2工序; 向所述驱动电路部提供时钟信号的第三步骤; 以及向所述驱动器电路部分提供起始脉冲信号的第四步骤。
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公开(公告)号：US20150145974A1
公开(公告)日：2015-05-28
申请号：US14612615
申请日：2015-02-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki MIYAKE
CPC classification number: H04N13/31 , G09G3/003 , G09G3/3208 , G09G2320/0209 , G09G2320/10 , H04N13/315 , H04N13/324 , H04N13/356
Abstract: The occurrence of crosstalk in a display device which performs 3D display is suppressed. When 3D display is performed, part of a plurality of pixels perform desired color display and the other part of the plurality of pixels perform black display. Thus, as compared to the case where all of a plurality of pixels perform desired color display, the occurrence of crosstalk can be suppressed. A plurality of pixels which perform desired color display are changed depending on the display state. Therefore, as compared to the case where a plurality of pixels which perform desired color display are fixed when 3D display is performed, the display device can have a longer period until display change in a pixel becomes obvious (a longer lifetime) and variations in display among the plurality of pixels can be reduced.
Abstract translation: 抑制了进行3D显示的显示装置中的串扰的发生。 当执行3D显示时，多个像素的一部分执行期望的彩色显示，并且多个像素的另一部分执行黑色显示。 因此，与多个像素全部进行期望的彩色显示的情况相比，可以抑制串扰的发生。 根据显示状态改变执行所需颜色显示的多个像素。 因此，与执行3D显示时固定执行期望的彩色显示的多个像素的情况相比，显示装置可以具有更长的周期，直到像素的显示改变变得明显（更长的寿命）和显示的变化 可以减少多个像素中的像素。
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Patent Agency Ranking
公开(公告)号：US20150099161A1
公开(公告)日：2015-04-09
申请号：US14490697
申请日：2014-09-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Aya HITOTSUYANAGI , Teppei OGUNI , Takuya MIWA , Hiroyuki MIYAKE
CPC classification number: H01M10/0525 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/136 , H01M4/386 , H01M4/525 , H01M4/5825 , H01M4/587 , H01M4/622 , H01M4/623 , H01M4/624 , H01M10/0583 , H01M10/0585 , H01M10/0587 , H01M10/425 , H01M2220/10 , H01M2220/20 , H01M2220/30 , Y02E60/122
Abstract: To achieve a power storage unit that can be repeatedly bent without a large decrease in charge and discharge capacity. In the flexible power storage unit, the content of a binder in an active material layer containing an active material is greater than or equal to 1 wt % and less than or equal to 10 wt %, preferably greater than or equal to 2 wt % and less than or equal to 8 wt %, and more preferably greater than or equal to 3 wt % and less than or equal to 5 wt %.
Abstract translation: 实现能够反复弯曲的蓄电单元，而不会大幅度降低充放电能力。 在柔性蓄电单元中，含有活性物质的活性物质层中的粘合剂含量为1重量％以上且10重量％以下，优选2重量％以下，优选2重量％以下， 小于或等于8重量％，更优选大于或等于3重量％且小于或等于5重量％。
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公开(公告)号：US20150060871A1
公开(公告)日：2015-03-05
申请号：US14534217
申请日：2014-11-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuya ARAO , Hiroyuki MIYAKE
IPC: H01L27/12
CPC classification number: H01L27/124 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L27/1296
Abstract: A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even if there is slight mask deviation. In view of them, a plurality of gate electrodes formed so as to overlap a lower concentration impurity region of a semiconductor layer than drain regions on a drain region side. Also, source regions and the drain regions corresponding to the respective gate electrodes are formed so that current flows in opposite directions each other through channel regions corresponding to the gate electrodes. Further, the number of the channel regions in which a current flows in a first direction is equal to the number of the channel regions in which a current flows in a direction opposite to the first direction.
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98.发明申请ELECTROCHEMICAL DEVICE AND METHOD FOR SUPPRESSING DETERIORATION OF THE ELECTROCHEMICAL DEVICE 审中-公开用于抑制电化学装置测定的电化学装置和方法公开(公告)号：US20140295261A1
公开(公告)日：2014-10-02
申请号：US14220354
申请日：2014-03-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki MIYAKE , Teppei OGUNI , Tatsuya TAKAHASHI , Takuya MIWA , Aya HITOTSUYANAGI
IPC: H01M10/0566 , H01M4/587 , H01M10/052
CPC classification number: H01M10/0566 , H01M4/5825 , H01M4/587 , H01M10/0525 , H01M10/0568 , H01M10/0569 , H01M2300/0037
Abstract: An object is to provide an electrochemical device in which lithium deposition and reduction in battery capacity can be inhibited even when the concentration of a lithium salt in an electrolytic solution is lower than 1.0 M. Lithium deposition can be inhibited and lithium whiskers can be dissolved by applying an inversion pulse current for a short time more than once in a charging period of a secondary battery which deteriorates. By applying the inversion pulse current more than once, deterioration of a lithium-ion secondary battery due to repeated charging can be suppressed even when it is a secondary battery in which the concentration of a lithium salt in an electrolytic solution is lower than 1.0 M and therefore lithium is easily deposited.
Abstract translation: 本发明的目的是提供一种电化学装置，其中即使当电解液中的锂盐浓度低于1.0M时，锂沉积和电池容量的降低也可以被抑制。可以抑制锂沉积并且可以通过以下方式溶解锂晶须 在劣化的二次电池的充电期间，多次施加反转脉冲电流多次。 通过多次施加反转脉冲电流，即使是电解液中的锂盐浓度低于1.0M的二次电池，也能够抑制由于重复充电引起的锂离子二次电池的劣化， 因此易于沉积锂。
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公开(公告)号：US20140241487A1
公开(公告)日：2014-08-28
申请号：US14185221
申请日：2014-02-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hiroyuki MIYAKE , Kouhei TOYOTAKA
IPC: H01L27/12 , H01L29/786 , G11C19/28 , H01L29/24
CPC classification number: G11C19/28 , G02F1/136277 , G09G3/3677 , G09G2310/0286 , G09G2310/0291 , G09G2310/0297 , H01L27/1225 , H01L29/7869
Abstract: To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.
Abstract translation: 提供具有高孔径比的半导体器件，并且包括具有高电荷电容的电容器。 提供具有窄边框的半导体器件。 衬底上的晶体管; 在其上提供晶体管的栅电极的表面上的第一导电膜; 在其上提供晶体管的一对电极的表面上的第二导电膜; 并且包括与第一导电膜和第二导电膜电连接的第一透光性导电膜。 第二导电膜与第二导电膜和第一导电膜之间的晶体管的栅极绝缘膜与第一导电膜重叠。
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公开(公告)号：US20140240631A1
公开(公告)日：2014-08-28
申请号：US14184996
申请日：2014-02-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hideaki SHISHIDO , Hiroyuki MIYAKE , Seiko INOUE , Kouhei TOYOTAKA , Koji KUSUNOKI
IPC: G02F1/1362
CPC classification number: G02F1/136286 , G02F1/136204 , H01L27/1225 , H01L27/124 , H01L29/66
Abstract: Transistors each include a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A driver circuit portion includes first to third wirings formed in the same step as the gate electrode, fourth to sixth wirings formed in the same step as the source electrode and the drain electrode, a seventh wiring formed in the same step as a pixel electrode, a first region where the second wiring intersects with the fifth wiring, and a second region where the third wiring intersects with the sixth wiring. The first wiring is connected to the fourth wiring through the seventh wiring. A distance between the wirings in the second region is longer than that in the first region.
Abstract translation: 晶体管各自包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。 驱动器电路部分包括以与栅电极相同的步骤形成的第一至第三布线，以与源电极和漏电极相同的步骤形成的第四至第六布线，与像素电极在相同步骤中形成的第七布线， 第二布线与第五布线相交的第一区域和第三布线与第六布线相交的第二区域。 第一布线通过第七布线连接到第四布线。 第二区域中的布线之间的距离比第一区域长。
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