利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

248 条记录 (耗时 0.034 秒)

    Resist composition and patterning process
    91.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06667145B1

    公开(公告)日：2003-12-23

    申请号：US09694369

    申请日：2000-10-24

    申请人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.

    摘要翻译： 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物，其Mw为1,000-500,000.R 1是H，甲基或CO 2 R 2，R 2是烷基，R 3是 H，甲基或CH 2 CO 2 R 2，R 4至R 7中的至少一个是含羧基或羟基的一价烃基，并且提醒独立地为H或烷基，R 8， R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基，并且提醒独立地是H或烷基，R 12是多环烃基或含有这种多环的烷基 烃基，R 13是酸不稳定基团，Z是构成其中含有羧酸酯，碳酸酯或酸酐的5-或6-元环的二价原子基团，k是0或1，x是 数字从0到1，“a”到“d”从0到小于1，x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率，基底粘附性和耐蚀刻性，并且在精确微细加工中非常有用。

    Resist composition and patterning process
    95.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06399274B1

    公开(公告)日：2002-06-04

    申请号：US09694706

    申请日：2000-10-24

    申请人： Takeshi Kinsho ,  Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Jun Hatakeyama

    发明人： Takeshi Kinsho ,  Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Jun Hatakeyama

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： A resist composition contains as a base resin a polymer comprising recurring units of the formula (1-1) or (1-2) and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is a straight, branched or cyclic C1-15 alkyl group, R3 is hydrogen, methyl or CH2CO2R2, R4 is an acid labile group, i is an integer of 1 to 4, and k is equal to 0 or 1. The resist composition has significantly improved sensitivity, resolution and etching resistance and is very useful in precise microfabrication.

    摘要翻译： 抗蚀剂组合物含有作为基础树脂的包含式（1-1）或（1-2）的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H，甲基或CO 2 R 2，R 2是直链，支链的 或环状C 1-15烷基，R 3是氢，甲基或CH 2 CO 2 R 2，R 4是酸不稳定基团，i是1至4的整数，并且k等于0或1.抗蚀剂组合物具有显着提高的灵敏度，分辨率 和抗蚀刻性，并且在精密微细加工中非常有用。

    Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative
    98.
    发明授权
    Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative 有权
    用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物

    公开(公告)号：US09076738B2

    公开(公告)日：2015-07-07

    申请号：US13183175

    申请日：2011-07-14

    申请人： Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho ,  Tsutomu Ogihara

    发明人： Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho ,  Tsutomu Ogihara

    IPC分类号： H01L21/311 ,  C07C69/753 ,  G03F7/11 ,  H01L21/027

    CPC分类号： H01L21/31144 ,  C07C69/753 ,  C07C2604/00 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/31116

    摘要： The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.

    摘要翻译： 本发明提供了一种用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的组合物，用于形成用于光刻的多层抗蚀剂膜的抗蚀剂下层膜，其中所述组合物至少包含（A）富勒烯衍生物，其为反应产物 具有富勒烯骨架的物质与具有吸电子基团的1,3-二烯化合物衍生物和（B）有机溶剂。 可以使用用于光刻中的多层抗蚀剂膜的抗蚀剂下层膜的组合物，该组合物赋予抗蚀剂下层膜，其具有优异的耐干蚀刻性，能够高效地抑制基板蚀刻期间的扭曲，并且能够避免中毒 使用化学增幅抗蚀剂的上层图案化问题; 形成抗蚀剂下层膜的工序; 图案化过程; 和富勒烯衍生物。

    Resist underlayer film composition and patterning process using the same
    99.
    发明授权
    Resist underlayer film composition and patterning process using the same 有权
    抗蚀剂下层膜组合物和使用其的图案化工艺

    公开(公告)号：US08663898B2

    公开(公告)日：2014-03-04

    申请号：US13311137

    申请日：2011-12-05

    申请人： Tsutomu Ogihara ,  Takeru Watanabe ,  Yusuke Biyajima ,  Daisuke Kori ,  Takeshi Kinsho ,  Toshihiko Fujii

    发明人： Tsutomu Ogihara ,  Takeru Watanabe ,  Yusuke Biyajima ,  Daisuke Kori ,  Takeshi Kinsho ,  Toshihiko Fujii

    IPC分类号： G03F7/00 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/091 ,  G03F7/094

    摘要： There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

    摘要翻译： 公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种 由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

    Resist underlayer film composition and patterning process using the same
    100.
    发明授权
    Resist underlayer film composition and patterning process using the same 有权
    抗蚀剂下层膜组合物和使用其的图案化工艺

    公开(公告)号：US08592956B2

    公开(公告)日：2013-11-26

    申请号：US13292696

    申请日：2011-11-09

    申请人： Tsutomu Ogihara ,  Daisuke Kori ,  Yusuke Biyajima ,  Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho

    发明人： Tsutomu Ogihara ,  Daisuke Kori ,  Yusuke Biyajima ,  Takeru Watanabe ,  Toshihiko Fujii ,  Takeshi Kinsho

    IPC分类号： H01L23/58 ,  H01L21/469

    CPC分类号： G03F7/11 ,  G03F7/091 ,  G03F7/095

    摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

    摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和 一种或多种由以下通式（2）表示的化合物和/或其等同体。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高 图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。