公开(公告)号：US20140061649A1

公开(公告)日：2014-03-06

申请号：US13600323

申请日：2012-08-31

申请人： Shelby F. Nelson ,  Carolyn R. Ellinger ,  David H. Levy

发明人： Shelby F. Nelson ,  Carolyn R. Ellinger ,  David H. Levy

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A third inorganic thin film dielectric layer has a third pattern. A semiconductor layer is in contact with and has the same pattern as the third inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.

摘要翻译： 晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。 具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。 第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。 第三无机薄膜电介质层具有第三图案。 半导体层与第三无机薄膜电介质材料层接触并具有相同的图案。 源极/漏极包括第二导电层堆叠。

公开(公告)号：US20140061648A1

公开(公告)日：2014-03-06

申请号：US13600308

申请日：2012-08-31

申请人： David H. Levy ,  Carolyn R. Ellinger ,  Shelby F. Nelson

发明人： David H. Levy ,  Carolyn R. Ellinger ,  Shelby F. Nelson

IPC分类号： H01L29/786

CPC分类号： H01L29/4908

摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A semiconductor layer has a third pattern. A source/drain includes a second electrically conductive layer stack.

摘要翻译： 晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。 具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。 第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。 半导体层具有第三图案。 源/漏包括第二导电层堆叠。

公开(公告)号：US20120219712A1

公开(公告)日：2012-08-30

申请号：US13466507

申请日：2012-05-08

申请人： Roger S. Kerr ,  David H. Levy ,  James T. Murray

发明人： Roger S. Kerr ,  David H. Levy ,  James T. Murray

IPC分类号： C23C16/455 ,  F15D1/02 ,  B23P11/00

CPC分类号： B05B1/005 ,  C23C16/45551 ,  C23C16/45574 ,  Y10T29/494 ,  Y10T29/49432 ,  Y10T29/49826 ,  Y10T137/0318 ,  Y10T137/87249

摘要： A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.

摘要翻译： 用于薄膜材料沉积的递送装置具有至少第一，第二和第三入口端口，用于分别接收用于第一，第二和第三气态材料的共同供应。 第一，第二和第三细长发射通道中的每一个允许与对应的第一，第二和第三入口端口之一的气态流体连通。 输送装置可以由孔板形成，叠加以限定互连供应室的网络，并且引导通道，用于将每个气态材料从其对应的入口端口路由到相应的多个细长的发射通道。 输送装置包括由相对板之间的浮雕图案形成的扩散通道。 还公开了一种用于薄膜沉积的方法。 最后，更一般地，公开了一种流扩散器和相应的扩散流的方法。

公开(公告)号：US20120080778A1

公开(公告)日：2012-04-05

申请号：US13313055

申请日：2011-12-07

申请人： David H. Levy

发明人： David H. Levy

IPC分类号： H01L23/00

CPC分类号： C23C16/04 ,  C23C16/45551 ,  C23C16/545 ,  H01L21/02554 ,  H01L21/02642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device is prepared using a chemical vapor deposition method and has a patterned thin film on a substrate that is applied using a deposition inhibitor material. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material can be patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

摘要翻译： 使用化学气相沉积方法制备器件，并且在使用沉积抑制剂材料施加的衬底上具有图案化薄膜。 沉积抑制剂材料是亲水性聚合物，其是pKa为5或更小的中和酸，其中至少90％的酸基被中和。 沉积抑制剂材料可以同时或随后施加到基底上，以有效地提供不具有沉积抑制剂材料的基底的选定区域。 薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

公开(公告)号：US07998878B2

公开(公告)日：2011-08-16

申请号：US12622550

申请日：2009-11-20

申请人： David H. Levy ,  Lee W. Tutt

发明人： David H. Levy ,  Lee W. Tutt

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： C23C16/042 ,  C23C16/02 ,  C23C16/306 ,  C23C16/45551

摘要： A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

摘要翻译： 用于形成图案化薄膜的诸如原子层沉积方法的化学气相沉积方法包括将沉积抑制剂材料施加到基底上。 沉积抑制剂材料是可溶于包含至少50重量％水并且酸含量低于2.5meq / g聚合物的水溶液的亲水性聚合物。 沉积抑制剂材料被图案化同时或随后被应用于基底，以提供有效地不具有沉积抑制剂材料的基底的选定区域。 薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

公开(公告)号：US20110097494A1

公开(公告)日：2011-04-28

申请号：US12606231

申请日：2009-10-27

申请人： Roger S. Kerr ,  David H. Levy ,  James E. Sutton

发明人： Roger S. Kerr ,  David H. Levy ,  James E. Sutton

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： C23C16/458 ,  C23C16/45551 ,  C23C16/545 ,  Y10T137/8593

摘要： A fluid conveyance system for thin film material deposition includes a fluid distribution manifold and a substrate transport mechanism. The fluid distribution manifold includes an output face that includes a plurality of elongated slots. The output face of the fluid distribution manifold is positioned opposite a first surface of the substrate such that the elongated slots face the first surface of the substrate and are positioned proximate to the first surface of the substrate. The substrate transport mechanism causes a substrate to travel in a direction and includes a flexible mechanism that contacts a second surface of the substrate in a region that is proximate to the output face of the fluid distribution manifold.

摘要翻译： 用于薄膜材料沉积的流体输送系统包括流体分配歧管和基底输送机构。 流体分配歧管包括包括多个细长槽的输出面。 流体分配歧管的输出面与衬底的第一表面相对定位，使得细长的槽面对衬底的第一表面并且靠近衬底的第一表面定位。 衬底传送机构使衬底沿一个方向行进，并且包括在靠近流体分配歧管的输出面的区域中接触衬底的第二表面的柔性机构。

公开(公告)号：US20110097493A1

公开(公告)日：2011-04-28

申请号：US12606223

申请日：2009-10-27

申请人： Roger S. Kerr ,  David H. Levy

发明人： Roger S. Kerr ,  David H. Levy

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45578 ,  C23C16/45587

摘要： A fluid conveyance device for thin film material deposition includes a substrate transport mechanism that causes a substrate to travels in a direction. A fluid distribution manifold includes an output face. The output face includes a plurality of elongated slots. At least one of the elongated slots includes a portion that is non-perpendicular and non-parallel relative to the direction of substrate travel.

摘要翻译： 用于薄膜材料沉积的流体输送装置包括使基板沿一个方向行进的基板输送机构。 流体分配歧管包括输出面。 输出面包括多个细长槽。 细长槽中的至少一个包括相对于衬底移动方向非垂直和非平行的部分。

公开(公告)号：US07858144B2

公开(公告)日：2010-12-28

申请号：US11861618

申请日：2007-09-26

申请人： Diane C. Freeman ,  David H. Levy ,  Peter J. Cowdery-Corvan

发明人： Diane C. Freeman ,  David H. Levy ,  Peter J. Cowdery-Corvan

IPC分类号： B05D5/12

CPC分类号： C23C16/30 ,  B05D1/60 ,  B05D2252/02 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/545

摘要： A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.

摘要翻译： 公开了通过原子层沉积在衬底上制造有机薄膜的方法，该方法包括同时引导一系列沿着大致平行的细长通道的气流，并且其中一系列气流依次包括至少第一 反应性气态材料，惰性吹扫气体和第二反应性气体材料，任选地重复多次，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应，其中第一反应性气态材料 ，第二反应性气体物质或两者都是挥发性有机化合物。 在有机薄膜的沉积期间，该过程基本上在大气压以上且在250℃以下的温度下进行。

公开(公告)号：US20090081886A1

公开(公告)日：2009-03-26

申请号：US11861372

申请日：2007-09-26

申请人： David H. Levy ,  Roger S. Kerr ,  Jeffrey T. Carey

发明人： David H. Levy ,  Roger S. Kerr ,  Jeffrey T. Carey

IPC分类号： H01L21/311 ,  C23C16/00

CPC分类号： C23C16/45551 ,  B33Y80/00 ,  C23C16/458 ,  H01L29/4908 ,  Y10S438/908

摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

公开(公告)号：US20090081356A1

公开(公告)日：2009-03-26

申请号：US11861519

申请日：2007-09-26

申请人： Elena A. Fedorovskaya ,  Michael L. Boroson ,  David H. Levy ,  John A. Agostinelli

发明人： Elena A. Fedorovskaya ,  Michael L. Boroson ,  David H. Levy ,  John A. Agostinelli

IPC分类号： B05D5/12

CPC分类号： B05D5/00 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45551 ,  C23C16/45574 ,  H01L51/5253

摘要： A process is disclosed for making a thin film encapsulation package for an OLED device by depositing a thin film material on an OLED device to be encapsulated, comprising simultaneously directing a series of gas flows along substantially parallel elongated output openings, wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material to form an encapsulating thin film, wherein the first reactive gaseous material is a volatile organo-metal precursor compound. The process is carried out substantially at or above atmospheric pressure, and the temperature of the substrate during deposition is under 250° C.

摘要翻译： 公开了一种用于通过在待封装的OLED器件上沉积薄膜材料来制造用于OLED器件的薄膜封装封装的方法，其包括同时沿着基本上平行的细长输出开口引导一系列气流，其中所述一系列气流 包括依次包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气体材料，任选重复多次，其中第一反应性气态材料能够与用第二反应性气态材料处理的基底表面反应 反应性气态物质形成封装薄膜，其中第一反应性气体材料是挥发性有机金属前体化合物。 该过程基本上等于或大于大气压，并且沉积期间基底的温度在250℃以下