摘要:
Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.
摘要:
In an aspect, an inspection method for detecting the presence or absence of a defect on an object, the object comprising a recess having a physical depth, is disclosed. The method includes directing radiation at the object, the radiation having a wavelength that is substantially equal to twice an optical depth of the recess, detecting radiation that is re-directed by the object or a defect on the object, and determining the presence or absence of a defect from the re-directed radiation.
摘要:
An EUV lithography reticle is inspected to detect contaminant particles. The inspection apparatus comprises illumination optics with primary radiation. An imaging optical system with plural branches is arranged to form and detect a plurality of images, each branch having an image sensor and forming its image with a different portion of radiation received from the illuminated article. A processor combines information from the detected images to report on the presence and location of contaminant particles. In one or more branches the primary radiation is filtered out, so that the detected image is formed using only secondary radiation emitted by contaminant material in response to the primary radiation. In a dark field imaging branch using the scattered primary radiation, a spatial filter blocks spatial frequency components associated with periodic features of the article under inspection, to allow detection of particles which cannot be detected by secondary radiation.
摘要:
A source configured to generate EUV radiation includes a fuel droplet generator configured to deliver a droplet of fuel to an interaction point, optics configured to deliver fuel vaporizing and exciting radiation to the interaction point to generate a plasma, and a collector arranged to collect EUV radiation emitted by the plasma. The optics are arranged such that in use the fuel vaporizing and exciting radiation is incident upon more than one side of the fuel droplet at the interaction point.
摘要:
A radiation source is configured to generate radiation. The radiation source includes a first electrode and a second electrode configured to produce an electrical discharge during use to generate radiation-emitting plasma from a plasma fuel. The radiation source also includes a fuel supply configured to supply a plasma fuel to a fuel release area that is associated with the first electrode and the second electrode, and a fuel release configured to induce release of fuel, supplied by the fuel supply, from the fuel release area. The fuel release area is spaced-apart from the first electrode and from the second electrode.
摘要:
According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 μm.
摘要:
An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.
摘要:
A radiation source for generation of extreme ultraviolet radiation or use in high resolution lithography includes a plasma formation site where fuel is contacted by a radiation beam to form a plasma generating EUV radiation. A mirrored collector collects and reflects the EUV radiation generated at a first focus towards a second focus. A contamination barrier is positioned such the periphery of the contamination barrier does not occlude more than 50% of the solid angle subtended by the mirror at the second focus, such that EUV radiation reflected by the collector mirror is not excessively attenuated by passing through the contamination barrier. The contamination barrier serves to trap fuel material such as ions, atoms, molecules or nanodroplets from the plasma to prevent their deposition onto the collector mirror where they reduce the mirror's effective lifetime.
摘要:
A spectral purity filter, in particular for use in a lithographic apparatus using EUV radiation for the projection beam, includes a plurality of apertures in a substrate. The apertures are defined by walls having side surfaces that are inclined to the normal to a front surface of the substrate.
摘要:
A lithographic apparatus includes an illumination system configured to transmit a beam of radiation, the beam of radiation comprising desired radiation having a predetermined wavelength or a predetermined wavelength range, and undesired radiation having another wavelength or another wavelength range; a support structure configured to support a patterning structure, the patterning structure being configured to impart the beam of radiation with a pattern in its cross-section; a substrate table configured to hold a substrate; and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate; wherein at least part of the lithographic apparatus, in use, includes a gas substantially transmissive for at least part of the desired radiation and substantially less transmissive for at least part of the undesired radiation.