公开(公告)号：US07468541B2

公开(公告)日：2008-12-23

申请号：US11224094

申请日：2005-09-13

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01L29/82

CPC分类号： G11C11/15 ,  H01L43/08

摘要： A magnetic random access memory includes a magnetic recording element which includes a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a nonmagnetic layer provided between the fixed layer and the recording layer, the recording layer having a first running portion, a first projecting portion and a second projecting portion, the first running portion which runs in a direction of axis of easy magnetization, the first and second projecting portions which project from two side surfaces of the first running portion, a mask layer which is arranged above the first running portion, and a first sidewall layer and a second sidewall layer which are formed on two side surfaces of the mask layer, respectively, and arranged on the first projecting portion and the second projecting portion, respectively.

摘要翻译： 磁性随机存取存储器包括磁记录元件，该磁记录元件包括其磁化方向固定的固定层，其磁化方向改变的记录层和设置在固定层和记录层之间的非磁性层，记录层具有第一运行 第一突出部和第二突出部，沿着容易磁化的轴线方向延伸的第一行进部，从第一行进部的两个侧面突出的第一和第二突出部， 布置在第一行进部分上方，分别形成在掩模层的两个侧表面上的第一侧壁层和第二侧壁层，分别布置在第一突出部分和第二突出部分上。

公开(公告)号：US07459759B2

公开(公告)日：2008-12-02

申请号：US11447131

申请日：2006-06-06

申请人： Yoshiaki Fukuzumi ,  Toshihiko Nagase

发明人： Yoshiaki Fukuzumi ,  Toshihiko Nagase

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  G11C11/5607

摘要： A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in which a part of a vertical magnetization film as a magnetic free layer is positioned in the gap and in which a vertical magnetization film as a magnetic pinned layer is positioned outside the gap.

摘要翻译： 在本发明的实施例中描述的磁性随机存取存储器包括导线，围绕导电线的软磁材料，设置在软磁材料的一部分中的间隙，以及磁阻元件，其中一部分 作为磁性自由层的垂直磁化膜位于间隙中，并且其中作为磁性固定层的垂直磁化膜位于间隙外部。

公开(公告)号：US20080158740A1

公开(公告)日：2008-07-03

申请号：US12037726

申请日：2008-02-26

申请人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Sumio Ikegawa ,  Yoshiaki Fukuzumi ,  Tatsuya Kishi

发明人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Sumio Ikegawa ,  Yoshiaki Fukuzumi ,  Tatsuya Kishi

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228

摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.

摘要翻译： 磁存储器件包括磁阻元件和第一布线层。 磁阻元件包括固定层，记录层和介于其间的非磁性层。 第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。 记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部 在与第二方向垂直的第三方向上的基部。 基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

公开(公告)号：US07163894B2

公开(公告)日：2007-01-16

申请号：US10927079

申请日：2004-08-27

申请人： Hiroyuki Nitta ,  Yoshiaki Fukuzumi ,  Yusuke Kohyama

发明人： Hiroyuki Nitta ,  Yoshiaki Fukuzumi ,  Yusuke Kohyama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/32134 ,  H01L21/7682 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/5329 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  Y10S438/927 ,  H01L2924/00

摘要： In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. A wiring layer is buried into the wiring pattern groove with a barrier metal film interposed therebetween. The barrier metal film is selectively removed from each sidewall portion of the wiring pattern groove. In other words, the barrier metal film is left only on the bottom of the wiring pattern groove. Thus, a damascene wiring layer having a hollow section whose dielectric constant is low between each sidewall of the wiring pattern groove and each side of the wiring layer can be formed in the semiconductor device.

公开(公告)号：US20060203540A1

公开(公告)日：2006-09-14

申请号：US11430891

申请日：2006-05-10

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/16

摘要： A semiconductor memory device includes memory cells, first wirings, a first current driver circuit, and a second current driver circuit. The memory cell includes a magneto-resistive element having a first ferromagnetic film, an insulating film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the insulating film. The first wiring is provided in close proximity to and insulated from the magneto-resistive element. The first current driver circuit supplies a first current to the first wiring in a write operation to produce a magnetic field around the magneto-resistive elements. The second current driver circuit supplies a second current between the first and second ferromagnetic films via the insulating film in a write and a read operation.

摘要翻译： 半导体存储器件包括存储器单元，第一布线，第一电流驱动器电路和第二电流驱动器电路。 存储单元包括具有第一铁磁膜，形成在第一铁磁膜上的绝缘膜和形成在绝缘膜上的第二铁磁膜的磁阻元件。 第一布线靠近并与磁阻元件绝缘提供。 第一电流驱动器电路在写入操作中向第一布线提供第一电流以在磁阻元件周围产生磁场。 第二电流驱动电路在写入和读取操作中经由绝缘膜在第一和第二铁磁性膜之间提供第二电流。

公开(公告)号：US06992921B2

公开(公告)日：2006-01-31

申请号：US10895138

申请日：2004-07-21

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/08

摘要： A magnetic random access memory includes a first write wiring line which runs in a first direction, a second write wiring line which has first and second regions run in the first and second directions, a magnetoresistive element formed between the first write wiring line and the first region, first and second yoke layers, the magnetoresistive element having a recording layer which has an easy axis of magnetization whose direction in a non-energized state tilts by 30° to 60° with respect to the first direction, first and second ferromagnetic layers which are formed from a ferromagnetic material whose direction of magnetization in the non-energized state is aligned to the first direction, and magnetically coupled to the recording layer, and first and second nonmagnetic layers formed between the recording layer and the first and second ferromagnetic layers, respectively.

摘要翻译： 磁性随机存取存储器包括沿第一方向延伸的第一写入布线，具有沿第一和第二方向延伸的第一和第二区域的第二写入布线;形成在第一写入布线和第一写入布线之间的磁阻元件 所述磁阻元件具有记录层，所述记录层具有相对于所述第一方向倾斜30°至60°的方向的易磁化磁化轴，第一和第二铁磁层， 由铁磁材料形成，其非通电状态的磁化方向与第一方向对准，并且磁耦合到记录层，以及形成在记录层与第一和第二铁磁层之间的第一和第二非磁性层， 分别。

公开(公告)号：US06972992B1

公开(公告)日：2005-12-06

申请号：US11000995

申请日：2004-12-02

申请人： Yoshiaki Fukuzumi ,  Toshihiko Nagase

发明人： Yoshiaki Fukuzumi ,  Toshihiko Nagase

IPC分类号： G11C11/15 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G11C11/15 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and a tunnel barrier layer arranged between the recording layer and the fixed layer, the fixed layer comprising an anti-ferromagnetic layer, a first ferromagnetic layer which is in contact with the anti-ferromagnetic layer, a second ferromagnetic layer which is magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a third ferromagnetic layer which is magnetically coupled with the second ferromagnetic layer by second magnetic coupling, a first nonmagnetic layer which is formed between the first and second ferromagnetic layers, and a second nonmagnetic layer which is formed between the second and third ferromagnetic layers and has a thickness different from a thickness of the first nonmagnetic layer.

摘要翻译： 磁性随机存取存储器包括具有记录层，固定层和布置在记录层和固定层之间的隧道势垒层的磁阻元件，该固定层包括反铁磁性层，第一铁磁层 与所述反铁磁层接触的第二铁磁层，通过第一磁耦合与所述第一铁磁层磁耦合的第三铁磁层，通过第二磁耦合与所述第二铁磁层磁耦合的第三铁磁层，第一非磁性层， 形成在第一和第二铁磁层之间，第二非磁性层形成在第二和第三铁磁层之间，并且具有不同于第一非磁性层的厚度的厚度。

公开(公告)号：US06970376B1

公开(公告)日：2005-11-29

申请号：US10899057

申请日：2004-07-27

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01F10/16 ,  G11B11/00 ,  G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  H01F10/3254 ,  H01L27/228

摘要： A magnetic random access memory includes first and second write wirings extended in first and second directions, a magneto-resistance element located between the first and second write wirings, a first yoke layer provided on a first outer surface and both sides of the first write wiring and being formed of a magnetic layer, and a second yoke layer provided on a second outer surface and both sides of the second write wiring and being formed of a magnetic layer, wherein the magneto-resistance element has a recording layer formed of a ferromagnetic substance and comprising a first surface and a second surface, a first ferromagnetic layer provided on the first surface, a second ferromagnetic layer provided on the second surface, a first nonmagnetic layer provided between the recording layer and the first ferromagnetic layer, and a second nonmagnetic layer provided between the recording layer and the second ferromagnetic layer.

摘要翻译： 磁性随机存取存储器包括在第一和第二方向上延伸的第一和第二写入布线，位于第一和第二写入布线之间的磁阻元件，设置在第一外部表面上的第一磁轭层和第一写入布线的两侧 并且由磁性层形成，第二磁轭层设置在第二写入配线的第二外表面和两侧，并且由磁性层形成，其中磁阻元件具有由铁磁性物质形成的记录层 并且包括第一表面和第二表面，设置在第一表面上的第一铁磁层，设置在第二表面上的第二铁磁层，设置在记录层和第一铁磁层之间的第一非磁性层，以及第二非磁性层 设置在记录层和第二铁磁层之间。

公开(公告)号：US06963099B2

公开(公告)日：2005-11-08

申请号：US10915511

申请日：2004-08-10

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08

摘要： A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first surface and a second surface. The second surface faces the magnetoresistance element and the first surface is opposite to it. The second surface is smaller in width than the first surface.

公开(公告)号：US06956270B2

公开(公告)日：2005-10-18

申请号：US10771548

申请日：2004-02-05

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.