公开(公告)号：US20110304510A1

公开(公告)日：2011-12-15

申请号：US12807585

申请日：2010-09-08

Applicant: Yu-Jen Wang ,  Wei-Bin Lee

Inventor： Yu-Jen Wang ,  Wei-Bin Lee

IPC: H01Q9/04 ,  H01Q1/24

CPC classification number: H01Q9/42 ,  H01Q1/243 ,  H01Q1/38

Abstract: A planar inverted-F antenna for use in a wireless network device comprises a connecting member and two radiators. The connecting member has at least one input end and at least one ground end. Each radiator has a first end portion perpendicularly connected to one of the two ends of the connecting member, and the two radiators are parallel and correspond in shape to each other. Each radiator further has an L-shaped notch and thus forms a barb. A second end portion of each radiator is bent to form an engaging end which is generally parallel to the connecting member and configured to fasten with a substrate of the wireless network device.

Abstract translation: 用于无线网络设备的平面倒F天线包括连接构件和两个散热器。 连接构件具有至少一个输入端和至少一个接地端。 每个散热器具有垂直地连接到连接构件的两个端部中的一个的第一端部部分，并且两个散热器的形状彼此平行并对应。 每个散热器还具有L形凹口，因此形成倒钩。 每个散热器的第二端部被弯曲以形成大致平行于连接构件的接合端，并且被配置成与无线网络设备的基板紧固。

公开(公告)号：US20110122674A1

公开(公告)日：2011-05-26

申请号：US12626092

申请日：2009-11-25

Applicant: CHUN-JUNG LIN ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

Inventor： CHUN-JUNG LIN ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

IPC: G11C11/22 ,  H01L29/82 ,  H01L21/28

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

Abstract translation: 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。

公开(公告)号：US07719882B2

公开(公告)日：2010-05-18

申请号：US11743453

申请日：2007-05-02

Applicant: Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

Inventor： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

Abstract translation: 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元的阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

公开(公告)号：US20100118603A1

公开(公告)日：2010-05-13

申请号：US12687608

申请日：2010-01-14

Applicant: Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

Inventor： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

IPC: G11C11/14 ,  H01L29/82

CPC classification number: G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.

Abstract translation: 本公开提供了一种非易失性存储器件。 存储器件包括具有固定磁化强度的第一磁性元件。 存储器件还包括具有非固定磁化强度的第二磁性元件。 存储器件还包括在第一和第二磁性元件之间的阻挡层。 单向电流源电耦合到第一和第二磁性元件。 当前源被配置为向第一和第二存储器元件提供第一电流。 第一电流具有第一电流密度并且处于第一方向。 电流源还被配置为向第一和第二磁性元件提供第二电流。 第二电流具有与第一电流密度不同的第二电流密度，并且处于第一方向。 第一和第二电流导致第二磁性元件的非固定磁化在基本上平行于第一磁性元件的固定磁化之间以及基本上反平行于第一磁性元件的固定磁化之间翻转。

公开(公告)号：US07443638B2

公开(公告)日：2008-10-28

申请号：US10907974

申请日：2005-04-22

Applicant: Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

Inventor： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

IPC: G11B5/39 ,  G11B5/33

CPC classification number: G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

Abstract: Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

Abstract translation: 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

公开(公告)号：US20080135957A1

公开(公告)日：2008-06-12

申请号：US11674581

申请日：2007-02-13

Applicant: Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

Inventor： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

Abstract: Disclosed herein is an improved memory device wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

Abstract translation: 这里公开了一种改进的存储装置，其中由常规着陆垫占据的面积显着地减小到常规着陆垫占据的面积的大约50％至10％。 这是通过从电池结构中移除着陆焊盘而实现的，而是形成导电通孔结构，其提供从结构中的存储器堆或器件到下金属层的电连接。 通过仅形成该通孔结构，而不是形成在着陆焊盘的任一侧上的分离的通孔，结构通孔结构从存储器堆叠到下金属层占据的总宽度大大减小，因此通孔结构和下面 金属层可以形成为更靠近存储器堆叠（或与堆叠相关联的导体），以便减小电池结构的整体宽度。

公开(公告)号：US20080100715A1

公开(公告)日：2008-05-01

申请号：US11966771

申请日：2007-12-28

Applicant: Shyang-Jye Chang ,  Yu-Jen Wang ,  Yi-Cheng Chen ,  Tai-Feng Wu

Inventor： Shyang-Jye Chang ,  Yu-Jen Wang ,  Yi-Cheng Chen ,  Tai-Feng Wu

IPC: H04N5/228

CPC classification number: A61K36/185 ,  H04N5/2253 ,  H04N5/23248

Abstract: Disclosed is an image-stabilization driving device including a first sliding member connected to an image sensor; a first piezoelectrical element for driving the first sliding member to move linearly along a first direction; a second sliding member connected to the first piezoelectrical element; and a second piezoelectrical element for driving the second sliding member to move linearly along a second direction intersecting with the first direction. The first and second piezoelectrical elements are adapted to drive the image sensor to move in a plane, thereby providing a structurally simple and miniaturized image-stabilization driving device.

Abstract translation: 公开了一种图像稳定驱动装置，包括连接到图像传感器的第一滑动部件; 用于驱动所述第一滑动构件沿着第一方向线性移动的第一压电元件; 连接到所述第一压电元件的第二滑动构件; 以及用于驱动所述第二滑动构件沿着与所述第一方向相交的第二方向线性移动的第二压电元件。 第一和第二压电元件适于驱动图像传感器在平面中移动，从而提供结构简单且小型化的图像稳定驱动装置。

公开(公告)号：US20080078578A1

公开(公告)日：2008-04-03

申请号：US11902028

申请日：2007-09-18

Applicant: Yu-Jen Wang ,  Wei-Pin Huang

Inventor： Yu-Jen Wang ,  Wei-Pin Huang

IPC: H01R4/00

CPC classification number: H01R31/005 ,  H01B11/125 ,  H01R24/62

Abstract: An integrated transmission cable includes a multi-core cable, a universal serial bus (USB) connector, a network connector and a common connector. The multi-core cable has a first core group and a second core group. The USB connector is electrically connected with a first end of the first core group. The network connector is electrically connected with a first end of the second core group. The common connector is electrically connected with second ends of the first core group and the second core group. A transmission system is also disclosed.

Abstract translation: 集成传输电缆包括多芯电缆，通用串行总线（USB）连接器，网络连接器和公共连接器。 多芯电缆具有第一核心组和第二核心组。 USB连接器与第一核心组的第一端电连接。 网络连接器与第二核心组的第一端电连接。 公共连接器与第一芯组和第二芯组的第二端电连接。 还公开了传输系统。

公开(公告)号：US20060233002A1

公开(公告)日：2006-10-19

申请号：US11093652

申请日：2005-03-30

Applicant: Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

Inventor： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

IPC: G11C19/08

CPC classification number: G11C11/16

Abstract: A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

Abstract translation: 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

公开(公告)号：US06824217B1

公开(公告)日：2004-11-30

申请号：US10663018

申请日：2003-09-16

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: A47C754

CPC classification number: A47C1/03 ,  B60N2/77

Abstract: An armrest assembly includes a lower part defining a lower chamber, and an upper part defining an upper chamber therein. An abutting member is disposed in the upper chamber. A cylinder-and-piston unit includes a cylinder extending into the upper chamber to abut against the abutting member, and a piston mounted securely in the lower chamber and telescopically extending into the cylinder. A locking member includes a spring-biased button projecting from the cylinder, extending through the abutting member and into the upper chamber, and pressible to move between a locked position, in which, the cylinder is locked by the locking member against axial movement relative to the piston, and an unlocked position, in which, the cylinder is axially movable relative to the piston.

Abstract translation: 扶手组件包括限定下室的下部和在其中限定上室的上部。 抵靠构件设置在上腔室中。 气缸和活塞单元包括延伸到上室中以抵靠抵接构件的气缸，以及牢固地安装在下室中并可伸缩地延伸到气缸内的活塞。 锁定构件包括从气缸突出的弹簧偏置按钮，延伸穿过邻接构件并进入上腔室，并且可压缩以在锁定位置之间移动，在锁定位置中，气缸被锁定构件锁定，从而抵抗相对于 活塞和解锁位置，其中气缸相对于活塞可轴向移动。