公开(公告)号：US06996492B1

公开(公告)日：2006-02-07

申请号：US10804826

申请日：2004-03-18

Applicant: Anne L. Testoni

Inventor： Anne L. Testoni

IPC: G01K11/30

CPC classification number: G01N23/2252

Abstract: Techniques for determining certain parameters of semiconductor specimens using X-ray spectroscopy are described. The invention can be used to determine parameters such as composition, dimensions, and density of semiconductor specimens. Specifically, an X-ray spectrum simulation algorithm is used to iteratively generate a theoretical X-ray spectrum for a semiconductor specimen having certain parameters. The iterative generation of theoretical X-ray spectrums continues until one of the theoretical X-ray spectrum closely matches the actual X-ray spectrum measured off of the specimen. In an alternative embodiment, this technique of generating theoretical X-ray spectrums can be used in combination with a pre-existing library of X-ray spectral signatures for semiconductor specimens having various parameters.

Abstract translation: 描述了使用X射线光谱确定半导体样品的某些参数的技术。 本发明可用于确定半导体样品的组成，尺寸和密度等参数。 具体地，使用X射线光谱模拟算法迭代地生成具有某些参数的半导体样本的理论X射线光谱。 理论X射线谱的迭代生成继续进行，直到理论X射线谱之一与测得的实际X射线光谱密切相关。 在替代实施例中，产生理论X射线光谱的技术可以与用于具有各种参数的半导体样本的X射线光谱特征的预先存在的文库结合使用。

公开(公告)号：US06977183B1

公开(公告)日：2005-12-20

申请号：US10199552

申请日：2002-07-18

Applicant: Tony DiBiase

Inventor： Tony DiBiase

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L22/20 ,  H01L22/34

Abstract: A process which addresses the problem of transient defects comprises first processing one or more test chips on a substrate to reveal one or more potential transient defects during subsequent processing of all of the chips on the substrate; identifying the exact locations of such potential transient defects on one or more chips of a silicon substrate; forming a file containing the coordinates of each potential transient defect on the chip; converting the file into a CAD image layer capable of displaying such potential transient defects; and displaying such potential transient defects superimposed over a CAD image of the actual circuit to permit visual inspection of the compound CAD image and to permit optional action to be taken in view of such potential transient defects. In another embodiment of the invention, the file containing the locations of the potential transient defects is transmitted to a metrology apparatus such as a critical dimension (CD) scanning electron microscope (SEM) which monitors the potential transient defect addresses during processing of the chip. The two embodiments of the invention may be practiced in the alternative or in combination with one another.

Abstract translation: 解决瞬态缺陷问题的过程包括首先处理衬底上的一个或多个测试芯片，以在衬底上的所有芯片的后续处理期间露出一个或多个潜在的瞬态缺陷; 识别硅衬底的一个或多个芯片上的这种潜在瞬态缺陷的确切位置; 形成包含芯片上每个潜在瞬态缺陷的坐标的文件; 将文件转换成能够显示这种潜在的瞬时缺陷的CAD图像层; 并且显示叠加在实际电路的CAD图像上的这种潜在的瞬时缺陷，以允许对复合CAD图像的目视检查，并且考虑到这种潜在的瞬时缺陷来允许采取可选择的动作。 在本发明的另一个实施例中，将包含潜在瞬变缺陷的位置的文件传送到诸如在芯片处理期间监视潜在瞬态缺陷地址的临界尺寸（CD）扫描电子显微镜（SEM）的计量装置。 本发明的两个实施例可以以替代方式或彼此组合来实践。

公开(公告)号：US06956658B2

公开(公告)日：2005-10-18

申请号：US10660984

申请日：2003-09-12

Applicant: Steven W. Meeks ,  Rusmin Kudinar

Inventor： Steven W. Meeks ,  Rusmin Kudinar

IPC: G01B11/06 ,  G01B11/30 ,  G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G11B5/84

CPC classification number: G01B11/303 ,  G01B11/065 ,  G01N21/211

Abstract: A system and method for performing a magnetic imaging, optical profiling, and measuring lubricant thickness and degradation, carbon wear, carbon thickness, and surface roughness of thin film magnetic disks and silicon wafers at angles that are not substantially Brewster's angle of the thin film (carbon) protective overcoat is provided. The system and method involve a focused optical light whose polarization can be switched between P or S polarization is incident at an angle to the surface of the thin film magnetic disk. This generates both reflected and scattered light that may be measured to determine various values and properties related to the surface of the disk, including identifying the Kerr-effect in reflected light for determination of point magnetic properties. In addition, the present invention can mark the position of an identified defect.

Abstract translation: 用于以基本上不是薄膜的布鲁斯特角的角度执行磁性成像，光学轮廓和测量润滑剂厚度和降解，碳磨损，碳厚度和薄膜磁盘和硅晶片的表面粗糙度的系统和方法（ 碳）保护罩。 该系统和方法涉及一种聚焦的光，其偏振可以在P或S之间切换，偏振以一定角度入射到薄膜磁盘的表面。 这产生可以测量的反射和散射光，以确定与盘的表面相关的各种值和性质，包括识别用于确定点磁性的反射光中的克尔效应。 此外，本发明可以标识所识别的缺陷的位置。

公开(公告)号：US06952653B2

公开(公告)日：2005-10-04

申请号：US10705059

申请日：2003-11-10

Applicant: Gabor D. Toth ,  David R. Bakker

Inventor： Gabor D. Toth ,  David R. Bakker

IPC: G01N21/95 ,  G06T7/00 ,  G01B5/28 ,  G06K9/00

CPC classification number: H01L22/20 ,  G01N21/9501 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/014

Abstract: Methods and apparatus for efficiently analyzing defects in-line on a wafer by wafer basis are provided. In general terms, embodiments of the present invention provide a simple interface for setting up the entire inspection and defect analysis process in a single set up procedure. The apparatus includes an inspection station for inspecting a specimen for potential defects and a review station for analyzing a sample of the potential defects to determine a classification of such potential defects. The apparatus further includes a computer system having an application interface operable to allow a user to set up the inspection station and the review station during a same setup phase so as to allow the inspection station and the review station to then operate automatically to provide defect information for one or more specimens based on the user set up.

Abstract translation: 提供了通过晶片来有效地分析晶片上的在线缺陷的方法和装置。 一般来说，本发明的实施例提供了用于在单个设置过程中建立整个检查和缺陷分析过程的简单界面。 该装置包括用于检查潜在缺陷的样本的检查站和用于分析潜在缺陷的样本的检查站，以确定这种潜在缺陷的分类。 该装置还包括具有应用接口的计算机系统，其可操作以允许用户在相同的建立阶段期间建立检查站和审查站，以便允许检查站和审查站自动地进行操作以提供缺陷信息 基于用户设置的一个或多个标本。

公开(公告)号：US06943350B2

公开(公告)日：2005-09-13

申请号：US10272467

申请日：2002-10-08

Applicant: Mehran Nasser-Ghodsi ,  Michael Cull

Inventor： Mehran Nasser-Ghodsi ,  Michael Cull

IPC: B68B3/12 ,  G01N23/00 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G21K7/00 ,  H01L21/66 ,  C23C15/00

CPC classification number: H01J37/3056 ,  H01J37/304 ,  H01J2237/18 ,  H01J2237/244 ,  H01J2237/245 ,  H01J2237/30466

Abstract: Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Abstract translation: 方法和装置正在提供检验试样。 调整电子束以在扫描目标区域时引起二次电子发射。 引入反应性物质以从扫描靶中蚀刻和去除材料和杂质。 剩余部件被抽空。 在一个示例中，使用激光器照射和面积以帮助去除具有差的蒸汽压力的残余组分。

公开(公告)号：US06897444B1

公开(公告)日：2005-05-24

申请号：US10702271

申请日：2003-11-06

Applicant: David L. Adler

Inventor： David L. Adler

IPC: G01N23/225 ,  G01Q30/02 ,  G01Q30/04 ,  H01J37/26 ,  H01J37/29 ,  H01J37/153

CPC classification number: H01J37/26 ,  G01N23/225 ,  H01J37/29 ,  H01J2237/24592 ,  H01J2237/2538 ,  H01J2237/2817

Abstract: One embodiment disclosed is a method of detecting defects in objects. A selected surface area of an object is inspected with a multi-pixel electron microscope, and first set of data is generated having signal values representing image content of each pixel thereof. Further selected surface area of the object is inspected with said multi-pixel electron microscope, and second set of data is generated having signal values representing image content of each pixel thereof. Corresponding portions of first and second sets of data are stored in memory. Misalignment between stored portions of the first and second sets of data is detected with resolution of a fraction of a pixel, and the stored portions of first and second sets of data are aligned using subpixel interpolation to correct the detected misalignment therebetween. Finally, corresponding subportions of the aligned portions of first and second sets of data are compared to detect differences therebetween.

Abstract translation: 公开的一个实施例是检测物体中的缺陷的方法。 用多像素电子显微镜检查物体的选择的表面积，并且生成具有表示其每个像素的图像内容的信号值的第一组数据。 用所述多像素电子显微镜检查物体的另外选择的表面积，并且生成具有表示其每个像素的图像内容的信号值的第二组数据。 第一和第二组数据的相应部分被存储在存储器中。 以分辨率为单位的像素的分辨率来检测第一和第二组数据的存储部分之间的对准，并且使用子像素插值来对齐第一组数据和第二组数据的存储部分，以校正其间检测到的不对准。 最后，比较第一和第二组数据的对准部分的相应子部分，以检测它们之间的差异。

公开(公告)号：US06879390B1

公开(公告)日：2005-04-12

申请号：US09636124

申请日：2000-08-10

Applicant: Damon F. Kvamme ,  Robert W. Walsh

Inventor： Damon F. Kvamme ,  Robert W. Walsh

IPC: G01N21/88 ,  G01N21/95 ,  G01N21/956 ,  G01N21/00

CPC classification number: G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676

Abstract: Disclosed in an optical inspection system for inspecting the surface of a substrate. The optical inspection system includes a light source for emitting an incident light beam along an optical axis and a first set of optical elements arranged for separating the incident light beam into a plurality of light beams, directing the plurality of light beams to intersect with the surface of the substrate, and focusing the plurality of light beams to a plurality of scanning spots on the surface of the substrate. The inspection system further includes a light detector arrangement including individual light detectors that correspond to individual ones of a plurality of reflected or transmitted light beams caused by the intersection of the plurality of light beams with the surface of the substrate. The light detectors are arranged for sensing the light intensity of either the reflected or transmitted light.

Abstract translation: 公开在用于检查基板表面的光学检查系统中。 光学检查系统包括用于沿光轴发射入射光束的光源和布置成将入射光束分离成多个光束的第一组光学元件，引导多个光束与表面相交 并且将多个光束聚焦到基板表面上的多个扫描点。 检查系统还包括光检测器装置，其包括对应于由多个光束与基板的表面相交引起的多个反射或透射光束中的各个的各个光检测器。 光检测器被布置用于感测被反射或透射的光的光强度。

公开(公告)号：US06862142B2

公开(公告)日：2005-03-01

申请号：US10072469

申请日：2002-02-06

Applicant: Steven R. Lange

Inventor： Steven R. Lange

IPC: G02B21/06 ,  G01N21/956 ,  G01Q10/00 ,  G01Q30/20 ,  G02B17/08 ,  G02B21/00 ,  G02B21/02 ,  G02B21/04 ,  G02B21/18 ,  G02B15/14 ,  G01N23/00 ,  G02B27/40 ,  G06K9/00

CPC classification number: G02B17/086 ,  G02B17/0808 ,  G02B17/0856 ,  G02B17/0892 ,  G02B21/0016 ,  G02B21/025 ,  G02B21/04 ,  G02B21/18 ,  G02B21/367

Abstract: Techniques for utilizing a microscope inspection system capable of inspecting specimens at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.

Abstract translation: 描述了利用能够以高生产率检查试样的显微镜检查系统的技术。 检查系统通过利用多于一个的检测器阵列和大的视场扫描半导体晶片的表面来实现更高的吞吐率。 显微镜检查系统也具有高放大能力，高数值孔径和大视场。 通过使用多于一个的检测器阵列，可以在横跨半导体晶片的每个扫描条纹期间检查晶片的更多的表面积。 显微镜检查系统被配置为具有更大的视野，使得可以适当地利用多个检测器阵列。 此外，使用反射和/或折射表面的特殊布置，以便将检测器阵列装配在检查系统的物理限制内。

公开(公告)号：US06861666B1

公开(公告)日：2005-03-01

申请号：US10282322

申请日：2002-10-17

Applicant: Kurt H. Weiner ,  Gaurav Verma ,  Peter D. Nunan ,  Indranil De

Inventor： Kurt H. Weiner ,  Gaurav Verma ,  Peter D. Nunan ,  Indranil De

IPC: G01R31/28 ,  G01R31/307 ,  H01L23/544 ,  H01L23/58

CPC classification number: H01L22/34 ,  G01R31/2884 ,  G01R31/307

Abstract: Disclosed is test structure that can be fabricated with minimal photolithography masking steps and in which defects may be localized to specific layers. Mechanisms for fabricating such test structures are also provided. In one embodiment, a semiconductor test structure suitable for a voltage contrast inspection is provided. The test structure includes one or more test layers corresponding to one or more product layers selected from a plurality of product layers of an integrated circuit (IC) product structure. The number of the selected one or more test layers is less than a total number of the plurality of product layers of the product structure, and the test layers include at least a first portion that is designed to have a first potential during the voltage contrast inspection and a second portion that is designed to have a second potential during the voltage contrast inspection. The first potential differs from the second potential. The selected one or more test layers which correspond to product layers are selected from the plurality of product layers such that defects found in the test layers of the test structure during the voltage contrast inspection represent a prediction of defects in the corresponding product structure.

Abstract translation: 公开了可以用最小光刻掩模步骤制造并且其中缺陷可以定位于特定层的测试结构。 还提供了用于制造这种测试结构的机构。 在一个实施例中，提供了适用于电压对比度检查的半导体测试结构。 测试结构包括对应于从集成电路（IC）产品结构的多个产品层中选择的一个或多个产品层的一个或多个测试层。 所选择的一个或多个测试层的数量小于产品结构的多个产品层的总数，并且测试层至少包括设计成在电压对比度检查期间具有第一电位的第一部分 以及被设计为在电压对比度检查期间具有第二电位的第二部分。 第一个潜力与第二个潜力不同。 所选择的一个或多个对应于产品层的测试层选自多个产品层，使得在电压对比检查期间在测试结构的测试层中发现的缺陷代表相应产品结构中的缺陷的预测。

公开(公告)号：US20040233442A1

公开(公告)日：2004-11-25

申请号：US10785731

申请日：2004-02-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Christopher F. Bevis ,  Paola Dececco ,  John Fielden ,  Noah Bareket ,  Kenneth P. Gross ,  Mark Ghinovker

IPC: G01B011/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system comprises any one or more of the following apparatus: an imaging reflectometer, an imaging spectroscopic reflectometer, a polarized spectroscopic imaging reflectometer, a scanning reflectometer system, a system with two or more reflectometers capable of parallel data acquisition, a system with two or more spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the reflectometer stage, imaging spectrometers, imaging system with wavelength filter, imaging system with long-pass wavelength filter, imaging system with short-pass wavelength filter, imaging system without wavelength filter, interferometric imaging system, imaging ellipsometer, a spectroscopic ellipsometer, a laser ellipsometer having a photoelastic modulator, an imaging spectroscopic ellipsometer, a scanning ellipsometer system, a system with two or more ellipsometers capable of parallel data acquisition, a system with two or more ellipsometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the ellipsometer stage, a Michelson interferometer, and a Mach-Zehnder interferometer, a Sagnac interferometer, a scanning angle of incidence system, a scanning azimuth angle system, a null first order differential reflectometer, a null first order differential polarized reflectometer.