Abstract:
hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from amides, imides and carbides of alkali metals and alkaline earth metals, as well as a silicon source and/or a boron source.
Abstract:
The present invention describes a diamond tool with diamond bonded chemically by a braze that contains either Cr, Mn, SI, or Al or mixtures or alloys thereof. The diamond tool is made by infiltrating the braze into a matrix metal that contains diamond in either form of grits or polycrystalline bodies.
Abstract:
A new PCD/PCBN tool and method for making the same involve the use of an intermediate layer of polycrystalline material between a substrate and an outer working layer. The intermediate layer is formulated to limit or prevent the amount of cobalt or other binders which may infiltrate the outer working layer and accelerate deterioration under high throughput conditions. In accordance with one aspect of the invention, the substrate is corrugate or rounded projections to both reduce stress and to decrease infiltration of cobalt through the polycrystalline structures. In accordance with another aspect of the invention, the bonding medium and/or binder agents in the intermediate layer may be selected to decrease mobility of cobalt and the like.
Abstract:
Superabrasive cutting elements, backed compacts and methods for their manufacture are disclosed wherein metal coated superabrasive particles are cemented under HPHT conditions. The superabrasives bond to the metal of the coating and the metal coatings of adjacent particles bond to each other forming a matrix. A binding aid with thermal expansion characteristics close to that of the superabrasive particle can be infiltrated through or otherwise mixed with the particles to assist in the bonding between the metal coatings and to fill in voids. Catalyst and non-catalyst binding aids can also be used. Uncoated, smaller superabrasive particles can be interstitially dispersed among the coated particles to increase the superabrasive concentration and can self bond to form a cemented/sintered structure. Tungsten is a preferred metal coating and silicon is a preferred binding/sintering aid. The superabrasive can be diamond, cubic boron nitride, boron doped diamond or crushed, sintered polycrystalline aggregates. The free-standing cutting element can have a brazeable layer and the compact can be backed with, for example, cemented tungsten carbide. Free-standing cutting elements can be thermally stable up to 1,200.degree. C. Backed compacts can be thermally stable up to 1,100.degree. C.
Abstract:
A process for preparing sintered polycrystalline CBN/ceramic conjoint masses comprises forming a mixture of GBN and one or more of a ceramic material or metal which reacts with BN to form a ceramic material, subjecting said mixture to a high pressure and a high temperature conditons for inducing conversion of said GBN to CBN and inducing conversion of any of said metal to its corresponding metal ceramic, and forming said CBN/ceramic conjoint mass. The mixture of GBN and ceramic material or metal can be formed by a process selected from the group consisting of chemical vapor deposition, sol gel techniques, polymer pyrolysis techniques, and combustion synthesis.
Abstract:
A hard sintered compact for tools is a sintered compact obtained by super-high pressure sintering of 45-75% by vol. of cubic boron nitride powder and the remaining proportion of binder powder. The binder includes 5-25% by wt. of Al and the remaining proportion of at least one species of compounds represented by (Hf.sub.1-z M.sub.z) C, where M denotes elements of IVa, Va and VIa groups in a periodic table except for Hf, and 0.ltoreq.z.ltoreq.0.3 is satisfied. Because of this composition, improvements are made in strength, wear resistance and heat resisting property of the binder, and a hard sintered compact for tools having excellent strength and excellent wear resistance can be obtained.
Abstract:
The present invention relates to a method for making a supported PCD or CBN compact comprising placing in an enclosure a cup assembly having a mass of diamond or CBN particles having a surface and the mass of cemented metal carbide having a surface, and optionally a catalyst for diamond (or optionally, CBN) recrystallization, said surfaces being in adjacency to form an interface. The enclosure then is subjected to a high pressure/high temperature process which results in diamond or CBN compacts preferably characterized by diamond-to-diamond or CBN-to-CBN bonding joined to a cemented carbide support at their respective surfaces. The supported compacts are recovered from the enclosure and cup assemblies and finished. The finished supported compacts in the enclosure exhibit non-planar bonded interface resulting in PCD or CBN compacts of substantially non-uniform thickness. The improvement in process of the present invention comprises said carbide mass surface being the mirror image of the finished PCD or CBN non-planar interface for making a finished supported compact of substantially uniform diamond or CBN compact thickness. Preferably, at least two compacts are produced in the process and the catalyst for diamond recrystallization is provided from the cemented metal carbide mass.
Abstract:
Disclosed is a process for fabricating a supported polycrystalline diamond or CBN bi-layer compact which comprises forming a sintered polycrystalline or CBN compact which preferably is a thermally-stable compact. A cemented carbide support is separately formed. The compact and the support then are mated with a layer of diamond or CBN crystals having the largest dimension of between about 30 and 500 micrometers interposed therebetween. A source of catalyst/sintering aid material is provided in association with the layer of interposed crystals. The entire assembly then is subjected to HP/HT conditions and for a time adequate for converting the diamond or CBN crystals into a polycrystalline diamond or CBN layer and for producing the bi-layer supported compact of the present invention.
Abstract:
A method is provided for producing large cubic boron nitride crystals having the size of 0.1 carat or larger. The method involves providing a reaction vessel which contains CBN seed material (32), a CBN source (26) separated from the seed material and sandwiched between two masses (22) (24) of solvent/catalyst for CBN synthesis which is capable of melting under CBN synthetic conditions, and contains sufficient hexagonal boron nitride to saturate the catalyst with boron nitride when molten, the separation of seed material and source material being such that under the operating conditions of CBN synthesis a temperature gradient is created between the seed material and the source material with the seed material being located at a point near the minimum value of temperature of the temperature gradient and the source material being located at a point near the maximum value of temperature of the temperature gradient, placing that reaction vessel in the reaction zone of a high temperature/high pressure apparatus and subjecting the contents of the reaction vessel to conditions of temperature and pressure in the CBN stable region of the boron nitride phase diagram for a period of at least several hours and not more than 24 hours.
Abstract:
A method for sintering a metal powder, a ceramic powder, or a mixture thereof accomplishes compact sintering of even a high melting substance by heating the powder at an elevated temperature for a short time under not less than 10,000 atmospheres of pressure. To attain the quick high-temperature heating under the ultrahigh pressure, a Thermit reaction is generated in an ultrahigh pressure generating apparatus which is provided with a gasket made of pyrophyllite and cylinders and anvils protected with heat insulators.For the purpose of preventing the Thermit reaction from inducing a reaction between the Thermit composition and the powder under treatment and the heater and ensuring electrical insulation of these components, barriers made of hexagonal boron nitride and/or tantalum are suitably disposed within the apparatus.