公开(公告)号：US07273764B2

公开(公告)日：2007-09-25

申请号：US11028370

申请日：2005-01-03

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: H01L21/00

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US20070181920A1

公开(公告)日：2007-08-09

申请号：US11724841

申请日：2007-03-16

Applicant: Crocifisso Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

Inventor： Crocifisso Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

IPC: H01L29/76

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

公开(公告)号：US07193256B2

公开(公告)日：2007-03-20

申请号：US10726005

申请日：2003-12-01

Applicant: Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

Inventor： Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

IPC: H01L29/76

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

Abstract translation: 描述了一种用于制造第一浓缩型半导体衬底的方法，至少包括掩埋绝缘腔，包括以下步骤：在半导体衬底上形成多个沟槽，在半导体衬底上形成表面层，以便 在表面上紧密地闭合形成与沟槽的表面 - 远端相对应的至少一个掩埋腔的多个沟槽。

公开(公告)号：US20060166393A1

公开(公告)日：2006-07-27

申请号：US11301032

申请日：2005-12-13

Applicant: Byeoung-ju Ha ,  Chang-seung Lee

Inventor： Byeoung-ju Ha ,  Chang-seung Lee

IPC: H01L21/00

CPC classification number: B81C1/0092 ,  B81B2201/0214 ,  B81B2201/0271 ,  B81B2201/058 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00952 ,  B81C2201/0115

Abstract: A method of manufacturing a MEMS structure including forming a porous layer having a predetermined thickness on the top surface of a substrate over an area where a cavity is to be formed; forming the cavity by etching the substrate below the porous layer; forming a membrane layer on the top surface to seal the cavity; and forming a structure on the upper side of the membrane layer. After forming a cantilever structure on the membrane layer and etching the membrane layer, a cantilever structure is produced in a floating state over the cavity. Also, at least one inlet hole and outlet hole can be formed in the porous layer and the membrane, thereby providing a sealed fluidic channel.

Abstract translation: 一种制造MEMS结构的方法，包括在要形成空腔的区域上的衬底的顶表面上形成具有预定厚度的多孔层; 通过在多孔层下方蚀刻基底来形成空腔; 在顶表面上形成膜层以密封空腔; 并在膜层的上侧形成结构。 在膜层上形成悬臂结构并蚀刻膜层之后，在空腔上以悬浮状态产生悬臂结构。 此外，可以在多孔层和膜中形成至少一个入口孔和出口孔，从而提供密封的流体通道。

公开(公告)号：US20060014392A1

公开(公告)日：2006-01-19

申请号：US11221228

申请日：2005-09-06

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L21/311

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

公开(公告)号：US06972447B2

公开(公告)日：2005-12-06

申请号：US10655839

申请日：2003-09-04

Applicant: Hubert Benzel ,  Hans Artmann ,  Frank Schaeffer

Inventor： Hubert Benzel ,  Hans Artmann ,  Frank Schaeffer

IPC: B81B3/00 ,  G01L9/00 ,  H01L29/84

CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C2201/0115 ,  B81C2201/0177 ,  G01L9/0042

Abstract: A semiconductor component for a semiconductor substrate, in which a first section and a second section are provided, and in which the pore structure of the first section differs from the pore structure of the second section.

Abstract translation: 一种用于半导体衬底的半导体部件，其中设置有第一部分和第二部分，并且其中第一部分的孔结构与第二部分的孔结构不同。

公开(公告)号：US06803637B2

公开(公告)日：2004-10-12

申请号：US10169464

申请日：2002-10-28

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B81B300

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.

Abstract translation: 一种具有由具有第一掺杂类型的衬底材料制成的衬底的微机械部件，设置在衬底中的微机械功能结构以及至少部分地覆盖微机械功能结构的覆盖层。 微机械功能结构具有由具有第二掺杂类型的基底材料制成的区域，所述区域至少部分地被空腔包围，并且覆盖层具有由基底材料制成的多孔层。

公开(公告)号：US20040155010A1

公开(公告)日：2004-08-12

申请号：US10474968

申请日：2004-03-31

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B29D011/00

CPC classification number: B81B3/0083 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178 ,  C25F3/12 ,  C25F3/14 ,  H01L21/306 ,  H01L21/3081

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented. For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract translation: 提出了在硅衬底（1）中制造光学透明区域（5,6）的简单和成本有效的可能性，其中通过在硅衬底的空腔上使用任何厚度和光学透明区域的两个光学透明区域 能够实施。 为此目的，首先对硅衬底（1）的至少一个特定区域（5,6）进行多孔蚀刻。 此后，硅衬底（1）的规定的多孔区域（5,6）被氧化。

公开(公告)号：US20040065932A1

公开(公告)日：2004-04-08

申请号：US10168584

申请日：2002-10-03

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: H01L021/00 ,  H01L029/82

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US06660648B1

公开(公告)日：2003-12-09

申请号：US09678418

申请日：2000-10-02

Applicant: Paul Charles Galambos ,  Randy J. Shul ,  Christi Gober Willison

Inventor： Paul Charles Galambos ,  Randy J. Shul ,  Christi Gober Willison

IPC: H01L21302

CPC classification number: B81C1/00158 ,  B81B2201/058 ,  B81B2201/10 ,  B81C2201/0115 ,  B81C2201/0132

Abstract: A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

Abstract translation: 已开发出一类新型半透膜及其制造技术。 通过适当蚀刻沉积的氮化硅层形成的这些膜是坚固的，易于制造的，并且与各种硅微加工技术相容。