公开(公告)号：US06568979B2

公开(公告)日：2003-05-27

申请号：US10012612

申请日：2001-12-12

Applicant: David S. Y. Hsu

Inventor： David S. Y. Hsu

IPC: H01J900

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US06525453B2

公开(公告)日：2003-02-25

申请号：US09846209

申请日：2001-05-02

Applicant: Huang Chung Cheng ,  Fu-Guo Tarntair

Inventor： Huang Chung Cheng ,  Fu-Guo Tarntair

IPC: H01J102

CPC classification number: H01L27/124 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L27/1214 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/952

Abstract: The present invention proposes a field emitting display, wherein a field emitting array is formed on a glass substrate. The field emitting array comprises a plurality of arrays of thin film transistors and a plurality of carbon nanotubes used as field emitting cathodes. The magnitude and stability of the field-emitted current of the carbon nanotubes are controlled by using the thin film transistors. The present invention has the characteristics of high quality, large area, and low cost.

公开(公告)号：US20030001489A1

公开(公告)日：2003-01-02

申请号：US09260987

申请日：1999-03-01

Inventor： AMMAR DERRAA

IPC: H01J001/62

CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels. In yet another embodiment, a series of column lines are formed over a substrate. A series of field emitter tip regions are formed and arranged into discrete pixels which are disposed in operable proximity to individual respective column lines. A series of resistor strips is formed and supported by the substrate. The resistor strips individually underlie respective individual series of field emitter tip regions. The individual resistor strips operably connect respective column lines and field emitter tip regions. At least one of the resistor strips operably connects its associated column line and at least two different discrete pixels. Other embodiments are described.

Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。 在另一个实施例中，在衬底上形成一系列列线。 一系列场发射器尖端区域形成并布置成离散的像素，这些离散像素设置成可操作地接近各个相应的列线。 一系列电阻条由衬底形成并支撑。 电阻带分别位于各个系列的场发射器尖端区域的下面。 各个电阻条可操作地连接相应的列线和场发射极尖端区域。 电阻条中的至少一个可操作地连接其相关联的列线和至少两个不同的离散像素。 描述其他实施例。

公开(公告)号：US20020163287A1

公开(公告)日：2002-11-07

申请号：US09846209

申请日：2001-05-02

Inventor： Huang Chung Cheng ,  Fu-Guo Tarntair

IPC: H01J001/02 ,  H01J063/04

CPC classification number: H01L27/124 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L27/1214 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/952

Abstract: The present invention proposes a field emitting display, wherein a field emitting array is formed on a glass substrate. The field emitting array comprises a plurality of arrays of thin film transistors and a plurality of carbon nanotubes used as field emitting cathodes. The magnitude and stability of the field-emitted current of the carbon nanotubes are controlled by using the thin film transistors. The present invention has the characteristics of high quality, large area, and low cost.

Abstract translation: 本发明提出一种场发射显示器，其中在玻璃基板上形成场发射阵列。 场发射阵列包括多个薄膜晶体管阵列和用作场发射阴极的多个碳纳米管。 通过使用薄膜晶体管来控制碳纳米管的场发射电流的大小和稳定性。 本发明具有质量高，面积大，成本低的特点。

公开(公告)号：US06445006B1

公开(公告)日：2002-09-03

申请号：US09361910

申请日：1999-07-27

Applicant: George R. Brandes ,  Xueping Xu

Inventor： George R. Brandes ,  Xueping Xu

IPC: H01L21365

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01J1/304 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/742 ,  Y10S977/776

Abstract: A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.

Abstract translation: 微电子或微机电装置，包括其上形成的基底和碳微纤维，其可用作该装置的电连接器或微机电（MEMS）装置的选择性平移部件。

公开(公告)号：US20020113536A1

公开(公告)日：2002-08-22

申请号：US10109847

申请日：2002-04-01

Inventor： Ammar Derraa

IPC: H01J001/02

CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels. In yet another embodiment, a series of column lines are formed over a substrate. A series of field emitter tip regions are formed and arranged into discrete pixels which are disposed in operable proximity to individual respective column lines. A series of resistor strips is formed and supported by the substrate. The resistor strips individually underlie respective individual series of field emitter tip regions. The individual resistor strips operably connect respective column lines and field emitter tip regions. At least one of the resistor strips operably connects its associated column line and at least two different discrete pixels. Other embodiments are described.

Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。 在另一个实施例中，在衬底上形成一系列列线。 一系列场发射器尖端区域形成并布置成离散的像素，这些离散像素设置成可操作地接近各个相应的列线。 一系列电阻条由衬底形成并支撑。 电阻带分别位于各个系列的场发射器尖端区域的下面。 各个电阻条可操作地连接相应的列线和场发射极尖端区域。 电阻条中的至少一个可操作地连接其相关联的列线和至少两个不同的离散像素。 描述其他实施例。

公开(公告)号：US20020096684A1

公开(公告)日：2002-07-25

申请号：US10092887

申请日：2002-03-07

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L031/0312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06398608B1

公开(公告)日：2002-06-04

申请号：US09723012

申请日：2000-11-27

Applicant: David A. Cathey, Jr. ,  John Lee

Inventor： David A. Cathey, Jr. ,  John Lee

IPC: H01J924

CPC classification number: H01J9/025 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract translation: 提供了一种制造具有改善的结漏电特性的场发射显示（FED）的方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成遮光元件。 光阻挡元件保护接点免受在显示屏上形成的光和在环境中产生的光的撞击。 因此，结的电气特性保持恒定，并且提高结漏电。 遮光元件可以形成为不透明的光吸收或光反射层。 此外，遮光元件可以被图案化以保护基板的预定区域并且可以提供诸如互连层的其它电路功能。

公开(公告)号：US20010040431A1

公开(公告)日：2001-11-15

申请号：US08826454

申请日：1997-03-27

Inventor： XUEPING XU ,  GEORGE R. BRANDES ,  CHRISTOPHER J. SPINDT ,  COLIN D. STANNERS ,  JOHN M. MACAULAY

IPC: H01J001/62 ,  H01J063/04

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US6163107A

公开(公告)日：2000-12-19

申请号：US37035

申请日：1998-03-09

Applicant: Shigeo Itoh ,  Takahiro Niiyama ,  Masaharu Tomita ,  Yoshitaka Kagawa ,  Akira Inoue ,  Junji Itoh ,  Seigo Kanemaru

Inventor： Shigeo Itoh ,  Takahiro Niiyama ,  Masaharu Tomita ,  Yoshitaka Kagawa ,  Akira Inoue ,  Junji Itoh ,  Seigo Kanemaru

IPC: H01J1/304 ,  G09G3/20 ,  G09G3/22 ,  H01J3/02 ,  H01J29/04 ,  H01J29/96 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J3/022 ,  G09G3/2011 ,  G09G3/22 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission cathode that can uniform the number of electrons emitted from each emitter and can prevent a line defect even when a gate electrode is electrically short-circuited with an emitter. The movement of electrons in a channel formed on the channel forming electrode is controlled by applying a positive voltage to the current control electrode, so that the current supplied from the cathode electrode to the emitter can be controlled. If the emitter is short-circuited with the gate electrode, the increased current density destroys the channel, so that the current supply to the emitter can be stopped.

Abstract translation: 场发射阴极可以均匀化从每个发射极发射的电子数，并且即使当栅极与发射极电短路时也可以防止线路缺陷。 通过向电流控制电极施加正电压来控制形成在沟道形成电极上的沟道中的电子的移动，从而可以控制从阴极供给到发射极的电流。 如果发射极与栅电极短路，则增加的电流密度会破坏通道，从而可以停止对发射极的电流供应。