公开(公告)号：US20080265379A1

公开(公告)日：2008-10-30

申请号：US11994406

申请日：2006-06-27

申请人： George R. Brandes ,  Robert P. Vaudo ,  Xueping Xu

发明人： George R. Brandes ,  Robert P. Vaudo ,  Xueping Xu

IPC分类号： H01L29/04

CPC分类号： H01S5/32341 ,  Y10S438/973

摘要： A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate (201). In an illustrative implementation, a laser diode is oriented on a GaN substrate (201) wherein the GaN substrate includes a GaN (0001) surface off-cut from the direction predominantly towards either the or the family of directions. For a off-cut substrate, a laser diode cavity (207) may be oriented along the direction parallel to lattice surface steps (202) of the substrate (201) in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For off-cut substrate, the laser diode cavity may be oriented along the direction orthogonal to lattice surface steps (207) of the substrate (201) in order to provide a cleave laser facet that is aligned with the surface lattice steps.

摘要翻译： 一种微电子组件，其中半导体器件结构定向地定位在离轴衬底（201）上。 在说明性实施例中，激光二极管定向在GaN衬底（201）上，其中GaN衬底包括从主要朝向<1120>或<11 00>的方向从<0001>方向偏离的GaN（0001） 家庭方向。 对于<11 20>截割基板，激光二极管空腔（207）可以沿着平行于基板（201）的格子表面台阶（202）的<100°方向取向，以便具有切割的激光刻面 这与表面晶格步骤正交。 对于<11 00>切割衬底，激光二极管腔可以沿着与衬底（201）的晶格表面台阶（207）正交的<100°方向取向，以便提供与 表面晶格步骤。

公开(公告)号：US06447604B1

公开(公告)日：2002-09-10

申请号：US09605195

申请日：2000-06-28

申请人： Jeffrey S. Flynn ,  George R. Brandes ,  Robert P. Vaudo ,  David M. Keogh ,  Xueping Xu ,  Barbara E. Landini

发明人： Jeffrey S. Flynn ,  George R. Brandes ,  Robert P. Vaudo ,  David M. Keogh ,  Xueping Xu ,  Barbara E. Landini

IPC分类号： C30B2514

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

摘要： A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

摘要翻译： III-V族氮化物同质外延微电子器件结构，其包括III-V族氮化物材料衬底上的III-V族同质外延层，例如独立性。 描述了各种处理技术，包括通过使用III族源材料和氮源材料通过VPE工艺沉积III-V族氮化物同质外延层，在相应的III-V族氮化物材料基板上形成III-V族氮化物同质外延层的方法 在包括约1至约105范围内的V / III比的工艺条件下，氮源材料分压在约1至约103托的范围内，生长温度在约500至约1250摄氏度的范围内 ，并且生长速率在约0.1至约500微米/小时的范围内。 III-V族氮化物同质外延微电子器件结构有用地用于诸如UV LED，高电子迁移率晶体管等的器件应用中。

公开(公告)号：US20110089536A1

公开(公告)日：2011-04-21

申请号：US12974332

申请日：2010-12-21

申请人： George R. Brandes ,  Robert P. Vaudo ,  Xueping Xu

发明人： George R. Brandes ,  Robert P. Vaudo ,  Xueping Xu

IPC分类号： H01L29/38

CPC分类号： H01S5/32341 ,  Y10S438/973

摘要： A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the direction predominantly towards either the or the family of directions. For a off-cut substrate, a laser diode cavity may be oriented along the direction parallel to lattice surface steps of the substrate in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For a off-cut substrate, the laser diode cavity may be oriented along the direction orthogonal to lattice surface steps of the substrate in order to provide a cleaved laser facet that is aligned with the surface lattice steps.

摘要翻译： 一种微电子组件，其中半导体器件结构定向地定位在离轴衬底上。 在说明性实施方案中，激光二极管定向在GaN衬底上，其中GaN衬底包括从（0001）方向偏离的GaN（0001）表面，主要朝向<11 20>或<1100> 方向。 对于<11 20>截割衬底，激光二极管空腔可以沿着平行于衬底的晶格表面台阶的<100°方向取向，以便具有与表面晶格步骤正交的切割的激光刻面。 对于<100>切割衬底，激光二极管空腔可以沿着与衬底的晶格表面台阶正交的<100°方向取向，以便提供与表面晶格步骤对准的切割的激光刻面。

公开(公告)号：US20080199649A1

公开(公告)日：2008-08-21

申请号：US12102275

申请日：2008-04-14

申请人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

发明人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

IPC分类号： B32B3/02 ,  C01B21/00 ,  C01B21/06 ,  C01B21/072 ,  H01L31/00 ,  B32B9/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  Y10T83/0524 ,  Y10T428/31

摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割 在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2μmAFM扫描测量的RMS粗糙度小于1nm，位错密度小于 3E6厘米-2。 可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。 在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

公开(公告)号：US06445006B1

公开(公告)日：2002-09-03

申请号：US09361910

申请日：1999-07-27

申请人： George R. Brandes ,  Xueping Xu

发明人： George R. Brandes ,  Xueping Xu

IPC分类号： H01L21365

CPC分类号： H01J9/025 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01J1/304 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/742 ,  Y10S977/776

摘要： A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.

摘要翻译： 微电子或微机电装置，包括其上形成的基底和碳微纤维，其可用作该装置的电连接器或微机电（MEMS）装置的选择性平移部件。

公开(公告)号：US5872422A

公开(公告)日：1999-02-16

申请号：US575485

申请日：1995-12-20

申请人： Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

发明人： Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

IPC分类号： H01J1/304 ,  H01J1/30

CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/939

摘要： Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.

摘要翻译： 包含冷阴极的电子场发射器件（冷阴极），真空微电子器件和场发射显示器及其制造和使用方法。 更具体地，包括直接生长在基底材料上的电子发射结构的冷阴极器件。 本发明还涉及用于制造场致发射器件的图案化前体衬底及其制造方法，并且还涉及直接在衬底上直接催化生长其它电子结构，例如膜，锥体，圆柱体，金字塔等。

公开(公告)号：US08378463B2

公开(公告)日：2013-02-19

申请号：US12974332

申请日：2010-12-21

申请人： George R. Brandes ,  Robert P. Vaudo ,  Xueping Xu

发明人： George R. Brandes ,  Robert P. Vaudo ,  Xueping Xu

IPC分类号： H01L29/04

CPC分类号： H01S5/32341 ,  Y10S438/973

摘要： A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the direction predominantly towards either the or the family of directions. For a off-cut substrate, a laser diode cavity may be oriented along the direction parallel to lattice surface steps of the substrate in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For a off-cut substrate, the laser diode cavity may be oriented along the direction orthogonal to lattice surface steps of the substrate in order to provide a cleaved laser facet that is aligned with the surface lattice steps.

摘要翻译： 一种微电子组件，其中半导体器件结构定向地定位在离轴衬底上。 在说明性实施方案中，激光二极管定向在GaN衬底上，其中GaN衬底包括从（0001）方向偏离的GaN（0001）表面，主要朝向<11 20>或<1100> 方向。 对于<11 20>截割衬底，激光二极管空腔可以沿着平行于衬底的晶格表面台阶的<100°方向取向，以便具有与表面晶格步骤正交的切割的激光刻面。 对于<100>切割衬底，激光二极管空腔可以沿着与衬底的晶格表面台阶正交的<100°方向取向，以便提供与表面晶格步骤对准的切割的激光刻面。

公开(公告)号：US06680489B1

公开(公告)日：2004-01-20

申请号：US09557165

申请日：2000-04-25

申请人： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

发明人： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC分类号： H01L310312

CPC分类号： H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

摘要： Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

摘要翻译： 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06379210B2

公开(公告)日：2002-04-30

申请号：US09727023

申请日：2000-11-29

申请人： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

发明人： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC分类号： H01J902

CPC分类号： H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

摘要： A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

摘要翻译： 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US06356014B2

公开(公告)日：2002-03-12

申请号：US08826454

申请日：1997-03-27

申请人： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

发明人： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC分类号： H01J130

CPC分类号： H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

摘要： A cathode structure suitable for a flat-panel display contains an emitter layer (213) divided into emitter lines, a plurality of electron emitters (229, 239, or 230) situated over the emitter lines, and a gate layer (215A) having an upper surface spaced largely above the electron emitters. The gate layer has a plurality of gate holes (215B) each corresponding to one of the electron emitters. The cathode structure further includes a carbon-containing layer (340, 240, or 241) coated over the electron emitters and directly on at least part of the upper surface of the gate layer such that at least part of the carbon-containing layer extending along and above the gate layer is exposed.

摘要翻译： 适用于平板显示器的阴极结构包含分为发射极线的发射极层（213），位于发射极线之上的多个电子发射体（229,239或230），以及栅极层（215A），具有 上表面大大高于电子发射体。 栅极层具有多个对应于一个电子发射体的栅极孔（215B）。 阴极结构还包括涂覆在电子发射体上并直接位于栅极层的上表面的至少部分上的含碳层（340,240或241），使得至少部分含碳层沿着 并且栅极层上方露出。