公开(公告)号：US20080067437A1

公开(公告)日：2008-03-20

申请号：US11678244

申请日：2007-02-23

申请人： Masahiko OKUNUKI ,  Haruhito Ono ,  Shinan Wang ,  Kenji Tamamori

发明人： Masahiko OKUNUKI ,  Haruhito Ono ,  Shinan Wang ,  Kenji Tamamori

IPC分类号： H01J37/08

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/047 ,  H01J37/3174 ,  H01J2237/0435 ,  H01J2237/31732 ,  H01J2237/31744

摘要： A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.

摘要翻译： 一种带电波束处理装置，包括多透光束光学系统，其通过透镜会聚多个带电波束，并且通过偏转器偏转所述多个带电波束以在处理室中照射待处理物体;以及供应单元， 进入处理室的气体包括：气体控制器，其基于处理条件控制供给到处理室中的气体;以及光束控制器，其基于处理条件控制多个带电束，其中，至少一个 在物体的表面上的材料沉积和对象的表面的蚀刻形成结构。

公开(公告)号：US20070187622A1

公开(公告)日：2007-08-16

申请号：US11657467

申请日：2007-01-25

申请人： Osamu Nagano

发明人： Osamu Nagano

IPC分类号： H01J37/08

CPC分类号： H01J37/3056 ,  H01J2237/31744

摘要： A charged particle beam apparatus includes a column, the column having: a charged particle beam source which generates a charged particle beam to apply a charged particle beam to the surface of a substrate, a position where the charged particle beam is irradiated to the substrate being a beam position; and a gas mechanism provided in proximity to the substrate to supply a gas to the surface of the substrate, the gas mechanism having an opening which permits passage of the charged particle beam, a gas supply opening which locally injects the gas to the vicinity of the beam position, and a gas exhaust opening which exhausts the injected gas in the vicinity of the beam position to exhaust the gas.

摘要翻译： 带电粒子束装置包括柱，所述柱具有：带电粒子束源，其产生带电粒子束以将带电粒子束施加到衬底的表面，将带电粒子束照射到衬底的位置为 梁位置; 以及气体机构，其设置在所述基板附近，以将气体供应到所述基板的表面，所述气体机构具有允许所述带电粒子束通过的开口;气体供给开口，其将所述气体局部地喷射到所述基板的附近; 射束位置和排气口，其排出喷射气体附近的喷射气体以排出气体。

公开(公告)号：US07256405B2

公开(公告)日：2007-08-14

申请号：US11037093

申请日：2005-01-19

申请人： Mamoru Nakasuji ,  Takao Kato ,  Tohru Satake ,  Kenji Terao ,  Takeshi Murakami ,  Nobuharu Noji

发明人： Mamoru Nakasuji ,  Takao Kato ,  Tohru Satake ,  Kenji Terao ,  Takeshi Murakami ,  Nobuharu Noji

IPC分类号： H01J37/30 ,  G21K5/10

CPC分类号： H01J37/18 ,  H01J2237/188 ,  H01J2237/31744

摘要： An object of the present invention is to provide a sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method, which can reduce an edge roughness in a repaired pattern and also can provide the repairing of a sample by applying an electron beam-assisted etching or an electron beam-assisted deposition. There is provided a sample repairing method comprising: (a) a step of focusing an electron beam by an objective lens to irradiate a sample: (b) a step of supplying a reactive gas onto an electron beam irradiated surface of said sample: (c) a step of selectively scanning a pattern to be repaired on said sample with the electron beam so as to repair said pattern by applying an etching or a deposition; and (d) a step of providing a continuous exhausting operation by means of a differential exhaust system arranged in said objective lens so as to prevent the reactive gas supplied onto said electron beam irradiated surface from flowing toward an electron gun side.

摘要翻译： 本发明的目的是提供一种使用相同方法的样品修复装置，样品修复方法和装置制造方法，其可以减少修复图案中的边缘粗糙度，并且还可以通过应用 电子束辅助蚀刻或电子束辅助沉积。 提供了一种样品修复方法，包括：（a）通过物镜聚焦电子束以照射样品的步骤：（b）将反应性气体供应到所述样品的电子束照射表面上的步骤：（c ）通过电子束选择性地扫描所述样品上要修复的图案以通过施加蚀刻或沉积来修复所述图案的步骤; 以及（d）通过布置在所述物镜中的差动排气系统提供连续排气操作以防止供应到所述电子束照射表面上的反应性气体朝向电子枪侧流动的步骤。

公开(公告)号：US20070158590A1

公开(公告)日：2007-07-12

申请号：US11542434

申请日：2006-10-03

申请人： Ryoji Hagiwara ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai

发明人： Ryoji Hagiwara ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai

IPC分类号： H01J37/08

CPC分类号： G03F1/74 ,  H01J2237/31744 ,  H01J2237/31749

摘要： There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.

摘要翻译： 提供了一种聚焦离子束处理方法，其中当用离子束照射和处理工件的表面时，对工件的损伤最小化。 该方法包括以下步骤：在离子源和工件之间产生加速电压; 聚焦离子源发射的离子束; 并将离子束施加到预定的处理位置以处理工件的表面。 在该过程中，由加速电压产生的离子束的能级设定在从1keV至小于20keV的范围内。

公开(公告)号：US20070114454A1

公开(公告)日：2007-05-24

申请号：US11586190

申请日：2006-10-25

申请人： Tomokazu Kozakai ,  Masashi Muramatsu ,  Ryoji Hagiwara

发明人： Tomokazu Kozakai ,  Masashi Muramatsu ,  Ryoji Hagiwara

IPC分类号： A61N5/00

CPC分类号： B23K15/02 ,  B23K15/0013 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/31744 ,  H01J2237/31749

摘要： After a scan area for observing or processing a mask is set, a computer of the charged particle beam apparatus determines a plurality of scan lines in the scan area by the following steps of: setting a scan line along the outer circumference of the scan area; determining a scan line inside and along the thus set scan line; determining a scan line inside and along the thus determined scan line; and repeating the step of determining a scan line. After the scan lines are determined, the computer controls a scanning circuit to apply an ion beam to the scan lines while thinning out scan lines and/or pixels.

摘要翻译： 在设置用于观察或处理掩模的扫描区域之后，带电粒子束装置的计算机通过以下步骤确定扫描区域中的多条扫描线：沿着扫描区域的外周设置扫描线; 沿着这样设置的扫描线确定扫描线; 沿着这样确定的扫描线确定扫描线; 以及重复确定扫描线的步骤。 在扫描线被确定之后，计算机控制扫描电路以将扫描线施加离子束同时减少扫描线和/或像素。

公开(公告)号：US20060284112A1

公开(公告)日：2006-12-21

申请号：US11441016

申请日：2006-05-26

申请人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

发明人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

IPC分类号： G21G5/00

CPC分类号： H01J37/3056 ,  H01J2237/006 ,  H01J2237/31744 ,  H01J2237/31745

摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

公开(公告)号：US07060196B2

公开(公告)日：2006-06-13

申请号：US10678438

申请日：2003-10-03

申请人： Vladimir V. Makarov ,  Theodore R. Lundquist

发明人： Vladimir V. Makarov ,  Theodore R. Lundquist

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： C23F4/00 ,  H01J37/3053 ,  H01J2237/3114 ,  H01J2237/31744 ,  H01L21/32131

摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.

摘要翻译： 公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法 电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子 ，溴或碘。 在一个实施方案中，前体包括硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基环四硅氧烷中的至少一种。 还公开了该方法的产品。

公开(公告)号：US20060097194A1

公开(公告)日：2006-05-11

申请号：US10543843

申请日：2004-02-16

申请人： Kazuo Aita ,  Osamu Takaoka ,  Tomokazu Kozakai

发明人： Kazuo Aita ,  Osamu Takaoka ,  Tomokazu Kozakai

IPC分类号： H01J37/08

CPC分类号： H01J37/265 ,  H01J37/28 ,  H01J2237/244 ,  H01J2237/24475 ,  H01J2237/2487 ,  H01J2237/2826 ,  H01J2237/31744 ,  H01J2237/31749

摘要： When scanning by an ion beam in advance an area 24 including a reference hole 23 formed at a position other than the area to be processed 25 of a light-shielding film 21 on a glass substrate 22, a secondary ion signal of the same atom as the incident ions injected into the substrate is detected instead of detecting the secondary ion signal of the atoms included in the base film, and the position 23 of the hole is stored. Then, the area 24 including the hole formed during the processing is scanned and the secondary ion signal of the same atom as the incident ions is detected to determine the current position 26 of the hole, the position of the hole obtained by the previous detection and the current position of the hole are compared, and the amount of shift of the position of the hole is determined. This shifte amount is regarded as the drift amount.

摘要翻译： 当预先通过离子束扫描包括形成在玻璃基板22上的遮光膜21的除被处理区域25以外的位置的基准孔23的区域24时，具有相同原子的二次离子信号 检测注入到基板中的入射离子，而不是检测基膜中包含的原子的二次离子信号，并且存储孔的位置23。 然后，扫描包括在处理过程中形成的孔的区域24，并且检测与入射离子相同的原子的二次离子信号，以确定孔的当前位置26，通过先前检测获得的孔的位置，以及 比较孔的当前位置，并确定孔的位置的移动量。 该移位量被认为是漂移量。

公开(公告)号：US06926935B2

公开(公告)日：2005-08-09

申请号：US10607814

申请日：2003-06-27

申请人： Jason Harrison Arjavac ,  Liang Hong ,  Henri Lezec ,  Craig Matthew Henry ,  John Anthony Notte, IV

发明人： Jason Harrison Arjavac ,  Liang Hong ,  Henri Lezec ,  Craig Matthew Henry ,  John Anthony Notte, IV

IPC分类号： C23C16/48 ,  C23C16/04 ,  H01J37/317 ,  H01L21/302 ,  C23C14/30

CPC分类号： C23C16/486 ,  C23C16/047 ,  C23C16/487 ,  H01J37/3178 ,  H01J2237/3142 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31744

摘要： The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface. In this way, materials can be deposited onto a the target surface at a suitably high rate without having to expose the target surface, itself, to the beam being used to perform the material deposition. In another embodiment, the beam is directed onto a separate electron generating surface (preferably one that has a relatively high secondary electron emission coefficient) proximal to the target surface for generating the electrons to deposit the deposition material onto the target surface.

摘要翻译： 本发明提供了使用带电粒子（例如离子，电子）或用于产生二次电子以在气体沉积材料中产生沉积的光束实现基本上无损材料沉积的方法。 除其他之外，一些方法可以用于以令人满意的生产量沉积半导体特征上的保护层，而不显着改变特征，从而保留其用于精确测量。 在一个实施例中，光束被引导到邻近目标表面但不在其内的电子源表面上。 光束在电子 - 源表面上被扫描，导致二次电子从电子 - 源表面发射并进入目标表面上的区域与沉积气体相互作用，以将期望量的材料沉积到目标表面上。 以这种方式，可以以适当高的速率将材料沉积到目标表面上，而不必将目标表面本身暴露于用于进行材料沉积的光束。 在另一个实施例中，光束被引导到靠近目标表面的单独的电子产生表面（优选具有相对高的二次电子发射系数），用于产生电子以将沉积材料沉积到目标表面上。

公开(公告)号：US20050167614A1

公开(公告)日：2005-08-04

申请号：US11048962

申请日：2005-02-02

申请人： Takashi Kaito

发明人： Takashi Kaito

IPC分类号： A61N5/00 ,  G21G5/00 ,  G21K5/10 ,  H01J37/305 ,  H01J37/317

CPC分类号： H01J37/3056 ,  H01J2237/31744

摘要： There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.

摘要翻译： 提供了一种气体喷射喷嘴，其适于使得通过在梁1B的一侧中设置有槽状切口结构的事实在梁的使用中使用的气枪的喷嘴尖端部分中飞行 辅助沉积或光束辅助蚀刻，光束IB可以穿过凹口结构的内部，以及具有气体喷射喷嘴11的带电粒子束装置以及工作方法。