公开(公告)号：US20090008245A1

公开(公告)日：2009-01-08

申请号：US12023588

申请日：2008-01-31

Applicant: Yasuhiro Yamakoshi ,  Kenichi Mogaki

Inventor： Yasuhiro Yamakoshi ,  Kenichi Mogaki

IPC: C23C14/00

CPC classification number: H01J37/3435 ,  C23C14/3407 ,  H01J37/3255 ,  H01J37/32559 ,  H01J37/3414 ,  H01J37/3426 ,  Y10T428/12465

Abstract: A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation.

Abstract translation: 一种用于将磁性物体靶材连接到板厚变化较小的背板的方法，其特征在于具有以下步骤：在保持平坦度的同时将磁性物体目标物连接到铝板上，连接与铝板连接的磁性物体靶 同时保持平坦度，并且研磨铝板，从而可以通过相对简单的操作来保持磁性物体靶的平坦度，直到磁性物体靶与背板连接。

公开(公告)号：US20080236754A1

公开(公告)日：2008-10-02

申请号：US12056567

申请日：2008-03-27

Applicant: Chishio KOSHIMIZU

Inventor： Chishio KOSHIMIZU

IPC: C23C16/505 ,  C23F1/02

CPC classification number: H01J37/32559 ,  H01J37/32091 ,  H01J2237/022 ,  H01L21/67069

Abstract: A plasma processing apparatus, which generates a plasma by a radio frequency discharge in a processing chamber, includes a first member having a first front surface facing the plasma, and a first mating surface extending from the first front surface; and a second member having a second front surface that forms an angled portion together with the first front surface of the first member in a manner to face the plasma, and a second mating surface facing the first mating surface of the first member with a gap therebetween. In the angled portion, an opening portion of gap and an inner portion extending from the opening portion to at least an intermediate location of the gap are oriented along an extended straight line that bisects an angle between the first front surface of the first member and the second front surface of the second member.

Abstract translation: 一种等离子体处理装置，其通过处理室中的射频放电产生等离子体，包括具有面向等离子体的第一前表面的第一构件和从第一前表面延伸的第一配合表面; 以及具有第二前表面的第二构件，所述第二前表面以与所述等离子体相对的方式与所述第一构件的所述第一前表面一起形成成角度的部分，以及面对所述第一构件的所述第一配合表面的第二配合表面，其间具有间隙 。 在倾斜部分中，间隙的开口部分和从开口部分延伸到间隙的至少中间位置的内部部分沿着延伸的直线定向，该直线将第一部件的第一前表面和 第二构件的第二前表面。

公开(公告)号：US20080202688A1

公开(公告)日：2008-08-28

申请号：US11689318

申请日：2007-03-21

Applicant: Robert Wu ,  Tuqiang NI

Inventor： Robert Wu ,  Tuqiang NI

IPC: H01L21/306 ,  C23C16/00 ,  H05H1/24

CPC classification number: H01J37/32541 ,  C23C16/325 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32559

Abstract: A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber.

Abstract translation: 用于电容耦合等离子体室的喷头，由CVD SiC涂覆的低电阻体积层制成。 体积小的电阻率材料可以是例如石墨，碳化硅（SiC），转化石墨，SiC + C等。烧结的SiC可以用作涂覆有CVD SiC的主体材料，以提供适合使用的喷头 在电容耦合等离子体室中。

公开(公告)号：US07331307B2

公开(公告)日：2008-02-19

申请号：US11055058

申请日：2005-02-11

Applicant: Daisuke Hayashi

Inventor： Daisuke Hayashi

IPC: C23C16/00 ,  C23C16/50 ,  C23C16/503 ,  H01L21/306 ,  H01L21/3065

CPC classification number: C23C4/12 ,  C23C28/321 ,  C23C28/3455 ,  H01J37/32009 ,  H01J37/32559 ,  H01L21/67069

Abstract: A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating ceramic and a metallic intermediate layer provided between the basic material and the thermally sprayed film for increasing a bonding force therebetween, wherein the thermally sprayed film side of the member is exposed to a high frequency plasma atmosphere and the electrode is intended to form a high frequency plasma on the side of the thermally sprayed film. The basic material includes a base portion made of a conductive material and a dielectric portion provided to include a part of a surface of the basic material. Further, the intermediate layer is comprised of a plurality of island-shaped parts isolated from each other.

Abstract translation: 热喷涂部件或电极包括碱性材料，形成在基材表面上的热喷涂膜，所述热喷涂膜由绝缘陶瓷和设置在所述基材和所述热喷涂膜之间的金属中间层 为了增加它们之间的结合力，其中该部件的热喷涂膜侧暴露于高频等离子体气氛中，该电极旨在在该热喷涂膜一侧上形成一高频等离子体。 基本材料包括由导电材料制成的基部和设置成包括基材的表面的一部分的电介质部分。 此外，中间层由彼此隔离的多个岛状部件组成。

公开(公告)号：US07288166B2

公开(公告)日：2007-10-30

申请号：US10663646

申请日：2003-09-17

Applicant: Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

Inventor： Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32192 ,  H01J37/321 ,  H01J37/32559 ,  H01J37/32623 ,  H01J37/32706

Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.

Abstract translation: 一种用于制造半导体器件的等离子体处理设备包括：用于向待处理衬底施加偏压功率的设备和与衬底相邻的材料;用于调节施加到该材料上的偏置功率的馈电阻抗的设备;以及用于 将所述偏置功率的馈送阻抗调整到所述衬底上的多个位置，以使得在所述衬底的表面内使等离子体投射到所述衬底的电子均匀。

公开(公告)号：US20070012657A1

公开(公告)日：2007-01-18

申请号：US11525102

申请日：2006-09-22

Applicant: Robert O'Donnell ,  Christopher Chang ,  John Daugherty

Inventor： Robert O'Donnell ,  Christopher Chang ,  John Daugherty

IPC: C30B33/00 ,  C23F1/00 ,  H01L21/306 ,  B44C1/22

CPC classification number: H01J37/32467 ,  H01J37/32477 ,  H01J37/32559

Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.

Abstract translation: 等离子体室的耐腐蚀组分包括液晶聚合物。 在优选的实施方案中，液晶聚合物（LCP）设置在具有阳极氧化或非阳极氧化表面的铝组分上。 液晶聚合物也可以提供在氧化铝组分上。 液晶聚合物可以通过诸如等离子喷涂的方法沉积。 液晶聚合物也可以被提供为预成型片或适于覆盖反应室暴露表面的其它形状。 此外，反应器组分可以通过从液晶聚合物的固体块中加工组分或从聚合物模塑组分而完全由液晶聚合物制成。 液晶聚合物可以含有增强填料如玻璃或矿物填料。

公开(公告)号：US20060137610A1

公开(公告)日：2006-06-29

申请号：US11237997

申请日：2005-09-28

Applicant: Yu Yoshizaki ,  Ryu Nakano

Inventor： Yu Yoshizaki ,  Ryu Nakano

IPC: C23C16/00 ,  H01L21/306

CPC classification number: C23C16/325 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

Abstract: A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.

Abstract translation: 一种等离子体处理装置，包括：反应室; 设置在所述反应室内的用于在其间产生等离子体的两个电极，其中所述电极中的至少一个具有至少一个气体入口孔，通过所述气体入口孔将气体引入所述反应室中; 以及连接到气体入口孔的气体入口管，用于将气体引入反应室。 进气管接地并与气体入口孔绝缘，其中绝热构件放置在气体入口管内和气体入口孔内。

公开(公告)号：US06900592B2

公开(公告)日：2005-05-31

申请号：US10288313

申请日：2002-11-05

Applicant: Erich Kunhardt ,  Kurt Becker

Inventor： Erich Kunhardt ,  Kurt Becker

IPC: H01J20060101 ,  H01J7/24 ,  H01J17/00 ,  H01J17/04 ,  H01J37/32 ,  H01J61/28 ,  H05H1/24 ,  H05H1/46

CPC classification number: H01J37/32018 ,  H01J17/04 ,  H01J37/32036 ,  H01J37/32559 ,  H01J37/32623 ,  H01J2237/0206 ,  H05H1/2406 ,  H05H2001/2412

Abstract: A method and apparatus for stabilizing glow plasma discharges by suppressing the transition from glow-to-arc includes a perforated dielectric plate having an upper surface and a lower surface and a plurality of holes extending therethrough. The perforated dielectric plate is positioned over the cathode. Each of the holes acts as a separate active current limiting micro-channel that prevents the overall current density from increasing above the threshold for the glow-to-arc transition. This allows for a stable glow discharge to be maintained for a wide range of operating pressures (up to atmospheric pressures) and in a wide range of electric fields include DC and RF fields of varying strength.

Abstract translation: 通过抑制从辉光到电弧的转变来稳定辉光等离子体放电的方法和装置包括具有上表面和下表面的穿孔电介质板和延伸穿过其中的多个孔。 穿孔电介质板位于阴极上方。 每个孔用作单独的有源电流限制微通道，其防止总电流密度增加到辉光到电弧转变的阈值以上。 这允许在宽范围的工作压力（高达大气压力）下保持稳定的辉光放电，并且在宽范围的电场中包括具有不同强度的DC和RF场。

公开(公告)号：US06879103B1

公开(公告)日：2005-04-12

申请号：US09381328

申请日：1998-03-17

Applicant: Erich E. Kunhardt ,  Kurt H. Becker

Inventor： Erich E. Kunhardt ,  Kurt H. Becker

IPC: H01J37/32 ,  H05H1/24 ,  H05H1/46 ,  H01J17/49

CPC classification number: H01J37/32018 ,  H01J37/32036 ,  H01J37/32559 ,  H01J2237/0206 ,  H05H2001/4697 ,  H05H2245/1225

Abstract: A glow plasma discharge device having an electrode (20, 40) covered with perforated dielectric (30) is disclose.

Abstract translation: 公开了一种具有覆盖有多孔电介质（30）的电极（20,40）的辉光等离子体放电装置。

公开(公告)号：US20040149385A1

公开(公告)日：2004-08-05

申请号：US10663646

申请日：2003-09-17

Inventor： Yutaka Ohmoto ,  Hironobu Kawahara ,  Ken Yoshioka ,  Kazue Takahashi ,  Saburou Kanai

IPC: H01L021/306

CPC classification number: H01J37/32192 ,  H01J37/321 ,  H01J37/32559 ,  H01J37/32623 ,  H01J37/32706

Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.

Abstract translation: 一种用于制造半导体器件的等离子体处理设备包括：用于向待处理衬底施加偏压功率的设备和与衬底相邻的材料;用于调节施加到该材料上的偏置功率的馈电阻抗的设备;以及用于 将所述偏置功率的馈送阻抗调整到所述衬底上的多个位置，以使得在所述衬底的表面内使等离子体投射到所述衬底的电子均匀。