公开(公告)号：US20120230861A1

公开(公告)日：2012-09-13

申请号：US13242075

申请日：2011-09-23

申请人： Hee Sam Kang

发明人： Hee Sam Kang

IPC分类号： C22C21/10 ,  C25D3/38 ,  B22D11/00 ,  C25D3/58 ,  B22D23/00 ,  B22D25/00

CPC分类号： C22C21/10 ,  B22D25/02 ,  C22F1/053 ,  C23C18/50 ,  C25D7/10

摘要： A swash plate includes aluminum (Al) as a main component and 35˜45 wt % of zinc (Zn), 1.5˜3.5 wt % of copper (Cu), 6˜10 wt % of silicon (Si), 0.2˜0.5 wt % of magnesium (Mg) and other inevitable impurities. A method of manufacturing the swash plate is also provided.

摘要翻译： 旋转斜盘包括铝（Al）作为主要成分，35〜45重量％的锌（Zn），1.5〜3.5重量％的铜（Cu），6〜10重量％的硅（Si），0.2〜0.5重量％ ％的镁（Mg）等不可避免的杂质。 还提供了制造斜盘的方法。

公开(公告)号：US08211285B2

公开(公告)日：2012-07-03

申请号：US12526727

申请日：2008-01-24

申请人： Klaus Bronder ,  Bernd Weyhmueller ,  Frank Oberst ,  Sascha Berger ,  Michael Lauster

发明人： Klaus Bronder ,  Bernd Weyhmueller ,  Frank Oberst ,  Sascha Berger ,  Michael Lauster

IPC分类号： C25D3/58

CPC分类号： C25D3/58

摘要： Consumer goods and industrial articles are electro-plated with bronze layers for decorative reasons and to protect them against corrosion. The electrolytes used hitherto for producing decorative bronze layers are either cyanide-containing or, as in the case of baths based on organosulphonic acids, highly corrosive or have, as in the case of cyanide-free baths based on diphosphoric acid, unsatisfactory long-term stabilities. Electrolytes which are used for applying solderable bronze layers in the electronics industry usually contain toxic or very toxic thio compounds. The present invention provides a non-toxic electrolyte which displays long-term stability for the electrolytic deposition of decorative bronze layers and a corresponding process for the application of such decorative bronze layers to consumer goods and industrial articles.

摘要翻译： 出于装饰原因，消费品和工业制品镀有青铜层，并保护它们免受腐蚀。 迄今为止用于生产装饰性青铜层的电解质是含氰化物，或者如在基于有机磺酸的浴的情况下，具有高度腐蚀性或具有基于二磷酸的无氰化浴的情况，长期不令人满意的 稳定性 用于在电子工业中应用可焊接青铜层的电解质通常含有有毒或非常有毒的硫化合物。 本发明提供了一种无毒的电解质，其对于装饰性青铜层的电解沉积具有长期的稳定性，以及将这种装饰性青铜层应用于消费品和工业制品的相应方法。

公开(公告)号：US08142637B2

公开(公告)日：2012-03-27

申请号：US13197173

申请日：2011-08-03

申请人： Andre Egli ,  Wing Kwong Wong ,  Raymund W. M. Kwok ,  Jochen Heber

发明人： Andre Egli ,  Wing Kwong Wong ,  Raymund W. M. Kwok ,  Jochen Heber

IPC分类号： C25D5/18 ,  C25D3/58 ,  C25D3/62

CPC分类号： C25D3/58 ,  C25D3/62 ,  C25D5/18 ,  Y10T428/31678

摘要： Compositions and methods for depositing gold alloys are disclosed. The compositions include certain dithiocarboxylic acids, salts and esters thereof and mercapto group containing compounds which provide bright gold alloy deposits with uniform color.

摘要翻译： 公开了用于沉积金合金的组合物和方法。 组合物包括某些二硫代羧酸，其盐和酯和含巯基的化合物，其提供具有均匀颜色的亮金合金沉积物。

公开(公告)号：US20100294669A1

公开(公告)日：2010-11-25

申请号：US12747681

申请日：2008-12-10

申请人： Joseph A. Abys ,  Edward J. Kudrak, JR. ,  Jingye Li ,  Chen Xu ,  Chonglun Fan

发明人： Joseph A. Abys ,  Edward J. Kudrak, JR. ,  Jingye Li ,  Chen Xu ,  Chonglun Fan

IPC分类号： C25D3/58 ,  C25D9/02 ,  C25D3/62 ,  C25D3/56 ,  C25D3/46 ,  C25D3/50 ,  C25D3/48 ,  C25D3/12 ,  C25D3/38 ,  C25D3/22

CPC分类号： C25D15/02 ,  C25D3/02 ,  C25D15/00

摘要： A method is provided for imparting corrosion resistance onto a surface of a substrate. The method comprises contacting the surface of the substrate with an electrolytic plating solution comprising (a) a source of deposition metal ions of a deposition metal selected from the group consisting of zinc, palladium, silver, nickel, copper, gold, platinum, rhodium, ruthenium, chrome, and alloys thereof, (b) a pre-mixed dispersion of non-metallic nano-particles, wherein the non-metallic particles have a pre-mix coating of surfactant molecules thereon; and applying an external source of electrons to the electrolytic plating solution to thereby electrolytically deposit a metal-based composite coating comprising the deposition metal and non-metallic nano-particles onto the surface.

摘要翻译： 提供了一种赋予衬底表面的耐腐蚀性的方法。 该方法包括使基板的表面与电解电镀溶液接触，所述电解电镀溶液包括（a）选自锌，钯，银，镍，铜，金，铂，铑等的沉积金属的沉积金属离子源， 钌，铬及其合金，（b）非金属纳米颗粒的预混合分散体，其中所述非金属颗粒在其上具有表面活性剂分子的预混合涂层; 以及将外部电子源施加到所述电解电镀溶液中，从而将包含所述沉积金属和非金属纳米颗粒的金属基复合涂层电沉积到所述表面上。

公开(公告)号：US07465384B2

公开(公告)日：2008-12-16

申请号：US11364665

申请日：2006-02-28

申请人： Peter R. Levey ,  Neil D. Brown

发明人： Peter R. Levey ,  Neil D. Brown

IPC分类号： C25D7/06 ,  C25D5/48 ,  C25D5/50 ,  C25D3/58 ,  C25D3/60 ,  C25D3/32

CPC分类号： C25D5/505 ,  C25D3/30 ,  C25D3/32 ,  C25D3/60 ,  C25D5/48

摘要： An acid electrolyte and method of using the electrolyte to both deposit tin and tin-alloys on iron containing substrates and at the same time perform as a flux to inhibit the formation of haze and stains on the tin and tin-alloys. The electrolytes and methods are suitable for plating on steel.

摘要翻译： 一种酸性电解质和使用电解质以在含铁基材上沉积锡和锡合金的方法，同时作为助焊剂进行抑制锡和锡合金上的雾度和污渍的形成。 电解质和方法适用于镀钢。

公开(公告)号：US20080257745A1

公开(公告)日：2008-10-23

申请号：US12132812

申请日：2008-06-04

申请人： Kazuya URATA ,  Kazuhito KITAGAWA ,  Yukio OGAWA ,  Kenji KASEGAWA

发明人： Kazuya URATA ,  Kazuhito KITAGAWA ,  Yukio OGAWA ,  Kenji KASEGAWA

IPC分类号： C25D3/58

CPC分类号： A44B17/00 ,  A44B17/0088 ,  A44C27/003 ,  C23C18/1646 ,  C23C18/1651 ,  C23C18/48 ,  C25D3/58 ,  C25D3/60 ,  C25D5/10 ,  C25D7/02 ,  C25D9/08 ,  Y10S428/935 ,  Y10T24/10 ,  Y10T428/12535 ,  Y10T428/1266 ,  Y10T428/12708 ,  Y10T428/12903

摘要： The present invention relates to a Cu—Sn—O alloy plating having an oxygen content of 0.3 to 50 at %, a copper content of 20 to 80 at %, and a tin content of 10 to 70 at % in the plating. The present invention provides a copper tin alloy plating that has excellent plating adhesion and disengaging force stability and particularly a Cu—Sn—O alloy plating that has a blackish color tone without containing any controlled substances.

摘要翻译： 本发明涉及氧含量为0.3〜50原子％，铜含量为20〜80原子％，锡含量为10〜70原子％的Cu-Sn-O合金镀层。 本发明提供具有优异的电镀附着力和分离力稳定性的铜锡合金电镀，特别是具有不含任何受控物质的黑色调的Cu-Sn-O合金电镀。

公开(公告)号：US07273540B2

公开(公告)日：2007-09-25

申请号：US11039841

申请日：2005-01-24

申请人： Hiromi Sonoda ,  Katsuji Nakamura

发明人： Hiromi Sonoda ,  Katsuji Nakamura

IPC分类号： C25D3/58 ,  C25D3/60

CPC分类号： C25D21/18 ,  B23K35/262 ,  C25D3/60 ,  C25D5/003 ,  C25D5/18 ,  C25D17/002 ,  C25D17/10 ,  C25D17/16 ,  C25D21/06 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3463 ,  H05K3/3473 ,  H01L2924/00

摘要： An electrolytic plating method, including: preparing a plating solution including water which is a primary medium, a sulfonic acid, and tin, copper, and silver ions, and a complexing agent, concentrations of the sulfonic acid, and tin, copper, and silver ions being 0.5 to 5 mol/L, 0.21 to 2 mol/L, 0.002 to 0.02 mol/L, and 0.01 to 0.1 mol/L, respectively, a mole ratio of the silver-ion concentration to the copper-ion concentration being in a range of 4.5 to 5.58; and separating a solution around a soluble anode containing 90 percent or more of tin from the plating solution on a cathode side by a non-ionic micro-porous membrane having a pore diameter of 0.01 to 0.05 μm and a thickness of 5 to 100 μm.

摘要翻译： 一种电解电镀方法，包括：制备包含主要介质，磺酸和锡，铜和银离子的水的电镀溶液和络合剂，磺酸和锡，铜和银的浓度 离子分别为0.5〜5mol / L，0.21〜2mol / L，0.002〜0.02mol / L，0.01〜0.1mol / L，银离子浓度与铜离子浓度的摩尔比为 范围为4.5至5.58; 并且通过孔径为0.01〜0.05μm，厚度为5〜100μm的非离子型微孔膜，在阴极侧从电镀液中含有90％以上的锡的可溶性阳极分离。

公开(公告)号：US20070151862A1

公开(公告)日：2007-07-05

申请号：US11611717

申请日：2006-12-15

申请人： Kevin Dobson ,  M. Calixto ,  Brian McCandless ,  Robert Birkmire

发明人： Kevin Dobson ,  M. Calixto ,  Brian McCandless ,  Robert Birkmire

IPC分类号： C25D5/48 ,  C25D3/58 ,  H01L31/00

CPC分类号： C25D3/58 ,  C25D5/48 ,  H01L31/0322 ,  Y02E10/541

摘要： Single bath electrodeposition of polycrystalline Cu(In,Ga)Se2 thin films for photovoltaic applications is disclosed. Specifically, Cu(In,Ga)Se2 was deposited onto Mo electrodes from low concentration buffered (pH 2.5) aqueous baths containing CuCl2, InCl3, GaCl3 and H2SeO3. Moreover, buffered aqueous baths are disclosed wherein Se4+/Cu2+ concentration ratios were controlled to optimize Se and Cu levels, while In3+ concentration was adjusted to control deposited In and Ga. Further disclosed are pre- and post-deposition processing methods resulting in smooth, compact, crack-free films of near stoichiometric values. Post deposition heat treatments on electrodeposited CuInSe2-based films in selenium and sulfur containing atmosphere are described. CuInSe2-based films from a single bath deposited onto Mo electrodes from low concentration aqueous baths. Heat treatment of electrodeposited Cu(In,Ga)Se2 in H2Se producing an O-free crystalline film and annealing in Se-vapor producing crystalline CuInSe2 without loss of Ga or O).

摘要翻译： 公开了用于光伏应用的单晶浴电沉积多晶Cu（In，Ga）Se <2> 薄膜。 具体地说，从含有CuCl 2，InCl 3的低浓度缓冲（pH2.5）水浴中将Cu（In，Ga）Se 2 N沉积到Mo电极上， 3，GaCl 3和H 2 SeO 3 3。 此外，公开了缓冲水浴，其中控制Se 4+ / Cu 2 +浓度比以优化Se和Cu水平，而在3+ >浓度以控制沉积的In和Ga。进一步公开了沉积前和沉积后处理方法，得到具有接近化学计量值的光滑，紧凑，无裂纹的膜。 描述了在含硒和含硫气氛中的电沉积CuInSe 2 N基膜上的后沉积热处理。 从低浓度水浴中沉积到Mo电极上的单个浴中的CuInSe 2 N基膜。 在H 2 2 Se中电沉积的Cu（In，Ga）Se 2 <3>的热处理产生无O结晶膜，并在Se蒸气产生的结晶CuInSe 2中进行退火 而不损失Ga或O）。

公开(公告)号：US20060137991A1

公开(公告)日：2006-06-29

申请号：US10531142

申请日：2003-10-10

申请人： Katrin Zschintzsch ,  Joachim Heyer ,  Marlies Kleinfeld ,  Stefan Schafer ,  Ortrud Steinius

发明人： Katrin Zschintzsch ,  Joachim Heyer ,  Marlies Kleinfeld ,  Stefan Schafer ,  Ortrud Steinius

IPC分类号： C25D3/58

CPC分类号： C25D3/58 ,  C25D3/60

摘要： A method for electrodeposition of bronzes, with which the substrate to be coated is plated in an acid electrolyte that contains at least tin and copper ions, an alkylsulfonic acid and a wetting agent, and the preparation of such an electrolyte.

摘要翻译： 用于电镀青铜的方法，将待涂覆的基底镀在至少含有锡和铜离子的酸性电解质中，烷基磺酸和润湿剂，以及制备这种电解质。

公开(公告)号：US20050252583A1

公开(公告)日：2005-11-17

申请号：US11127423

申请日：2005-05-11

申请人： Jinn Chu ,  Chon-Hsin Lin

发明人： Jinn Chu ,  Chon-Hsin Lin

IPC分类号： C25D3/58 ,  C25D5/50 ,  H01L21/3205

CPC分类号： C25D3/58 ,  C25D5/50

摘要： A copper film containing tungsten nitride is manufactured by co-sputtering method under an Ar/N2 atmosphere and has a composition in ratio of tungsten nitride contained in the copper layer in atomic ratios of more than 97.5% in copper, 0.5 to 1.5% in tungsten and of less than 2.0% in nitrogen. By adding the tungsten nitride, the copper film has improvements in thermal stability, good electrical conductivity and low electrical leakage current. Moreover, the copper film attached on a silicon substrate will generate a self-passivated silicon compound layer to serve as a diffusion barrier layer between the copper film and the silicon substrate during annealing.

摘要翻译： 通过在Ar / N 2气氛下通过共溅射法制造含有氮化钨的铜膜，并且在铜层中包含的氮化钨的比例以原子比大于97.5％的组成 铜，0.5〜1.5％的钨和小于2.0％的氮。 通过添加氮化钨，铜膜具有改善的热稳定性，良好的导电性和低漏电流。 此外，附着在硅衬底上的铜膜将在退火期间产生自钝化硅化合物层以用作铜膜和硅衬底之间的扩散阻挡层。