Abstract:
Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.
Abstract:
The present invention relates to a display device preventing a getter layer from contacting elements disposed in the display device, and an embodiment of the present invention may be achieved in a whole or in part by a display device comprising: A substrate; A pixel part disposed on the substrate; A cap comprising a first region attached on the substrate; and a second region having a position different from a position of the first region, connected with the first region, and corresponding to the pixel part; A getter layer disposed on the second region of the cap; and A protecting layer disposed on the getter layer.
Abstract:
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes vertical pillars formed by etching a semiconductor substrate and junction regions which are located among the neighboring vertical pillars and spaced apart from one another in a zigzag pattern. As a result, the semiconductor device easily guarantees an electrical passage between the semiconductor substrate and the vertical pillars, such that it substantially prevents the floating phenomenon from being generated, resulting in the prevention of deterioration of the semiconductor device.
Abstract:
An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.
Abstract:
A backlight assembly includes a first light-emitting module, a light guide plate, a receiving container and a main adhesion member. The first light-emitting module includes a first circuit board including a first mounting surface, and a first light source on the first mounting surface. The light guide plate is on the first mounting surface and guides light from the first light source. The receiving container includes a bottom portion and receives the first light-emitting module and the light guide plate. The main adhesion member is between the first mounting surface and the light guide plate and is attached to the first circuit board and the light guide plate, and is between the light guide plate and the bottom portion and movable with respect to the light guide plate.
Abstract:
A drum washing machine is provided. The drum washing machine includes a tub that stores wash water therein, a drum rotatably mounted within the tub, a motor mounted in a rear of the tub, the motor having a shaft to rotate the drum, a bearing housing inserted into the tub having a hollow portion, which allows the shaft of the motor to pass therethrough, formed in a center thereof, a bearing secured to the hollow of the bearing housing, and an outlet hole that discharges gas or moisture generated in the bearing and a portion adjacent to the bearing outside of the bearing housing. The drum washing machine so constructed has enhanced durability, because it includes the outlet hole provided in the bearing housing where the shaft rotates that prevents moisture or water from remaining in the bearing housing.
Abstract:
A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.
Abstract:
A delay locked loop is provided. The delay locked loop controls the number of delay cells that delay the phase of an input clock during a locking operation and controls a phase delay value of at least one delay cell among a plurality of delay cells after the locking operation is completed.
Abstract:
An ultra-high-strength steel wire rod having excellent resistance to delayed fracture includes, by wt %, 0.7-1.2% C, 0.25-0.5% Si, 0.5-0.8% Mn, 0.02-0.1% V and a balance of Fe and inevitable impurities. The method includes the steps of heating the above steel composition to 1100° C. or lower and hot rolling at a temperature of 900-1000° C., followed by cooling to 600-650° C. at a prescribed rate, followed by cold drawing at a reduction ratio of 60-80%.
Abstract:
A method for fabricating a semiconductor device includes forming at least two gate patterns on a substrate, forming sidewalls surrounding the gate patterns, wherein the sidewalls extend above an upper surface of the gate patterns, and forming a first conducting material in a first space and a second space, wherein the first space is provided above the gate patterns and between the sidewalls that extend above the upper surface of the gate patterns and the second space is provided between the gate patterns.