公开(公告)号：US20090073646A1

公开(公告)日：2009-03-19

申请号：US12277034

申请日：2008-11-24

Applicant: Jin Woo Lee

Inventor： Jin Woo Lee

IPC: H05K5/00

CPC classification number: F16M13/02 ,  F16M11/046 ,  F16M11/12 ,  F16M11/2064 ,  F16M11/24 ,  F16M2200/08 ,  Y10S248/923

Abstract: An image display device includes a body for displaying an image, a position adjusting device at a rear of the body for adjusting a height, a left/right angle, and a forward/backward slope of the body, a base, a support having an upper end rotatably coupled to the position adjusting device and a lower end rotatably coupled to the base, and a seating recess in an upper surface of the base for folding and placing the support therein, thereby permitting adjustment of the height, the left/right angle, and the forward/backward slope of the body.

Abstract translation: 图像显示装置包括用于显示图像的主体，位于主体后部的用于调节高度的位置调整装置，身体的左/右角和前后倾斜，基部，具有 可旋转地联接到位置调节装置的上端和可旋转地联接到基座的下端，以及在基座的上表面中的用于折叠和放置支撑件的座部凹部，从而允许调整高度，左/右角 ，以及身体的前后倾斜。

公开(公告)号：US07492004B2

公开(公告)日：2009-02-17

申请号：US11054104

申请日：2005-02-08

Applicant: Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

Inventor： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

IPC: H01L29/94

CPC classification number: H01L29/66659 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66621 ,  H01L29/7834 ,  H01L29/7835

Abstract: According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.

Abstract translation: 根据本发明的一些实施例，晶体管在沟道部分孔之间具有沟道区。 形成它们的方法包括设置在半导体衬底中的至少两个通道部分孔。 线图案平行地形成为在半导体衬底的主表面上彼此间隔开以填充沟道部分孔。 沟道区域设置在半导体衬底中的线图案下方。 此时，通道区域形成在通道部分孔之间并且还覆盖通道部分孔的下部。 利用本发明晶体管驱动DRAM的驱动电流能力和刷新特性得到改善。

公开(公告)号：US20080169493A1

公开(公告)日：2008-07-17

申请号：US11809252

申请日：2007-05-31

Applicant: Jin-Woo Lee ,  Tae-Young Chung

Inventor： Jin-Woo Lee ,  Tae-Young Chung

IPC: H01L27/108 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/2652 ,  H01L21/2658 ,  H01L27/10876 ,  H01L29/1041 ,  H01L29/42376 ,  H01L29/66621

Abstract: Semiconductor devices include an active region defined in a semiconductor substrate having first type impurity ions. A retrograde region is in the active region and has second type impurity ions. An upper channel region is on the retrograde region in the active region and has the first type impurity ions. Source and drain regions are on the upper channel region in the active region and spaced apart from each other. A gate electrode fills a gate trench formed in the active region. The gate electrode is disposed between the source and drain regions and extends into the retrograde region through the upper channel region. DRAM devices and methods are also provided.

Abstract translation: 半导体器件包括限定在具有第一类型杂质离子的半导体衬底中的有源区。 逆行区位于有源区并具有第二类杂质离子。 上通道区域在有源区域的逆行区域上，并具有第一类杂质离子。 源极和漏极区域在有源区域中的上部沟道区域上并且彼此间隔开。 栅电极填充形成在有源区中的栅极沟槽。 栅电极设置在源区和漏区之间，并通过上沟道区延伸到逆行区。 还提供DRAM装置和方法。

公开(公告)号：US20080073938A1

公开(公告)日：2008-03-27

申请号：US11820665

申请日：2007-06-20

Applicant: Jin Woo Lee

Inventor： Jin Woo Lee

IPC: B62D33/06

CPC classification number: E02F9/121 ,  E02F9/163

Abstract: An upper frame structure for supporting a cab of construction machinery is disclosed, which can support the cap mounted on the upper frame when a vertical load, which is so much that the cab structure is plastically deformed, is applied to the upper frame. The upper frame structure includes a center frame having a bottom plate on which a swing ring gear is mounted and a pair of side plates vertically fixed to the bottom plate and on which operation devices are mounted; a left frame mounted on a left side of the center frame and having a left side frame on which the cab is mounted; reinforcement members each of which has one end fixed by welding to a side surface of the side plate of the center frame and the other end fixed by welding to a side surface of the left side frame, and on which the cap is mounted; and a fastening member installed on the bottom plate to offset a load vertically applied to the cab and a load laterally applied to the cab, and fixing the reinforcement member to the bottom plate.

公开(公告)号：US20070232759A1

公开(公告)日：2007-10-04

申请号：US11538864

申请日：2006-10-05

Applicant: Moon-seok CHUN ,  Jin-woo LEE ,  Choon-hwa LEE ,  Ik-jun CHOI

Inventor： Moon-seok CHUN ,  Jin-woo LEE ,  Choon-hwa LEE ,  Ik-jun CHOI

IPC: C08F259/02 ,  C08F4/00

CPC classification number: C08F297/02 ,  C08F259/02 ,  C08F297/04 ,  C08L51/06 ,  C08L2666/02

Abstract: The present invention relates to a graft copolymer and a method for preparing the same, and more precisely a graft copolymer prepared by the steps of preparing a living activator with a single monomer and a block copolymer of a vinyl aromatic hydrocarbon or a conjugated diene hydrocarbon; and then grafting the prepared living activator to polyolefin polymer, and a method for preparing the same. According to the method of the present invention, the individual vinyl aromatic hydrocarbon or conjugated diene hydrocarbon polymers, and a block copolymer thereof, can be grafted onto chlorinated polyolefin polymer as a branch by using a living activator, and the resultant graft copolymer can be widely applied to various high molecular additives, compatabilizers, waterproof sheets and asphalt, etc.

Abstract translation: 本发明涉及一种接枝共聚物及其制备方法，更准确地说，涉及通过以下步骤制备的接枝共聚物：用单体单体和乙烯基芳族烃或共轭二烯烃的嵌段共聚物制备活性活化剂; 然后将制备的活性活化剂接枝到聚烯烃聚合物上，及其制备方法。 根据本发明的方法，单独的乙烯基芳族烃或共轭二烯烃聚合物及其嵌段共聚物可以通过使用活性活化剂作为分支接枝到氯化聚烯烃聚合物上，并且所得的接枝共聚物可以是广泛的 适用于各种高分子添加剂，配比剂，防水片材和沥青等。

公开(公告)号：US20070018555A1

公开(公告)日：2007-01-25

申请号：US11478227

申请日：2006-06-29

Applicant: Jin Woo Lee

Inventor： Jin Woo Lee

IPC: H01J29/80

CPC classification number: B62D33/077 ,  Y10T29/49826 ,  Y10T29/49893

Abstract: A reinforced upper frame for supporting a cabin of heavy construction equipment using a welding deformation preventing structure and a method of manufacturing the same are disclosed, in which even if a side frame is welded to a machined center frame, there is no thermal deformation around the machined portion. The reinforced upper frame includes a center frame having a lower plate machined to accommodate a swing ring gear, a lateral plate machined to accommodate an operation device, and a welding deformation preventing structure fixed to one side of the lower plate and lateral plate prior to welding, in which a part of the cabin is mounted on the welding deformation preventing structure, and left and right frames each having a side channel disposed in a longitudinal direction of the center frame and a side frame welded to the structure for connecting the side channel and the center frame.

Abstract translation: 公开了一种用于支撑使用焊接变形防止结构的重型施工设备的舱室的加强上框架及其制造方法，其中即使侧框架焊接到机加工的中心框架上，也不存在围绕 加工部分。 加强上框架包括具有加工成可摆动齿圈的下板的中心框架，用于容纳操作装置的侧板和在焊接之前固定到下板和侧板的一侧的焊接变形防止结构 其中，所述机舱的一部分安装在所述焊接变形防止结构上，以及左右框架，其具有沿着所述中心框架的纵向方向设置的侧通道，以及焊接到所述结构的侧框架，用于连接所述侧通道和 中心框架。

公开(公告)号：US20060283012A1

公开(公告)日：2006-12-21

申请号：US11250334

申请日：2005-10-13

Applicant: Jin-woo Lee

Inventor： Jin-woo Lee

IPC: H05K3/10 ,  B23K20/08

CPC classification number: B23K3/0623 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K3/3478 ,  H05K2201/10734 ,  H05K2203/041 ,  H05K2203/082 ,  H05K2203/163 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A solder ball-inspecting apparatus for a semiconductor component includes: a solder ball reservoir receiving a plurality of solder balls; a solder ball-transmitting tool provided with a plurality of ball-receiving apertures to which the solder balls received in the solder ball-reservoir are adhered and from which the adhered solder balls are separated to allow the solder balls to be seated on the semiconductor component; at least one electric pattern linearly interconnecting the ball-receiving apertures and having first and second ends that are to be electrically interconnected when the solder balls are correctly received in the respective solder ball-receiving apertures; an electric connection-detecting unit detecting electric connection of the electric pattern; and a determining-processing unit determining if the solder balls are corrected adhered to the ball-receiving apertures according to a detecting result of the electric connection-detecting unit.

Abstract translation: 一种用于半导体部件的焊球检查装置，包括：容纳多个焊球的焊球容器; 焊球传递工具设置有多个球接收孔，焊球容纳在焊球储存器中，焊球从中分离出来，允许焊球坐在半导体部件上 ; 所述至少一个电图形线性地互连所述球接收孔，并且当所述焊球正确地容纳在相应的焊球接收孔中时，具有将被互连的第一和第二端; 电连接检测单元，检测电图案的电连接; 以及确定处理单元，根据电连接检测单元的检测结果确定焊球是否被校正为粘附到球接收孔。

公开(公告)号：US20050127293A1

公开(公告)日：2005-06-16

申请号：US10959174

申请日：2004-10-07

Applicant: Young-Wan Kim ,  Sang-Kil Lee ,  Byung-Am Lee ,  Jin-Woo Lee ,  Hyo-Sang Cho

Inventor： Young-Wan Kim ,  Sang-Kil Lee ,  Byung-Am Lee ,  Jin-Woo Lee ,  Hyo-Sang Cho

IPC: H01L21/66 ,  G01N23/00 ,  G03B27/34 ,  G03F7/207 ,  H01J37/21 ,  H01J37/28 ,  H01L21/027

CPC classification number: H01J37/21 ,  H01J2237/216

Abstract: An auto focusing method and apparatus for quantifying a focusing average value, comparing the focusing average value with an acceptance level of a preset focusing evaluation value, and iteratively focusing, while widening the depth of focus, when the focusing average value is lower than the acceptance level.

Abstract translation: 一种自动对焦方法和装置，用于量化聚焦平均值，将聚焦平均值与预设聚焦评估值的接受水平进行比较，并且在聚焦平均值低于接受度的同时，在加深焦深的同时进行迭代聚焦 水平。

公开(公告)号：US06640112B1

公开(公告)日：2003-10-28

申请号：US09696320

申请日：2000-10-25

Applicant: Jin-Woo Lee ,  Byung-Kook Choi ,  Jong-Ok Kim ,  Jung-Hwan Byun ,  Chang-Yun Kim

Inventor： Jin-Woo Lee ,  Byung-Kook Choi ,  Jong-Ok Kim ,  Jung-Hwan Byun ,  Chang-Yun Kim

IPC: H04B138

CPC classification number: H04B7/0671 ,  H04B7/15

Abstract: A repeating method for a wireless communication system which provides time and space diversities, and an apparatus thereof are disclosed. The method of repeating a forward link communication signal for a wireless communication system includes the steps of: a) transmitting the forward link communication signal through a first transmitting antenna; b) delaying the forward link communication signal for a predetermined time period; and c) transmitting a delayed forward link communication signal which is generated by step b) through a second transmitting antenna. According to the method, when repeating forward and reverse link communication signals, time and space diversities are respectively provided to the base station and the mobile stations.

Abstract translation: 公开了一种提供时间和空间多样性的无线通信系统的重复方法及其装置。 重复无线通信系统的前向链路通信信号的方法包括以下步骤：a）通过第一发射天线发送前向链路通信信号; b）将所述前向链路通信信号延迟预定时间段; 以及c）通过第二发送天线发送由步骤b）生成的延迟前向链路通信信号。 根据该方法，当重复前向和反向链路通信信号时，分别向基站和移动台提供时间和空间多样性。

公开(公告)号：US06235573B1

公开(公告)日：2001-05-22

申请号：US09167277

申请日：1998-10-06

Applicant: Jin-woo Lee ,  Yoo-sang Hwang ,  Mi-hyang Lee

Inventor： Jin-woo Lee ,  Yoo-sang Hwang ,  Mi-hyang Lee

IPC: H01L218242

CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

Abstract: Methods of forming FRAM devices include the steps of forming first and second field effect access transistors in a semiconductor substrate, forming first and second bit lines (BL) electrically coupled to a drain region of the first field effect access transistor and a drain region of the second field effect access transistor, respectively, and forming first and second ferroelectric capacitors (CF) between the first and second bit lines in order to improve integration density. These first and second ferroelectric capacitors share a first electrode extending between the first and second bit lines and have respective second electrodes electrically coupled to respective source regions of the first and second field effect access transistors. The preferred methods may also include the step of forming a field oxide isolation region adjacent a face of the substrate and extending between the first and second field effect access transistors. In addition, a step may be provided to form a first interlayer dielectric layer on the first and second field effect access transistors and on the field oxide isolation region. The step of forming the first and second ferroelectric capacitors may also comprise the preferred steps of forming a first conductive layer on the first interlayer dielectric layer, forming a ferroelectric dielectric layer (e.g., PZT, PLZT) on the first conductive layer, forming a second conductive layer on the ferroelectric dielectric layer, patterning the second conductive layer and the ferroelectric dielectric layer using a first mask to define the second electrodes of the first and second ferroelectric capacitors and then patterning the first conductive layer using a second mask to define the first electrode which is shared by the first and second ferroelectric capacitors.

Abstract translation: 形成FRAM器件的方法包括以下步骤：在半导体衬底中形成第一和第二场效应存取晶体管，形成电耦合到第一场效应存取晶体管的漏极区域的第一和第二位线（BL）和漏极区域 第二场效应存取晶体管，并且在第一和第二位线之间形成第一和第二铁电电容器（CF），以提高集成密度。 这些第一和第二铁电电容器共享在第一和第二位线之间延伸的第一电极，并且具有电耦合到第一和第二场效应存取晶体管的相应源极区域的相应的第二电极。 优选的方法还可以包括形成与衬底的表面相邻并在第一和第二场效应存取晶体管之间延伸的场氧化物隔离区的步骤。 此外，可以提供步骤以在第一和第二场效应存取晶体管和场氧化物隔离区上形成第一层间电介质层。 形成第一和第二铁电电容器的步骤还可以包括在第一层间介质层上形成第一导电层的优选步骤，在第一导电层上形成铁电电介质层（例如PZT，PLZT），形成第二导电层 导电层，使用第一掩模图案化第二导电层和铁电介质层，以限定第一和第二铁电电容器的第二电极，然后使用第二掩模对第一导电层进行构图以限定第一电极 其由第一和第二铁电电容器共享。