Abstract:
Disclosed is a NAND flash memory device comprising a memory cell array connected to a page buffer via a plurality of bitlines. The page buffer stores input data to be programmed in the memory cell array. The memory cell array is programmed by establishing bitline voltages for the plurality of bitlines according to the input data and then applying a wordline voltage to the memory cell array. The bitline voltages are established by first precharging the bitlines to a power supply voltage and then selectively discharging the bitlines according to the input data. The bitlines are discharged sequentially, i.e., some of the bitlines are discharged before others.
Abstract:
In a flash memory data storage apparatus, a multistage flash input buffer unit is embedded in which data bus width is gradually extended and the period of a control clock is gradually made longer. In one example, the flash memory data storage apparatus renders its embedded flash memory to be accessed with 128-bit data in parallel in a period of 80 ns, while communicating with an external system for 16-bit data in parallel during a period of 20 ns. The flash memory data storage apparatus improves a data rate between the flash memory and a buffer memory, resulting in remarkable advancement of the data rate between the flash memory and an external system.
Abstract:
Disclosed is a system for providing an electronic device with a DM service, including: a DM server for providing the electronic device with the DM service; and a wireless terminal capable of being directly connected to the DM server for establishing a DM session while cooperating with the electronic device, generating an MO used for managing the electronic device with reference to a DDF of the electronic device if the wireless terminal receives the DDF of the electronic device from the electronic device through the DM session, and transmitting the generated MO to the DM server.
Abstract:
In a semiconductor device including a gate line having a relatively narrow width and a relatively smaller pitch and a method of manufacturing the semiconductor device, the semiconductor device includes a substrate having a fin-type active region, a gate insulating layer that covers an upper surface and sides of the fin-type active region, and a gate line that extends and intersects the fin-type active region while covering the upper surface and the both sides of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.
Abstract:
A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.
Abstract:
A method and an apparatus for automatically connecting a wireless Local Area Network (LAN) between digital devices and executing an application program based on the wireless LAN, and more particularly, an apparatus and a method for generating device information indicating attributes in a digital device and obtaining attributes of a peripheral device by analyzing device information of the peripheral device. The apparatus includes a device information generation part configured to generate device information including information about attributes by analyzing the attributes of the digital device. The apparatus also includes a device recognition part configured, when receiving device information of a peripheral device, to obtain attribute information of a device corresponding to the received device information. The apparatus further includes a controller configured to control to transmit the device information generated by the device information generation part, to the peripheral device.
Abstract:
A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.
Abstract:
A method and apparatus for connecting a wireless network in a digital device are provided. The method of connecting the wireless network of the digital device includes receiving a signal from a peer digital device, comparing Receive Signal Strength (RSS) of the received signal with a specified threshold to determine whether the peer digital device is located nearby, if it is determined that the peer digital device is located nearby, establishing a Wireless Local Area Network (WLAN) connection to the peer digital device, and automatically executing an application program that uses the WLAN connection.
Abstract:
An operation method and system of a mobile terminal connected to an electronic device is provided. The electronic device extracts a content corresponding to a user selection from among contents displayed on a screen, and delivers to the mobile terminal the extracted content and functional application information and command of a mobile terminal that will execute the extracted content. The mobile terminal receives the extracted content and the functional application information and command, and executes the functional application according to the command using the extracted content.
Abstract:
A method for fabricating a light emitting device is provided. The method comprises forming a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer and forming a mixed-period photonic crystal structure on the light emitting structure. And the forming of the mixed-period photonic crystal structure includes defining a first photonic crystal structure through a lithography process and a dry etching process, and forming a second photonic crystal structure through a wet etching process.