Abstract:
A system for monitoring an optical output/wavelength is employed to be used for a WDM system having a narrow channel space by structuring an etalon and photodiode as an integrated structure. The system includes: a laser source control unit for controlling the laser source; an optical/wavelength monitoring unit for monitoring an optical output/wavelength of the controlled laser source; a TEC control unit for controlling a TEC in order to constantly maintain the laser source of the optical output/wavelength monitoring unit to have a predetermined temperature; a temperature control unit for controlling a heater and a thermistor to set an etalon to a predetermined temperature, wherein the heater is attached on the optical output/wavelength monitoring unit and the thermistor is attached on the heater; a comparison unit for comparing the optical output signal and the wavelength signal, each of which is monitored by the optical output/wavelength monitoring unit; and a processing unit for comparing values of the compared signals with a preset value to control an input current or a temperature of the laser source.
Abstract:
A transmitting apparatus in a TDD wireless communication system is provided. In the transmitting apparatus, a circulator transmits a signal received from a power amplifier to an antenna feed line and transmits a signal received from the antenna feed line to a quarter-wave transmission line. The quarter-wave transmission line is installed in a reception path, for reception isolation in a transmission mode. An RF switch shorts the load of the quarter-wave transmission line to the ground or connects the load of the quarter-wave transmission line to an LNA according to a control signal. The LNA low-noise-amplifies a signal received from the RF switch.
Abstract:
In a semiconductor device with a via contact including a barrier metal layer and a method for fabricating the same, a lower metal interconnection is formed over a substrate. An ILD is formed on the lower metal interconnection and has a lower barrier layer and an upper barrier layer that have an etch selectivity with respect to each other. An upper metal interconnection is formed over the ILD and is separated from the lower metal interconnection by the ILD. A via contact plug penetrates the ILD to connect the lower and upper metal interconnections. The via contact plug is formed such that a portion crossing the lower barrier layer is formed to have a greater width as compared to a portion crossing the upper barrier layer. The barrier metal layer, which is formed to encompass sidewalls and a bottom of an inner metal layer of the via contact plug, forms a discontinuous part which does not exist at the portion crossing the lower barrier layer. Thus, the inner metal layer of the contact plug is in direct contact with the lower metal interconnection. The upper and lower barrier layers are layers that serve as a barrier to copper, such as a silicon nitride layer or silicon carbide layer. However, the upper and lower barrier layers are composed of different material layers so as to have etch selectivity with respect to each other.
Abstract:
Disclosed herein is an inhomogeneity tunable erbium-doped optical fiber amplifier with a long wavelength band and method of blocking a backward amplified spontaneous light emission in the same. The optical fiber amplifier includes a control device situated between a first amplification stage and a second amplification stage for controlling an isolation rate of a backward amplified spontaneous light emission being propagated from a second amplification stage to the first amplification stage. The method blocks a backward amplified spontaneous light emission in a two-stage inhomogeneity tunable erbium-doped optical fiber amplifier with a long wavelength gain band, in which the backward amplified spontaneous light emission being propagated from a second amplification stage to a first amplification stage is blocked, and an isolation rate of the backward amplified spontaneous light emission is controlled according to the intensity of an optical signal inputted to the first amplification stage.
Abstract:
A method is presented for finding a shortest path from a starting place to a destination place in a traffic network including one or more turn restrictions, one or more U-turns and one or more P-turns using a Dijkstra algorithm. The method as sets a virtual arc between nodes, and assigns a virtual arc value. A smallest travel time value is selected out of total travel time values for all nodes except for the starting node, by considering existing arcs between nodes and the virtual arc and assigning the smallest travel time value to a permanent label node. The shortest path is determined by tracing the permanent nodes starting from the destination node.
Abstract:
A fine inductor having a 3-dimensional coil structure is disclosed. The inductor includes an insulating layer having a groove, a plurality of first conductive patterns wherein the respective first conductive patterns cover bottom and both walls of the groove formed in the insulating layer, both ends of the respective first conductive patterns are extended over upper surface of both sides of the groove, and each of the first conductive patterns is disposed at a predetermined space between adjacent first conductive patterns, and a plurality of second conductive patterns wherein one ends of the respective second conductive patterns are connected to the one ends of the first conductive patterns extended over upper surface and the other ends of the respective second conductive patterns are connected to the other ends of the adjacent first conductive patterns extended over upper surface, thereby forming a coil structure together with the first conductive patterns.
Abstract:
A layer-type ball grid array (BGA) semiconductor package, module and methods of manufacturing same is provided that expands the capability of the package in a limited area. The BGA semiconductor package and method of manufacturing same includes a substrate having a cavity formed therein and an interconnection pattern layer that has a plurality of conductive interconnections forming electric channels between or electrically coupling upper and lower surfaces of the substrate is attached to an external surface of the substrate. The interconnection pattern layer extends from the upper surface to the lower surface of the substrate. A semiconductor chip is provided in bottom of the cavity and a plurality of conductive wires electrically couple the semiconductor chip to one of the conductive interconnections. A molding part fills in the cavity for sealing the semiconductor chip and wires. A plurality of solder balls are correspondingly attached to the conductive interconnections of the interconnection pattern layer formed on the lower surface of the substrate.
Abstract:
Disclosed is a synchronous cross-connect system with an integrated 2.5 Gbps (STM-16) I/O link and a ring network interworking. The synchronous cross-connect system includes: first and second I/O portions for performing I/O function with respect to a plurality of STM-16 signals, including a backplane signal pattern which takes four units among the plurality of STM-16 signals performing a protection switching and transmission functions; a signal intercrossing portion for crossing/connecting signals of the first and second I/O portions; and synchronizing portion for generating clock signals necessary to the first and second I/O portions and the signal intercrossing portion. As a result, the synchronous cross-connect system performs a transmission function without an additional apparatus in the transmission link with interoffice transmission capacity of 2.5 Gbps (STM-16), and has a high survivability because of a real-time fault recovery function using the ring network interworking.
Abstract:
An amplifier and an amplifying method are provided. The amplifier includes: an amplifying unit amplifying and transferring a transmission target signal to a TDD switch; the TDD switch transferring a signal received from the amplifying unit to a filter unit when the amplifier operates in a TDD mode, and transferring a signal received from the filter unit to a duplex mode selection switch; the duplex mode selection switch transferring a signal received from the filter unit to a receiving side; and a controller controlling the duplex mode selection switch to transfer the signal received from the filter unit to the receiving side without passing through the TDD switch when the received duplex mode selection signal is a FDD mode selection signal.
Abstract:
A mobile terminal and an interface method thereof for connecting external devices, such as an adapter, a Universal Serial Bus (USB) cable, a docking station, an accessory, and the like, to the mobile terminal are provided. The mobile terminal includes a battery, a connector including a pin for data communication and first and second power pins for charging the battery, a memory for storing a reference voltage indicating a dedicated adapter of the battery, and a controller for receiving a voltage input from the first and second power pins, for recognizing an external device connected with the connector as the dedicated adapter when a voltage input from the pin for data communication is the reference voltage, and for charging the battery with power input to the first and second power pins.