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    SEMICONDUCTOR DEVICE AND BATTERY PACK
    101.
    发明申请
    SEMICONDUCTOR DEVICE AND BATTERY PACK 有权

    公开(公告)号：US20250015614A1

    公开(公告)日：2025-01-09

    申请号：US18894219

    申请日：2024-09-24

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kei TAKAHASHI ,  Yuki OKAMOTO ,  Minato ITO ,  Takahiko ISHIZU ,  Hiroki INOUE ,  Shunpei YAMAZAKI

    IPC: H02J7/00 ,  H01M10/42 ,  H01M10/44 ,  H03K3/0231 ,  H03K17/082

    Abstract: A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparison circuit has a function of comparing a voltage of the node ND1 and the voltage of the node ND2. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node ND2 is higher than the voltage of the node ND1.

    DISPLAY DEVICE AND ELECTRONIC DEVICE
    102.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250014534A1

    公开(公告)日：2025-01-09

    申请号：US18885890

    申请日：2024-09-16

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Atsushi UMEZAKI ,  Hajime KIMURA

    IPC: G09G3/36 ,  G02F1/133 ,  G02F1/1362 ,  G11C19/28 ,  H01L27/088 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

    Abstract: A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of on/off of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10−18 A/μm) or less. Therefore, the drive capability of the semiconductor device can be improved.

    SEMICONDUCTOR DEVICE
    103.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250014531A1

    公开(公告)日：2025-01-09

    申请号：US18892704

    申请日：2024-09-23

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hajime KIMURA ,  Atsushi UMEZAKI

    IPC: G09G3/36 ,  G09G3/20

    Abstract: A semiconductor device where delay or distortion of a signal output to a gate signal line in a selection period is reduced is provided. The semiconductor device includes a gate signal line, a first and second gate driver circuits which output a selection signal and a non-selection signal to the gate signal line, and pixels electrically connected to the gate signal line and supplied with the two signals. In a period during which the gate signal line is selected, both the first and second gate driver circuits output the selection signal to the gate signal line. In a period during which the gate signal line is not selected, one of the first and second gate driver circuits outputs the non-selection signal to the gate signal line, and the other gate driver circuit outputs neither the selection signal nor the non-selection signal to the gate signal line.

    OCCUPANT PROTECTION DEVICE
    105.
    发明申请
    OCCUPANT PROTECTION DEVICE 有权

    公开(公告)号：US20250010809A1

    公开(公告)日：2025-01-09

    申请号：US18894169

    申请日：2024-09-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA

    IPC: B60R21/0134 ,  B60R21/00 ,  B60R21/01 ,  B60R21/013 ,  G06V20/56

    Abstract: An occupant protection device which can protect an occupant without delay is provided. An image taken by an imaging device is analyzed to judge whether there is an object approaching the subject car. In the case where a collision between the object and the subject car is judged to be inevitable, an airbag device is activated before the collision, whereby the occupant can be protected without delay. By using selenium for a light-receiving element of the imaging device, an accurate image can be obtained even under low illuminance. Imaging in a global shutter system leads to an accurate image with little distortion. This enables more accurate image analysis.

    Memory device and semiconductor device
    106.
    发明授权
    Memory device and semiconductor device 有权

    公开(公告)号：US12193244B2

    公开(公告)日：2025-01-07

    申请号：US17891248

    申请日：2022-08-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yutaka Shionoiri ,  Hiroyuki Miyake ,  Kiyoshi Kato

    IPC: H01L29/786 ,  H01L27/12 ,  H01L27/13 ,  H10B41/70 ,  H10B69/00 ,  H10B99/00 ,  G11C16/04

    Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

    DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE DISPLAY APPARATUS
    109.
    发明申请
    DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE DISPLAY APPARATUS 有权

    公开(公告)号：US20250008818A1

    公开(公告)日：2025-01-02

    申请号：US18711284

    申请日：2022-11-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yukinori SHIMA ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Yasutaka NAKAZAWA ,  Naoto GOTO ,  Saki EGUCHI ,  Sachiko KATANIWA

    IPC: H10K59/80 ,  H10K39/00 ,  H10K59/12 ,  H10K59/95

    Abstract: A display apparatus with extremely high resolution is provided. A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a first insulating layer, a second insulating layer, and a third insulating layer. The first light-emitting element includes a first pixel electrode and a first organic layer. The second light-emitting element includes a second pixel electrode and a second organic layer. The first insulating layer includes a groove-like region provided along a side of the first pixel electrode in a plan view. The groove-like region includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The first region and the second region each have a width greater than or equal to 20 nm and less than or equal to 500 nm. The second insulating layer includes a region in contact with a top surface of the first organic layer, a region in contact with a side surface of the first organic layer, and a region located below the first pixel electrode. The third insulating layer includes a region in contact with a top surface of the second organic layer, a region in contact with a side surface of the second organic layer, and a region located below the second pixel electrode.

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