公开(公告)号：US07781294B2

公开(公告)日：2010-08-24

申请号：US11831362

申请日：2007-07-31

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L29/32

摘要： A method for producing an integrated circuit including a semiconductor is disclosed. In one embodiment, crystal defects are produced by irradiation in the material of the underlying semiconductor substrate which crystal defects form an inhomogeneous crystal defect density distribution in the vertical direction of the semiconductor component and lead to a corresponding inhomogeneous distribution of the carrier lifetime.

摘要翻译： 公开了一种用于制造包括半导体的集成电路的方法。 在一个实施例中，通过在下面的半导体衬底的材料中照射产生晶体缺陷，该晶体缺陷在半导体组件的垂直方向上形成不均匀的晶体缺陷密度分布，并导致载流子寿命的相应不均匀分布。

公开(公告)号：US07749876B2

公开(公告)日：2010-07-06

申请号：US12039173

申请日：2008-02-28

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L21/266

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/861

摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.

摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。

公开(公告)号：US07705369B2

公开(公告)日：2010-04-27

申请号：US10999111

申请日：2003-03-27

申请人： Veli Kartal ,  Hans-Joachim Schulze ,  Anton Mauder ,  Elmar Falck

发明人： Veli Kartal ,  Hans-Joachim Schulze ,  Anton Mauder ,  Elmar Falck

IPC分类号： H01L29/861

CPC分类号： H01L21/263 ,  H01L29/32 ,  H01L29/36 ,  H01L29/8611

摘要： The invention relates to a high-voltage diode having a specifically optimized switch-off behavior. A soft recovery behavior of the component can be obtained without increasing the forward losses by adjusting in a specific manner the service life of the charge carriers by irradiating only the n+-conducting cathode emitter (6) side or both sides, i.e. the n+-conducting cathode emitter (6) side and the p+-conducting anode emitter (4) side.

摘要翻译： 本发明涉及具有特别优化的关断行为的高压二极管。 通过仅仅照射n + - 导电阴极发射体（6）侧或两侧（即n +导体），以特定方式调节电荷载体的使用寿命，可以获得组分的软恢复行为，而不增加前向损耗 阴极发射极（6）侧和p +导体阳极发射极（4）侧。

公开(公告)号：US20100044838A1

公开(公告)日：2010-02-25

申请号：US12543995

申请日：2009-08-19

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme

IPC分类号： H01L23/544 ,  H01L21/302

CPC分类号： H01L21/78 ,  H01L29/0692 ,  H01L29/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region.

摘要翻译： 具有半导体主体的半导体部件包括活性区域和围绕有源区域的边缘区域。 边缘区域从有源区域延伸到半导体本体的边缘。 在边缘区域形成由多孔材料构成的区域。

公开(公告)号：US07667297B2

公开(公告)日：2010-02-23

申请号：US11423026

申请日：2006-06-08

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/167 ,  H01L29/30

CPC分类号： H01L29/0834 ,  H01L21/263 ,  H01L21/324 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/861

摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。

公开(公告)号：US20090218621A1

公开(公告)日：2009-09-03

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

摘要翻译： 具有漂移区域和漂移控制区域的半导体部件。 一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。 由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。 在漂移区域和漂移控制区域之间布置积累电介质。

公开(公告)号：US20070170514A1

公开(公告)日：2007-07-26

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/76

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

公开(公告)号：US20050280076A1

公开(公告)日：2005-12-22

申请号：US11083914

申请日：2005-03-18

申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC分类号： H01L29/08 ,  H01L29/32 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868 ,  H01L29/76 ,  H01L21/8238

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/861

摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.

摘要翻译： 一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面 具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。

公开(公告)号：US10164043B2

公开(公告)日：2018-12-25

申请号：US13347749

申请日：2012-01-11

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Philipp Seng

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Philipp Seng

IPC分类号： H01L29/66 ,  H01L29/861 ,  H01L29/02 ,  H01L29/06 ,  H01L29/12 ,  H01L29/36 ,  H01L29/45 ,  H01L21/44 ,  H01L29/40

摘要： A semiconductor diode is provided. The semiconductor diode includes a monocrystalline silicon semiconductor body including a first semiconductor region of a first conductivity type extending to a first surface of the semiconductor body and having a first maximum doping concentration, and a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region. The semiconductor diode further includes a polycrystalline silicon semiconductor region of the first conductivity type having a second maximum doping concentration which is higher than the first maximum doping concentration and adjoining the first semiconductor region on the first surface, a first metallization arranged on the polycrystalline silicon semiconductor region and in electric contact with the polycrystalline semiconductor region, and an edge-termination structure arranged next to the first semiconductor region. Further, a method for producing a semiconductor diode is provided.

公开(公告)号：US20140001547A1

公开(公告)日：2014-01-02

申请号：US13539959

申请日：2012-07-02

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Franz Hirler

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L27/088 ,  H01L21/22 ,  H01L29/772

CPC分类号： H01L29/086 ,  H01L21/265 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes a doped layer which contains a first dopant of a first conductivity type. In the doped layer, a counter-doped zone is formed in an edge area that surrounds an element area of the semiconductor device. The counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type, which is the opposite of the first conductivity type. A concentration of the second dopant is at least 20% and at most 100% of a concentration of the first dopant. The dopants in the counter-doped zone decrease charge carrier mobility and minority carrier lifetime such that the dynamic robustness of the semiconductor device is increased.

摘要翻译： 半导体器件包括含有第一导电类型的第一掺杂剂的掺杂层。 在掺杂层中，在围绕半导体器件的元件区域的边缘区域中形成反掺杂区域。 反掺杂区至少包含与第一导电类型相反的第二导电类型的第一掺杂剂和第二掺杂剂。 第二掺杂剂的浓度为第一掺杂剂的浓度的至少20％且至多100％。 反掺杂区中的掺杂剂降低了载流子迁移率和少数载流子寿命，从而提高了半导体器件的动态鲁棒性。